ic 3A hfe 500
Abstract: MARKING SMD PNP TRANSISTOR FCX1149A TRANSISTOR SMD PNP 1A
Text: Transistors SMD Type PNP Silicon Power Switching Transistor FCX1149A Features 2W power dissipation. 20A peak pulse current. Excellent HFE characteristics up to 10 Amps. Extremely low saturation voltage E.g. 45mv Typ. Extremely low equivalent on-resistance.
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FCX1149A
-100mA
-10mA
-50mA,
50MHz
-40mA
ic 3A hfe 500
MARKING SMD PNP TRANSISTOR
FCX1149A
TRANSISTOR SMD PNP 1A
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FZT968
Abstract: DSA003719 10/04/10M
Text: SOT223 PNP SILICON PLANAR HIGH CURRENT HIGH PERFORMANCE POWER TRANSISTOR FZT968 ISSUE 3 OCTOBER 1995 FEATURES * Extremely low equivalent on-resistance; RCE(sat) 44mΩ at 5A * 6 Amps continuous current (Up to 20 Amps peak ) * High gain and very low saturation voltage
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OT223
FZT968
-10mA,
-500mA,
-100mA,
50MHz
-400mA
400mA,
FZT968
DSA003719
10/04/10M
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silicon transistor Vcbo 800 Vceo 1000 Ic 20A
Abstract: FCX1047A FCX1147A DSA003683
Text: SOT89 NPN SILICON POWER SWITCHING TRANSISTOR FCX1047A ISSSUE 2 - DECEMBER 1998 FEATURES * 2W POWER DISSIPATION * * * * 20A Peak Pulse Current Excellent HFE Characteristics up to 20 Amps Extremely Low Saturation Voltage E.g. 25mv Typ. Extremely Low Equivalent On-resistance;
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FCX1047A
FCX1147A
100ms
silicon transistor Vcbo 800 Vceo 1000 Ic 20A
FCX1047A
FCX1147A
DSA003683
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ZTX968
Abstract: DSA003780
Text: PNP SILICON PLANAR MEDIUM POWER HIGH CURRENT TRANSISTOR ZTX968 ELECTRICAL CHARACTERISTICS at Tamb = 25°C PARAMETER SYMBOL MIN. TYP. Static Forward Current Transfer Ratio hFE 300 300 200 150 450 450 300 240 50 Transition Frequency fT 80 Output Capacitance
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ZTX968
-10mA,
-500mA,
-400mA
400mA,
-100mA,
50MHz
100ms
ZTX968
DSA003780
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD MJE13009-K NPN SILICON TRANSISTOR SWITCHMODE SERIES NPN SILICON POWER TRANSISTORS DESCRIPTION The MJE13009-K is designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V switch mode applications
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MJE13009-K
MJE13009-K
QW-R223-007
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MJE13009
Abstract: 2N2222 transistor output curve mje13009l mje13009 CIRCUIT 2N2222 SOA MJE13009G tr 2n2222 MJE13009L-TF3-T
Text: UNISONIC TECHNOLOGIES CO., LTD MJE13009 NPN SILICON TRANSISTOR SWITCHMODE SERIES NPN SILICON POWER TRANSISTORS DESCRIPTION The MJE13009 is designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V switch mode applications such
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MJE13009
MJE13009
QW-R203-024
2N2222 transistor output curve
mje13009l
mje13009 CIRCUIT
2N2222 SOA
MJE13009G
tr 2n2222
MJE13009L-TF3-T
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD MJE13009-P NPN SILICON TRANSISTOR SWITCHMODE SERIES NPN SILICON POWER TRANSISTORS DESCRIPTION The MJE13009-P is designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V switch mode applications
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MJE13009-P
MJE13009-P
QW-R223-008,
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RGK 20/1
Abstract: sanken snr sanken power transistor 2SA1216 sac 187 triac motor driver full bridge 10A 2SC3855 SANKEN 2SC3909 Sanken Schottky Diode Mi 15 2SA1494 SANKEN bridge rectifier ic
Text: DISCRETE DEVICES AMS-174 INTERIM ISSUE Subject to change without notice May 9, 1997 DISCRETE TRANSISTORS, DIODES, and ARRAYS Index to Sanken Electronic Components . page 2 NPN Power Transistors . 4
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AMS-174
RGK 20/1
sanken snr
sanken power transistor 2SA1216
sac 187 triac
motor driver full bridge 10A
2SC3855 SANKEN
2SC3909
Sanken Schottky Diode Mi 15
2SA1494 SANKEN
bridge rectifier ic
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FCX1149A
Abstract: DSA003683
Text: SOT89 PNP SILICON POWER SWITCHING TRANSISTOR FCX1149A ISSSUE 1 - SEPTEMBER 1999 FEATURES * 2W POWER DISSIPATION * * * * 20A Peak Pulse Current Excellent HFE Characteristics up to 10 Amps Extremely Low Saturation Voltage E.g. 45mv Typ. Extremely Low Equivalent On-resistance;
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FCX1149A
100ms
100us
FCX1149A
DSA003683
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Untitled
Abstract: No abstract text available
Text: SOT89 PNP SILICON POWER SWITCHING TRANSISTOR FCX1149A ISSSUE 1 - SEPTEMBER 1999 FEATURES * 2W POWER DISSIPATION * * * * 20A Peak Pulse Current Excellent HFE Characteristics up to 10 Amps Extremely Low Saturation Voltage E.g. 45mv Typ. Extremely Low Equivalent On-resistance;
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FCX1149A
100ms
100us
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2sc3997
Abstract: ITR06217 ITR06218 ITR06219 ITR06220 ITR06221 2sc3997 transistor
Text: Ordering number:ENN2771 NPN Triple Diffused Planar Silicon Transistor 2SC3997 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions • High speed tf=100ns typ . · High breakdown voltage (VCBO=1500V). · High reliability (adoption of HVP process).
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ENN2771
2SC3997
100ns
2048B
2SC3997]
2sc3997
ITR06217
ITR06218
ITR06219
ITR06220
ITR06221
2sc3997 transistor
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2sc3997
Abstract: No abstract text available
Text: Ordering number:ENN2771 NPN Triple Diffused Planar Silicon Transistor 2SC3997 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions • High speed tf=100ns typ . · High breakdown voltage (VCBO=1500V). · High reliability (adoption of HVP process).
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ENN2771
2SC3997
100ns
2048B
2SC3997]
2sc3997
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2SC3998
Abstract: transistor 2SC3998
Text: Ordering number:ENN2732 NPN Triple Diffused Planar Silicon Transistor 2SC3998 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions • High speed tf=100ns typ . · High breakdown voltage (VCBO=1500V). · High reliability (adoption of HVP process).
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ENN2732
2SC3998
100ns
2048B
2SC3998]
2SC3998
transistor 2SC3998
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tip122 tip127 audio amp schematic
Abstract: mje521 equivalent BJT small signal low power BD139 MJ15003 300 watts amplifier 2N3773 pinout transistor mj11032 equivalent MJ11028 transistor equivalent 2n3055 IC 2N3773 audio amplifier diagram 2n222 TRANSISTOR use as audio amplifier
Text: DL111/D Rev. 8, July-2001 Bipolar Power Transistor Data Bipolar Power Transistor Data DL111/D Rev. 8, Jul–2001 SCILLC, 2001 Previous Edition 1995 “All Rights Reserved’’ Grafoil is a registered Trademark of Union Carbide. Kon–Dux and Rubber–Duc are trademarks of Aavid Thermal Technologies, Inc.
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DL111/D
July-2001
r14525
tip122 tip127 audio amp schematic
mje521 equivalent
BJT small signal low power BD139
MJ15003 300 watts amplifier
2N3773 pinout
transistor mj11032 equivalent
MJ11028 transistor equivalent
2n3055 IC
2N3773 audio amplifier diagram
2n222 TRANSISTOR use as audio amplifier
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2SC3153
Abstract: X0131
Text: Ordering number:ENN1072D NPN Triple Diffused Planar Silicon Transistor 2SC3153 800V/6A Switching Regulator Applications Features Package Dimensions • High breakdown voltage VCBO≥900V . · High-speed switching. · Wide ASO. unit:mm 2022A [2SC3153] 15.6
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ENN1072D
2SC3153
00V/6A
VCBO900V)
2SC3153]
PW300
Cycle10%
2SC3153
X0131
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2SC5303
Abstract: TA-2322
Text: Ordering number:ENN6177 NPN Triple Diffused Planar Silicon Transistor 2SC5303 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions • High speed tf=100ns typ . · High breakdown voltage (VCBO=1500V). · High reliability (Adoption of HVP process).
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ENN6177
2SC5303
100ns
2SC5303]
2SC5303
TA-2322
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2SC5444
Abstract: No abstract text available
Text: Ordering number:EN6102 NPN Triple Diffused Planar Silicon Transistor 2SC5444 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions • High speed tf=100ns typ . · High breakdown voltage (VCBO=1500V). · High reliability (Adoption of HVP process).
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EN6102
2SC5444
100ns
2048B
2SC5444]
2SC5444
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2SC5683
Abstract: No abstract text available
Text: Ordering number : ENN6653A 2SC5683 NPN Triple Diffused Planar Silicon Transistor 2SC5683 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features • • • • Package Dimensions High speed. High breakdown voltage VCBO=1500V .
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ENN6653A
2SC5683
2SC5683]
2SC5683
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IT02410
Abstract: 2SC5723 A1030 40c208
Text: Ordering number : ENN7398 2SC5723 NPN Triple Diffused Planar Silicon Transistor 2SC5723 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features • • • High speed. High breakdown voltage VCBO=1500V . High reliability(Adoption of HVP process).
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ENN7398
2SC5723
2048B
2SC5723]
IT02410
2SC5723
A1030
40c208
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2sc5682
Abstract: TA-2891
Text: Ordering number : ENN6608 2SC5682 NPN Triple Diffused Planar Silicon Transistor 2SC5682 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features • • • • Package Dimensions High speed. High breakdown voltage VCBO=1500V . High reliability(Adoption of HVP process).
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ENN6608
2SC5682
2SC5682]
2sc5682
TA-2891
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2SC5300
Abstract: 54164 ITR08095 ITR08096 ITR08097 ITR08098 IC 54161
Text: Ordering number:ENN5416A NPN Triple Diffused Planar Silicon Transistor 2SC5300 Ultrahigh-Definition Color Display Horizontal Deflection Output Applications Features Package Dimensions • High speed tf=100ns typ . · High breakdown voltage (VCBO=1500V). · High reliability (Adoption of HVP process).
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ENN5416A
2SC5300
100ns
2039D
2SC5300]
2SC5300
54164
ITR08095
ITR08096
ITR08097
ITR08098
IC 54161
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70H40
Abstract: transistor equivalent d2012 2SC734 equivalent 3sk73 equivalent 2sb502 2sa776 bl 2sc2075 equivalent 2sk For Low Noise Audio Amplifier Applications 2sa970 BL equivalent 2sa776 gr
Text: AUDIO SMALL SIGNAL AMP Package USM Super M ini M ini T O -9 2 A p p lic a tio n • * « m • 2SA1162 2SA1163 General purpose 2SC1815 2SA1015 2SC2458 2SC2459 2SA1048 2SA1049 2SC2712 2SC2713 General purpose L o w Noise 2SC1815 2SA1015© 2SC2458© 2SA2048©
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2SA1162
2SA1163
2SC1815
2SA1015
2SC2458
2SC2459
2SA1048
2SA1049
2SC2712
2SC2713
70H40
transistor equivalent d2012
2SC734 equivalent
3sk73 equivalent
2sb502
2sa776 bl
2sc2075 equivalent
2sk For Low Noise Audio Amplifier Applications
2sa970 BL equivalent
2sa776 gr
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Untitled
Abstract: No abstract text available
Text: Transistors High-current gain Medium Power Transistor 20V, 0.5A 2SD2114K/2SD2144S •Features 1) High DC current gain. hFE = 1200 (Typ.) 2) High emitter-base voltage. V ebo = 1 2 V (Min.) 3) ^External dimensions (Units: mm) 2SD2114K 2.9±0.2 11 11-+ 00.1
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2SD2114K/2SD2144S
2SD2114K
500mA/20A)
SC-59
2SD2144S
Emit100
100mV
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Untitled
Abstract: No abstract text available
Text: qg TOSHIBA ÍDISCRETE/OPTOJ9097250 TOSHIBA TOSHIBA D E ] ^ 0 ^ 7 5 5 0 DD]jb3D7 H | 90D CDIS C R E T E /OPTO SEMICONDUCTOR 16307 DT-33-3S’ TOSHIBA GTR MODULE •MG-20Q6EK1 TECHNICAL DATA SILICON NPN TRIPLE DIFFUSED TYPE HIGH POWER SWITCHING APPLICATIONS.
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DISCRETE/OPTOJ9097250
DT-33-3Sâ
MG-20Q6EK1
hFEc100
MG20Q6EK1-1
TCH72SG
DDlb30Ã
iG20Q6F
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