1N831
Abstract: 1N832A "Point Contact Diodes" Silicon Point Contact Mixer Diodes
Text: Point Contact Diodes Point Contact Diodes: 1N Series X Band Point Contact Mixer Diodes Description This MicroMetrics 1N series of Point Contact Mixer diodes is designed for applications through X-Band. These diodes employ epitaxial silicon optimized for low noise figure and
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1N831
1N831A
1N831B
1N831C
1N832
1N832A
1N832B
1N832C
1N831
1N832A
"Point Contact Diodes"
Silicon Point Contact Mixer Diodes
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gold metal detectors
Abstract: IN5711 in5711 equivalent diode ring mixer PN Junction Diode oscillator Metal Detector doppler radar p-n junction diode digital metal detector Silicon Point Contact Mixer Diodes
Text: Schottky Barrier Diodes Characteristics A Schottky barrier diode contains a metal-semiconductor barrier formed by deposition of a metal layer on a semiconductor. The resulting non-linear diode is similar to point contact diodes and p-n junction diodes. The
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AN988,
26/IB
gold metal detectors
IN5711
in5711 equivalent
diode ring mixer
PN Junction Diode oscillator
Metal Detector
doppler radar
p-n junction diode
digital metal detector
Silicon Point Contact Mixer Diodes
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CS100
Abstract: cs-100 1N415C 1N23 diode 1N23B 1N23 1N21E 1N416C cs-101 1N21C
Text: Point Contact Diodes: 1N Series S - X Band Point Contact Mixer Diodes Description This MicroMetrics 1N series of Point Contact Mixer diodes is designed for applications from S-Band through XBand. Each device in this series is in a cartridge package specially designed
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CS100
CS101
CS100
cs-100
1N415C
1N23 diode
1N23B
1N23
1N21E
1N416C
cs-101
1N21C
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1N23 diode
Abstract: 1N23C 1N23B 1N21C 1N23A case cs101 1N415C diode 1N23WG 1N415H CS100
Text: Point Contact Diodes Point Contact Diodes: 1N Series S - X Band Point Contact Mixer Diodes Description This MicroMetrics 1N series of Point Contact Mixer diodes is designed for applications from S-Band through XBand. Each device in this series is in a cartridge package specially designed
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CS100
CS101
1N23 diode
1N23C
1N23B
1N21C
1N23A
case cs101
1N415C diode
1N23WG
1N415H
CS100
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1N23 diode
Abstract: 1N23 1N53AR 1n3747 1N1132 1N53R 1N415C 1n415 1N26 1N23 ALPHA
Text: ALPHA IN»/ SEMICONDUCTOR MAE D • 0SAS443 00011b3 447 ■ ALP Silicon Point Contact Mixer Diodes Description Alpha’s point contact mixer diodes are designed for applications through Ka-band 40 GHz . These diodes employ epitaxial silicon optimized for low noise figure
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1N21
Abstract: 1N1132 1N23 1N415 Microwave detector diodes 1n4603 1N416 "Point Contact Mixer" 1N3745 1n26
Text: Silicon Point Contact Mixer and Detector Diodes Quick Reference Chart Description This selection chart identifies the standard line of Alpha microwave point contact mixer and detector di odes by basic construction, package style and frequency band. Type
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1N23W
1N415
DMA6498
1N3747W
1N3746
1N3745
DMA6497
DMA5223
DMA5278
DMA5253
1N21
1N1132
1N23
Microwave detector diodes
1n4603
1N416
"Point Contact Mixer"
1n26
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1N23 diode
Abstract: 1N53AR 1N26A diode Silicon Point Contact Mixer Diodes 1N415 1N832A N178 kaba 1N23WG 1N26BR
Text: EBAlpha Silicon Point Contact Mixer Diodes 1N2XX, 1N3205,1N25XX, 1N78X, DMA649X-XXX Series Features • High Burnout Resistance ■ Low Noise Figure, even in the Starved LO Mode ■ Hermetically Sealed Description Alpha’s point contact mixer diodes are designed for
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1N3205
1N25XX,
1N78X,
DMA649X-XXX
1N23 diode
1N53AR
1N26A diode
Silicon Point Contact Mixer Diodes
1N415
1N832A
N178
kaba
1N23WG
1N26BR
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1N23C diode
Abstract: DIODE ku 1490 1N25 diode 1N26A diode DO-37 DO-23 1N415C 1N4294 1N4603R 1N26BR
Text: SILICON POINT CON TACT MIXER DIODES ASI Point Contact M ixer Diodes are designed for applications from UHF through 26 GHz. The overall noise figure is expressed by the follow ing relationship: NF0 = Lc NR0 + NF if -1 NF„ = overall receiver noise figure
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DO-22,
DO-23
DO-37
ardN21H
1N21HR
1N150
1N160
1N150R
1N160R
1N23C
1N23C diode
DIODE ku 1490
1N25 diode
1N26A diode
1N415C
1N4294
1N4603R
1N26BR
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1N23C
Abstract: 1N23C diode 1N23 Diode Holder 1N23 diode CI 3060 Silicon Point Contact Mixer Diodes 1n23we 1N21E 1N23CR 1N1132
Text: 0585443 ALPHA IND/ SEMICONDUCTOR "El D lf| 0SÛS443 Q0DD3fiti E 03E 00386 D T -C>7 _¿> J Silicon Point Contact Mixer Diodes Features • High Burnout Resistance • Low Noise Figure, even in the Starved L.O. Mode • Hermetically Sealed The matching criteria for mixer diodes are as follows:
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1N23 diode
Abstract: 1N78 diode 1N23WGMR 1N26A diode 1n21we 1N26B ka2to 1N415 DMA4148-042 1n23 jan
Text: Silicon Point Contact Mixer Diodes Features • ■ ■ High Burnout Resistance Low Noise Figure, even in the Starved L.O. Mode Hermetically Sealed * \ / \ Description These specifications allow the noise figure of the re ceiver to deteriorate no greater than 0.1 dB due to local
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Silicon Point Contact Mixer Diodes
Abstract: Mixer Silicon Detector
Text: Section 4 Receiving Diodes GaAs Schottky Barrier Mixer D io d e s . 4-2 GaAs Beamless Mixer Diodes .
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radar detector 10.5 ghz local oscillator
Abstract: Silicon Point Contact Mixer Diodes dmc5910
Text: Silicon Bonded and Pressure Contact Schottky Barrier Mixer Diodes Features Bonded Junctions for Reliability Low 1/f Noise Low Turn On for Starved L.O. Applications Planar Passivated Dice for Reliability Uniform Characteristics Description Applications Alpha’s silicon Schottky barrier mixer diodes are de
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40GHz
MF5078-024
DMF5078-025
DMF4039-024
DMF4039-025
DMF5078-018
DMF5078-019
DMF4039-018
DMF4039-019
DMF5078-012
radar detector 10.5 ghz local oscillator
Silicon Point Contact Mixer Diodes
dmc5910
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HSMS0001
Abstract: Silicon Point Contact Mixer Diodes hsch 3486 zero bias schottky diode
Text: C haracteristics o f Schottky Barrier D iodes A Schottky barrier diode contains a metal-semiconductor barrier formed by deposition of a metal layer on a semiconduc tor. The resulting non-linear diode is similar to point contact diodes and p-n junction diodes.
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26/Ig
HSMS0001
Silicon Point Contact Mixer Diodes
hsch 3486 zero bias schottky diode
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Untitled
Abstract: No abstract text available
Text: ALPHA I'ND/ SEMICONDUC TOR 33E D • 0S65H43 DDDD7S3 3 * A L P Silicon Bonded and Pressure Contact Schottky Barrier Mixer Diodes -v-o-7-0-1 Features ■ ■ ■ ■ ■ Bonded Junctions for Reliability Low 1/f Noise Low Turn On for Starved L.O. Applications
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0S65H43
P-041
P-076
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Untitled
Abstract: No abstract text available
Text: GEC PL ES S E Y S } M I l> N I I 1 C 1 O K S DC1571/73 SILICON SCHOTTKY S-BAND MICROSTRIP LOW DRIVE MIXER DIODES DESCRIPTION APPLICATIONS The DC1570 series are medium barrier height silicon mixer diodes intended primarily for operation as low drive mixer
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DC1571/73
DC1570
200mV
DC1571
DC1573
150pA
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IN5711
Abstract: Silicon Point Contact Mixer Diodes Microwave zero bias detector diodes
Text: W O ñ H EW LETT' 1"KM PACKARD Schottky Barrier Diodes C haracteristics A Schottky barrier diode contains a metal-semiconductor barrier formed by deposition of a metal layer on a semiconductor. The resulting non-linear diode is similar to point contact diodes
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AN988,
26/Th
IN5711
Silicon Point Contact Mixer Diodes
Microwave zero bias detector diodes
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Untitled
Abstract: No abstract text available
Text: P S tffli GEC PLES S EY DC1570/72 SILICON SCHOTTKY S-BAND WAVEGUIDE LOW DRIVE MIXER DIODES DESCRIPTION APPLICATIONS The DC1570 series are medium barrier height silicon mixer diodes Intended primarily for operation as low drive mixer diodes in systems where available local oscillator power is
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DC1570/72
DC1570
300mW
200mV
DC1570
DC1572
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Untitled
Abstract: No abstract text available
Text: 37bflSS2 OGIÔHfiû MSI « P L S B Si GEC PLE SS EY SEMICONDUCTORS DC1575/78 SILICON SCHOTTKY X-BAND MICROSTRIP LOW DRIVE MIXER DIODES DESCRIPTION APPLICATIONS The DC1570 series are medium barrier height silicon mixer diodes intended primarily for operation as low drive mixer
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37bflSS2
DC1575/78
DC1570
300mW
200mV
DC1575
DC1578
150jiA
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Untitled
Abstract: No abstract text available
Text: 37bñS22 ÜGläMäT 3TÖ « P L S B 3ü GEC P L E S S E Y S E M I C O N D U C T O R S DC1570/72 SILICON SCHOTTKY S-BAND WAVEGUIDE LOW DRIVE MIXER DIODES DESCRIPTION APPLICATIONS The DC1570 series are medium barrier height silicon mixer diodes intended primarily for operation as low drive mixer
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DC1570/72
DC1570
200mV
10jiA
DC1570
DC1572
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Untitled
Abstract: No abstract text available
Text: 37bñSES ODIAMMO GOT * P L S B Si GE C P L E S S E Y SEMICONDUCTORS DC1574/76/77 SILICON SCHOTTKY X-BAND WAVEGUIDE LOW DRIVE MIXER DIODES DESCRIPTION APPLICATIONS The DC1570 series are medium barrier height silicon mixer diodes intended primarily for operation as low drive mixer
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DC1574/76/77
DC1570
300mW
DC1574
DC1577
DC1576
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Untitled
Abstract: No abstract text available
Text: GE C P L E S S E Y S 1 M 1 i O N I U t: I O R s DC1575/78 SILICON SCHOTTKY X-BAND MICROSTRIP LOW DRIVE MIXER DIODES DESCRIPTION APPLICATIONS The DC1570 series are medium barrier height silicon mixer diodes intended primarily for operation as low drive mixer
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DC1575/78
DC1570
300mW
200mV
DC1575
DC1578
150pA
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1n415c
Abstract: 1N23G 1N21C 1N21D 1N21E 1N21F 1N21G 1N21WE 1N416G 1N416C
Text: Point Con tact Diodes: 1 N Series S - X Band Point Contact Mixer Diodes Description This MicroM etrics 1N series of Point Contact Mixer diodes is designed for applications from S-Band through XBand. Each device in this series is in a cartridge package specially designed
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CS100
1N23F
1N23G
1N23WG
1N23H
CS101
1N415C
1n415c
1N23G
1N21C
1N21D
1N21E
1N21F
1N21G
1N21WE
1N416G
1N416C
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Untitled
Abstract: No abstract text available
Text: 37bñS2B OOlflMfl? SIS « P L S B 5Ë GECPLESSEY S E M I C O N D U C T O R S DC1571/73 SILICON SCHOTTKY S-BAND MICROSTRIP LOW DRIVE MIXER DIODES DESCRIPTION APPLICATIONS The DC1570 series are medium barrier height silicon mixer diodes intended primarily for operation as low drive mixer
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DC1571/73
DC1570
300mW
c00mV
200mV
DC1571
DC1573
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JAN1N23WG
Abstract: 1N21* Diode Detector Holder JAN1N21WE 1N23C 1N23C diode 1N53C JAN1N21WG MA490E MA492C 1N831A
Text: N/A-COMSEMICONDtBRLNGTON 11 J> • Sb4E2mGGÜ13SÔT■MIC J Point Contact Mixer and Detector Diodes Features ■ PACKAGED CARTRIDGE POINT CONTACT MIXER DIODES ■ COAXIAL POINT CONTACT MIXER DIODES ■ AXIAL LEAD GLASS PACKAGED POINT CONTACT MIXER DIODES ■ AXIAL LEAD GLASS PACKAGED
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