mm74c922
Abstract: nte CROSS-REFERENCE SJ 76 A DIODE EMI Quad 2 input nand gate cd 4093 7400 functional cross-reference HST 4047 pinout information of CMOS 4001, 4011, 4070 32-Bit Parallel-IN Serial-OUT Shift Register Fairchild Semiconductor Integrated Circuit Data Catalog 1970 application MM74C926
Text: Logic Product Catalog Analog Discrete Interface & Logic Optoelectronics July 2002 Across the board. Around the world. Logic Literature Table of Contents Description Literature # Advanced Logic Products Databook CROSSVOLT , Fairchild Switch, TinyLogic™, VHC
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Power247TM,
mm74c922
nte CROSS-REFERENCE
SJ 76 A DIODE EMI
Quad 2 input nand gate cd 4093
7400 functional cross-reference
HST 4047
pinout information of CMOS 4001, 4011, 4070
32-Bit Parallel-IN Serial-OUT Shift Register
Fairchild Semiconductor Integrated Circuit Data Catalog 1970
application MM74C926
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YM3434
Abstract: 741N AD1860 ym34 AD1851
Text: BACK a FEATURES 110 dB SNR Fast Settling Permits 16؋ Oversampling ؎3 V Output Optional Trim Allows Super-Linear Performance ؎5 V Operation 16-Pin Plastic DIP and SOIC Packages Pin-Compatible with AD1856 & AD1860 Audio DACs 2s Complement, Serial Input APPLICATIONS
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16-Pin
AD1856
AD1860
16-Bit/18-Bit,
AD1851/AD1861
AD1851/
AD1861
AD1851/AD1861
AD1851
16-bit
YM3434
741N
ym34
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PDF
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YM3434
Abstract: AD1851 AD1860 AD1861 SM5813AP AD1851R Yamaha OP AD1851N AD1851N-J AD1856
Text: a FEATURES 110 dB SNR Fast Settling Permits 16؋ Oversampling ؎3 V Output Optional Trim Allows Super-Linear Performance ؎5 V Operation 16-Pin Plastic DIP and SOIC Packages Pin-Compatible with AD1856 & AD1860 Audio DACs 2s Complement, Serial Input APPLICATIONS
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16-Pin
AD1856
AD1860
16-Bit/18-Bit,
AD1851/AD1861
AD1851/
AD1861
AD1862
20-BIT
AD1864
YM3434
AD1851
AD1861
SM5813AP
AD1851R
Yamaha OP
AD1851N
AD1851N-J
AD1856
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mp2a5100
Abstract: ya868c12 YA868C15 2sk4004 YG865C10 F5049 diode 3a05 Diode SMD SJ 24 Diode SMD SJ 09 Diode SMD SJ 28
Text: 富士電機半導体 総 合 カ タ ログ FUJI SEMICONDUCTORS ● パワー MOSFET Power MOSFETs ● 整流ダイオード Rectifier diodes ● パワーデバイス Power devices ● 集積回路 Integrated circuits ● 圧力センサ Pressure sensors
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RH011h
2007-10B120FIS
mp2a5100
ya868c12
YA868C15
2sk4004
YG865C10
F5049
diode 3a05
Diode SMD SJ 24
Diode SMD SJ 09
Diode SMD SJ 28
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PDF
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AD1851
Abstract: No abstract text available
Text: 16-Bit/18-Bit, 16 ؋ FS PCM Audio DACs AD1851/AD1861 a FEATURES 110 dB SNR Fast Settling Permits 16؋ Oversampling ؎3 V Output Optional Trim Allow s Super-Linear Performance ؎5 V Operation 16-Pin Plastic DIP and SOIC Packages Pin-Compatible w ith AD1856 & AD1860 Audio DACs
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Original
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16-Bit/18-Bit,
AD1851/AD1861
16-Pin
AD1856
AD1860
AD1851/
AD1861
24-Pin
AD1851
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PDF
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IPP50R280Ce
Abstract: IPD50R1K4CE IPD50R380CE IPD50R800CE
Text: Product Brief Features 500V CoolMOS CE Power MOSFET The CoolMOS™ CE is a new technology platform of Infineon’s market leading high voltage power MOSFETs designed according to the revolutionary superjunction SJ principle. 500V CE portfolio provides all benefits of a fast switching SJ MOSFET while not
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s07j Do219AB
Abstract: VISHAY MARKING SG vishay sj 96 VISHAY MARKING SJ vishay diode MARKING CODE sg DO219AB S07B S07D S07G S07J
Text: S07B, S07D, S07G, S07J, S07M Vishay Semiconductors Small Signal Switching Diode, High Voltage Features • • • • • For surface mounted applications Low profile package Ideal for automated placement Glass passivated High temperature soldering: 260 °C/10 s
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AEC-Q101
2002/95/EC
2002/96/EC
DO219AB
GS18/10K
GS08/3K
S07B-GS18
S07B-GS08
18-Jul-08
s07j Do219AB
VISHAY MARKING SG
vishay sj 96
VISHAY MARKING SJ
vishay diode MARKING CODE sg
DO219AB
S07B
S07D
S07G
S07J
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PDF
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VISHAY MARKING SG
Abstract: S07D-GS08 s07j Do219AB
Text: S07B, S07D, S07G, S07J, S07M Vishay Semiconductors Small Signal Switching Diode, High Voltage Features • • • • • For surface mounted applications Low profile package Ideal for automated placement Glass passivated High temperature soldering: 260 °C/10 s
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Original
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AEC-Q101
2002/95/EC
2002/96/EC
DO-219AB
GS18/10K
GS08/3K
S07B-GS18
S07B-GS08
S07D-GS18
S07D-GS08
VISHAY MARKING SG
s07j Do219AB
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PDF
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Untitled
Abstract: No abstract text available
Text: S07B / 07D / 07G / 07J / 07M Vishay Semiconductors Small Signal Fast Switching Diode, High Voltage Features • • • • • For surface mounted applications Low profile package e3 Ideal for automated placement Glass passivated High temperature soldering:
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2002/95/EC
2002/96/EC
DO-219AB
S07B-GS18
S07B-GS08
S07D-GS18
S07D-GS08
S07G-GS18
S07G-Gd
D-74025
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PDF
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6R125
Abstract: 6R125C6
Text: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V CoolMOS C6 Power Transistor IPx60R125C6 Data Sheet Rev. 0.9, 2009-08-26 Preliminary In d u s tr ia l & M u l ti m a r k e t 600V CoolMOS™ C6 Power Transistor 1 IPA60R125C6, IPB60R125C6
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IPx60R125C6
IPA60R125C6,
IPB60R125C6
IPP60R125C6
IPW60R125C6
6R125
6R125C6
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PDF
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6r125c6
Abstract: IPx60R125C6 MOSFET TRANSISTOR SMD MARKING CODE A1 INFINEON to-220 date code marking MOSFET TRANSISTOR SMD MARKING CODE 11 IPA60R125C6 IPB60R125C6 IPP60R125C6 to247 pcb footprint JESD22
Text: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V CoolMOS C6 Power Transistor IPx60R125C6 Data Sheet Rev. 2.1, 2010-02-09 Final Industrial & Multimarket 600V CoolMOS™ C6 Power Transistor 1 IPA60R125C6, IPB60R125C6 IPP60R125C6 IPW60R125C6
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IPx60R125C6
IPA60R125C6,
IPB60R125C6
IPP60R125C6
IPW60R125C6
6r125c6
IPx60R125C6
MOSFET TRANSISTOR SMD MARKING CODE A1
INFINEON to-220 date code marking
MOSFET TRANSISTOR SMD MARKING CODE 11
IPA60R125C6
IPB60R125C6
to247 pcb footprint
JESD22
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PDF
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2sa525
Abstract: CA3036 2n1613 replacement CK727 D16P4 NS6205
Text: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,
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PDF
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A1381 transistor
Abstract: 2N5036 CA3036 NF Amp NPN Silicon transistor TO-3 MA3232 20C26 2N5034 package 2N5035 L29a 2N5034
Text: SYMBOLS & CODES EXPLAINED 7. " N ” Channel - SILICON FIELD E F F E C T TRANSISTORS 8. GE RMANIUM P N P 1 9 G ER M AN IU M N P N 1 10. SILICON PN P 1 1 . SILICON NPN LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C I I MIN. MAX Pc T6TT I DERATE FREE I'A E I
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NPN110.
BVCB0-80V
BVCE0-60V
BVEBO-15V
BVCBO-100V
BVCEO-80V
BVEB0-15V
BVCB0-60V
BVCE0-40V
A1381 transistor
2N5036
CA3036
NF Amp NPN Silicon transistor TO-3
MA3232
20C26
2N5034 package
2N5035
L29a
2N5034
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PDF
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NS1000 n
Abstract: CA3036 BVCEO-90V 2CY38 transistor A431 2n1613 replacement A431 UD1001 NS1862 QD401-78
Text: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,
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OCR Scan
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BVCB0-80V
BVCE0-60V
BVEBO-15V
BVCBO-100V
BVCEO-80V
BVEB0-15V
BVCB0-60V
BVCE0-40V
MHM2101
NS1000 n
CA3036
BVCEO-90V
2CY38
transistor A431
2n1613 replacement
A431
UD1001
NS1862
QD401-78
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transistor a640
Abstract: transistor A608 2SC632 transistor 2sC632 2SC634 L14B Pt-100W CA3036 DM02B FV918
Text: SY M B O L S & C O D ES E X P L A IN E D IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,
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OCR Scan
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BVCB0-80V
BVCE0-60V
BVEBO-15V
BVCBO-100V
BVCEO-80V
BVEB0-15V
BVCB0-60V
BVCE0-40V
MHM2101
transistor a640
transistor A608
2SC632
transistor 2sC632
2SC634
L14B
Pt-100W
CA3036
DM02B
FV918
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PDF
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DIODE SJ 98
Abstract: CA3036 silicon epitaxial mesa diode microwave switch V405T DARLINGTON 3A 100V npn array 2n1613 replacement A431 MT726 MT869 MT995
Text: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,
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OCR Scan
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BVCB0-80V
BVCE0-60V
BVEBO-15V
BVCBO-100V
BVCEO-80V
BVEB0-15V
BVCB0-60V
BVCE0-40V
MHM2101
DIODE SJ 98
CA3036
silicon epitaxial mesa diode microwave switch
V405T
DARLINGTON 3A 100V npn array
2n1613 replacement
A431
MT726
MT869
MT995
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PDF
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MARKING H906
Abstract: TELEFUNKEN* U 111 B 4n32 H906
Text: T em ic 4N32/ 4N33 S e m i c o n d u c t o r s Optocoupler with Photodarlington Output Description The 4N32 and 4N 33 consist of a photodarlington opti cally coupled to a gallium arsenide infrared emitting diode in a 6 lead plastic dual inline package. The elem ents are m ounted on one leadfram e using a
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OCR Scan
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4N33S
03-Jun-96
MARKING H906
TELEFUNKEN* U 111 B
4n32
H906
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PDF
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Untitled
Abstract: No abstract text available
Text: «701 T0X 9005 P-N Gallium Arsenide Infrared-Emitting Diode Texas Optoelectronics, Inc. DESCRIPTION FEATURES The TOX 9005 is a 940 nm emitter designed for short distance point to point data transmission and position sensing. Designed to emit near-infrared radiation
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OCR Scan
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MIL-S-19500,
OX9005TX
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PDF
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transistor A431
Abstract: CA3036 a106 transistor A431 transistor d16P4 4JD12X009 A431 BFR14 MA3232 GI3793
Text: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,
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OCR Scan
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BVCB0-80V
BVCE0-60V
BVEBO-15V
BVCBO-100V
BVCEO-80V
BVEB0-15V
BVCB0-60V
BVCE0-40V
MHM2101
transistor A431
CA3036
a106 transistor
A431 transistor
d16P4
4JD12X009
A431
BFR14
MA3232
GI3793
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PDF
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tsta7500
Abstract: No abstract text available
Text: Temic TSTA7500 Semiconductors GaAlAs IR Emitting Diode, Hermetically Sealed TO 18 Case Description TSTA7500 is a high efficiency infrared emitting diode in GaAlAs on GaAlAs technology in a hermetically sealed TO -18 package. Its flat glass window makes it ideal for
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OCR Scan
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TSTA7500
TSTA7500
D-74025
15-Jul-96
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PDF
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Untitled
Abstract: No abstract text available
Text: 1 RECTIFIER DIODE FOR GENERAL USE/BRIDGE FOR GENERAL USE DIODE TYPE Vrrm V rsm : ¡ t* l« tE forward voltage, DC Rth(j-c) If : it a i l « * forward current, DC Rth(j-f) ( i i ^ S B - 7 - r > r.1 ) thermal resistance, junction to fin V fm : f- ? J lM E
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OCR Scan
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PDF
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LS29
Abstract: TRANSISTOR mosfet
Text: SILICON TRANSISTOR CORP Ô2S4G25 St.E D DGDG'ì'ìb Ô3 2 « S T C \ 'Z ° \ 'Z n SILICON TRANSISTOh CORPORATION Katrina Road Chelmsford, Massachusetts 01824 Telephone: 508-256-3321 FAX: 508-250-1046 A POWERHOUSE 100 VOLTS 075 OHMS QUAD N CHANNEL POWER MOSFET
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OCR Scan
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2S4G25
STQ102
ST102
MIL-S-19500
LS29
TRANSISTOR mosfet
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PDF
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telefunken ha 880
Abstract: No abstract text available
Text: T em ic TSHA620 S e m i c o n d u c t o r s GaAlAs Infrared Emitting Diodes in 05 mm T-P/t Package Description The TSHA620. series are high efficiency infrared emit ting diodes in GaAlAs on GaAIAs technology, molded in a clear, untinted plastic package.
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OCR Scan
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TSHA620
TSHA620.
TSHA520.
I5-JuI-96
15-JuI-96
telefunken ha 880
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PDF
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TCDT1102
Abstract: VISHAY MARKING SJ
Text: TCDT1100 G Series Vishay Telefunken T Optocoupler with Phototransistor Output Description The TCDT1100(G) series consists of a photo transistor optically coupled to a gallium arsenide infra red-emitting diode in a 6-lead plastic dual inline package. The elements are mounted on one leadframe using
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OCR Scan
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TCDT1100
11-Jan-99
TCDT110
TCDT110.
TCDT1102
VISHAY MARKING SJ
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PDF
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