SILICONIX TRANSISTOR MARKING Search Results

Contextual Info: SiP4282A Vishay Siliconix 1.2 A Slew Rate Controlled Load Switch in PPAK SC75-6 DESCRIPTION FEATURES The SiP4282A is a P-Channel MOSFET power switch IC designed for high-side load switching applications. The output switching transistor is a P-Channel MOSFET device

73851

Contextual Info: New Product SiP4282 Vishay Siliconix 1 A Slew Rate Controlled Load Switch in PPAK SC75-6 DESCRIPTION FEATURES The SiP4282 is a P-Channel MOSFET power switch IC designed for high-side load switching applications. The output switching transistor is a P-Channel MOSFET device

SC75

Abstract: SC-75 SiP4282A
Contextual Info: New Product SiP4282A Vishay Siliconix 1.2 A Slew Rate Controlled Load Switch in PPAK SC75-6 DESCRIPTION FEATURES The SiP4282A is a P-Channel MOSFET power switch IC designed for high-side load switching applications. The output switching transistor is a P-Channel MOSFET device

SUD45P03-15

Contextual Info: SPICE Device Model SUD45P03-15 Vishay Siliconix P-Channel Enhancement-Mode Transistor CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model Subcircuit Model • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

SUD45P03-10

Contextual Info: SPICE Device Model SUD45P03-10 Vishay Siliconix P-Channel Enhancement-Mode Transistor CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model Subcircuit Model • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

SUD30N03-30

Contextual Info: SPICE Device Model SUD30N03-30 Vishay Siliconix N-Channel Enhancement-Mode Transistor CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model Subcircuit Model • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Contextual Info: New Product SiP4282A Vishay Siliconix 1.2 A Slew Rate Controlled Load Switch in PPAK SC75-6 DESCRIPTION FEATURES The SiP4282A is a P-Channel MOSFET power switch IC designed for high-side load switching applications. The output switching transistor is a P-Channel MOSFET device

73851

Abstract: SC75 SC-75 SiP4282 SiP4282-1-T1-E3 SiP4282-3-T1-E3 SiP4282DVP-1-T1-E3
Contextual Info: New Product SiP4282 Vishay Siliconix 1 A Slew Rate Controlled Load Switch in PPAK SC75-6 DESCRIPTION FEATURES The SiP4282 is a P-Channel MOSFET power switch IC designed for high-side load switching applications. The output switching transistor is a P-Channel MOSFET device

Contextual Info: New Product SiP4282A Vishay Siliconix 1.2 A Slew Rate Controlled Load Switch in PPAK SC75-6 DESCRIPTION FEATURES The SiP4282A is a P-Channel MOSFET power switch IC designed for high-side load switching applications. The output switching transistor is a P-Channel MOSFET device that

TR1111

Contextual Info: SPICE Device Model SUP/SUB60N06-18 Vishay Siliconix N-Channel Enhancement-Mode Transistor CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model Subcircuit Model • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

SUD45N05-20L

Contextual Info: SPICE Device Model SUD45N05-20L Vishay Siliconix N-Channel Enhancement-Mode Transistor, Logic Level CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model Subcircuit Model • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Contextual Info: SPICE Device Model SUP/SUB75P03-08 Vishay Siliconix P-Channel Enhancement-Mode Transistor CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model Subcircuit Model • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

SiP4282DVP-1-T1-E3

Abstract: SC-75 SiP4282 SiP4282-1-T1-E3 SiP4282-3-T1-E3 SC75 JAN p-channel mosfet transistor low power
Contextual Info: New Product SiP4282 Vishay Siliconix 1 A Slew Rate Controlled Load Switch in PPAK SC75-6 DESCRIPTION FEATURES The SiP4282 is a P-Channel MOSFET power switch IC designed for high-side load switching applications. The output switching transistor is a P-Channel MOSFET device that

AN804

Abstract: TP0202T
Contextual Info: TP0202T Siliconix PĆChannel EnhancementĆMode MOS Transistor Product Summary V BR DSS Min (V) -20 rDS(on) Max (W) VGS(th) (V) ID (A) 1.4 @ VGS = -10 V -1.3 to - 3 V -0.31 3.5 @ VGS = -4.5 V -1.3 to - 3 V -0.16 For applications information see AN804. Features

67031

Abstract: Si5711EDU-T1-GE3 Si5711EDU si5711
Contextual Info: Si5711EDU Vishay Siliconix P-Channel 20 V D-S MOSFET and PNP Low VCE(sat) Switching Transistor FEATURES MOSFET - PRODUCT SUMMARY VDS (V) - 20 RDS(on) () ID (A) 0.059 at VGS = - 4.5 V - 6a 0.096 at VGS = - 2.5 V - 6a • Halogen-free According to IEC 61249-2-21

TN2010T

Contextual Info: TN2010T Siliconix NĆChannel EnhancementĆMode MOS Transistor Product Summary V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) 200 11 0.8 to 3.0 0.085 Features Benefits Applications D D D D D D D D D D D HighĆVoltage Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Transistors, etc.

A37 diode

Abstract: diode 66a TN0201T
Contextual Info: TN0201T Siliconix NĆChannel EnhancementĆMode MOS Transistor Product Summary V BR DSS Min (V) rDS(on) Max (W) 1.0 @ VGS = 10 V 20 1.4 @ VGS = 4.5 V VGS(th) (V) ID (A) 1.0 to 3.0 0.3 Features Benefits Applications D D D D D D D D D D D Direct LogicĆLevel Interface: TTL/CMOS

Contextual Info: Tem ic TP0202T Siliconix P-Channel Enhancement-Mode MOS Transistor Product Summary V br dss M in (V) fD S(on) -2 0 M ax (Q) V GS(lh) In (A) (V) 1.4 @ VGS = -1 0 V -1 .3 to - 3 V -0.31 3.5 @ VGS = -4 .5 V -1 .3 to - 3 V -0.16 For applications information see AN804, page 12-43.

52426

Abstract: siliconix transistor marking TN0201T n1 marking marking codes n1 transistors sot-23 sot23 marking code 02
Contextual Info: TN0201T Siliconix N-Ch Enhancement-Mode MOSFET Transistor PRODUCT SUMMARY V BR DSS MIN (V) 20 rDS(on) MAX (W) 1.0 @ VGS = 10 V VGS(th) (V) ID (A) 1 0 to 3.0 1.0 30 0 39 0.39 1.4 @ VGS = 4.5 V FEATURES BENEFITS APPLICATIONS D D D D D D D D D D D Direct Logic-Level Interface: TTL/CMOS

SIP21110

Contextual Info: SiP21110 Vishay Siliconix 250-mA Adjustable, Low Dropout Regulator DESCRIPTION FEATURES The SiP21110 BiCMOS 250 mA LDO voltage regulators are the perfect choice for low battery operated low powered applications. An Ultra low ground current and low dropout

SIP21110

Abstract: SIP21110DT
Contextual Info: SiP21110 Vishay Siliconix 250-mA Adjustable, Low Dropout Regulator DESCRIPTION FEATURES The SiP21110 BiCMOS 250 mA LDO voltage regulators are the perfect choice for low battery operated low powered applications. An Ultra low ground current and low dropout

SiP21110

Abstract: SIP21110DT SIP21110DT-T1-E3 TSOT23-5L a 1046 transistor
Contextual Info: SiP21110 Vishay Siliconix 250-mA Adjustable, Low Dropout Regulator DESCRIPTION FEATURES The SiP21110 BiCMOS 250 mA LDO voltage regulators are the perfect choice for low battery operated low powered applications. An ultra low ground current and low dropout

SiP21107DT-46-E3

Abstract: SiP21106 SiP21107 SiP21108 TSC75-6L TSOT23-5L E3- marking
Contextual Info: New Product SiP21106/7/8 Vishay Siliconix 150-mA Low Noise, Low Dropout Regulator APPLICATIONS • • • • • • FEATURES • TSC75-6L Package 1.6 x 1.6 x 0.6 mm , and Cellular Phones, Wireless Handsets PDAs MP3 Players Digital Cameras Pagers Wireless Modem

TSC75-6L

Abstract: SC70-5L SiP21106 SiP21107 SiP21108 TSOT23-5L sc70-5lpackage
Contextual Info: SiP21106/7/8 Vishay Siliconix 150-mA Low Noise, Low Dropout Regulator APPLICATIONS • • • • • • FEATURES • SC70-5L 2.1 x 2.1 x 0.95 mm • TSOT23-5L (3.05 x 2.85 x 1.0 mm) • TSC75-6L Package (1.6 x 1.6 x 0.55 mm), Cellular Phones, Wireless Handsets