SILICON PIN PHOTODIODE LASER DETECTION Search Results

Contextual Info: KODENSHI CORP • HPI-08l4 i, I s — y-' -fcf— E5E D • SE4EbOfl ODDOIEI 4 ■ 4 3 > P IN ^ 7 * b f 4 K T 'T , DIMENSIONS T ^ ih S '3 (Unit:mm T» HPI-0814 is a silicon PIN photodiode for detecting laser beam. HPI-0814 has 4 active areas (photodiodes) integrated

udt UV100

Abstract: UV-35 UV-20 UDT UDT BNC UV UDT UV-005 UV-005 UV-015 UV-100 UV-100L UV-50
Contextual Info: UV Enhanced Series Inversion Layers and Planar Diffused Silicon Photodiodes UDT Sensors offers two distinct families of UV enhanced silicon photodiodes. Inversion channel series and planar diffused series. Both families of devices are especially designed for low noise detection in the

TO-59 Package

Contextual Info: Detectors Silicon Avalanche Photodiode SAR-/SARP-Series Description The SAR500-Series is based on a “reach-through” structure for excellent quantum efficiency and high speed. The peak sensitivity in the NIR region enables rangefinding applications with pulsed laser diodes. A variety of package options is available.

Contextual Info: Detectors Silicon Avalanche Photodiode SAR-/SARP-Series Description The SAR500-Series is based on a “reach-through” structure for excellent quantum efficiency and high speed. The peak sensitivity in the NIR region enables rangefinding applications with pulsed laser diodes. A variety of package options is available.

Contextual Info: Detectors Silicon Avalanche Photodiode SAR-/SARP-Series Description The SAR500-Series is based on a “reach-through” structure for excellent quantum efficiency and high speed. The peak sensitivity in the NIR region enables rangefinding applications with pulsed laser diodes. A variety of package options is available.

SARP500

Abstract: SAR-500
Contextual Info: Silicon Avalanche Photodiode SAR-/SARP-Series DESCRIPTION The SAR500-Series is based on a “reach-through” structure for excellent quantum efficiency and high speed. The peak sensitivity in the NIR region enables rangefinding applications with pulsed laser diodes.

Contextual Info: Detectors Silicon Avalanche Photodiode SAR-/SARP-Series Description The SAR500-Series is based on a “reach-through” structure for excellent quantum efficiency and high speed. The peak sensitivity in the NIR region enables rangefinding applications with pulsed laser diodes. A variety of package options is available.

Contextual Info: Silicon Avalanche Photodiode SAR-/SARP-Series DESCRIPTION The SAR500-Series is based on a “reach-through” structure for excellent quantum efficiency and high speed. The peak sensitivity in the NIR region enables rangefinding applications with pulsed laser diodes.

PIN photodiode 500 nm

Abstract: silicon pin photodiode laser detection S6795 DVD Laser pickup optical pickup unit dvd laser green laser dvd optical pickup optical pickup laser pickup dvd S7747
Contextual Info: Si PIN PHOTODIODE S7747 6-element photodiode for violet laser detection FEATURES l Clear plastic molded package 454.8 mm l High sensitivity: 0.26 A/W Typ. (λ=410 nm) l High-speed response: 500 MHz Typ. (VR=5 V) APPLICATIONS l Violet to blue green laser detection

Contextual Info: Silicon Avalanche Photodiode SAR-/SARP-Series DESCRIPTION The SAR500-Series is based on a “reach-through” structure for excellent quantum efficiency and high speed. The peak sensitivity in the NIR region enables rangefinding applications with pulsed laser diodes.

Contextual Info: DATASHEET Photon Detection YAG YAG-444-4AH Silicon PIN Quadrant Detector Key Features and Benefits The YAG series high-performance Si PIN photodiodes are well-suited for applications such as munition guidance, laser spot tracking and others. E T YAG series of Silicon PIN quadrant detectors are

cooler thermistor APD

Abstract: 3959 8-pin sar3500
Contextual Info: Silicon Avalanche Photodiode SAR3500 DESCRIPTION The SAR3500 is based on a “reach-through” structure for excellent quantum efficiency and high speed. The APD is hermetically sealed in a modified TO-8 package. The SAR3500 is also available in a hermetically sealed

Contextual Info: Silicon Avalanche Photodiode SAR1500x/3000x DESCRIPTION The SAR1500/3000x is based on a “reach-through” structure for excellent quantum efficiency and high speed. The SAR1500x is hermetically sealed in a modified TO-5 package, the SAR 3000x in a modified

Contextual Info: Silicon Avalanche Photodiode SAR3500 DESCRIPTION The SAR3500 is based on a “reach-through” structure for excellent quantum efficiency and high speed. The APD is hermetically sealed in a modified TO-8 package. The SAR3500 is also available in a hermetically sealed

HIGHWAY 09 20 PIN IC PIN DIAGRAM

Abstract: HIGHWAY 09 16 PIN IC PIN DIAGRAM HIGHWAY 08 IC PIN DIAGRAM HIGHWAY 08 20 PIN IC PIN DIAGRAM power supply 24 volt
Contextual Info: HRF-TX1000 Advance Information Features • • • • • Four Channels Of Integrated Laser Diode Drive & Control Operates From Single 3.3 Volt Power Supply IEEE 802.3ae Compliant, XAUI Compatible Interface GBIC Compatible Single Point Failure Detection

Contextual Info: P RE L I M I NARY Detectors UV-Enhanced Silicon Avalanche Photodiode SUR-Series Description The SUR-Series is based on a silicon “reach-through” structure with high sensitivity in the DUV/UV wavelength range . Many applications particularly in the medical and

ABC550-04

Abstract: SAR1500H4
Contextual Info: H2 / H3 / H4 / H5 Series Silicon and InGaAs-APD Receiver DESCRIPTION The H2/H3/H4/H5-Series includes a Silicon or InGaAs Avalanche Photodiode with an optimized low noise hybrid preamplifier for the use in high speed, low light detection, in laser range finding, LIDAR, medical and

Contextual Info: Silicon Avalanche Photodiode SAR-/SARP-Series DESCRIPTION The SAR500-Series is based on a “reach-through” structure for excellent quantum efficiency and high speed. The peak sensitivity in the NIR region enables rangefinding applications with pulsed laser diodes.

Contextual Info: Detectors Silicon Geiger Mode Avalanche Photodiode Description The SAP500-Series is based on a “reach-through” structure for excellent quantum efficiency, extremely low noise and bulk dark current and high gain. They are intended for ultra-low light level applications. This APD can be used

Contextual Info: Detectors Silicon Geiger Mode Avalanche Photodiode Description The SAP500-Series is based on a “reach-through” structure for excellent quantum efficiency, extremely low noise and bulk dark current and high gain. They are intended for ultra-low light level applications. This APD can be used

FIL-3C

Abstract: fil 3c
Contextual Info: Photoconductive Series Planar Diffused Silicon Photodiodes The Photoconductive Detector Series are suitable for high speed and high sensitivity applications. The spectral range extends from 350 to 1100 nm, making these photodiodes ideal for visible and near IR applications,

Contextual Info: Detectors Silicon Geiger Mode Avalanche Photodiode Description The SAP500-Series is based on a “reach-through” structure for excellent quantum efficiency, extremely low noise and bulk dark current and high gain. They are intended for ultra-low light level applications. This APD can be used

SAR-500

Abstract: ABC550-04 SAR500H2 apd 400- 700 nm IAE200 SAT800H5 SAR500H4 SAR1500H4 SAR500H5 InGaas APD photodiode, 1550 sensitivity
Contextual Info: H2 / H3 / H4 / H5 Series Silicon and InGaAs-APD Receiver DESCRIPTION The H2/H3/H4/H5-Series includes a Silicon or InGaAs Avalanche Photodiode with an optimized low noise hybrid preamplifier for the use in high speed, low light detection, in laser range finding, LIDAR, medical and

UDT Sensors PSD

Abstract: LSC-30D UDT SC 100 SC-10D SC50D UDT TETRA-LATERAL PSD LSC-5D SC-25D SC10D udt sc 10
Contextual Info: Tetra-Lateral PSD’s Position Sensing Detectors PSD Tetra-lateral position sensing detectors are manufactured with one single resistive layer for both one and two dimensional measurements. They feature a common anode and two cathodes for one dimensional position