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    SILICON PHOTODIODE ARRAY Search Results

    SILICON PHOTODIODE ARRAY Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TRS8E65H Toshiba Electronic Devices & Storage Corporation SiC Schottky Barrier Diode (SBD), 650 V, 8 A, TO-220-2L Visit Toshiba Electronic Devices & Storage Corporation
    TRS40N120HB Toshiba Electronic Devices & Storage Corporation SiC Schottky Barrier Diode (SBD), 1200 V, 40 A, 2 in 1, TO-247 Visit Toshiba Electronic Devices & Storage Corporation
    MKZ6V2 Toshiba Electronic Devices & Storage Corporation Zener Diode, 6.2 V, SOT-23 Visit Toshiba Electronic Devices & Storage Corporation
    MSZ6V8 Toshiba Electronic Devices & Storage Corporation Zener Diode, 6.8 V, SOT-346 Visit Toshiba Electronic Devices & Storage Corporation
    MUZ20V Toshiba Electronic Devices & Storage Corporation Zener Diode, 20 V, SOT-323 Visit Toshiba Electronic Devices & Storage Corporation

    SILICON PHOTODIODE ARRAY Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    IR photodiode sensor

    Abstract: Photodiode Array linear C2334 linear array photodiode element silicon linear photodiode array photodiode linear array 256 C4351 silicon photodiode array Photodiode Array 2d Linear Image sensor IC
    Text: Photodiode Arrays/Linear Image Sensors 16-ELEMENT SILICON PHOTODIODE ARRAY S5668 SERIES For various measuring purpose This photodiode consists of 16 elem ents of Silicon Photodiode having active area of 1.175mm (width X 2.0mm (height) with 1.575mm pitch. This diode is


    OCR Scan     		16-ELEMENT S5668 175mm 575mm 46-ELEMENT C4351 IR photodiode sensor Photodiode Array linear C2334 linear array photodiode element silicon linear photodiode array photodiode linear array 256 silicon photodiode array Photodiode Array 2d Linear Image sensor IC PDF

    S268P

    Abstract: No abstract text available
    Text: S268P Silicon PIN Photodiode Array Description S268P is a silicon PIN photodiode array in a inline configuration. Three single photodiode chips with a common cathode are mounted in a waterclear 8 pin dual in line package. Each chip measures 3mm by 3mm and provides a radiant


    Original     		S268P S268P D-74025 15-Jul-96 PDF

    CD 8403

    Abstract: S268P
    Text: TELEFUNKEN Semiconductors S 268 P Silicon PIN Photodiode Array Description S268P is a silicon PIN photodiode array in a inline configuration. Three single photodiode chips with a common cathode are mounted in a waterclear 8 pin dual in line package. Each chip measures 3mm by 3mm and provides


    Original     		S268P D-74025 CD 8403 PDF

    S268P

    Abstract: No abstract text available
    Text: S268P Vishay Semiconductors Silicon PIN Photodiode Array Description S268P is a silicon PIN photodiode array in a inline configuration. Three single photodiode chips with a common cathode are mounted in a waterclear 8 pin dual in line package. Each chip measures 3mm by 3mm and provides a radiant sensitive area of 7.5 mm2.


    Original     		S268P S268P D-74025 20-May-99 PDF

    S268P

    Abstract: silicon photodiode array
    Text: S268P Vishay Telefunken Silicon PIN Photodiode Array Description S268P is a silicon PIN photodiode array in a inline configuration. Three single photodiode chips with a common cathode are mounted in a waterclear 8 pin dual in line package. Each chip measures 3mm by 3mm and provides a radiant sensitive area of 7.5 mm2.


    Original     		S268P S268P D-74025 20-May-99 silicon photodiode array PDF

    S268P

    Abstract: No abstract text available
    Text: S268P Vishay Telefunken Silicon PIN Photodiode Array Description S268P is a silicon PIN photodiode array in a inline configuration. Three single photodiode chips with a common cathode are mounted in a waterclear 8 pin dual in line package. Each chip measures 3mm by 3mm and provides a radiant sensitive area of 7.5 mm2.


    Original     		S268P S268P D-74025 20-May-99 PDF

    S268P

    Abstract: Photodiode Array
    Text: S268P Vishay Telefunken Silicon PIN Photodiode Array Description S268P is a silicon PIN photodiode array in a inline configuration. Three single photodiode chips with a common cathode are mounted in a waterclear 8 pin dual in line package. Each chip measures 3mm by 3mm and provides a radiant sensitive area of 7.5 mm2.


    Original     		S268P S268P D-74025 20-May-99 Photodiode Array PDF

    Untitled

    Abstract: No abstract text available
    Text: S268P Vishay Semiconductors Silicon PIN Photodiode Array Description S268P is a silicon PIN photodiode array in a inline configuration. Three single photodiode chips with a common cathode are mounted in a waterclear 8 pin dual in line package. Each chip measures 3mm by 3mm and provides a radiant sensitive area of 7.5 mm2.


    Original     		S268P S268P 08-Apr-05 PDF

    S268P

    Abstract: silicon photodiode array
    Text: S268P Vishay Semiconductors Silicon PIN Photodiode Array Description S268P is a silicon PIN photodiode array in a inline configuration. Three single photodiode chips with a common cathode are mounted in a waterclear 8 pin dual in line package. Each chip measures 3mm by 3mm and provides a radiant sensitive area of 7.5 mm2.


    Original     		S268P S268P 18-Jul-08 silicon photodiode array PDF

    U850

    Abstract: 2057 Siemens photodiode visible light
    Text: SIEMENS KOM 2057 L 3-CHIP SILICON PIN PHOTODIODE ARRAY FEATURES Package Dimensions in mm * Silicon Photodiode in Planar Technology * N-Sl Material Anode, Front Contact Cathode, Back Contact * High Reliability * High Packing Oensity * Low Noise * No Testable Degradation


    OCR Scan     		M2057L U850 2057 Siemens photodiode visible light PDF

    IE-120

    Abstract: VB0 MARKING
    Text: SIEMENS KOM 2045 8-CHIP SILICON PHOTODIODE ARRAY VERY LOW DARK CURRENT F EA T U R E S * Silicon Photodiode in Planar Technology Package Dimensions in mm PC board Frame Chip Transparent * N-Si Material Anode, Front Contact Cathode, Back Contact * High Reliability


    OCR Scan     		K0M204S IE-120 VB0 MARKING PDF

    2100-B

    Abstract: No abstract text available
    Text: SIEMENS KOM 2033 B DAYLIGHT FILTER KOM 2033 BF KOM 2100 B DAYLIGHT FILTER KOM 2100 BF 6-CHIP SILICON PIN PHOTODIODE ARRAY 8-44 FEATURES Characteristics, Single Segment TA= 2 5 °C , X =950 nm * Silicon Photodiode in Planar Technology Parameter * N-Si Material


    OCR Scan     		6X10-14 X1012 K0M2033B/2100B/2033BF/21006F 2033B/21006 KOM2033B/2100B/2033BF/2100BF 2100-B PDF

    silicon photodiode array

    Abstract: PIN photodiode crosstalk PIN-Photodiode-Array 16 Photodiode-Array Photodiode-Array PIN photodiode A/W 850nm 480nm detection IR photodiode array Photodiode Array 2d Photodiode Array
    Text: SCA-MA256ESP Silicon PIN Photodiode Array P r e lim inar y Da ta She e t Description The SCA-MA256ESP is a back-illuminated silicon Array Configuration photodiode array module for use in applications where peak sensitivity from 480nm to 800nm is required.


    Original     		SCA-MA256ESP SCA-MA256ESP 480nm 800nm MIL-STD-883 SCA-MA256ES silicon photodiode array PIN photodiode crosstalk PIN-Photodiode-Array 16 Photodiode-Array Photodiode-Array PIN photodiode A/W 850nm 480nm detection IR photodiode array Photodiode Array 2d Photodiode Array PDF

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS KOM 2045 8-CHIP SILICON PHOTODIODE ARRAY VERY LOW DARK CURRENT FEATURES • Silicon Photodiode in Planar Technology • N-Si Material Anode, Front Contact Cathode, Back Contact • High Reliability • Low Noise • Detector for Low Luminance • No Testable Degradation


    OCR Scan     		3X10-15 x1013 KOM2045 fl23t PDF

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS KOM 2085 4-CHIP SILICON PIN PHOTODIODE ARRAY Package Dimensions in mm Transparent Schematic K A2o-t¡l-to-oA1 A3o-C+- -KJ-o A4 FEA TU RES Characteristics, Single Segment TA=25°C, std. light A, T=2856 K * Silicon Photodiode in Planar Technology


    OCR Scan     		7X1012 KQM2085 fl23t PDF

    Untitled

    Abstract: No abstract text available
    Text: OID2 6 n/p photodiode array chip _ General Description Optical device consisting of a 6 chip silicon N/P photodiode array with high uniformity for the output signals. The active area of the silicon die is 2.5 x 1.1 mm2. The high optical responsivity is due to the antireflective


    Original     		030mm PDF

    Photodiode

    Abstract: No abstract text available
    Text: OID2 6 n/p photodiode array chip _ General Description Optical device consisting of a 6 chip silicon N/P photodiode array with high uniformity for the output signals. The active area of the silicon die is 2.5 x 1.1 mm2. The high optical responsivity is due to the antireflective


    Original     		030mm Photodiode PDF

    Untitled

    Abstract: No abstract text available
    Text: DATASHEET Photon Detection C30985E 25-Element Silicon Avalanche Photodiode Si APD Linear Array The C30985E is a 25-element silicon avalanche photodiode (Si APD) consisting of a double diffused “reach through” structure. This structure provides high responsivity up to 1060 nm incidence radiation and even beyond, as well as


    Original     		C30985E 25-Element C30985E PDF

    Photodiode-Array

    Abstract: PIN-Photodiode-Array Photodiode Array 2d 16 Photodiode-Array SCA-CA512ES silicon photodiode array Silicon Photodiode Chip 480nm detection photodiode array PIN photodiode chip
    Text: SCA-CA512ES Silicon PIN Photodiode Array P r e lim inar y Da ta She e t Description The SCA-CA512ES is a back-illuminated silicon photodiode Array Configuration array for use in applications where peak sensitivity from 480nm to 800nm is required. The ultra low cross talk between cells enhances photon


    Original     		SCA-CA512ES SCA-CA512ES 480nm 800nm MIL-STD-883 Photodiode-Array PIN-Photodiode-Array Photodiode Array 2d 16 Photodiode-Array silicon photodiode array Silicon Photodiode Chip 480nm detection photodiode array PIN photodiode chip PDF

    SCA-CA64ES

    Abstract: PIN-Photodiode-Array photodiode array Photodiode Array 2d Photodiode-Array Semicoa "PIN photodiode" "crosstalk" PIN photodiode 850 nm scintillator
    Text: SCA-CA64ES Silicon PIN Photodiode Array P r e lim inar y Da ta She e t Description The SCA-CA64ES is a back-illuminated silicon photodiode Array Configuration array for use in applications where peak sensitivity from 480nm to 800nm is required. The ultra low cross talk between cells enhances photon


    Original     		SCA-CA64ES SCA-CA64ES 480nm 800nm MIL-STD-883 PIN-Photodiode-Array photodiode array Photodiode Array 2d Photodiode-Array Semicoa "PIN photodiode" "crosstalk" PIN photodiode 850 nm scintillator PDF

    Photodiode Array 2d

    Abstract: 16 Photodiode-Array Photodiode-Array PIN photodiode 850nm PIN-Photodiode-Array with scintillator PIN photodiode chip 850nm photodiode 850nm nep Semicoa "PIN photodiode" "crosstalk"
    Text: SCA-CA256ES Silicon PIN Photodiode Array P r e lim inar y Da ta She e t Description The SCA-CA256ES is a back-illuminated silicon photodiode Array Configuration array for use in applications where peak sensitivity from 480nm to 800nm is required. The ultra low cross talk between cells enhances photon


    Original     		SCA-CA256ES SCA-CA256ES 480nm 800nm MIL-STD-883 Photodiode Array 2d 16 Photodiode-Array Photodiode-Array PIN photodiode 850nm PIN-Photodiode-Array with scintillator PIN photodiode chip 850nm photodiode 850nm nep Semicoa "PIN photodiode" "crosstalk" PDF

    Photodiode Array 2d

    Abstract: PIN-Photodiode-Array with scintillator PIN-Photodiode-Array Photodiode-Array silicon photodiode array SCA-CA25ES 480nm detection PIN photodiode crosstalk
    Text: SCA-CA25ES Silicon PIN Photodiode Array P r e lim inar y Da ta She e t Description The SCA-CA25ES is a back-illuminated silicon photodiode Array Configuration array for use in applications where peak sensitivity from 480nm to 800nm is required. The ultra low cross talk between cells enhances photon


    Original     		SCA-CA25ES SCA-CA25ES 480nm 800nm MIL-STD-883 Photodiode Array 2d PIN-Photodiode-Array with scintillator PIN-Photodiode-Array Photodiode-Array silicon photodiode array 480nm detection PIN photodiode crosstalk PDF

    Semicoa "PIN photodiode" "crosstalk"

    Abstract: 480nm detection Photodiode Array 2d
    Text: SCA-CA256ES Silicon PIN Photodiode Array P r e lim inar y Da ta She e t Description The SCA-CA256ES is a back-illuminated silicon photodiode Array Configuration array for use in applications where peak sensitivity from 480nm to 800nm is required. The ultra low cross talk between cells enhances photon


    Original     		SCA-CA256ES SCA-CA256ES 480nm 800nm MIL-STD-883 Semicoa "PIN photodiode" "crosstalk" 480nm detection Photodiode Array 2d PDF

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS KOM 2084 4-CHIP SILICON PIN PHOTODIODE ARRAY Package Dimensions in mm Frame PC board l \ | \ Chip \ \ Coating \ | Schematic K o A 2 0 -W -W -0 A 1 A3 o - t > f -W- 0 A4 FEATURES Characteristics, Single Segment TA=25°C, std. light A, T=2856 K * Silicon Photodiode in Planar Technology


    OCR Scan     		23b35b KOM2Q84 a23b33b PDF