SJ DIODE Search Results

pj 72 diode

Abstract: Diode SJ 12 pj 86 diode Diode SJ
Contextual Info: SK75GD12T4T =' Q BR SJA -%2&'' ,.8& */'& '5& /E/&1 Absolute Maximum Ratings Symbol Conditions IGBT PJ:9 =T Q BR SJ <J =T Q @WR SJ <JY; SEMITOP 4 IGBT Module SK75GD12T4T .5'( @BVV P @VB K =' Q WV SJ X@ K BBR K Z BV P =T Q @RV SJ @V ^' =' Q BR SJ XC K =' Q WV SJ

pj 56 diode

Abstract: semikron 3Y diode PJ diode ph9a
Contextual Info: SK100GD12T4T =' Q BR SJA -%2&'' ,.8& */'& '5& /E/&1 Absolute Maximum Ratings Symbol Conditions IGBT PJ:9 =T Q BR SJ <J =T Q @WR SJ <JY; SEMITOP 4 IGBT Module SK100GD12T4T .5'( @BVV P @BX K =' Q WV SJ @VV K CVV K Z BV P =T Q @RV SJ @V _' =' Q BR SJ @VB K =' Q WV SJ

Diode SJ 56

Abstract: diode sj pj+939+diode
Contextual Info: SK50GD12T4T =' Q BR SJA -%2&'' ,.8& */'& '5& /E/&1 Absolute Maximum Ratings Symbol Conditions IGBT PJ:9 =T Q BR SJ <J =T Q @WR SJ <JY; SEMITOP 4 IGBT Module SK50GD12T4T .5'( @BVV P WR K =' Q WV SJ XV K @RV K Z BV P =T Q @RV SJ @V _' =' Q BR SJ XV K =' Q WV SJ

Contextual Info: MB91580M/S Series 32-bit Microcontroller FR Family FR81S MB91F583MG/MH/MJ/MK/SG/SH/SJ/SK, MB91F584MG/MH/MJ/MK/SG/SH/SJ/SK, MB91F585MG/MH/MJ/MK/SG/SH/SJ/SK Data Sheet Full Production Publication Number MB91585MG_DS705-00013 CONFIDENTIAL Revision 1.1 Issue Date January 31, 2014

SD101AWS

Abstract: SD101BWS SD101CWS marking code SJ
Contextual Info: SD101AWS.SD101CWS SCHOTTKY DIODES Plastic-Encapsulate Diodes PINNING PIN Features: Cathode 2 Anode ˙ Low Forward Voltage Drop. ˙ Guard Ring Construction for DESCRIPTION 1 2 1 SJ Transient Protection. ˙ Negligible Reverse Recovery Time. Top View Marking Code: SD101AWS: SJ

RJK60S5

Abstract: r2a20118 rjk60s7 RJK60S3DPP-M0 RJK60S7DPN-E0 RJK60S7DPP-E0 RJK60s3dpp RJK60s4dpp-M0
Contextual Info: High-voltage SJ-MOSFETs New SJ-MOSFETs with Very Low RDS on and Ultra-low Qgd A new line-up of high-voltage SJ-MOSFETs that combine very low RDS(on) and ultra-low Qgd enable switching power supply and motor drive designs that are optimized for both the highest efficiency and compact form

Contextual Info: SKKE 600F THYRISTOR BRIDGE,SCR,BRIDGE WXHY WXXY SJXYH Z =P@ % '40124C4 I0-C. 3 , )*+2*C)CB ):.,0+2)*5 W W SJ%W Z >O@ % 'B2*< ?[@¥ P@ AM¥ U( Z [P ]$5 ?Q@@ ?Q@@ Symbol Conditions SJ%W SJHY 2a+ SEMIPACK Fast Diode Modules SKKE 600F H^^N O@@J?Q Values Units

IPP50R280Ce

Abstract: IPD50R1K4CE IPD50R380CE IPD50R800CE
Contextual Info: Product Brief Features 500V CoolMOS CE Power MOSFET The CoolMOS™ CE is a new technology platform of Infineon’s market leading high voltage power MOSFETs designed according to the revolutionary superjunction SJ principle. 500V CE portfolio provides all benefits of a fast switching SJ MOSFET while not

2SK3674-01L

Abstract: FUJI ELECTRIC fuji electric mark MT5F12615
Contextual Info: Fuji Power MOSFET SuperFAP-G series Target Specification PRELIMINARY 2SK3674-01L,S,SJ 900V/2.0Ω/7A T-PACK 1) Package L ・・・See Page 2/4 S ・・・See Page 3/4 SJ ・・・See Page 4/4 2) Absolute Maximum Ratings (Tc=25℃ unless otherwise specified)

2SK3676-01L

Contextual Info: Fuji Power MOSFET SuperFAP-G series Target Specification PRELIMINARY 2SK3676-01L,S,SJ 900V/2.5Ω/6A 1) Package T-PACK L ・・・See Page 2/4 S ・・・See Page 3/4 SJ ・・・See Page 4/4 2) Absolute Maximum Ratings (Tc=25℃ unless otherwise specified)

ITS4100

Abstract: I100SN realview
Contextual Info: ITS4100S-SJ-N Smart High-Side NMOS-Power Switch Data Sheet Rev 1.0, 2012-09-01 Standard Power Smart High-Side NMOS-Power Switch 1 ITS4100S-SJ-N Overview Features • • • • • • • • • • • • • • CMOS compatible input Switching all types of resistive, inductive and capacitive loads

2SK3688-01L

Abstract: FUJI MOSFET
Contextual Info: PRELIM INARY Fuji Power MOSFET SuperFAP-G series Target Specification 2SK3688-01L,S,SJ 600V/0.54Ω/16A 1) Package T-PACK L・・・ See Page 2/4 S ・・・ See Page 3/4 SJ・・・ See Page 4/4 2) Absolute Maximum Ratings (Tc=25℃ unless otherwise specified)

ITS4060S-SJ-N

Abstract: ITS4060S
Contextual Info: ITS4060S-SJ-N Smart High-Side NMOS-Power Switch Data Sheet Rev 1.0, 2012-09-01 Standard Power Smart High-Side NMOS-Power Switch 1 ITS4060S-SJ-N Overview Features • • • • • • • • • • • • • • CMOS compatible input Switching all types of resistive, inductive and capacitive loads

ITS4300S-SJ-D

Abstract: I300SD LIMT SWITCH
Contextual Info: ITS4300S-SJ-D Smart High-Side NMOS-Power Switch Data Sheet Rev 1.0, 2012-09-01 Standard Power Smart High-Side NMOS-Power Switch 1 ITS4300S-SJ-D Overview Features • • • • • • • • • • • • • • • • CMOS compatible input Switching all types of resistive, inductive and capacitive loads

FUJI ELECTRIC

Abstract: 2SK3684-01L
Contextual Info: PRELIM INARY Fuji Power MOSFET SuperFAP-G series Target Specification 2SK3684-01L,S,SJ 500V/0.38Ω/19A 1) Package T-PACK L・・・ See Page 2/4 S ・・・ See Page 3/4 SJ・・・ See Page 4/4 2) Absolute Maximum Ratings (Tc=25℃ unless otherwise specified)

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-123 Plastic-Encapsulate Diodes SOD-123 B5817W-5819W SCHOTTKY BARRIER DIODE FEATURES For use in low voltage, high frequency inverters Free wheeling, and polarity protection applications. MARKING: B5817W: SJ

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-123 Plastic-Encapsulate Diodes SOD-123 B5817W-5819W SCHOTTKY BARRIER DIODE FEATURES For use in low voltage, high frequency inverters Free wheeling, and polarity protection applications. MARKING: B5817W: SJ

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-323 Plastic-Encapsulate Diodes B5817WS-5819WS SOD-323 SCHOTTKY BARRIER DIODE FEATURES For use in low voltage, high frequency inverters Free wheeling, and polarity protection applications MARKING: B5817WS: SJ

Contextual Info: CMOS/DMOS High Speed Analog Switch calore sJ C O RPO RATIO N ' CWB2214 FEATURES DESCRIPTION • High OFF Isolation. >40dB @ 100MHz . >25dB @ 200MHz • Fast Switching

Sj Schottky Rectifier

Contextual Info: SENSITRON 1N6660, 1N6660R SJ, SX, SV SEMICONDUCTOR TECHNICAL DATA DATASHEET 4300, Rev- HERMETIC POWER SCHOTTKY RECTIFIER Applications: • Switching Power Supply • Converters • Free-Wheeling Diodes • Polarity Protection Diode Features: • • • •

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-123 Plastic-Encapsulate Diodes SOD-123 B5817W-5819W SCHOTTKY BARRIER DIODE FEATURES For use in low voltage, high frequency inverters Free wheeling, and polarity protection applications. MARKING: B5817W: SJ

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-323 Plastic-Encapsulate Diodes B5817WS-5819WS SOD-323 SCHOTTKY BARRIER DIODE FEATURES For use in low voltage, high frequency inverters Free wheeling, and polarity protection applications MARKING: B5817WS: SJ

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-323 Plastic-Encapsulate Diode B5817WS-5819WS SOD-323 SCHOTTKY BARRIER DIODE + FEATURES For use in low voltage, high frequency inverters Free wheeling, and polarity protection applications. MARKING: B5817WS: SJ

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-123 Plastic-Encapsulate Diode B5817W-5819W SOD-123 SCHOTTKY BARRIER DIODE + FEATURES For use in low voltage, high frequency inverters Free wheeling, and polarity protection applications. MARKING: B5817W: SJ