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    SILICON UNILATERAL SWITCH Search Results

    SILICON UNILATERAL SWITCH Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TBAW56 Toshiba Electronic Devices & Storage Corporation Switching Diode, 80 V, 0.215 A, SOT23 Visit Toshiba Electronic Devices & Storage Corporation
    HN1D05FE Toshiba Electronic Devices & Storage Corporation Switching Diode, 400 V, 0.1 A, ES6 Visit Toshiba Electronic Devices & Storage Corporation
    74HC4053FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SPDT(1:2)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    MX0912B251Y Rochester Electronics LLC MX0912B251Y - NPN Silicon RF Power Transistor (Ampleon Die) Visit Rochester Electronics LLC Buy
    DG301AAA Rochester Electronics DG301AAA - CMOS Analog Switch Visit Rochester Electronics Buy

    SILICON UNILATERAL SWITCH Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    NTE6404

    Abstract: four-layer diode Silicon unilateral switch four layer diode SCR 30v
    Text: NTE6404 Silicon Unilateral Switch SUS Description: The NTE6404 is a silicon planar, monolithic integrated circuit having thyristor electrical characteristics closely approximating those of an “ideal” four layer diode. The device is designed to switch at 8 volts


    Original     		PDF NTE6404 NTE6404 175mA four-layer diode Silicon unilateral switch four layer diode SCR 30v

    Untitled

    Abstract: No abstract text available
    Text: ^Semi-Conductor ^Products., fine. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 2N4988 Silicon unilateral switch (SUS) in package TO-92 Pinouts: 1-Cathode, 2-Gate, 3-Anode Ratings rrm lT<rms>


    Original     		PDF 2N4988 175mA

    SUS 2N4987

    Abstract: 2N4987 Silicon unilateral switch
    Text: 2N4987 Silicon unilateral switch SUS in package TO-92 0.45max 0.7max 1 5.2 1.6 2 2.5 14.5 5.2 3 4.2 Pinouts: 1- Cathode, 2- Gate, 3- Anode Ratings Symbol Vrrm IT(rms) Igm IT(sm) P Parameter, units Limits Peak reverse voltage, V DC forward anode current, mA


    Original     		PDF 2N4987 45max 175mA SUS 2N4987 2N4987 Silicon unilateral switch

    2N4988

    Abstract: Silicon unilateral switch
    Text: 2N4988 Silicon unilateral switch SUS in package TO-92 0.45max 0.7max 1 5.2 1.6 2 2.5 14.5 5.2 3 4.2 Pinouts: 1- Cathode, 2- Gate, 3- Anode Ratings Symbol Vrrm IT(rms) Igm IT(sm) P Parameter, units Limits Peak reverse voltage, V DC forward anode current, mA


    Original     		PDF 2N4988 45max 175mA 2N4988 Silicon unilateral switch

    2N4990

    Abstract: Silicon unilateral switch 2N4990+SUS
    Text: 2N4990 Silicon unilateral switch SUS in package TO-92 0.45max 0.7max 1 5.2 1.6 2 2.5 14.5 5.2 3 4.2 Pinouts: 1- Cathode, 2- Gate, 3- Anode Ratings Symbol Vrrm IT(rms) Igm IT(sm) P Parameter, units Limits Peak reverse voltage, V DC forward anode current, mA


    Original     		PDF 2N4990 45max 175mA 2N4990 Silicon unilateral switch 2N4990+SUS

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors NP0A547 Silicon NPN epitaxial planar type Unit: mm For high-speed switching 0.12+0.03 -0.02 4 2 3 0.10 1 (0.35) (0.35) 1.00±0.05 (0.10) Display at No.1 lead • Basic Part Number


    Original     		PDF 2002/95/EC) NP0A547 2SC5829

    2SC5829

    Abstract: NP0A547
    Text: Composite Transistors NP0A547 Silicon NPN epitaxial planar type Unit: mm For high-speed switching 0.12+0.03 -0.02 4 2 3 0.10 1 0.35 (0.35) 1.00±0.05 (0.10) Display at No.1 lead • Basic Part Number • 2SC5829 x 2 1: Base (Tr1) 2: Emitter (Tr1) 3: Base (Tr2)


    Original     		PDF NP0A547 2SC5829 2SC5829 NP0A547

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors NP0A547 Silicon NPN epitaxial planar type Unit: mm For high-speed switching 0.12+0.03 -0.02 4 2 3 0.10 1 (0.35) (0.35) 1.00±0.05 (0.10) Display at No.1 lead • Basic Part Number


    Original     		PDF 2002/95/EC) NP0A547 2SC5829

    mps901

    Abstract: MRF901
    Text: MOTOROLA Order this document by MMBR901LT1/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon MMBR901LT1, T3 High-Frequency Transistor MPS901 MRF901 Designed primarily for use in high–gain, low–noise small–signal amplifiers for operation up to 2.5 GHz. Also usable in applications requiring fast switching


    Original     		PDF MMBR901LT1/D MMBR901LT1, MPS901 MRF901 MRF9011LT1 MRF9011LT1) MRF901

    2SC5829

    Abstract: NP0A547
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors NP0A547 Silicon NPN epitaxial planar type Unit: mm For high-speed switching 0.12+0.03 -0.02 4 2 1.00±0.05 3 0.10 1 (0.35) (0.35) 1.00±0.05 • 2SC5829 x 2 1: Base (Tr1)


    Original     		PDF 2002/95/EC) NP0A547 2SC5829 2SC5829 NP0A547

    2SC5829

    Abstract: NP0A547
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors NP0A547 Silicon NPN epitaxial planar type Unit: mm For high-speed switching 0.12+0.03 -0.02 4 1 2 0 to 0.02 3 0.10 M Di ain sc te on na tin nc ue e/ d (0.35) (0.35) 1.00±0.05


    Original     		PDF 2002/95/EC) NP0A547 2SC5829 NP0A547

    nte 6408

    Abstract: No abstract text available
    Text: SPECIAL DEVICES SILICON UNILATERAL SWITCH SUS NTE Type Number 6404 Case Style T098 Diagram Number 5 Forward Switching Voltage (Volts) Forward Current foA) Holding Current {mA) Power Dissipation (mW) DC Forward Anode Cunent (mA) Peak Recurrent Forward Current


    OCR Scan     		PDF NTE6404 NTE6407, NTE6408, NTE6411, NTE6412 nte 6408

    2N4990

    Abstract: 2N4987 SUS 2N4987 SUS GE 2N4987 2N4989 2N4988 Silicon unilateral switch 42322 DETJ3075001 2N4987-90
    Text: G E SOLID STATE □1 DE I 3fl750fll □□1ÛD11 3 | 0 1E 18011 3875081 G E SOLID STATE D . Unijunction Transistors and Switches 2N4987, 2N4988, 2N4989, 2N4990 T ' Z S - c ^ Silicon Unilateral Switch Applications: • SCR Triggers ■ Frequency Drivers ■ Ring Counters


    OCR Scan     		PDF 3fl750fll 2N4987, 2N4988 2N4989 2N4990 2N4987-90 2N4969 S2CS-42T47 J2N2647 001JJF 2N4987 SUS 2N4987 SUS GE 2N4987 Silicon unilateral switch 42322 DETJ3075001

    Silicon unilateral switch

    Abstract: DG1U SUS GE 2N4987 2N4987 equivalent 2N4987 GE 2N4988 2n498 2N4988 soli capacitors
    Text: "ÏÏÏ G E SOLID STATE DE|3fl750fll DGlflDll 3 | 0 1E 18011 387 5 08 1 G E S O L I D ST A T E D Unijunction Transistors and Switches 2N4987, 2N4988, 2N4989, 2N4990 T 'Z S -c ^ Silicon Unilateral Switch Applications: • SCR Triggers ■ Frequency Drivers


    OCR Scan     		PDF 3fl750fll 2N4987, 2N4988, 2N4989, 2N4990 2N4987-90 19--Overvoltage 3S750S1 Silicon unilateral switch DG1U SUS GE 2N4987 2N4987 equivalent 2N4987 GE 2N4988 2n498 2N4988 soli capacitors

    2N2646 equivalent

    Abstract: SUS-2N4989 2N4988 2N4991 3N81 3n84 D5K2 20 amp 800 volt triac 2N4983 EQUIVALENT 2N1671
    Text: UNIJUNCTIONS, TRIGGERS AND SWITCHES Since the introduction of the commercial silicon unijunction transistor in 1956, General Electric has continued de­ veloping an extensive line of negative resistance threshold and four-layer switch devices. Each of these devices can


    OCR Scan     		PDF 2N489-494â 2N2646-47â 2N4988 2N2647 022-/uF SUS-2N4989 2N4989 J2N2647 2N2646 equivalent SUS-2N4989 2N4988 2N4991 3N81 3n84 D5K2 20 amp 800 volt triac 2N4983 EQUIVALENT 2N1671

    mrf901

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon High-Frequency Ttansistor . . . designed primarily for use in high-gain, iow-noise, small-signal amplifiers. Also usable in applications requiring fast switching times. • High Current-Gain — Bandwidth Product —


    OCR Scan     		PDF MRF901 IS111^

    ujt transistor 2n2160

    Abstract: 2N2160 2N602B General electric SCR 2n2222 germanium UJT 2N2646 2N4891 2n2646 ujt UJT 43 Programmable Unijunction Transistor applications of ujt with circuits
    Text: UNIJUNCTIONS, TRIG G ERS AND SWITCHES Since the introduction of the commercial silicon unijunction transistor in 1956, General Electric has continued de­ veloping an extensive line of negative resistance threshold and four-layer switch devices. Each of these devices can


    OCR Scan     		PDF 2N489-494â 2N2646-47â ujt transistor 2n2160 2N2160 2N602B General electric SCR 2n2222 germanium UJT 2N2646 2N4891 2n2646 ujt UJT 43 Programmable Unijunction Transistor applications of ujt with circuits

    2N4985

    Abstract: 2N2646 cross reference 2N4984 2n2646 equivalent 2N2646 2N4983 2N4991 GE SCR cross reference 2n4992 EQUIVALENT 2N1671
    Text: UNIJUNCTIONS, TRIGGERS AND SWITCHES S in c e th e intro du ctio n o f th e co m m ercial silic o n u n iju n c tio n tran sisto r in 1 9 5 6 , G eneral E le c tric has co n tin u e d d e­ velop ing an extensive lin e o f negative resistan ce th resho ld an d fo u r-lay er sw itch devices. Each o f th ese devices can


    OCR Scan     		PDF 2N489-494â 2N2646-47â GEC32U 10kHz 2N4984 I2N2647 -2n4985 2N4985 2N2646 cross reference 2N4984 2n2646 equivalent 2N2646 2N4983 2N4991 GE SCR cross reference 2n4992 EQUIVALENT 2N1671

    2n2646 equivalent

    Abstract: SUS-2N4986 IN5059 3N84 2N4987-90 SUS 2N4987 2N4987 equivalent ge motor capacitor cross reference equivalent transistor of 2n6027 CIRCUITS BY USING 2N6027
    Text: UNIJUNCTIONS, TRIGGERS AND SWITCHES S in c e th e intro du ctio n o f th e co m m ercial silic o n u n iju n c tio n tran sisto r in 1 9 5 6 , G eneral E le c tric has co n tin u e d d e­ velop ing an extensive lin e o f negative resistan ce th resho ld an d fo u r-lay er sw itch devices. Each o f th ese devices can


    OCR Scan     		PDF 2N489-494â 2N2646-47â 2n4987 2N4990 2n4986 in5059 -2N4990 SUS-2N4986 2n2646 equivalent SUS-2N4986 IN5059 3N84 2N4987-90 SUS 2N4987 2N4987 equivalent ge motor capacitor cross reference equivalent transistor of 2n6027 CIRCUITS BY USING 2N6027

    2n2646 equivalent

    Abstract: 2N2646 triac phase control 2N602B 2N4991 EQUIVALENT 2N1671 four-layer diode SBS thyristor 2N4987 3n84
    Text: UNIJUNCTIONS, TRIGGERS AND SWITCHES Since the introduction of the commercial silicon unijunction transistor in 1956, General Electric has continued de­ veloping an extensive line of negative resistance threshold and four-layer switch devices. Each of these devices can


    OCR Scan     		PDF 2N489-494â 2N2646-47â 2n2646 equivalent 2N2646 triac phase control 2N602B 2N4991 EQUIVALENT 2N1671 four-layer diode SBS thyristor 2N4987 3n84

    UJT 2N2646 specification

    Abstract: UJT 2N2646 ratings UJT 2N2646 UJT 2N2646 operation 2n2646 ujt D5K2 ujt 2N6027 ujt transistor scr firing circuit UJT triggering circuit UJT 2N2646 RANGE
    Text: UNIJUNCTIONS, TRIGGERS AND SWITCHES Since the introduction of the commercial silicon unijunction transistor in 1956, General Electric has continued de­ veloping an extensive line of negative resistance threshold and four-layer switch devices. Each of these devices can


    OCR Scan     		PDF 2N489-494â 2N2646-47â 0047/iF UJT 2N2646 specification UJT 2N2646 ratings UJT 2N2646 UJT 2N2646 operation 2n2646 ujt D5K2 ujt 2N6027 ujt transistor scr firing circuit UJT triggering circuit UJT 2N2646 RANGE

    2N2646

    Abstract: unijunction transistor transistor put 2n6028 2n2646-47-low 2N6028 Unijunction D13K1 Programmable Unijunction Transistor PUT 2N6028 SCR 2N2646
    Text: UNIJUNCTIONS COMPLEMENTARY— D5K SERIES The D5K offers the ultimate in unijunction stability and uniformity. Low frequency oscillators and timers can be built using the D5K with better than 1.0% accuracy over extended temperature ranges. The D5K has characteristics like


    OCR Scan     		PDF 2N489-494â 2N2646-47â 2N2646 unijunction transistor transistor put 2n6028 2n2646-47-low 2N6028 Unijunction D13K1 Programmable Unijunction Transistor PUT 2N6028 SCR 2N2646

    2N4983

    Abstract: transistor 2N4983 general electric C22B CIRCUITS BY USING 2N6027 2n2646 equivalent GE C22B 2N4991 SBS thyristor 2N602B ge motor capacitor cross reference
    Text: UNIJUNCTIONS, TRIGGERS AND SWITCHES S in c e th e intro du ctio n o f th e co m m ercial silic o n u n iju n c tio n tran sisto r in 1 9 5 6 , G eneral E le c tric has co n tin u e d d e­ velop ing an extensive lin e o f negative resistan ce th resho ld an d fo u r-lay er sw itch devices. Each o f th ese devices can


    OCR Scan     		PDF 2N489-494â 2N2646-47â S-2N4983 2N4986 2N4986 2N4963 2N4983 ---15V transistor 2N4983 general electric C22B CIRCUITS BY USING 2N6027 2n2646 equivalent GE C22B 2N4991 SBS thyristor 2N602B ge motor capacitor cross reference

    UJT 2N2646 specification

    Abstract: UJT 2N2646 2n2646 ujt applications of ujt CIRCUITS BY USING 2N6027 applications of ujt with circuits 2N6028 scr firing circuit UJT triggering circuit unijunction application note D5K1
    Text: UNIJUNCTIONS, TRIGGERS AND SWITCHES Since the introduction of the commercial silicon unijunction transistor in 1956, General Electric has continued de­ veloping an extensive line of negative resistance threshold and four-layer switch devices. Each of these devices can


    OCR Scan     		PDF 2N489-494â 2N2646-47â 0047/iF 100kn UJT 2N2646 specification UJT 2N2646 2n2646 ujt applications of ujt CIRCUITS BY USING 2N6027 applications of ujt with circuits 2N6028 scr firing circuit UJT triggering circuit unijunction application note D5K1