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    SILICON OPTICAL CONSTANTS Search Results

    SILICON OPTICAL CONSTANTS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TLP3475W Toshiba Electronic Devices & Storage Corporation Photorelay (MOSFET output), 60 V/0.4 A, 300 Vrms, WSON4 Visit Toshiba Electronic Devices & Storage Corporation
    TLP3406SRH4 Toshiba Electronic Devices & Storage Corporation Photorelay (MOSFET output, 1-form-a), 30 V/0.9 A, 300 Vrms, S-VSON16T Visit Toshiba Electronic Devices & Storage Corporation
    TLP5702H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TLP3407SRA Toshiba Electronic Devices & Storage Corporation Photorelay (MOSFET output, 1-form-a), 60 V/1 A, 500 Vrms, S-VSON4T Visit Toshiba Electronic Devices & Storage Corporation
    TLP3407SRH Toshiba Electronic Devices & Storage Corporation Photorelay (MOSFET output, 1-form-a), 60 V/1 A, 500 Vrms, S-VSON4T Visit Toshiba Electronic Devices & Storage Corporation

    SILICON OPTICAL CONSTANTS Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    RPT-34PB3F

    Abstract: SIR-34ST3F 750Lux
    Text: RPT-34PB3F Sensors Phototransistor, top view type RPT-34PB3F The RPT-34PB3F is a silicon planar phototransistor. It is particularly suited for use with a ROHM SIR-34ST3F infrared light emitting diode. !External dimensions Units : mm !Applications Optical control equipment


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    RPT-34PB3F RPT-34PB3F SIR-34ST3F 750Lux PDF

    SIR-341ST3F

    Abstract: No abstract text available
    Text: SIR-341ST3F Sensors Infrared light emitting diode, top view type SIR-341ST3F The SIR-341ST3F is a GaAs infrared light emitting diode housed in clear plastic. This device has a high luminous efficiency and a 940nm peak wavelength suitable for silicon detectors. It is small and at the same time has a wide


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    SIR-341ST3F SIR-341ST3F 940nm PDF

    SIR-320ST3F

    Abstract: No abstract text available
    Text: SIR-320ST3F Sensors Infrared light emitting diode, top view type SIR-320ST3F The SIR-320ST3F is a GaAs infrared light emitting diode housed in clear plastic. This device has a high luminous efficiency and a 940nm spectrum suitable for silicon detectors. It is small and at the same time has a wide radiation angle,


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    SIR-320ST3F SIR-320ST3F 940nm 18deg. 940nm) PDF

    Piezo Ceramic plates

    Abstract: microwave movement detection cantilever for AFM 8484 au 3d scanner
    Text: Agilent 5600LS AFM Versatile AFM for Large and Small Samples Data Sheet Features and Benefits System Overview • Fully addressable and programmable 200 mm x 200 mm stage The Agilent 5600LS large-stage AFM is ready to deliver atomic-resolution results. The versatile 5600LS is the


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    5600LS 14/minute 5989-8819EN Piezo Ceramic plates microwave movement detection cantilever for AFM 8484 au 3d scanner PDF

    ic 555 use with metal detector

    Abstract: DVD optical pick-up assembly CD laser pickup assembly bolometer detector Light Detector laser
    Text: Introduction CHAPTER 01 1 Light and opto-semiconductors 1-1 Light 1-2 Opto-semiconductors 2 Opto-semiconductor lineup 3 Manufacturing process of opto-semiconductors 1 Introduction 1. Light and opto-semiconductors 1-1 Light Definition of light Light, like radio waves, is a type of electromagnetic wave.


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    Untitled

    Abstract: No abstract text available
    Text: SIR-563ST3F Sensors Infrared light emitting diode, top view type SIR-563ST3F The SIR-563ST3F is a GaAs infrared light emitting diode housed in clear plastic. This device has a high luminous efficiency and a 940nm peak wavelength suitable for silicon detectors. It has a wide radiation angle and is ideal for


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    SIR-563ST3F SIR-563ST3F 940nm 15deg. PDF

    Untitled

    Abstract: No abstract text available
    Text: SIR-320ST3F Sensors Infrared light emitting diode, top view type SIR-320ST3F The SIR-320ST3F is a GaAs infrared light emitting diode housed in clear plastic. This device has a high luminous efficiency and a 940nm spectrum suitable for silicon detectors. It is small and at the same time has a wide radiation angle,


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    SIR-320ST3F SIR-320ST3F 940nm 18deg. 940nm) PDF

    Untitled

    Abstract: No abstract text available
    Text: SIR-320ST3F Sensors Infrared light emitting diode, top view type SIR-320ST3F The SIR-320ST3F is a GaAs infrared light emitting diode housed in clear plastic. This device has a high luminous efficiency and a 940nm spectrum suitable for silicon detectors. It is small and at the same time has a wide radiation angle,


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    SIR-320ST3F SIR-320ST3F 940nm 18deg. 940nm) PDF

    Untitled

    Abstract: No abstract text available
    Text: SIR-56ST3F Sensors Infrared light emitting diode, top view type SIR-56ST3F The SIR-56ST3F is a GaAs infrared light emitting diode housed in clear plastic. This device has a high luminous efficiency and a 950nm spectrum suitable for silicon detectors. Low cost make it an ideal light source for household


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    SIR-56ST3F SIR-56ST3F 950nm PDF

    RPT-38PB3F

    Abstract: SIR-34ST3F
    Text: RPT-38PB3F Sensors Phototransistor, top view type RPT-38PB3F The RPT-38PB3F is a silicon planar phototransistor. Since it is molded in plastic with a visible light filter, there is almost no effect from stray light. It is particularly suited for use with a ROHM SIR-34ST3F infrared light emitting diode.


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    RPT-38PB3F RPT-38PB3F SIR-34ST3F PDF

    RPT-37PB3F

    Abstract: SIR-34ST3F
    Text: RPT-37PB3F Sensors Phototransistor, top view type RPT-37PB3F The RPT-37PB3F is a silicon planar phototransistor. Since it is molded in plastic with a visible light filter, there is almost no effect from stray light. It is particularly suited for use with a ROHM SIR-34ST3F infrared light emitting diode.


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    RPT-37PB3F RPT-37PB3F SIR-34ST3F PDF

    High Precision Thin Metal Film Measurement by Optical Transmission

    Abstract: No abstract text available
    Text: High Precision Thin Metal Film Measurement by Optical Transmission Kezia Cheng, Bing Hui Li Skyworks Solutions, Inc. 20 Sylvan Road, Woburn, MA, 01801, kezia.cheng@skyworksinc.com Keywords: optical transmission, thin metal film, absorbing film, enhancement mode pHEMT


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    Untitled

    Abstract: No abstract text available
    Text: Optical disc ICs Post amplifier applicable with 1- bit D / A converter BH3563FV The BH3563FV is a post amplifier applicable with 1-bit D / A converter for compact disc players. FApplications Portable CD players, etc. FFeatures 1 2-channel analog filter IC for 1-bit D / A converters.


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    BH3563FV BH3563FV PDF

    Untitled

    Abstract: No abstract text available
    Text: Optical disc ICs 4-channel BTL driver for CD players BA6797FP / BA6797FM The BA6797FP and BA6797FM are 4-channel BTL power drivers for CD players and each have an internal 5V regulator requires attached PNP transistor . Because the input stage of each driver channel connects to an operational amplifier,


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    BA6797FP BA6797FM BA6797FM 28-pin PDF

    RLD65PZB5

    Abstract: laser diode DVD 100mw
    Text: RLD65PZB5 Laser Diodes DVD-Record, High power red laser diode RLD65PZB5 The RLD65PZB5 is the red high-output semiconductor laser developed since it corresponded to the high speed needs of the optical pick up for DVD record. zExternal dimensions Unit : mm


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    RLD65PZB5 RLD65PZB5 240mW laser diode DVD 100mw PDF

    Photo diode TFK S 186 P

    Abstract: TFMS 4300 IR diodes TFK S 186 P TFK BPW 41 N diode TFMt 4300 tfmt 4300 ir detector IR diode TFK 186 tfms 4300 n mobile receptor tfm 5380 TFK S 186 P
    Text: Infrared Emitters and Detectors Data Book 1994 TELEFUNKEN Semiconductors TELEFUNKEN Semiconductors Table of Contents General Information 1. Selector guide 11 1.1 1.2 1.3 1.4 1.5 Alpha-numeric index IR emitters Detectors Photomodules IrDA-infrared data transmission


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    RLD65MZT2

    Abstract: No abstract text available
    Text: RLD65MZT2 Laser Diodes DVD-ROM, Combination red laser diode RLD65MZT2 For DVD-ROM, COMBINATION. The strained multi quantum well of active layer is optimized that realized low threshold current and the good temperature characteristic. !Applications DVD-ROM


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    RLD65MZT2 RLD65MZT2 PDF

    RLD78PZW4

    Abstract: No abstract text available
    Text: RLD78PZW4 Laser Diodes AlGaAs laser diode RLD78PZW4 The RLD78PZW4 is infrared laser diode high power output type pulse 230mW . This is the best for optical disk drive use, such as CD-R / RW. !Applications Max. x52 speed CD-R / RW drives. !Features 1) Absolute maximum optical power output : pulse 230mW


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    RLD78PZW4 RLD78PZW4 230mW) 230mW 784nm PDF

    phototransistor application lux meter

    Abstract: BPW21 APPLICATION NOTE BpW34 pad OSRAM ICM 10 BPW20RF BPW21R osram BPW34 osram 80085 smoke detector using phototransistor high speed uv phototransistor
    Text: VEMT4700 Vishay Semiconductors Silicon NPN Phototransistor FEATURES • Package type: surface mount • Package form: PLCC-3 • Dimensions L x W x H in mm : 3.5 x 2.8 x 1.75 • High photo sensitivity • High radiant sensitivity • Suitable for visible and near infrared radiation


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    VEMT4700 VSML3710 VEMT4700 J-STD-020 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 phototransistor application lux meter BPW21 APPLICATION NOTE BpW34 pad OSRAM ICM 10 BPW20RF BPW21R osram BPW34 osram 80085 smoke detector using phototransistor high speed uv phototransistor PDF

    Lenze

    Abstract: SIM-012ST
    Text: SIM-012ST Sensors High power chip sensor, side view type SIM-012ST The SIM-012ST is ultra small size and high power ohip sensor. Original technology, original structure and original Optical design enable to use Automatic moantinig machine, Reflow, ultra smallsize, High power.


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    SIM-012ST SIM-012ST Lenze PDF

    RLD65NZT1

    Abstract: No abstract text available
    Text: RLD65NZT1 Laser Diodes Barcode, printer red laser diode RLD65NZT1 For Barcode, Laser Printer. The product is the single power supply drive type which realized low threshold current and the good temperature characteristic. !Applications Barcode readers Printers


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    RLD65NZT1 RLD65NZT1 PDF

    multilayer lithography ic fabrication

    Abstract: Jewell Instruments
    Text: EUV Lithography—The Successor to Optical Lithography? John E. Bjorkholm Advanced Lithography Department, Technology and Manufacturing Group, Santa Clara, CA. Intel Corporation Index words: EUV lithography, lithography, microlithography Abstract This paper discusses the basic concepts and current state


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    Photo diode TFK S 186 P

    Abstract: IR diodes TFK S 186 P TFK S153P TFK BPW 41 N IR diode TFK 186 TFK BPW 20 TFK S 186 P monocrystalline solar cell power crest audio pro 8200 GERMANIUM phototransistor
    Text: Infrared Emitters and Detectors Data Book 1997 Contents General Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Alphanumeric Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .


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    S288P

    Abstract: PW20R light dependent resistor circuit U6792 Near - Infrared Emitting Diod es BPW 23 nf photoconductive cells characteristic
    Text: Tem ic Semiconductors Physics and Technology Emitters Materials Infrared emitting diodes IREDs can be produced from a range of different III-V compounds. Unlike the elemen­ tal semiconductor silicon. the compound III-V semiconductors consists of two different elements of


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