SILICONIX 511 Search Results
SILICONIX 511 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
---|---|---|---|
PA 0016 PIONEER
Abstract: Pioneer PA 0016 transistors br 6822 MPF104 I9951D Johnson motor 2 607 022 013 2SK109 equivalent V01000J DG5043CK IRF4431
|
OCR Scan |
J-23548 K28742 PA 0016 PIONEER Pioneer PA 0016 transistors br 6822 MPF104 I9951D Johnson motor 2 607 022 013 2SK109 equivalent V01000J DG5043CK IRF4431 | |
HA 12046
Abstract: HA 12045 DG126 DG129 DG140 A2547 12049 DG129BP
|
OCR Scan |
A25473S DD1S043 DG126/129/140 T-51-11 DQ126, DG129 DG140 HA 12046 HA 12045 DG126 A2547 12049 DG129BP | |
siliconix fet
Abstract: Transistor E112 FET N-Channel JFET TRANSISTOR REPLACEMENT GUIDE j201 E112 jfet jfet bfw10 terminals JFET BFW10 SPECIFICATIONS 4856a mosfet Transistor E112 FET FETs in Balanced Mixers Ed Oxner equivalent components FET BFW10
|
OCR Scan |
J-23548 K24123 i39-40i NZ3766 53-C-03 siliconix fet Transistor E112 FET N-Channel JFET TRANSISTOR REPLACEMENT GUIDE j201 E112 jfet jfet bfw10 terminals JFET BFW10 SPECIFICATIONS 4856a mosfet Transistor E112 FET FETs in Balanced Mixers Ed Oxner equivalent components FET BFW10 | |
DG200ABAContextual Info: SILICONIX INC 03 8254735 SILICONIX D e | flES4735 DD1S1E4 7 | INC 03E 12124 DG200A Dual Monolithic SPST CMOS Analog Switch D f f 1 Siliconix .J tV incorporated T—51—11 FEATURES BENEFITS APPLICATIONS • + 15 V Input Signal Range • Wide Dynamic Capabilities |
OCR Scan |
flES4735 DG200A T--51--11 DG200A DG200ABA | |
ILS-1206
Abstract: Vishay Siliconix COILCRAFT DT3316-103 sprague catalog CRCW1206101J DT3316 VJ1206Y103KXA VJ1206Y103KXAAT Surface mount NPN/PNP complementary transistor VJ1206Y222KXAAT
|
Original |
AN715 Si9145 Si9145 CRCW1206102JRT1 CRCW1206103JRT1 CRCW12065110FRT1 CRCW12061000FRT1 ILS-1206 Vishay Siliconix COILCRAFT DT3316-103 sprague catalog CRCW1206101J DT3316 VJ1206Y103KXA VJ1206Y103KXAAT Surface mount NPN/PNP complementary transistor VJ1206Y222KXAAT | |
SILICONIX DG201
Abstract: DG202 SILICONIX DQ202 DG201A dg201abk siliconix DG201 dg202cj siliconix
|
OCR Scan |
55473S DG201 yDQ201A DG202 DG201A DG202 2S4735 T-51-11 X1000) SILICONIX DG201 DG202 SILICONIX DQ202 dg201abk siliconix dg202cj siliconix | |
VP0610T
Abstract: over charge protection circuit diagram for 12V ni mh DT-1608-104 2N7002 AN710 AN715 IN4148 LL4148 Si9114 Si9145
|
Original |
AN715 Si9145 Si9145 VP0610T over charge protection circuit diagram for 12V ni mh DT-1608-104 2N7002 AN710 AN715 IN4148 LL4148 Si9114 | |
D10DE
Abstract: DGP508A HP3330B DGP508AAK DGP508ADJ
|
OCR Scan |
25473S DGP508A DG508A DGP508A 00123SA T-51-11 D10DE HP3330B DGP508AAK DGP508ADJ | |
HP3330BContextual Info: SILICONIX INC 03 8254735 SILICONIX DiEJ ÛBS4735 0015H40 1 INC 03E 12240 DG400-405 Low-Power - High-Speed CMOS Analog Switches j y Silîconlx Incorporated T-51-11 FEATURES BENEFITS APPLICATIONS • +15. V Input Range • Wide Dynamic Range • ON Resistance < 35 Cl |
OCR Scan |
BS4735 0015H40 DG400-405 T-51-11 DG400 DG403 DQ403I HP3330B | |
Siliconix Application Note
Abstract: 9b47 2N7002 AN710 AN715 IN4148 LL4148 Si9114 Si9145 VP0610T
|
Original |
AN715 Si9145 Si9145 Siliconix Application Note 9b47 2N7002 AN710 AN715 IN4148 LL4148 Si9114 VP0610T | |
Siliconix dg506acj
Abstract: DG506A SILICONIX b5473 SI8601 en 12341 DQ506AAR DQ506A
|
OCR Scan |
2S4735 001S331 DG506A/507A 16-Channel T-51-11 DG506A DG507A B5473S T-51-11 Siliconix dg506acj DG506A SILICONIX b5473 SI8601 en 12341 DQ506AAR DQ506A | |
CD4001 Application
Abstract: OWR1 DG305Acj
|
OCR Scan |
a2s473s DG304A/305A/306A/3Ã t-51-11 DG304A DG307A 001s2es DG304A/305A/306A/307A t-51-11 CD400 CD4001 CD4001 Application OWR1 DG305Acj | |
og5040-5045
Abstract: DG5045CJ DG5044 D0504 7511 audio output dg5042ak
|
OCR Scan |
as5i735 DG5040-5045 T-51-11 DQ5040 Q01542S og5040-5045 DG5045CJ DG5044 D0504 7511 audio output dg5042ak | |
Contextual Info: Package Reliability www.vishay.com Vishay Siliconix ENVIRONMENTAL AND PACKAGE TESTING DATA FOR Super-247 STRESS SAMPLE SIZE DEVICE HR./CYC CONDITION TOTAL FAILS 85/85 551 511 000 85 °C, 85 % RH FAIL PERCENTAGE 0.00 HAST 530 53 000 130 C, 85 % RH 0.00 Power Cycle |
Original |
Super-247 15-May-12 | |
|
|||
Contextual Info: 2N5114/5115/5116 Vishay Siliconix P-Channel JFETs PRODUCT SUMMARY Part Number VGS off (V) rDS(on) Max (W) ID(off) Typ (pA) tON Max (ns) 2N5114 5 to 10 75 –10 16 2N5115 3 to 6 100 –10 30 2N5116 1 to 4 150 –10 42 FEATURES BENEFITS APPLICATIONS D D D D |
Original |
2N5114/5115/5116 2N5114 2N5115 2N5116 08-Apr-05 | |
2N5114
Abstract: 2N5116 2N4856A 2N5115 AN104
|
Original |
2N5114/5115/5116 2N5114 2N5115 2N5116 2N5114 S-04030--Rev. 04-Jun-01 2N5116 2N4856A 2N5115 AN104 | |
2N5114
Abstract: "P-Channel JFET" "P-Channel JFETs" 2N5116 2N4856A 2N5115 AN104
|
Original |
2N5114/5115/5116 2N5114 2N5115 2N5116 2N5114 18-Jul-08 "P-Channel JFET" "P-Channel JFETs" 2N5116 2N4856A 2N5115 AN104 | |
2N5114
Abstract: 2N4856A 2N5115 2N5116 AN104
|
Original |
2N5114/5115/5116 2N5114 2N5115 2N5116 2N5116, AN104, 2N5114 2N4856A 2N5115 2N5116 AN104 | |
Contextual Info: SPICE Device Model SiR800DP Vishay Siliconix N-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C |
Original |
SiR800DP 18-Jul-08 | |
Contextual Info: SQJ486EP_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter |
Original |
SQJ486EP AN609, 9221m 3195m 2880m 1524u 5611m 9498m 8169u 11-Dec-14 | |
30338Contextual Info: SiHF6N40D_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter |
Original |
SiHF6N40D AN609, 3295m 8466m 4074m 4955m 3326m 12-Jun-12 30338 | |
Contextual Info: SiHF5N50D_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter |
Original |
SiHF5N50D AN609, 0725m 8519m 4093m 7670m 6617m 22-May-12 | |
Contextual Info: 2N5114J AN/J ANTX/JANTXV Series Vishay Siliconix P-Channel JFETs 2N 5114 J AN/J ANTX/JANTXV 2N 5115J AN/J ANTX/JANTXV 2N 5116 J AN/JANTX/J ANTXV PRODUCT SUMMARY Part Number VGS off (V) r D S(on) Max (£2) Id (off) TVp (pA) toN Max (ns) 2N5114 5 to 10 75 -1 0 |
OCR Scan |
2N5114J 5115J 2N5114 2N5115 2N5116 S-04030--Rev. 04-Jun-01 2N5114 2N5115 | |
Contextual Info: IRFIBF20G_RC, SiHFIBF20G_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter |
Original |
IRFIBF20G SiHFIBF20G AN609, 31-May-10 |