sivn
Abstract: sivn fet
Text: VN0300 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► This enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination
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VN0300
DSFP-VN0300
A122308
sivn
sivn fet
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Untitled
Abstract: No abstract text available
Text: VN2410 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► This enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination
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VN2410
DSFP-VN2410
A020209
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sivn
Abstract: No abstract text available
Text: VN0606 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► This enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination
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VN0606
DSFP-VN0606
A020209
sivn
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sivn
Abstract: sivn fet marking n3 VN0109N3-G VN0109
Text: VN0109 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► This enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination
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VN0109
DSFP-VN0109
A041409
sivn
sivn fet
marking n3
VN0109N3-G
VN0109
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sivn fet
Abstract: sivn
Text: VN1206 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► This enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination
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VN1206
DSFP-VN1206
A020209
sivn fet
sivn
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sivn
Abstract: No abstract text available
Text: VN3515 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description This enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities
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VN3515
DSFP-VN3515
A020209
sivn
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sivn
Abstract: No abstract text available
Text: VN0808 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► This enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination
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VN0808
DSFP-VN0808
A020209
sivn
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VN10K
Abstract: VN0106N3 VN10KN3-G sivn
Text: Supertex inc. VN10K N-Channel Enhancement-Mode Vertical DMOS FET Features General Description Applications Supertex’s vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input
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VN10K
DSFP-VN10K
B031411
VN10K
VN0106N3
VN10KN3-G
sivn
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Untitled
Abstract: No abstract text available
Text: Supertex inc. VN0104 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description Applications Supertex’s vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input
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VN0104
DSFP-VN0104
B071411
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Untitled
Abstract: No abstract text available
Text: Supertex inc. VN0106 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description Applications Supertex’s vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input
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VN0106
DSFP-VN0106
B071411
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125OC
Abstract: VF15 VN0104 VN0104N3-G VN1504NW
Text: Supertex inc. VN0104 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description Applications Supertex’s vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input
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VN0104
DSFP-VN0104
B030411
125OC
VF15
VN0104
VN0104N3-G
VN1504NW
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Untitled
Abstract: No abstract text available
Text: Supertex inc. VN0550 N-Channel Enhancement-Mode Vertical DMOS FET Features ►► ►► ►► ►► ►► ►► ►► General Description Free from secondary breakdown Low power drive requirement Ease of paralleling Low CISS and fast switching speeds
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VN0550
DSFP-VN0550
C081913
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Untitled
Abstract: No abstract text available
Text: Supertex inc. VN0106 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description Applications Supertex’s vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input
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VN0106
DSFP-VN0106
B030411
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sivn
Abstract: VN4E seimens MARKING CODE BV sot-89 125OC VN2450
Text: VN2450 N-Channel Enhancement-Mode Vertical DMOS FETs Features General Description ► ► ► ► This enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with
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VN2450
DSFP-VN2450
A052209
sivn
VN4E
seimens
MARKING CODE BV sot-89
125OC
VN2450
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Untitled
Abstract: No abstract text available
Text: Supertex inc. VN2210 N-Channel Enhancement-Mode Vertical DMOS FETs Features General Description Free from secondary breakdown Low power drive requirement Ease of paralleling Low CISS and fast switching speeds Excellent thermal stability Integral source-drain diode
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VN2210
VN2210
DSFP-VN2210
D071411
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Untitled
Abstract: No abstract text available
Text: Supertex inc. VN10K N-Channel Enhancement-Mode Vertical DMOS FET Features General Description This enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicongate manufacturing process. This combination produces a
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VN10K
DSFP-VN10K
B031411
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Untitled
Abstract: No abstract text available
Text: Supertex inc. VN0109 N-Channel Enhancement-Mode Vertical DMOS FET General Description Features ►► ►► ►► ►► ►► ►► ►► This enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven,
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VN0109
DSFP-VN0109
C081913
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VN10KN3-G
Abstract: No abstract text available
Text: Supertex inc. VN10K N-Channel Enhancement-Mode Vertical DMOS FET Features ►► ►► ►► ►► ►► ►► ►► General Description Free from secondary breakdown Low power drive requirement Ease of paralleling Low CISS and fast switching speeds
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VN10K
DSFP-VN10K
B031411
VN10KN3-G
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sivn
Abstract: 125OC VN0550 VN0550N3-G
Text: VN0550 N-Channel Enhancement-Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► The Supertex VN0550 is an enhancement-mode normallyoff transistor that utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing
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VN0550
VN0550
DSFP-VN0550
A022109
sivn
125OC
VN0550N3-G
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Supertex vn1509nd
Abstract: SIVN01
Text: Supertex inc. VN0109 N-Channel Enhancement-Mode Vertical DMOS FET Features ►► ►► ►► ►► ►► ►► ►► General Description Free from secondary breakdown Low power drive requirement Ease of paralleling Low CISS and fast switching speeds
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VN0109
DSFP-VN0109
B071411
Supertex vn1509nd
SIVN01
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sivn
Abstract: sivn fet vn10k
Text: VN10K N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► This enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination
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VN10K
DSFP-VN10K
A122308
sivn
sivn fet
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sivn
Abstract: VN2224 125OC
Text: VN2224 N-Channel Enhancement-Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► The Supertex VN2224 is an enhancement-mode normallyoff transistor that utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing
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VN2224
VN2224
DSFP-VN2224
A122308
sivn
125OC
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125OC
Abstract: VF15 VN0550 VN0550N3-G VN1550NW
Text: Supertex inc. VN0550 N-Channel Enhancement-Mode Vertical DMOS FETs Features ►► ►► ►► ►► ►► ►► ►► General Description Free from secondary breakdown Low power drive requirement Ease of paralleling Low CISS and fast switching speeds
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VN0550
VN0550
DSFP-VN0550
B030411
125OC
VF15
VN0550N3-G
VN1550NW
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Untitled
Abstract: No abstract text available
Text: Supertex inc. VN0550 N-Channel Enhancement-Mode Vertical DMOS FETs Features General Description Free from secondary breakdown Low power drive requirement Ease of paralleling Low CISS and fast switching speeds Excellent thermal stability Integral source-drain diode
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VN0550
VN0550
DSFP-VN0550
B071411
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