SILICON ON INSULATOR Search Results

Inselek

Abstract: Boeing NOW JERSEY SEMICONDUCTOR PHYSICS Mueller Electric Company soi switches 2003 soi switches cmos transistor 1972
Contextual Info: W hat is Silicon-on-Sapphire? Silicon-on-Sapphire SOS is one of the siliconon-insulator (SOI) semiconductor manufacturing technologies. In fact, SOS is the first of the SOI technologies. SOS is formed by depositing a thin layer of silicon onto a sapphire wafer at high temperature.

stiffness diaphragm pressure sensor

Abstract: diaphragm TP301 tunnel sensor Force Transducer sensitivity resolution
Contextual Info: Miniature silicon-on-insulator pressure transducer for absolute pressure measurement at 260˚C TP 301 Model 8540 miniature pressure transducer for absolute pressure measurement at 260˚C Abstract A miniature, silicon-on-insulator absolute pressure The present paper will describe a pressure transducer

MPC7448

Abstract: MPC7447 MPC7448 MPC7447 MPC7447A sfx2
Contextual Info: High-Performance Processors MPC7448 Host Processor Built on Power Architecture Technology The MPC7448 is the first discrete MPC7448 Block Diagram high-performance processor, built on Power Architecture™ technology, manufactured on 90 nanometer silicon-on-insulator SOI

BP050-0024UJ03

Abstract: F923 PE4309 acg-6
Contextual Info: Product Specification PE4309 50 Ω RF Digital Attenuator 6-bit, 31.5 dB, DC-4.0 GHz Product Description The PE4309 is manufactured on Peregrine’s UltraCMOS process, a patented variation of silicon-on-insulator SOI technology on a sapphire substrate, offering the performance

PE4309

Abstract: BP050-0024UJ03
Contextual Info: Preliminary Specification PE4309 50 Ω RF Digital Attenuator 6-bit, 31.5 dB, DC-4.0 GHz Product Description The PE4309 is manufactured on Peregrine’s UltraCMOS process, a patented variation of silicon-on-insulator SOI technology on a sapphire substrate, offering the performance

BP050-0024UJ03

Abstract: 20 pins qfn 4x4 footprint
Contextual Info: Product Specification PE4309 50 Ω RF Digital Attenuator 6-bit, 31.5 dB, DC-4.0 GHz Product Description The PE4309 is manufactured on Peregrine’s UltraCMOS process, a patented variation of silicon-on-insulator SOI technology on a sapphire substrate, offering the performance

Contextual Info: Product Specification PE4309 50 RF Digital Attenuator 6-bit, 31.5 dB, DC-4.0 GHz Product Description The PE4309 is manufactured on Peregrine’s UltraCMOS process, a patented variation of silicon-on-insulator SOI technology on a sapphire substrate, offering the performance

Contextual Info: Product Specification PE4309 50 Ω RF Digital Attenuator 6-bit, 31.5 dB, DC-4.0 GHz Product Description The PE4309 is manufactured on Peregrine’s UltraCMOS process, a patented variation of silicon-on-insulator SOI technology on a sapphire substrate, offering the performance

SAE J2411

Abstract: rain sensor BOSCH for car application steering controlled headlight report ecu Bosch ICs car ecu microprocessors 24 v temic ecu list of sensors used in bmw car BOSCH ECU microcontroller microprocessors used in car ecus siemens ecu VDO
Contextual Info: Semiconductors Philips - the vital link in the interconnected car Semiconductors Advancing silicon for automotive processes Connecting flexible intelligence in the car Philips’ SOI Silicon-on-Insulator technology is the Meeting the comfort, convenience, safety and security demands of

MPC7448

Abstract: MPC7447 MPC7448 MPC7447 MPC7447A
Contextual Info: High-Performance Processors MPC7448 PowerPC Processor The MPC7448 is the first discrete high- MPC7448 POWERPC® PROCESSOR BLOCK DIAGRAM ® performance PowerPC processor manufactured on 90 nanometer silicon-on-insulator SOI Completion Instruction Fetch

bsim3

Abstract: IMD2 transistor metal oxide in capacitor "X-Fab" Core cell library transistor ag metal sheet thickness sensor 45 nm library breakdown gate oxide
Contextual Info: 1.0 µm SOI Process 1.0 µm Silicon-On-Insulator Technology 1.0 µm Non-fully Depleted SOI Technology with: Applications 1000 nm Box Oxide - Dielectric Isolated Mixed-Signal multi voltage systems 250 nm Active Silicon 25 nm Gate Oxide Thickness - High Temperature

Contextual Info: Product Specification PE42650A SP3T High Power UltraCMOS RF Switch 30 MHz - 1000 MHz Product Description ig de s The PE42650A is manufactured on Peregrine’s UltraCMOS™ process, a patented variation of silicon-on-insulator SOI technology on a sapphire substrate, offering the performance

Contextual Info: Product Specification PE4305 50 Ω RF Digital Attenuator 5-bit, 15.5 dB, DC – 4.0 GHz Product Description de s ig The PE4305 is manufactured on Peregrine’s UltraCMOS process, a patented variation of silicon-on-insulator SOI technology on a sapphire substrate, offering the performance

HXSRD01

Abstract: 10Gb trivor smd transistor M21 Lanes PRBS31 w21 transistor smd 8B10B S150 honeywell material spec microcircuit w18 smd transistor
Contextual Info: HXSRD01 Trivor SERDES Quad Redundant Transceiver Radiation Hardened Features • Fabricated on S150 Silicon On Insulator SOI CMOS ■ ■ 150 nm Process (Leff = 110 nm) 4 Channel (Quad) Transceiver with Redundant Transmitters ■ Channel Data Rates to 3.1875Gb/s

Contextual Info: CPC7220 Low Charge Injection, 8-Channel High Voltage Analog Switch INTEGRATED CIRCUITS DIVISION Features Description • Processed with BCDMOS on SOI Silicon On Insulator • Flexible High Voltage Supplies up to VPP-VNN=200V • DC to 10MHz Analog Signal Frequency

Contextual Info: CPC7232 8-Channel HV Analog Switch with Built-in Bleeder Resistors INTEGRATED CIRCUITS DIVISION Features Description • Processed with BCDMOS on SOI Silicon on Insulator • Flexible High Voltage Supplies up to VPP-VNN=200V • Internal Output Bleeder Resistors

CPC7220

Abstract: CPC7220W CPC7221
Contextual Info: CPC7220/CPC7221 Low Charge Injection 8-Channel High Voltage Analog Switch Description • Processed with BCDMOS on SOI Silicon On Insulator • DC to 10MHz analog signal frequency • Surface mount package available • Low quiescent power dissipation (< 1µA typical)

K0220

Abstract: b0930 lqfp48 land pattern K1160 CPC7232
Contextual Info: CPC7232 8-Channel HV Analog Switch with Built-in Bleeder Resistors INTEGRATED CIRCUITS DIVISION PRELIMINARY Features Description • Processed with BCDMOS on SOI Silicon on Insulator • Flexible High Voltage Supplies up to VPP-VNN=200V • Internal Output Bleeder Resistors

CPC7220

Abstract: CPC7220W
Contextual Info: CPC7220 Low Charge Injection 8-Channel High Voltage Analog Switch Features Description • Processed with BCDMOS on SOI Silicon On Insulator • DC to 10MHz analog signal frequency • Surface mount package available • Low quiescent power dissipation (< 1µA typical)

Contextual Info: CPC7601 Low Charge Injection, 16-Channel High Voltage Analog Switch INTEGRATED CIRCUITS DIVISION Features Description • Processed with BCDMOS on SOI Silicon On Insulator • Flexible High Voltage Supplies up to VPP-VNN=200V • DC to 10MHz Analog Signal Frequency

silicon on insulator

Contextual Info: CPC7220 Low Charge Injection 8-Channel High Voltage Analog Switch Features Description • Processed with BCDMOS on SOI Silicon On Insulator • DC to 10MHz analog signal frequency • Surface mount package available • Low quiescent power dissipation (< 1µA typical)

Contextual Info: Honeywell Aerospace Electronics HX6356 32K x 8 STATIC RAM—SOI FEATURES RADIATION OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.75 |j.m Process (Left= 0.6 (im) • Listed On SMD# 5962-95845 • Total Dose Hardness through 1x106rad(S i02)

Contextual Info: HMXMUX01 8-Channel Analog Multiplexer Radiation Hardened Features ▪ Fabricated on Silicon On Insulator SOI CMOS Technology ▪ SOI4 Process (Leff = 0.8 um) ▪ Total Dose Hardness 300k rad (Si) ▪ Dose Rate Upset Hardness 1x109 rad(Si)/s ▪ Dose Rate Survivability

Contextual Info: Honeywell Military & Space Products 5 MEGABIT MEMORY MODULE HX84050 RADIATION OTHER • • Listed on SMD #5962-96840 Fabricated with RICMOS IV Silicon on Insulator SOI 0.75 jam Process (Leff = 0.6 ^m) • Total Dose Hardness through 1x106 rad (S i0 2)