SILICON UNILATERAL SWITCH Search Results

nte 6408

Contextual Info: SPECIAL DEVICES SILICON UNILATERAL SWITCH SUS NTE Type Number 6404 Case Style T098 Diagram Number 5 Forward Switching Voltage (Volts) Forward Current foA) Holding Current {mA) Power Dissipation (mW) DC Forward Anode Cunent (mA) Peak Recurrent Forward Current

NTE6404

Abstract: four-layer diode Silicon unilateral switch four layer diode SCR 30v
Contextual Info: NTE6404 Silicon Unilateral Switch SUS Description: The NTE6404 is a silicon planar, monolithic integrated circuit having thyristor electrical characteristics closely approximating those of an “ideal” four layer diode. The device is designed to switch at 8 volts

2N4990

Abstract: 2N4987 SUS 2N4987 SUS GE 2N4987 2N4989 2N4988 Silicon unilateral switch 42322 DETJ3075001 2N4987-90
Contextual Info: G E SOLID STATE □1 DE I 3fl750fll □□1ÛD11 3 | 0 1E 18011 3875081 G E SOLID STATE D . Unijunction Transistors and Switches 2N4987, 2N4988, 2N4989, 2N4990 T ' Z S - c ^ Silicon Unilateral Switch Applications: • SCR Triggers ■ Frequency Drivers ■ Ring Counters

Contextual Info: ^Semi-Conductor ^Products., fine. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 2N4988 Silicon unilateral switch (SUS) in package TO-92 Pinouts: 1-Cathode, 2-Gate, 3-Anode Ratings rrm lT<rms>

Silicon unilateral switch

Abstract: DG1U SUS GE 2N4987 2N4987 equivalent 2N4987 GE 2N4988 2n498 2N4988 soli capacitors
Contextual Info: "ÏÏÏ G E SOLID STATE DE|3fl750fll DGlflDll 3 | 0 1E 18011 387 5 08 1 G E S O L I D ST A T E D Unijunction Transistors and Switches 2N4987, 2N4988, 2N4989, 2N4990 T 'Z S -c ^ Silicon Unilateral Switch Applications: • SCR Triggers ■ Frequency Drivers

SUS 2N4987

Abstract: 2N4987 Silicon unilateral switch
Contextual Info: 2N4987 Silicon unilateral switch SUS in package TO-92 0.45max 0.7max 1 5.2 1.6 2 2.5 14.5 5.2 3 4.2 Pinouts: 1- Cathode, 2- Gate, 3- Anode Ratings Symbol Vrrm IT(rms) Igm IT(sm) P Parameter, units Limits Peak reverse voltage, V DC forward anode current, mA

2N4988

Abstract: Silicon unilateral switch
Contextual Info: 2N4988 Silicon unilateral switch SUS in package TO-92 0.45max 0.7max 1 5.2 1.6 2 2.5 14.5 5.2 3 4.2 Pinouts: 1- Cathode, 2- Gate, 3- Anode Ratings Symbol Vrrm IT(rms) Igm IT(sm) P Parameter, units Limits Peak reverse voltage, V DC forward anode current, mA

2N4990

Abstract: Silicon unilateral switch 2N4990+SUS
Contextual Info: 2N4990 Silicon unilateral switch SUS in package TO-92 0.45max 0.7max 1 5.2 1.6 2 2.5 14.5 5.2 3 4.2 Pinouts: 1- Cathode, 2- Gate, 3- Anode Ratings Symbol Vrrm IT(rms) Igm IT(sm) P Parameter, units Limits Peak reverse voltage, V DC forward anode current, mA

3N81

Abstract: IN4148 anode cathode 2N4983 3N84 eto thyristor thyristor igc TRANSISTOR BO 344 2N4987 2N4985 thyristor eto
Contextual Info: SILICON UNILATERAL AND BILATERAL SWITCHES SUS, SBS The General E le c tric S U S is a s ilic o n , planar m on olith ic integrated c irc u it having th yristo r e le ctrica l ch a ra cte ris tics clo se ly a pproxi­ m ating those of an '‘id ea l” fo u r-la yer diode. Th e d e vice is designed to sw itch at 8 vo lts w ith a typ ica l tem perature coefficient of

2N2646 equivalent

Abstract: SUS-2N4989 2N4988 2N4991 3N81 3n84 D5K2 20 amp 800 volt triac 2N4983 EQUIVALENT 2N1671
Contextual Info: UNIJUNCTIONS, TRIGGERS AND SWITCHES Since the introduction of the commercial silicon unijunction transistor in 1956, General Electric has continued de­ veloping an extensive line of negative resistance threshold and four-layer switch devices. Each of these devices can

mrf901

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon High-Frequency Ttansistor . . . designed primarily for use in high-gain, iow-noise, small-signal amplifiers. Also usable in applications requiring fast switching times. • High Current-Gain — Bandwidth Product —

ujt transistor 2n2160

Abstract: 2N2160 2N602B General electric SCR 2n2222 germanium UJT 2N2646 2N4891 2n2646 ujt UJT 43 Programmable Unijunction Transistor applications of ujt with circuits
Contextual Info: UNIJUNCTIONS, TRIG G ERS AND SWITCHES Since the introduction of the commercial silicon unijunction transistor in 1956, General Electric has continued de­ veloping an extensive line of negative resistance threshold and four-layer switch devices. Each of these devices can

2N4985

Abstract: 2N2646 cross reference 2N4984 2n2646 equivalent 2N2646 2N4983 2N4991 GE SCR cross reference 2n4992 EQUIVALENT 2N1671
Contextual Info: UNIJUNCTIONS, TRIGGERS AND SWITCHES S in c e th e intro du ctio n o f th e co m m ercial silic o n u n iju n c tio n tran sisto r in 1 9 5 6 , G eneral E le c tric has co n tin u e d d e­ velop ing an extensive lin e o f negative resistan ce th resho ld an d fo u r-lay er sw itch devices. Each o f th ese devices can

2n2646 equivalent

Abstract: SUS-2N4986 IN5059 3N84 2N4987-90 SUS 2N4987 2N4987 equivalent ge motor capacitor cross reference equivalent transistor of 2n6027 CIRCUITS BY USING 2N6027
Contextual Info: UNIJUNCTIONS, TRIGGERS AND SWITCHES S in c e th e intro du ctio n o f th e co m m ercial silic o n u n iju n c tio n tran sisto r in 1 9 5 6 , G eneral E le c tric has co n tin u e d d e­ velop ing an extensive lin e o f negative resistan ce th resho ld an d fo u r-lay er sw itch devices. Each o f th ese devices can

2SC5829

Abstract: NP0A547
Contextual Info: Composite Transistors NP0A547 Silicon NPN epitaxial planar type Unit: mm For high-speed switching 0.12+0.03 -0.02 4 2 3 0.10 1 0.35 (0.35) 1.00±0.05 (0.10) Display at No.1 lead • Basic Part Number • 2SC5829 x 2 1: Base (Tr1) 2: Emitter (Tr1) 3: Base (Tr2)

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors NP0A547 Silicon NPN epitaxial planar type Unit: mm For high-speed switching 0.12+0.03 -0.02 4 2 3 0.10 1 (0.35) (0.35) 1.00±0.05 (0.10) Display at No.1 lead • Basic Part Number

mps901

Abstract: MRF901
Contextual Info: MOTOROLA Order this document by MMBR901LT1/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon MMBR901LT1, T3 High-Frequency Transistor MPS901 MRF901 Designed primarily for use in high–gain, low–noise small–signal amplifiers for operation up to 2.5 GHz. Also usable in applications requiring fast switching

2SC5829

Abstract: NP0A547
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors NP0A547 Silicon NPN epitaxial planar type Unit: mm For high-speed switching 0.12+0.03 -0.02 4 2 1.00±0.05 3 0.10 1 (0.35) (0.35) 1.00±0.05 • 2SC5829 x 2 1: Base (Tr1)

2n2646 equivalent

Abstract: 2N2646 triac phase control 2N602B 2N4991 EQUIVALENT 2N1671 four-layer diode SBS thyristor 2N4987 3n84
Contextual Info: UNIJUNCTIONS, TRIGGERS AND SWITCHES Since the introduction of the commercial silicon unijunction transistor in 1956, General Electric has continued de­ veloping an extensive line of negative resistance threshold and four-layer switch devices. Each of these devices can

2SC5829

Abstract: NP0A547
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors NP0A547 Silicon NPN epitaxial planar type Unit: mm For high-speed switching 0.12+0.03 -0.02 4 1 2 0 to 0.02 3 0.10 M Di ain sc te on na tin nc ue e/ d (0.35) (0.35) 1.00±0.05

UJT 2N2646 specification

Abstract: UJT 2N2646 ratings UJT 2N2646 UJT 2N2646 operation 2n2646 ujt D5K2 ujt 2N6027 ujt transistor scr firing circuit UJT triggering circuit UJT 2N2646 RANGE
Contextual Info: UNIJUNCTIONS, TRIGGERS AND SWITCHES Since the introduction of the commercial silicon unijunction transistor in 1956, General Electric has continued de­ veloping an extensive line of negative resistance threshold and four-layer switch devices. Each of these devices can

2N2646

Abstract: unijunction transistor transistor put 2n6028 2n2646-47-low 2N6028 Unijunction D13K1 Programmable Unijunction Transistor PUT 2N6028 SCR 2N2646
Contextual Info: UNIJUNCTIONS COMPLEMENTARY— D5K SERIES The D5K offers the ultimate in unijunction stability and uniformity. Low frequency oscillators and timers can be built using the D5K with better than 1.0% accuracy over extended temperature ranges. The D5K has characteristics like

2N4983

Abstract: transistor 2N4983 general electric C22B CIRCUITS BY USING 2N6027 2n2646 equivalent GE C22B 2N4991 SBS thyristor 2N602B ge motor capacitor cross reference
Contextual Info: UNIJUNCTIONS, TRIGGERS AND SWITCHES S in c e th e intro du ctio n o f th e co m m ercial silic o n u n iju n c tio n tran sisto r in 1 9 5 6 , G eneral E le c tric has co n tin u e d d e­ velop ing an extensive lin e o f negative resistan ce th resho ld an d fo u r-lay er sw itch devices. Each o f th ese devices can

UJT 2N2646 specification

Abstract: UJT 2N2646 2n2646 ujt applications of ujt CIRCUITS BY USING 2N6027 applications of ujt with circuits 2N6028 scr firing circuit UJT triggering circuit unijunction application note D5K1
Contextual Info: UNIJUNCTIONS, TRIGGERS AND SWITCHES Since the introduction of the commercial silicon unijunction transistor in 1956, General Electric has continued de­ veloping an extensive line of negative resistance threshold and four-layer switch devices. Each of these devices can