NE5520379A
Abstract: NE5520379A-T1 NE5520379A-T1A VP215 ldmos nec
Text: DATA SHEET SILICON POWER MOS FET NE5520379A 3.2 V OPERATION SILICON RF POWER LDMOS FET FOR GSM/DCS DUAL-BAND PHONE TRANSMISSION AMPLIFIERS DESCRIPTION The NE5520379A is an N-channel silicon power MOS FET specially designed as the transmission power amplifier
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NE5520379A
NE5520379A
NE5520379A-T1
NE5520379A-T1A
VP215
ldmos nec
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d1117
Abstract: TRANSISTOR 2202 BL 2SA1988 C10535E C10943X MEI-1202 MP-88
Text: DATA SHEET Silicon Power Transistor 2SA1988 PNP SILICON TRANSISTOR POWER AMPLIFIER INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS The 2SA1988 is PNP Silicon Power Transistor that designed for audio frequency power amplifier. 1.0 4 20.5MAX. 5.0 • High Voltage VCEO = −200 V
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2SA1988
2SA1988
MP-88
d1117
TRANSISTOR 2202 BL
C10535E
C10943X
MEI-1202
MP-88
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Untitled
Abstract: No abstract text available
Text: DATA SHEET SILICON POWER MOS FET NE5520379A 3.2 V OPERATION SILICON RF POWER LD-MOS FET FOR GSM/DCS DUAL-BAND PHONE TRANSMISSION AMPLIFIERS DESCRIPTION The NE5520379A is an N-channel silicon power MOS FET specially designed as the transmission power amplifier
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NE5520379A
NE5520379A
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NE5510379A
Abstract: NE5510379A-T1
Text: PRELIMINARY DATA SHEET SILICON POWER MOS FET NE5510379A 4.8 V OPERATION SILICON RF POWER LD-MOS FET FOR 900 MHz 3 W TRANSMISSION AMPLIFIERS DESCRIPTION The NE5510379A is an N-channel silicon power MOS FET specially designed as the transmission power amplifier
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NE5510379A
NE5510379A
NE5510379A-T1
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Untitled
Abstract: No abstract text available
Text: DATA SHEET SILICON POWER MOS FET NE5520379A 3.2 V OPERATION SILICON RF POWER LD-MOS FET FOR GSM/DCS DUAL-BAND PHONE TRANSMISSION AMPLIFIERS DESCRIPTION The NE5520379A is an N-channel silicon power MOS FET specially designed as the transmission power amplifier
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NE5520379A
NE5520379A
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NE5510279A
Abstract: NE5510279A-T1
Text: PRELIMINARY DATA SHEET SILICON POWER MOS FET NE5510279A 4.8 V OPERATION SILICON RF POWER LD-MOS FET FOR 1.8 GHz 2 W TRANSMISSION AMPLIFIERS DESCRIPTION The NE5510279A is an N-channel silicon power MOS FET specially designed as the transmission power amplifier
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NE5510279A
NE5510279A
NE5510279A-T1
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NE5520379A
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET SILICON POWER MOS FET NE5520379A 3.2 V OPERATION SILICON RF POWER LD-MOS FET FOR GSM/DCS DUAL-BAND PHONE TRANSMISSION AMPLIFIERS DESCRIPTION The NE5520379A is an N-channel silicon power MOS FET specially designed as the transmission power amplifier
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NE5520379A
NE5520379A
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nec 1678
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET SILICON POWER MOS FET NE5500479A 3.5 V OPERATION SILICON RF POWER LD-MOS FET FOR 900 MHz 1 W TRANSMISSION AMPLIFIERS DESCRIPTION The NE5500479A is an N-channel silicon power MOS FET specially designed as the transmission power amplifier
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NE5500479A
NE5500479A
nec 1678
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d1117
Abstract: D111 2SA1988 MP-88
Text: DATA SHEET Silicon Transistor 2SA1988 PNP SILICON TRANSISTOR POWER AMPLIFIER DESCRIPTION The 2SA1988 is PNP Silicon Power Transistor that designed for audio frequency power amplifier. FEATURES • High Voltage VCEO = –200 V • DC Current Gain hFE = 70 to 200
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2SA1988
2SA1988
MP-88
d1117
D111
MP-88
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NE5510179A
Abstract: NE5510179A-T1
Text: PRELIMINARY DATA SHEET SILICON POWER MOS FET NE5510179A 3.6 V OPERATION SILICON RF POWER LD-MOS FET FOR 1.9 GHz 1 W TRANSMISSION AMPLIFIERS DESCRIPTION The NE5510179A is an N-channel silicon power MOS FET specially designed as the transmission driver amplifier
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NE5510179A
NE5510179A-T1
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NE5500179A
Abstract: ldmos nec
Text: PRELIMINARY DATA SHEET SILICON POWER MOS FET NE5500179A 4.8 V OPERATION SILICON RF POWER LD-MOS FET FOR 1.9 GHz 1 W TRANSMISSION AMPLIFIERS DESCRIPTION The NE5500179A is an N-channel silicon power MOS FET specially designed as the transmission driver amplifier
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NE5500179A
NE5500179A
ldmos nec
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NE5500234
Abstract: nec RF package SOT89 nec 2501 marking v2 FRS transceiver NE5500234-T1-AZ
Text: DATA SHEET SILICON POWER MOS FET NE5500234 N-CHANNEL SILICON POWER MOS FET POWER AMPLIFIER FOR DCS1800/PCS1900 HANDSETS DESCRIPTION The NE5500234 is an N-channel silicon power MOS FET specially designed as the transmission power amplifier for DCS1800 and PCS1900 handsets. Dies are manufactured using our NEWMOS technology our 0.6 m WSi gate
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NE5500234
DCS1800/PCS1900
NE5500234
DCS1800
PCS1900
OT-89
nec RF package SOT89
nec 2501
marking v2
FRS transceiver
NE5500234-T1-AZ
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NE5500434
Abstract: nec RF package SOT89 nec 2501
Text: DATA SHEET SILICON POWER MOS FET NE5500434 N-CHANNEL SILICON POWER MOS FET POWER AMPLIFIER FOR GSM CLASS 4 HANDSETS DESCRIPTION The NE5500434 is an N-channel silicon power MOS FET specially designed as the transmission power amplifier for GSM class 4 handsets. Dies are manufactured using our NEWMOS technology our 0.6 m WSi gate lateral MOS
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NE5500434
NE5500434
OT-89
nec RF package SOT89
nec 2501
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nec 2501
Abstract: nec RF package SOT89 NE5500134 nec marking power amplifier NEC MARKING CODE code marking NEC date code marking NEC FET SOT-89 N-Channel HS350 sot89 fet
Text: DATA SHEET SILICON POWER MOS FET NE5500134 N-CHANNEL SILICON POWER MOS FET POWER AMPLIFIER FOR 0.8 TO 2.0 GHz CELLULAR HANDSETS DESCRIPTION The NE5500134 is an N-channel silicon power MOS FET specially designed as the transmission power amplifier for 0.8 to 2.0 GHz cellular handsets. Dies are manufactured using our NEWMOS technology our 0.6 m WSi gate
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NE5500134
NE5500134
OT-89
nec 2501
nec RF package SOT89
nec marking power amplifier
NEC MARKING CODE
code marking NEC
date code marking NEC
FET SOT-89 N-Channel
HS350
sot89 fet
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2N5153 JANTX
Abstract: 2N5153
Text: 2N5153 Silicon PNP Transistor Data Sheet Description Applications SEMICOA Corporation offers: • High-speed power switching • Low power • PNP silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N5153J • JANTX level (2N5153JX)
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2N5153
MIL-PRF-19500
2N5153J)
2N5153JX)
2N5153JV)
2N5153JS)
2N5153JSR)
2N5153JSF)
MIL-STD-750
MIL-PRF-19500/545
2N5153 JANTX
2N5153
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Untitled
Abstract: No abstract text available
Text: 2N5151L Silicon PNP Transistor Data Sheet Description Applications SEMICOA Corporation offers: • High-speed power switching • Low power • PNP silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N5151LJ • JANTX level (2N5151LJX)
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2N5151L
MIL-PRF-19500
2N5151LJ)
2N5151LJX)
2N5151LJV)
2N5151LJS)
2N5151LJSR)
2N5151LJSF)
MIL-STD-750
MIL-PRF-19500/545
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Untitled
Abstract: No abstract text available
Text: 2N5003 Silicon PNP Transistor Data Sheet Description Applications • High-speed power-switching • Power Transistor • PNP silicon transistor SEMICOA Corporation offers: • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N5003J • JANTX level (2N5003JX)
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2N5003
MIL-PRF-19500
2N5003J)
2N5003JX)
2N5003JV)
MIL-STD-750
MIL-PRF-19500/535
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Untitled
Abstract: No abstract text available
Text: 2N5153L Silicon PNP Transistor Data Sheet Description Applications SEMICOA Corporation offers: • High-speed power switching • Low power • PNP silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N5153LJ • JANTX level (2N5153LJX)
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2N5153L
MIL-PRF-19500
2N5153LJ)
2N5153LJX)
2N5153LJV)
2N5153LJS)
2N5153LJSR)
2N5153LJSF)
MIL-STD-750
MIL-PRF-19500/545
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Untitled
Abstract: No abstract text available
Text: 2N3996 Silicon NPN Transistor Data Sheet Description Applications SEMICOA Corporation offers: • High-speed power switching • Power transistor • NPN silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N3996J • JANTX level (2N3996JX)
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2N3996
MIL-PRF-19500
2N3996J)
2N3996JX)
2N3996JV)
MIL-STD-750
MIL-PRF-19500/374
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Untitled
Abstract: No abstract text available
Text: 2N3999 Silicon NPN Transistor Data Sheet Description Applications SEMICOA Corporation offers: • High-speed power switching • Power transistor • NPN silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N3999J • JANTX level (2N3999JX)
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2N3999
MIL-PRF-19500
2N3999J)
2N3999JX)
2N3999JV)
MIL-STD-750
MIL-PRF-19500/374
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2N5002
Abstract: No abstract text available
Text: 2N5002 Silicon NPN Transistor Data Sheet Description Applications • High-speed power-switching • Power Transistor • NPN silicon transistor SEMICOA Corporation offers: • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N5002J • JANTX level (2N5002JX)
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2N5002
MIL-PRF-19500
2N5002J)
2N5002JX)
2N5002JV)
MIL-STD-750
MIL-PRF-19500/534
2N5002
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Untitled
Abstract: No abstract text available
Text: 2N3998 Silicon NPN Transistor Data Sheet Description Applications SEMICOA Corporation offers: • High-speed power switching • Power transistor • NPN silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N3998J • JANTX level (2N3998JX)
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2N3998
MIL-PRF-19500
2N3998J)
2N3998JX)
2N3998JV)
MIL-STD-750
MIL-PRF-19500/374
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NE552R479A-T1A
Abstract: VP215 GSM1900 NE552R479A NE552R479A-T1 ldmos nec
Text: DATA SHEET SILICON POWER MOS FET NE552R479A 3.0 V OPERATION SILICON RF POWER LDMOS FET FOR 2.45 GHz 0.4 W TRANSMISSION AMPLIFIERS DESCRIPTION The NE552R479A is an N-channel silicon power laterally diffused MOS FET specially designed as the transmission power amplifier for 3.0 V WLL products. Dies are manufactured using our NEWMOS2 technology our
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NE552R479A
NE552R479A
NE552R479A-T1A
VP215
GSM1900
NE552R479A-T1
ldmos nec
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2SC2586
Abstract: No abstract text available
Text: DATA SHEET SILICON POWER TRANSISTOR 2SC2586 NPN SILICON EPITAXIAL TRANSISTOR FOR UHF-BAND POWER AMPLIFIER INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS in m illim eters The 2SC2586 is an NPN silicon epitaxial transistor designed for UHF-band medium power amplifiers.
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2SC2586
2SC2586
P11693EJ1V0DS00
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