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    SIS7 Search Results

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    SIS7 Price and Stock

    Vishay Siliconix SIS782DN-T1-GE3

    MOSFET N-CH 30V 16A PPAK1212-8
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    DigiKey SIS782DN-T1-GE3 Cut Tape 8,127 1
    • 1 $0.79
    • 10 $0.551
    • 100 $0.79
    • 1000 $0.27866
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    SIS782DN-T1-GE3 Digi-Reel 8,127 1
    • 1 $0.79
    • 10 $0.551
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    SIS782DN-T1-GE3 Reel 6,000 3,000
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    • 10000 $0.23562
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    Cinch Connectivity Solutions JSIS-72

    72-HOLE INSULATED PANEL
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    DigiKey JSIS-72 Bulk
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    Mouser Electronics JSIS-72 10
    • 1 $553.45
    • 10 $553.3
    • 100 $553.3
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    Sullins Connector Solutions ECC17DRSI-S750

    CONN EDGE DUAL FMALE 34POS 0.100
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    DigiKey ECC17DRSI-S750 Tray 10
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    Sullins Connector Solutions ECC15DRSI-S750

    CONN EDGE DUAL FMALE 30POS 0.100
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    DigiKey ECC15DRSI-S750 Tray 10
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    Vishay Siliconix SIS776DN-T1-GE3

    MOSFET N-CH 30V 35A PPAK1212-8
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    SIS7 Datasheets (7)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SiS7014 Silicon Integrated System Single Chip 100Base-TX/10Base-TPhysical Layer Solution Original PDF
    SiS7016 Silicon Integrated System Fast Ethernet PCI Bus 10/100Mbps LANController with OnNow Support Original PDF
    SiS748 Silicon Integrated System North Bridge Chipset Original PDF
    SIS776DN-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 35A 1212-8 Original PDF
    SIS778DN-T1-GE3 Vishay Siliconix Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 30V 35A POWERPAK1212 Original PDF
    SIS780DN-T1-GE3 Vishay Siliconix Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 30V 18A POWERPAK1212 Original PDF
    SIS782DN-T1-GE3 Vishay Siliconix Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 30V 16A POWERPAK1212 Original PDF

    SIS7 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: SiS778DN_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter


    Original     		SiS778DN AN609, CON823 7322m 8153m 1373m 0169m 0125m 9585m 4917m PDF

    Untitled

    Abstract: No abstract text available
    Text: SiS778DN Vishay Siliconix N-Channel 30 V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY RDS(on) () Max. ID (A)e 0.0050 at VGS = 10 V 35 0.0062 at VGS = 4.5 V 35 VDS (V) 30 Qg (Typ.) 13.3 nC PowerPAK 1212-8 S 3.30 mm 3.30 mm 1 APPLICATIONS S 2


    Original     		SiS778DN 2002/95/EC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: New Product SiS780DN Vishay Siliconix N-Channel 30 V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () ID (A) 0.0135 at VGS = 10 V 18a 0.0175 at VGS = 4.5 V 18a Qg (Typ.) 7.3 nC • Halogen-free According to IEC 61249-2-21


    Original     		SiS780DN 2002/95/EC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    W247

    Abstract: SiS730S SiS730
    Text: PRELIMINARY W247 Spread Spectrum FTG for SiS730S Chipset Features • Maximized EMI Suppression using Cypress’s Spread Spectrum technology • Single-chip system frequency synthesizer for SiS730S core logic chip sets • One pair of differential outputs for CPU


    Original     		SiS730S 48-MHz 24-/48-MHz 300-ns 48-pin W247 SiS730 PDF

    Untitled

    Abstract: No abstract text available
    Text: SiS782DN Vishay Siliconix N-Channel 30 V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) ID (A)e RDS(on) () 30 0.0095 at VGS = 10 V 16 0.0120 at VGS = 4.5 V 16 Qg (Typ.) 9.5 nC PowerPAK 1212-8 S 3.30 mm APPLICATIONS 3.30 mm 1 S 2 • Notebook PC


    Original     		SiS782DN 2002/95/EC SiS782DN-T1-GE3 11-Mar-11 PDF

    sis963l

    Abstract: 255KI1 IT8510E 11z2103 7CN16 and pin diagram of MMC 4017 u28 sensor hall pin diagram AMD mobile sempron 80-UG5020-00A UG5001
    Text: 5 4 3 C B A 1 255KIX REV:01 255 / 259KIX D 2 01 COVER PAGE 02 GPIO DEFINITION & POWER CONSUMPTION 03 BLOCK DIAGRAM 04 CPU-ATHLON64-HT 05 CPU-ATHLON64-DDR 06 CPU-ATHLON64-PWR & GND 07 MAIN CLOCK & PCB HOLE 08 DDR CONN 09 DDR PULL UP TERMINATION 10 SIS760 HOST& AGP BUS


    Original     		259KIX 255KIX 37-UH0000-01 37-UH0003-01 35-UG5020-00A 35-UG5070-00A 35-UG5030-00C 35-UG5010-00B 35-UG5040-01 35-UG5000-00B sis963l 255KI1 IT8510E 11z2103 7CN16 and pin diagram of MMC 4017 u28 sensor hall pin diagram AMD mobile sempron 80-UG5020-00A UG5001 PDF

    Untitled

    Abstract: No abstract text available
    Text: New Product SiS780DN Vishay Siliconix N-Channel 30 V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () ID (A) 0.0135 at VGS = 10 V 18a 0.0175 at VGS = 4.5 V 18a Qg (Typ.) 7.3 nC • Halogen-free According to IEC 61249-2-21


    Original     		SiS780DN 2002/95/EC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: W83194BR-740 STEPLESS CLOCK FOR SIS735/740 CHIPSET 1. GENERAL DESCRIPTION The W83194BR-740 is a Clock Synthesizer for SiS 735/740 chipset. W83194BR-740 provides all clocks required for high-speed RISC or CISC microprocessor such as AMD K7, and also provides 16


    Original     		W83194BR-740 SIS735/740 W83194BR-740 PDF

    Untitled

    Abstract: No abstract text available
    Text: SiS776DN Vishay Siliconix N-Channel 30 V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) 30 e RDS(on) () ID (A) 0.0062 at VGS = 10 V 35 0.0087 at VGS = 4.5 V 35 Qg (Typ.) 11.6 nC PowerPAK 1212-8 S 3.30 mm 3.30 mm 1 APPLICATIONS S 2 • System Power


    Original     		SiS776DN 2002/95/EC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    952703BFLF

    Abstract: ICS952703 sis741 952703BF
    Text: ICS952703 Preliminary Product Preview Integrated Circuit Systems, Inc. Programmable Timing Control Hub for K7TM System Recommended Application: SiS741 style chipset with 964 South Bridge. Features/Benefits: • Selectable synchronous/asynchronous AGP/PCI frequency


    Original     		ICS952703 952703BF 952703BFLF PVG48) 952703BFLFT 952703BFT sis741 PDF

    Untitled

    Abstract: No abstract text available
    Text: New Product SiS780DN Vishay Siliconix N-Channel 30 V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () ID (A) 0.0135 at VGS = 10 V 18a 0.0175 at VGS = 4.5 V 18a Qg (Typ.) 7.3 nC • Halogen-free According to IEC 61249-2-21


    Original     		SiS780DN 2002/95/EC SiS780DN-T1-GE3 11-Mar-11 PDF

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model SiS782DN www.vishay.com Vishay Siliconix N-Channel 30 V D-S MOSFET with Schottky Diode DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		SiS782DN 11-Mar-11 PDF

    S11117

    Abstract: No abstract text available
    Text: SiS782DN Vishay Siliconix N-Channel 30 V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) ID (A)e RDS(on) () 30 0.0095 at VGS = 10 V 16 0.0120 at VGS = 4.5 V 16 Qg (Typ.) 9.5 nC PowerPAK 1212-8 S 3.30 mm APPLICATIONS 3.30 mm 1 S 2 • Notebook PC


    Original     		SiS782DN 2002/95/EC SiS782DN-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 S11117 PDF

    Untitled

    Abstract: No abstract text available
    Text: New Product SiS780DN Vishay Siliconix N-Channel 30 V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () ID (A) 0.0135 at VGS = 10 V 18a 0.0175 at VGS = 4.5 V 18a Qg (Typ.) 7.3 nC • Halogen-free According to IEC 61249-2-21


    Original     		SiS780DN 2002/95/EC SiS780DN-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: SiS782DN Vishay Siliconix N-Channel 30 V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) ID (A)e RDS(on) () 30 0.0095 at VGS = 10 V 16 0.0120 at VGS = 4.5 V 16 Qg (Typ.) 9.5 nC PowerPAK 1212-8 S 3.30 mm APPLICATIONS 3.30 mm 1 S 2 • Notebook PC


    Original     		SiS782DN 2002/95/EC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    sis735

    Abstract: crystal 6 Mhz sis 735 k7 W83194BR-740 sis 735
    Text: W83194BR-740 STEPLESS CLOCK FOR SIS735/740 CHIPSET W83194BR-740 Data Sheet Revision History Pages Dates Version Version Main Contents On Web 1 n.a. 2 n.a. 02/Apr 1.0 n.a. All of the versions before 0.50 are for internal use. 1.0 Change version and version on web site to 1.0


    Original     		W83194BR-740 SIS735/740 02/Apr sis735 crystal 6 Mhz sis 735 k7 W83194BR-740 sis 735 PDF

    6867

    Abstract: SIS755
    Text: ICS952802 Advance Information Integrated Circuit Systems, Inc. Programmable Timing Control Hub for P4™ processor Recommended Application: SiS755/760 style chipset for AMD K8 Processor Features/Benefits: • Selectable synchronous/asynchronous AGP/PCI/ZCLK


    Original     		ICS952802 SiS755/760 48MHz 12MHz 250ps 250ps ICS952802 AVDD48 48MHz/SEL12 6867 SIS755 PDF

    7400 series CMOS Logic ICs

    Abstract: No abstract text available
    Text: ICS952702 Integrated Circuit Systems, Inc. Programmable Timing Control Hub for K7TM System Recommended Application: SiS746/746FX style chipset Output Features: • 1 - Pair of differential open drain CPU outputs • 1 - Single-ended open drain CPU output •


    Original     		ICS952702 SiS746/746FX 48MHz 250ps 500ps MO-118 ICS952702y 7400 series CMOS Logic ICs PDF

    Untitled

    Abstract: No abstract text available
    Text: New Product SiS780DN Vishay Siliconix N-Channel 30 V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () ID (A) 0.0135 at VGS = 10 V 18a 0.0175 at VGS = 4.5 V 18a Qg (Typ.) 7.3 nC • Halogen-free According to IEC 61249-2-21


    Original     		SiS780DN 2002/95/EC SiS780DN-T1-GE3 11-Mar-11 PDF

    SIS7535N

    Abstract: No abstract text available
    Text: SHIELDED SURFACE MOUNT POWER INDUCTOR E & E Magnetic Products Limited Drum Type, SIS7535X Series SCHEMATICS Magnetically Shielded Miniature in size and high energy storage Ideal for high current requirements of notebook, video recorders and other DC-DC conversion


    Original     		SIS7535X SIS7535N-0R6R SIS7535N-1Rite: PI213 SIS7535N PDF

    Untitled

    Abstract: No abstract text available
    Text: SiS776DN Vishay Siliconix N-Channel 30 V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) 30 e RDS(on) () ID (A) 0.0062 at VGS = 10 V 35 0.0087 at VGS = 4.5 V 35 Qg (Typ.) 11.6 nC PowerPAK 1212-8 S 3.30 mm 3.30 mm 1 APPLICATIONS S 2 • System Power


    Original     		SiS776DN 2002/95/EC SiS776DN-T1-GE3 11-Mar-11 PDF

    Untitled

    Abstract: No abstract text available
    Text: SiS776DN Vishay Siliconix N-Channel 30 V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) 30 e RDS(on) () ID (A) 0.0062 at VGS = 10 V 35 0.0087 at VGS = 4.5 V 35 Qg (Typ.) 11.6 nC PowerPAK 1212-8 S 3.30 mm 3.30 mm 1 APPLICATIONS S 2 • System Power


    Original     		SiS776DN 2002/95/EC SiS776DN-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: ICS952703 Preliminary Product Preview Integrated Circuit Systems, Inc. Programmable Timing Control Hub for K7TM System Recommended Application: SiS741 style chipset with 964 South Bridge. Features/Benefits: • Selectable synchronous/asynchronous AGP/PCI frequency


    Original     		ICS952703 MO-118 95XXXX 813A--04/01/05 PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SC5257 TO SHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE i <;r MT sis7 V M V H F -U H F B AN D LO W NOISE AMPLIFIER APPLICATIONS Low Noise Figure : N F = 1.5dB f=2G H z H igh Gain : Gain = lOdB (f = 2GHz) M A X IM U M RATINGS (Ta = 25°C) SYM BOL


    OCR Scan     		2SC5257 PDF