SILICON PNP EPITAXIAL PLANAR TRANSISTOR HIGH HFE Search Results

SILICON PNP EPITAXIAL PLANAR TRANSISTOR HIGH HFE Result Highlights (5)

Part	Manufacturer	Description
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
MG800FXF1JMS3	Toshiba Electronic Devices & Storage Corporation	N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET
2SA1162	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-0.15 A / hFE=70~400 / VCE(sat)=-0.3 V / AEC-Q101 / SOT-346
2SA1586	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-0.15 A / hFE=70~400 / VCE(sat)=-0.3 V / AEC-Q101 / SOT-323
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold

SILICON PNP EPITAXIAL PLANAR TRANSISTOR HIGH HFE Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SA1693 Preliminary PNP EPITAXIAL SILICON TRANSISTOR SILICON PNP EPITAXIAL PLANAR TRANSISTOR  DESCRIPTION The UTC 2SA1693 is a silicon PNP epitaxial planar transistor, it uses UTC’s advanced technology to provide the customers with high	Original	2SA1693 2SA1693 2SA1693L-x-T3P-T 2SA1693G-x-T3P-T QW-R214-017	PDF
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SA1693 Preliminary PNP EPITAXIAL SILICON TRANSISTOR SILICON PNP EPITAXIAL PLANAR TRANSISTOR  DESCRIPTION The UTC 2SA1693 is a silicon PNP epitaxial planar transistor, it uses UTC’s advanced technology to provide the customers with high	Original	2SA1693 2SA1693 2SA1693L-x-T3P-T 2SA1693G-x-T3P-T QW-R214-017	PDF
Contextual Info: UNISONIC TECHNOLOGIES CO., 2SB1260 PNP EPITAXIAL SILICON TRANSISTOR POWER TRANSISTOR DESCRIPTION The UTC 2SB1260 is a epitaxial planar type PNP silicon transistor. 1 FEATURES High breakdown voltage and high current. BVCEO= -80V, Ic = -1A Good hFE linearity.	Original	2SB1260 2SB1260 OT-89 2SB1260L 2SB1260-AB3-R 2SB1260L-AB3-R OT-89 QW-R208-017	PDF
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SB936 Preliminary PNP EPITAXIAL SILICON TRANSISTOR SILICON PNP EPITAXIAL PLANAR TYPE  DESCRIPTION The UTC 2SB936 is a silicon PNP epitaxial planar type, it uses UTC’s advanced technology to provide the customers with high DC	Original	2SB936 2SB936 2SB936L-TN3-T 2SB936G-TN3-T O-252 2SB936L-TN3-R 2SB936G-TN3-R QW-R209-029	PDF
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SB1260 PNP EPITAXIAL SILICON TRANSISTOR POWER TRANSISTOR 1 DESCRIPTION The UTC 2SB1260 is a epitaxial planar type PNP silicon transistor. SOT-89 FEATURES High breakdown voltage and high current. BVCEO= -80V, IC= -1A Good hFE linearity.	Original	2SB1260 2SB1260 OT-89 O-252 2SB1260L 2SB1260-x-AB3-F-R 2SB1260L-x-AB3-F-R 2SB1260-x-TN3-F-R 2SB1260L-x-TN3-F-R 2SB1260-x-TN3-F-T	PDF
Contextual Info: UTC 2SB1260 PNP EPITAXIAL SILICON TRANSISTOR POWER TRANSISTOR DESCRIPTION The UTC 2SB1260 is a epitaxial planar type PNP silicon transistor. 1 FEATURES High breakdown voltage and high current. BVCEO= -80V,Ic = -1A Good hFE linearity. *Low VCE sat SOT-89	Original	2SB1260 2SB1260 OT-89 QW-R208-017	PDF
Contextual Info: UTC 2SB1260 PNP EPITAXIAL SILICON TRANSISTOR POWER TRANSISTOR DESCRIPTION The UTC 2SB1260 is a epitaxial planar type PNP silicon transistor. 1 FEATURES High breakdown voltage and high current. BVCEO= -80V,Ic = -1A Good hFE linearity. *Low VCE sat SOT-89	Original	2SB1260 2SB1260 OT-89 100ms QW-R208-017	PDF
Contextual Info: UTC 2SB1198 PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY PNP TRANSISTOR DESCRIPTION The UTC 2SB1198 is an epitaxial planar type PNP silicon transistor. 2 1 FEATURES High breakdown voltage : BVCEO= -80V Low VCE sat : VCE(sat)= -0.2V (Typ) (Ic/IB = -0.5A/-50mA)	Original	2SB1198 2SB1198 A/-50mA) OT-23 QW-R206-040	PDF
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SB1198 PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY PNP TRANSISTOR  DESCRIPTION The UTC 2SB1198 is an epitaxial planar type PNP silicon transistor.  FEATURES * High breakdown voltage : BVCEO= -80V * Low VCE sat : VCE(sat)= -0.2V (Typ)	Original	2SB1198 2SB1198 A/-50mA) 2SB1198G-x-AE3-R OT-23 QW-R206-040	PDF
2SB1198 Abstract: sot akr Contextual Info: UTC 2SB1198 PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY PNP TRANSISTOR DESCRIPTION The UTC 2SB1198 is an epitaxial planar type PNP silicon transistor. 2 1 FEATURES High breakdown voltage : BVCEO= -80V Low VCE sat : VCE(sat)= -0.2V (Typ) (Ic/IB = -0.5A/-50mA)	Original	2SB1198 2SB1198 A/-50mA) OT-23 QW-R206-040 sot akr	PDF
Contextual Info: SOP8501 SOP8501 Ordering number : ENN8007 PNP Epitaxial Planar Silicon Transistor NPN Triple Diffused Planar Silicon Transistor High-Voltage Driver Applications Features • • High breakdown voltage. VCEO≥400V Excellent hFE linearlity. Specifications	Original	OP8501 ENN8007 2000mm2â OP8501/D	PDF
ITR04446 Abstract: ITR04587 Contextual Info: SOP8501 Ordering number : ENN8007 SOP8501 PNP Epitaxial Planar Silicon Transistor NPN Triple Diffused Planar Silicon Transistor High-Voltage Driver Applications Features • • High breakdown voltage. VCEO≥400V Excellent hFE linearlity. Specifications	Original	OP8501 ENN8007 VCEO400V) 2000mm2 ITR04446 ITR04587	PDF
2SB1412 Abstract: 2SB1412L-TN3-F-R 2SB1412-TN3-F-R Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SB1412 PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR DESCRIPTION The UTC 2SB1412 is an epitaxial planar type PNP silicon transistor. 1 TO-252 FEATURES Excellent DC current gain characteristics Low VCE SAT	Original	2SB1412 2SB1412 O-252 2SB1412L 2SB1412-TN3-F-R 2SB1412L-TN3-F-R QW-R209-021 2SB1412L-TN3-F-R 2SB1412-TN3-F-R	PDF
transistor EB 525 Abstract: TRANSISTOR 4148 ic 4148 5262n din 4148 N 4148 41873 CCB030 2N4036 Contextual Info: Silizium-PNP-Epitaxial-Planar-Transistor Silicon PNP Epitaxial Planar Transistor Anwendungen: Allgem ein Applications: General Besondere Merkmale: Features: • • • Hohe Sperrspannung • Verlustleistung 7 W High reverse voltage Power dissipation 7 W Abmessungen in mm	OCR Scan		PDF

akr sot-23 Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SB1198 PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY PNP TRANSISTOR 3 DESCRIPTION The UTC 2SB1198 is an epitaxial planar type PNP silicon transistor. 2 1 SOT-23 FEATURES * High breakdown voltage : BVCEO= -80V * Low VCE sat : VCE(sat)= -0.2V (Typ)	Original	2SB1198 2SB1198 OT-23 A/-50mA) OT-23 2SB1198L-x-AE3-R 2SB1198G-x-AE3-R QW-R206-040 akr sot-23	PDF
transistor 1012 TO252 Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SB1260 PNP SILICON TRANSISTOR POWER TRANSISTOR DESCRIPTION The UTC 2SB1260 is a epitaxial planar type PNP silicon transistor. FEATURES High breakdown voltage and high current. BVCEO= -80V, IC= -1A Good hFE linearity.	Original	2SB1260 2SB1260 2SB1260L 2SB1260-x-AB3-R 2SB1260L-x-AB3-R 2SB1260-x-TN3-R 2SB1260L-x-TN3-R 2SB1260-x-TN3-T 2SB1260L-x-TN3-T OT-89 transistor 1012 TO252	PDF
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SB1260 PNP SILICON TRANSISTOR POWER TRANSISTOR  DESCRIPTION The UTC 2SB1260 is a epitaxial planar type PNP silicon transistor.  FEATURES * High breakdown voltage and high current. * BVCEO= -80V, IC= -1A * Good hFE linearity.	Original	2SB1260 2SB1260 2SB1260G-x-AB3-R 2SB1260G-x-TN3-R OT-89 O-252 QW-R208-017	PDF
2SA1438 Contextual Info: Ordering number : EN 1857B PNP Epitaxial Planar Silicon Transistor 2SA1438 High hFE, Low-Frequency General-Purpose Amp Applications	Original	1857B 2SA1438 2SA1438	PDF
2SA1740 Abstract: 2SC4548 ITR04445 Contextual Info: Ordering number:ENN3188 PNP Epitaxial Planar Silicon Transistor NPN Triple Diffuesd Planar Silicon Transistor 2SA1740/2SC4548 High-Voltage Driver Applications Features Package Dimensions • High breakdown votlage. · Adoption of MBIT process. · Excellent hFE linearlity.	Original	ENN3188 2SA1740/2SC4548 2SA1740/2SC4548] 25max 2SA1740 2SA1740 2SC4548 ITR04445	PDF
2SC4548E Abstract: 2SA1740 2SC4548 transistor 2sa1740 Contextual Info: Ordering number:EN3188 PNP Epitaxial Planar Silicon Transistor NPN Triple Diffuesd Planar Silicon Transistor 2SA1740/2SC4548 High-Voltage Driver Applications Features Package Dimensions • High breakdown votlage. · Adoption of MBIT process. · Excellent hFE linearlity.	Original	EN3188 2SA1740/2SC4548 2SA1740/2SC4548] 2SA1740 2SC4548E 2SA1740 2SC4548 transistor 2sa1740	PDF
2SB1260 Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SB1260 PNP SILICON TRANSISTOR POWER TRANSISTOR 1 DESCRIPTION The UTC 2SB1260 is a epitaxial planar type PNP silicon transistor. SOT-89 FEATURES High breakdown voltage and high current. BVCEO= -80V, IC= -1A Good hFE linearity.	Original	2SB1260 2SB1260 OT-89 O-252 2SB1260L 2SB1260-x-AB3-R 2SB1260L-x-AB3-R 2SB1260-x-TN3-R 2SB1260L-x-TN3-R 2SB1260-x-TN3-T	PDF
2SA1784 Abstract: 2SA1781 Contextual Info: Ordering number:EN3520 PNP Epitaxial Planar Silicon Transistor NPN Triple Diffused Planar Silicon Transistor 2SA1784/2SC4644 High Voltage Driver Applications Features Package Dimensions • Adoption of MBIT process. · High breakdown voltage VCEO≥400V .	Original	EN3520 2SA1784/2SC4644 VCEO400V) 2SA17814/2SC4644] 2SA1784 2SA1784 2SA1781	PDF
2SC4548 Abstract: 2SA1740 Contextual Info: 2SA1740 / 2SC4548 Ordering number : EN3188A SANYO Semiconductors DATA SHEET PNP Epitaxial Planar Silicon Transistor NPN Triple Diffuesd Planar Silicon Transistor 2SA1740 / 2SC4548 High-Voltage Driver Applications Features • • • High breakdown votlage.	Original	2SA1740 2SC4548 EN3188A 2SA1740 250mm20 2SC4548	PDF
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD BD238 PNP EPITAXIAL SILICON TRANSISTOR -80V, PNP TRANSISTOR  DESCRIPTION The UTC BD238 is a PNP epitaxial planar transistor, it uses UTC’s advanced technology to provide the customers with high DC current gain and high collector-emitter breakdown voltage, etc.	Original	BD238 BD238 BD238L-T60-K BD238G-T60-K O-126 BD238L-T6S-K BD238G-T6S-K O-126S QW-R226-002	PDF

SILICON PNP EPITAXIAL PLANAR TRANSISTOR HIGH HFE Search Results

SILICON PNP EPITAXIAL PLANAR TRANSISTOR HIGH HFE Result Highlights (5)

SILICON PNP EPITAXIAL PLANAR TRANSISTOR HIGH HFE Datasheets Context Search

2SB1198

ITR04446

2SB1412

transistor EB 525

akr sot-23

transistor 1012 TO252

2SA1438

2SA1740

2SC4548E

2SB1260

2SA1784

2SC4548