SJ 76 A DIODE Search Results

Contextual Info: FCH76N60N N-Channel SupreMOS MOSFET 600 V, 76 A, 36 mΩ Features Description • RDS on = 28 mΩ (Typ.) @ VGS = 10 V, ID = 38 A The SupreMOS® MOSFET is Fairchild Semiconductor’s next generation of high voltage super-junction (SJ) technology employing a deep trench filling process that differentiates it from

fch76n60n

Abstract: 9310 Fairchild SJ 76 A DIODE
Contextual Info: FCH76N60N N-Channel SupreMOS MOSFET 600 V, 76 A, 36 mΩ Features • RDS on = 28 mΩ (Typ.)@ VGS = 10 V, ID = 38 A Description • Ultra Low Gate Charge (Typ.Qg = 218 nC) The SupreMOS® MOSFET is Fairchild Semiconductor®’s next generation of high voltage super-junction (SJ) technology

Contextual Info: FCA76N60N N-Channel SupreMOS MOSFET 600 V, 76 A, 36 mΩ Features Description • RDS on = 28 mΩ (Typ. ) @ VGS = 10 V, ID = 38 A The SupreMOS® MOSFET is Fairchild Semiconductor’s next generation of high voltage super-junction (SJ) technology • Ultra Low Gate Charge (Typ. Qg = 218 nC)

SJ 76 A DIODE datasheet

Abstract: SJ 76 A DIODE
Contextual Info: FCA76N60N N-Channel SupreMOS MOSFET 600 V, 76 A, 36 mΩ Features Description • RDS on = 28 mΩ (Typ. ) @ VGS = 10 V, ID = 38 A The SupreMOS® MOSFET is Fairchild Semiconductor’s next generation of high voltage super-junction (SJ) technology • Ultra Low Gate Charge (Typ. Qg = 218 nC)

FCA76N60N

Abstract: SJ 76 A DIODE
Contextual Info: FCA76N60N N-Channel SupreMOS MOSFET 600 V, 76 A, 36 mΩ Features Description • RDS on = 28 mΩ (Typ.)@ VGS = 10 V, ID = 38 A The SupreMOS® MOSFET is Fairchild Semiconductor®’s next • Ultra Low Gate Charge (Typ. Qg = 218 nC) generation of high voltage super-junction (SJ) technology

Contextual Info: FCH041N60F N-Channel SuperFET II FRFET® MOSFET 600 V, 76 A, 41 mΩ Features Description • 650 V @ TJ = 150°C SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction SJ MOSFET family that is utilizing charge balance technology for outstanding low on-resistance

FCH041N65F

Contextual Info: FCH041N65F N-Channel SuperFET II FRFET® MOSFET 650 V, 76 A, 41 mΩ Features Description • 700 V @ TJ = 150°C SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction SJ MOSFET family that is utilizing charge balance technology for outstanding low on-resistance

Contextual Info: SKiiP 14NAB065V1 CONVERTER, INVERTER, BRAKE Absolute Maximum Ratings Symbol Conditions IGBT - Inverter, Chopper L<DT .< .<1Z L/DT -* R HG S<J 45%7* 2&97'8:*7 *B7?: :76 -* R HG VWOX S< -¥ Diode - Inverter, Chopper MiniSKiiP 1 3-phase bridge rectifier +

AEI SL 803

Abstract: SL-403F SK-1003A SJ103F HL803A S6 68A 803M HL-803A L-803 M6-800R
Contextual Info: LOW POWER DIODES — 0. 2 to 17.5 A including Controlled Avalanche Types Germ anium Diodes Ip AV 3 5 ‘ C • fsm 70 A 1 O A T y p e N o. V rrm G.J G.J G.J GJ 200 3M 4M 5M 6M 75 300 150 O u t lin e 4 V rsm 240 90 36 0 180 Silicon Diodes • f (AV) 2 5 °C

Contextual Info: RELIABILITY REPORT DATE : 5/12/2004 QUALITY ENG : PRODUCT DESCRIPTION: High Frequency PWM White LED Drivers with Internal Schottky Diode and OVP H.Grimm 408 435-3476 PURPOSE : New Product Qualification of MIC2287,MIC2288,MIC2289,MIC2290,MIC2292/93 white LED Drivers

mp2a5100

Abstract: ya868c12 YA868C15 2sk4004 YG865C10 F5049 diode 3a05 Diode SMD SJ 24 Diode SMD SJ 09 Diode SMD SJ 28
Contextual Info: 富士電機半導体 総 合 カ タ ログ FUJI SEMICONDUCTORS ● パワー MOSFET Power MOSFETs ● 整流ダイオード Rectifier diodes ● パワーデバイス Power devices ● 集積回路 Integrated circuits ● 圧力センサ Pressure sensors

Contextual Info: SCHOTTKY RECTIFIER DIODES, MODULE, DUAL M a x im u m IS f P a rt N um ber '•ptif'!'*!? t. A C P U 2035 GPT12040 120 lis lllliiiil CPT12050 mm Peak (a v e rs e V e tte g e T ( C | P IV 140 P e a k F o rw a rd M a x im u m M a x im u m S u r g e C u r r e n t F w d V o ltag e

in4632

Abstract: IN4619 50 watt zener diode 1n4549 14584 IN4575A 1N4549 1N4550 1N4551 1N4552 1N4553
Contextual Info: H H M M M H Z Z Z z z z A * A A A A 2 2 2 2 2 2 M H O M M M z z z A A A 0t W W CO SO 00 sj M H M z z z A A A 0> Ot Ot WWW 9 m A M M M z z z A A A 9 0 lO > CO CO Co W N h MMH* z z z A A A Oi 0 ) 01 co ro ro O lO 00 M z A 01 N) sj M z A 01 N) 01 M M M Z Z Z

Contextual Info: SCHOTTKY BARRIER DIODE 2a / s o v 21DQ03L FEATURES o M in iatu re Size o E x tre m e ly L ow F o rw a rd V oltage D rop o L ow P o w er Loss, H igh E fficiency o H igh S urge C apability 0 20 V olts th ru 100 V olts T y p es A vailable 0 52m m Inside T a p e S pacing P a c k a g e A vailiable

hPND

Contextual Info: • WfT\ 44475Ö4 □OCHb'ia 3T4 ■ H P A HEULETT-PACKAR] / CflPNTS blE J> HEWLETT L Ä I PACKARD B eam L ead PIN D iod es for P h a sed A rrays and S w itch es Technical Data HPND-4018 HPND-4028 HPND-4038 Features 680 27) • Low C ap acitan ce 0.025 pF Maximum at 1 MHz

1N4637

Abstract: IN4620 IN4624 diode 1n4637 1N4639 1N4641 1N4632 1N4644 IN4636 IN4553
Contextual Info: H H M M M H Z Z Z z z z A * A A A A 2 2 2 2 2 2 M H O M M M z z z A A A 0t W W CO SO 00 sj M H M z z z A A A 0> Ot Ot WWW 9 m A M M M z z z A A A 9 0 lO > CO CO Co W N h MMH* z z z A A A Oi 0 ) 01 co ro ro O lO 00 M z A 01 N) sj M z A 01 N) 01 M M M Z Z Z

A1381 transistor

Abstract: 2N5036 CA3036 NF Amp NPN Silicon transistor TO-3 MA3232 20C26 2N5034 package 2N5035 L29a 2N5034
Contextual Info: SYMBOLS & CODES EXPLAINED 7. " N ” Channel - SILICON FIELD E F F E C T TRANSISTORS 8. GE RMANIUM P N P 1 9 G ER M AN IU M N P N 1 10. SILICON PN P 1 1 . SILICON NPN LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C I I MIN. MAX Pc T6TT I DERATE FREE I'A E I

NS1000 n

Abstract: CA3036 BVCEO-90V 2CY38 transistor A431 2n1613 replacement A431 UD1001 NS1862 QD401-78
Contextual Info: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,

2sa525

Abstract: CA3036 2n1613 replacement CK727 D16P4 NS6205
Contextual Info: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,

Contextual Info: 2SK3684-01L,S,SJ FUJI POWER MOSFET 200309 N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings [mm] Features High speed switching No secondary breadown Avalanche-proof Low on-resistance Low driving power Applications P4 Switching regulators DC-DC converters

diode sj

Abstract: 2sk3684 2SK3684-01L
Contextual Info: 2SK3684-01L,S,SJ FUJI POWER MOSFET 200309 N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings [mm] Features High speed switching No secondary breadown Avalanche-proof Low on-resistance Low driving power Applications P4 Switching regulators DC-DC converters

Contextual Info: flUALITY T E C H N O L O G I E S CORP S7E ]> O O O ^ Q ij 7 fl3 I ÖTY European “Pro Electron” Registered T y p e s - CNY31 Optoisolator G aA s Infrared Emitting Diode and N PN Silicon Photo-Darlington Amplifier T h e CNY31 is a g a lliu m a rs e n id e , in f r a r e d e m ittin g d io d e

1N4835

Abstract: 1N4836 IN4740 1N4838 1N4831 1N4834 1N4837 1N4717 1N4733 MICROSEMI 1N4729
Contextual Info: ' Max. Zener Impedance @ In Ohms 0 6 001 001 SO'O 76.0 69.0 5 8 .0 5 3 .0 4 9 .0 64.0 4 5 .0 4 1 .0 3 7 .0 1 0 .0 1 4 .0 1 6 .0 4 5 .0 5 0 .0 6 0 .0 7 0 .0 8 0 .0 9 5 .0 1 1 0 .0 1 2 5 .0 1 5 0 .0 01 0001 1 3 4 .0 3 1 .0 2 8 .0 2 5 .0 2 3 .0 2 1 .0 1 2 0 .0

SJ 76 A DIODE

Abstract: 2sk387201l
Contextual Info: 2SK3872-01L,S,SJ N-CHANNEL SILICON POWER MOSFET Outline Drawings mm 200406 FUJI POWER MOSFET Super FAP-G Series Features High speed switching No secondary breakdown Avalanche-proof Low on-resistance Low driving power See to P4 Applications Switching regulators