Untitled
Abstract: No abstract text available
Text: Accu-P RF Capacitors Thin Film Low ESR High Q Capacitors As in the Accu-F series the use of very low-loss dielectric materials silicon dioxide and silicon oxynitride in conjunction with highly conductive electrode metals results in low ESR and high Q. At high frequency these characteristics change at a slower rate with increasing frequency
|
Original
|
60ppm/
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Accu-P RF Capacitors Thin Film Low ESR High Q Capacitors As in the Accu-F series the use of very low-loss dielectric materials silicon dioxide and silicon oxynitride in conjunction with highly conductive electrode metals results in low ESR and high Q. At high frequency these characteristics change at a slower rate with increasing frequency
|
Original
|
60ppm/Â
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Accu-P Thin-Film Chip Capacitors As in the Accu-F® series the use of very low-loss dielectric materials silicon dioxide and silicon oxynitride in conjunction with highly conductive electrode metals results in low ESR and high Q. At high frequency these characteristics change ata slower rate with increasing frequency than conventional ceramic microwave capacitors. Using thin-film technology, the above-mentioned frequency
|
Original
|
60ppm/
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Accu-P Thin-Film Chip Capacitors As in the Accu-F® series the use of very low-loss dielectric materials silicon dioxide and silicon oxynitride in conjunction with highly conductive electrode metals results in low ESR and high Q. At high frequency these characteristics change ata slower rate with increasing frequency than conventional ceramic microwave capacitors. Using thin-film technology, the above-mentioned frequency
|
Original
|
60ppm/
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Effects of Deposition Method of PECVD Silicon Nitride as MIM Capacitor Dielectric for GaAs HBT Technology Jiro Yota GaAs Technology, Skyworks Solutions, Inc. 2427 W. Hillcrest Drive, Newbury Park, CA 91320, USA jiro.yota@skyworksinc.com Thin silicon nitride Si3N4 films deposited using plasma-enhanced
|
Original
|
300oC,
|
PDF
|
Untitled
Abstract: No abstract text available
Text: APT10SCE170D Zero Recovery Silicon Carbide Schottky Die PRODUCT APPLICATIONS PRODUCT BENEFITS • Anti-Parallel Diode -Switchmode Power Supply -Inverters • Power Factor Correction PFC • Higher Reliability Systems • Minimizes or eliminates snubber PRODUCT FEATURES
|
Original
|
APT10SCE170D
|
PDF
|
SCHEMATIC DIAGRAM OF WIFI RF POWER TRANSISTOR
Abstract: SCHEMATIC DIAGRAM OF 2.4 GHZ WIFI RF POWER wifi booster schematic simple fm transmitter mini project report for engineering students Wifi Booster Circuit Diagram wifi signal booster schematic smd-transistor DATA BOOK 2.4 ghz FM wifi RECEIVER CIRCUIT DIAGRAM fm transistor radio mini project 2.4 ghz 2 WATTS POWER AMPLIFIER SCHEMATIC DIAGRAM
Text: APRIL2008 ALSO PUBLISHED ONLINE: www.highfrequencyelectronics.com NEW SYNTHESIZED SIGNAL GENERATOR OFFERS LOW COST, HIGH VALUE INSIDE THIS ISSUE: Transmission Lines on Ion-Implanted Silicon Wafers Spatial Combining of Microwave Noise Radiators Tutorial—Performance Capabilities of Antenna Arrays
|
Original
|
APRIL2008
CD-1242-183-10S
CD-1242-183-20S
CD-1242-183-30S
CD-402-802-10S
CD-402-802-20S
CD-402-802-30S
CD-102-103-10S
CD-102-103-20S
CD-102-103-30S
SCHEMATIC DIAGRAM OF WIFI RF POWER TRANSISTOR
SCHEMATIC DIAGRAM OF 2.4 GHZ WIFI RF POWER
wifi booster schematic
simple fm transmitter mini project report for engineering students
Wifi Booster Circuit Diagram
wifi signal booster schematic
smd-transistor DATA BOOK
2.4 ghz FM wifi RECEIVER CIRCUIT DIAGRAM
fm transistor radio mini project
2.4 ghz 2 WATTS POWER AMPLIFIER SCHEMATIC DIAGRAM
|
PDF
|
KOMATSU
Abstract: CY7C199 JESD22
Text: Qualification Report July 1996, QTP# 96112, Version 1.0 Komatsu Silicon Supplier Fab 4, 8" Prime N-type Wafer PRODUCT DESCRIPTION (for qualification) Information provided in this document is intended for generic qualification and technically describes the Cypress part
|
Original
|
CY7C199
28-pin,
300-mil
CY7C199)
7C199C
CY7C199-20VCT
85C/85
KOMATSU
CY7C199
JESD22
|
PDF
|
Bosch oxygen sensor
Abstract: multilayer lithography ic fabrication Bosch PSI IC oxygen Sensor bosch wyko 400 polysilicon* lpcvd automotive sensors bosch MEMS pressure sensor STS Pressure Sensor electrochemical gas sensors datasheet
Text: Custom Product Papers and Briefs Silicon Micromachining Design and Fabrication SUMMARY experiment software, and MathCAD mathematical tools. A PerkinElmer IC Sensors has been a leading R&D and variety of special purpose design tools have been written for
|
Original
|
1034AX6
Bosch oxygen sensor
multilayer lithography ic fabrication
Bosch PSI IC
oxygen Sensor bosch
wyko 400
polysilicon* lpcvd
automotive sensors bosch
MEMS pressure sensor
STS Pressure Sensor
electrochemical gas sensors datasheet
|
PDF
|
G173-G179
Abstract: transistor G179
Text: Journal of The Electrochemical Society, 156 ͑11͒ G173-G179 ͑2009͒ G173 0013-4651/2009/156͑11͒/G173/7/$25.00 The Electrochemical Society Interlevel Dielectric Processes Using PECVD Silicon Nitride, Polyimide, and Polybenzoxazole for GaAs HBT Technology
|
Original
|
G173-G179
/G173/7/
G173-G179
transistor G179
|
PDF
|
SCS205KG
Abstract: SCS220KE2 SCS240KE2 SCS212AJ SCS230KE2 SCS210AJ
Text: SiC Power Devices vol.3 The Industry's First Mass-Produced "Full SiC" Power Modules ROHM now offers SiC power devices featuring a number of characteristics, including: high breakdown voltage, low power consumption, and high-speed switching operation not provided by conventional silicon devices.
|
Original
|
000A-class)
56P6733E
1500SG
SCS205KG
SCS220KE2
SCS240KE2
SCS212AJ
SCS230KE2
SCS210AJ
|
PDF
|
130NM cmos process parameters
Abstract: 90 nm CMOS C6416 TMS320C6000 TMS320C6416 90nm cmos cmos logic 90nm nmos 130nm
Text: Chasing Moore’s Law with 90-nm: More Than Just a Process Shrink By Ray Simar, Manager of Advanced DSP Architecture In the electronics industry, the term “process shrink” is often used to refer to when a semiconductor company migrates an existing design to a smaller process technology.
|
Original
|
90-nm:
720-MHz
TMS320C6416
C6416
130-nm
90-nm
130NM cmos process parameters
90 nm CMOS
TMS320C6000
90nm cmos
cmos logic 90nm
nmos 130nm
|
PDF
|
walkie-talkie
Abstract: Silicon oxynitride
Text: Accu-F / Accu-P® Thin-Film Technology THE IDEAL CAPACITOR The non-ideal characteristics of a real capacitor can be ignored at low frequencies. Physical size imparts inductance to the capacitor and dielectric and metal electrodes result in resistive losses, but these often are of negligible effect on the
|
Original
|
100MHz)
walkie-talkie
Silicon oxynitride
|
PDF
|
ALD HfO2 and Al2O3 as MIM Capacitor Dielectric for GaAs HBT Technology
Abstract: No abstract text available
Text: ALD HfO2 and Al2O3 as MIM Capacitor Dielectric for GaAs HBT Technology Jiro Yota GaAs Technology, Skyworks Solutions, Inc. 2427 W. Hillcrest Drive, Newbury Park, CA 91320, USA jiro.yota@skyworksinc.com Hafnium dioxide HfO2 and aluminum oxide (Al2O3) films have
|
Original
|
01AC09
ALD HfO2 and Al2O3 as MIM Capacitor Dielectric for GaAs HBT Technology
|
PDF
|
|
|
m27c2001 sgs-thomson
Abstract: M27C2001 PLCC32 QN101
Text: QN101 QUALITY NOTE IMPROVED PASSIVATION FOR OTP MEMORY PRODUCTS The CMOS OTP Memory products are part of the overall EPROM upgrade program through which the process and products are being upgraded, both for performance, reliability and to reach smaller die sizes.
|
Original
|
QN101
m27c2001 sgs-thomson
M27C2001
PLCC32
QN101
|
PDF
|
Untitled
Abstract: No abstract text available
Text: ATC 400 L Series Precision Tolerance NPO RF Microwave Capacitors • EIA Case Size 0402 • Capacitance Range 0.1 pF to 68 pF • Tolerances to ±0.01 pF • Ultra Stable Performance • RoHS Compliant / Lead-Free ELECTRICAL AND MECHANICAL SPECIFICATIONS ATC’s new 400L Series Precision Tolerance, Thin Film, NPO RF
|
Original
|
|
PDF
|
Untitled
Abstract: No abstract text available
Text: ATC 400 S Series Precision Tolerance NPO RF Microwave Capacitors • EIA Case Size 0603 • Capacitance Range 0.1 pF to 68 pF • Tolerances to ±0.02 pF • Ultra Stable Performance • RoHS Compliant / Lead-Free ELECTRICAL AND MECHANICAL SPECIFICATIONS ATC’s new 400S Series Precision Tolerance, Thin Film, NPO RF
|
Original
|
of759
|
PDF
|
Untitled
Abstract: No abstract text available
Text: ATC 400 S Series Precision Tolerance NPO RF Microwave Capacitors • EIA Case Size 0603 • Capacitance Range 0.1 pF to 68 pF • Tolerances to ±0.02 pF • Ultra Stable Performance • RoHS Compliant / Lead-Free ELECTRICAL AND MECHANICAL SPECIFICATIONS ATC’s new 400S Series Precision Tolerance, Thin Film, NPO RF
|
Original
|
of759
|
PDF
|
IEC68-2-58
Abstract: IEC-68-2-58 4.00z 3-400Z
Text: ATC 400 Z Series Precision Tolerance NPO RF Microwave Capacitors • EIA Case Size 0201 • Capacitance Range 0.1 pF to 22 pF • Tolerances to ±0.02 pF • Ultra Stable Performance • RoHS Compliant / Lead-Free ELECTRICAL AND MECHANICAL SPECIFICATIONS ATC’s new 400Z Series Precision Tolerance, Thin Film, NPO RF
|
Original
|
|
PDF
|
Untitled
Abstract: No abstract text available
Text: ATC 400 Z Series Precision Tolerance NPO RF Microwave Capacitors • EIA Case Size 0201 • Capacitance Range 0.1 pF to 22 pF • Tolerances to ±0.02 pF • Ultra Stable Performance • RoHS Compliant / Lead-Free ELECTRICAL AND MECHANICAL SPECIFICATIONS ATC’s new 400Z Series Precision Tolerance, Thin Film, NPO RF
|
Original
|
|
PDF
|
Untitled
Abstract: No abstract text available
Text: ATC 400 S Series Precision Tolerance NPO RF Microwave Capacitors • EIA Case Size 0603 • Capacitance Range 0.1 pF to 68 pF • Tolerances to ±0.02 pF • Ultra Stable Performance • RoHS Compliant / Lead-Free ELECTRICAL AND MECHANICAL SPECIFICATIONS ATC’s new 400S Series Precision Tolerance, Thin Film, NPO RF
|
Original
|
|
PDF
|
Untitled
Abstract: No abstract text available
Text: ATC 400 L Series Precision Tolerance NPO RF Microwave Capacitors • EIA Case Size 0402 • Capacitance Range 0.1 pF to 68 pF • Tolerances to ±0.01 pF • Ultra Stable Performance • RoHS Compliant / Lead-Free ELECTRICAL AND MECHANICAL SPECIFICATIONS ATC’s new 400L Series Precision Tolerance, Thin Film, NPO RF
|
Original
|
|
PDF
|
pont de diode
Abstract: TP3064 MOTOROLA TRANSISTOR 935 1N4007 BD135 motorola rf Power Transistor transistor j4 ss 88 Motorola 1N4007
Text: Order th is data sheet by TP3064/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA TP3064 The RF Line RF Power Transistor The TP3064 is designed for960 MHz mobile base stations in both analog and digital applications. It incorporates high value emitter ballast resistors, gold metallizations
|
OCR Scan
|
TP3064/D
TP3064
TP3064
2PHX33580Q-0
TP3064/D
pont de diode
MOTOROLA TRANSISTOR 935
1N4007
BD135
motorola rf Power Transistor
transistor j4 ss 88
Motorola 1N4007
|
PDF
|
A5 GNE mosfet
Abstract: jo3501 2N4427 equivalent bfr91 2N503 2N5160 MOTOROLA BF431 BFR96 HY 1906 transistor jo2015 kd 2060 transistor
Text: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide ^ Amplifier Data Sheets Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions Cross Reference and Sales Offices 8 9 MOTOROLA
|
OCR Scan
|
1PHX11136Q-14
A5 GNE mosfet
jo3501
2N4427 equivalent bfr91
2N503
2N5160 MOTOROLA
BF431
BFR96
HY 1906 transistor
jo2015
kd 2060 transistor
|
PDF
|
