Untitled
Abstract: No abstract text available
Text: TOSHIBA 1SV216 TOSHIBA VARIABLE CAPACITANCE DIODE TV VHF UHF TUNER AFC SILICON EPITAXIAL PLANAR TYPE 1 SV2 1 6 Unit in mm + 0.2 CHARACTERISTIC Reverse Voltage Peak Reverse Voltage Junction Temperature Storage Temperature Range SYMBOL Vr V rm Tj Tstg RATING UNIT
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1SV216
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Untitled
Abstract: No abstract text available
Text: TO SHIBA 1 SV 217 TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE 1 SV2 1 7 CATV TUNING. U nit in mm • High Capacitance Ratio : C 2 V /C 2 5 V = 12.5 Typ. • Excellent C-V Characteristics, and Small Tracking Error. 1.25 • + 0.2 0. -
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1SV217
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Sj 33 diode
Abstract: No abstract text available
Text: T O SH IB A 1 SV 217 TO SHIBA VAR IABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE 1 SV2 1 7 C ATV TUN IN G . U nit in mm • High Capacitance Ratio : C 2 V / C 25 V = 12.5 Typ. • Excellent C-V Characteristics, and Small Tracking Error. 0.2 + 1.25 - 0.
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mp2a5100
Abstract: ya868c12 YA868C15 2sk4004 YG865C10 F5049 diode 3a05 Diode SMD SJ 24 Diode SMD SJ 09 Diode SMD SJ 28
Text: 富士電機半導体 総 合 カ タ ログ FUJI SEMICONDUCTORS ● パワー MOSFET Power MOSFETs ● 整流ダイオード Rectifier diodes ● パワーデバイス Power devices ● 集積回路 Integrated circuits ● 圧力センサ Pressure sensors
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RH011h
2007-10B120FIS
mp2a5100
ya868c12
YA868C15
2sk4004
YG865C10
F5049
diode 3a05
Diode SMD SJ 24
Diode SMD SJ 09
Diode SMD SJ 28
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TRK 1703
Abstract: 74124 741244 tfk 223 18 BZX BZX 5.1
Text: ' w B Z X 5 5 / C . . . O Silizium-Epitaxial-Planar-Z-Dioden Silicon epitaxial planar Z diodes Anwendung: Spannungsstabilisierung Applications: Voltage stabilisation Besondere Merkmale: • • • • • Scharfer Abbruch der Sperrkennlinie Niedriges Sperrstrom niveau
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI DIODE MODULES RM50TC-M,-H,-24,-2H MEDIUM POWER GENERAL USE INSULATED TYPE RM50TC-M,-H,-24,-2H lo V r rm DC output cu rre n t. 100A Repetitive peak reverse voltage 4 0 0 /8 0 0 /1 2 0 0 /1 6 00 V 3 phase bridge Insulated Type
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RM50TC-M
E80276
E80271
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Untitled
Abstract: No abstract text available
Text: RF2140 9 '&6 32: 5 $03/, ,(5 7\SLFDO $SSOLFDWLRQV • Commercial and Consumer Systems • 3V DCS1900 (PCS) Cellular Handsets • Portable Battery-Powered Equipment • 3V Dual-Band/Triple-Band Handsets • GPRS Compatible 2 POWER AMPLIFIERS • 3V DCS1800 (PCN) Cellular Handsets
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RF2140
DCS1800
DCS1900
RF2140
DCS1800/1900
1700MHz
2000MHz
10dB/5W
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Untitled
Abstract: No abstract text available
Text: 2SK3650-01L,S,SJ 200304 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings [mm] Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications P4 Switching regulators UPS Uninterruptible Power Supply
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2SK3650-01L
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI DIODE MODULES RM75TPM-M,-H,-24,-2H MEDIUM POWER GENERAL USE INSULATED TYPE RM75TPM-M,-H,-24,-2H lo V r rm DC output cu rre n t. 150A Repetitive peak reverse voltage 4 0 0 /8 0 0 /1 2 0 0 /1 6 00 V 3 phase bridge Insulated Type
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RM75TPM-M
E80276
E80271
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C25P05Q
Abstract: C25P06Q
Text: SCHO TIKY BARRIER DIODE C2SPOSQ C25P06Q 2 7 .7 A /5 0 -6 0 V FEATURES • Similar to TO-247AC TO-3P Case • Dual Diodes - Cathode Comaon • Low Forward Voltage Drop •Low Power Loss, High Efficiency ° High Surge Capability • 20 Volts thru 100 Volte Types Available
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A/50-60V
C25P06Q
O-247AC
47IJISI
571T7TÃ
C25P050
C25P05Q
C25P06Q
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TT390
Abstract: 2RI60G 2X60 P930 T151 T810
Text: 2 R I6 0 G 2 x60A : O utline Drawings POWER DIODE MODULE ¡r : Features 7 X ' < '> '< — > 3 • • M ]1 { t Glass Passivation C hip > • ? " j ~7 Easy C o n n e ctio n • 30 . jé i e M-r?) «».s*,«»?7*.«H»7».°-/ mo.BKa : A p plicatio ns • <
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2RI60G
2X60A)
2RI60G
50/60Hz
I95t/R89)
TT390
2X60
P930
T151
T810
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Untitled
Abstract: No abstract text available
Text: 1SV239 T O SH IB A 1 SV2 3 9 TO SHIBA VAR IABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE Unit in mm VCO FOR UHF RADIO Ultra Low Series Resistance : rs = 0.440 Typ. Useful for Small Size Set + 0.2 1. 2 5 - 0.1 CMi-* do -I- 1 0 ± 0.0 5 + 0.1 + 0.1
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1SV239
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CR356A
Abstract: SM355 SM351 CR344 CR345 CR346 CR347 CR348 CR349 CR350
Text: CURRENT REGULATOR DIODES Pin ch Oft Cun-ent at as VDC U A > IllilsS : P a rt N u m b er Packag e Type Minimum Nominal Maximum Limiting Voltage at 0.811,. V t (V o lts Dynam ic Im pedance at V, =25V Z. (K O h m sJ K nee Im pedance at V.= 6V Z. (K O h m s)
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CR344
CR345
CR346
CR347
CR348
CR349
4SM343
SM344
SM345
SM346
CR356A
SM355
SM351
CR344
CR347
CR349
CR350
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bcore-an-008P
Abstract: BlueCore6 Selection of i2c eeproms for use with bluecore BC63C159A CS-112584-SP CS-116434-ANP CS-112584-SPP CS-116434-An bcore-an-066P JESD22-A224
Text: Device Features • ■ ■ ■ ■ ■ Single Chip Bluetooth v2.1 + EDR System Fully qualified Bluetooth v2.1 + EDR Full speed Bluetooth Operation with Piconet and Scatternet Support Best in Class Bluetooth Radio with +8dBm Transmit Power and -90dBm Receive Sensitivity
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-90dBm
16-bit
BC63C159A
2002/95/EC)
CS-114838-DSP2
bcore-an-008P
BlueCore6
Selection of i2c eeproms for use with bluecore
BC63C159A
CS-112584-SP
CS-116434-ANP
CS-112584-SPP
CS-116434-An
bcore-an-066P
JESD22-A224
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TLP741G
Abstract: No abstract text available
Text: TOSHIBA GaAs IRED & PHOTO-THYRISTOR TLP741G Unit in mm Office Machine Household Use Equipment Solid State Relay Switching Power Supply The Toshiba TLP741G consists of a photo-thyristor optically coupled to a gallium arsenide infrared emitting diode in a six lead plastic DIP package.
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TLP741G
150mA
4000Vrms
500Vac
600Vdc
TLP741G
IEC380/VDE0806
DIN57883/VDE0883/6
VDE0110,
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mm74c922
Abstract: nte CROSS-REFERENCE SJ 76 A DIODE EMI Quad 2 input nand gate cd 4093 7400 functional cross-reference HST 4047 pinout information of CMOS 4001, 4011, 4070 32-Bit Parallel-IN Serial-OUT Shift Register Fairchild Semiconductor Integrated Circuit Data Catalog 1970 application MM74C926
Text: Logic Product Catalog Analog Discrete Interface & Logic Optoelectronics July 2002 Across the board. Around the world. Logic Literature Table of Contents Description Literature # Advanced Logic Products Databook CROSSVOLT , Fairchild Switch, TinyLogic™, VHC
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Power247TM,
mm74c922
nte CROSS-REFERENCE
SJ 76 A DIODE EMI
Quad 2 input nand gate cd 4093
7400 functional cross-reference
HST 4047
pinout information of CMOS 4001, 4011, 4070
32-Bit Parallel-IN Serial-OUT Shift Register
Fairchild Semiconductor Integrated Circuit Data Catalog 1970
application MM74C926
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Untitled
Abstract: No abstract text available
Text: January 1988 Semiconductor MM54HC113/MM74HC113 Dual J-K Flip-Flops with Preset General Description out compatible with the standard 54LS/74LS logic family. All inputs are protected from damage due to static dis charge by internal diode clamps to V cc and ground.
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MM54HC113/MM74HC113
54LS/74LS
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Untitled
Abstract: No abstract text available
Text: January 1988 Semiconductor & MM54HC113/MM74HC113 Dual J-K Flip-Flops with Preset General Description out compatible with the standard 54LS/74LS logic family. All inputs are protected from damage due to static dis charge by internal diode clamps to Mqc and ground.
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MM54HC113/MM74HC11
MM54HC113/MM74HC113
54HC/74HC
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NS1000 n
Abstract: CA3036 BVCEO-90V 2CY38 transistor A431 2n1613 replacement A431 UD1001 NS1862 QD401-78
Text: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,
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BVCB0-80V
BVCE0-60V
BVEBO-15V
BVCBO-100V
BVCEO-80V
BVEB0-15V
BVCB0-60V
BVCE0-40V
MHM2101
NS1000 n
CA3036
BVCEO-90V
2CY38
transistor A431
2n1613 replacement
A431
UD1001
NS1862
QD401-78
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Untitled
Abstract: No abstract text available
Text: SCHOTTKY BARRIER DIODE FCH20A04 20A / 40V 3.11.122 MAX 10.3Í.405) FEATURES 3.4U34Ì. /TCTT5ic o TO-220AB Fully Molded ODual Diodes - Cathode Common o Low Forward Voltage Drop o High Surge Capability oT j = 150‘C operation FC H 20A . • Dimensions in mm Inches)
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FCH20A04
O-220AB
bblS123
02Q53
Q0020S4
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37 TV samsung lcd Schematic circuit diagram
Abstract: smd 475 20k 233 DIODE samsung lcd tv power supply schematic pcb circuit diagram of crt tv samsung BB509 ICSL6256 BA41-01039A schematic diagram crt tv samsung schematic Samsung TV led backlight AP4435
Text: - 이 문서는 삼성전자의 기술 자산으로 승인자만이 사용할 수 있습니다 - This Document can not be used without Samsung's authorization - 8. Block Diagram and Schematic D C B A 4 SAMSUNG PROPRIETARY THIS DOCUMENT CONTAINS CONFIDENTIAL
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BA41-01039A
BA41-01040A
BA41-01041A
BA41-01039A
/Users/mobile29/mentor/Bonn/BONN-INT
37 TV samsung lcd Schematic circuit diagram
smd 475 20k 233 DIODE
samsung lcd tv power supply schematic
pcb circuit diagram of crt tv samsung
BB509
ICSL6256
schematic diagram crt tv samsung
schematic Samsung TV led backlight
AP4435
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Untitled
Abstract: No abstract text available
Text: IIAlC f QiU ZENER DIODES 2.0 WATT ZENER DIODES/P1 /DO-41 Zener Voltage Range Vz @ lz j Volts * Number Maximum ["• i:[i2èiîèïy-: Impedance ZZ T @1ZT (Ohms) Typical sj; Temperature .i-I Coefficient A T iZT O PERATIN G /STO RAG E T EM PER A TU R E -55°CTO +150°C
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/DO-41
ZY100
ZY110
ZY120
ZY130
ZY150
ZY160
ZY180
ZY200
DO-41
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diode ax 277
Abstract: No abstract text available
Text: S /avM *- KU7 S W - I * Schottky Barrier Diode Twin Diode OUTLINE DIMENSIONS S40HC1R5 Package I MTO-3P 22± aa%j T y p e No. » 5 . 0 ±0-3 \r D a te code >Tjl25°C US V f = 0.41V r +0.5 lo-o.^ 4>33±0-2 15V 4 0 A Unit • mm -, \ 2 . 0 ±0-3 S # 2 . 4 ±0-3
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S40HC1R5
Tjl25
S40HC
50HziE5K
50H0HC1R5
25tTYP
J515-5
diode ax 277
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2sa525
Abstract: CA3036 2n1613 replacement CK727 D16P4 NS6205
Text: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,
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