SILICON MICRO-X CERAMIC Search Results

2SC2149

Abstract: 2SC2148 micro X
Contextual Info: DATA SHEET SILICON TRANSISTORS 2SC2148, 2SC2149 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR DESCRIPTION The 2SC2148, 2SC2149 are economical microwave transistors PACKAGE DIMENSIONS encapsulated into new hermetic stripline packages, "micro X".

rf microwave amplifier with S Parameters

Abstract: BA2 capacitor BA11 02238
Contextual Info: BIPOLARICS, INC. Part Number BA2 CASCADABLE SILICON BIPOLAR MONOLITHIC MICROWAVE INTEGRATED AMPLIFIER PRODUCT SPECIFICATION FEATURES: • Wide 3dB bandwidth - DC to 2.7 GHz in ceramic Micro-X - DC to 2.6 GHz in plastic packages • Suitable for 7V systems

ba7 transistor

Abstract: MMIC Amplifier Micro-X Bipolarics BA11 sot-143 rf amplifier
Contextual Info: BIPOLARICS, INC. Part Number BA7 CASCADABLE SILICON BIPOLAR MONOLITHIC MICROWAVE INTEGRATED AMPLIFIER PRODUCT SPECIFICATION FEATURES: • Wide 3dB bandwidth - DC to 2.4 GHz in ceramic Micro-X - DC to 2.0 GHz in plastic packages • Suitable for 5V systems

MMIC Amplifier Micro-X

Abstract: GHZ micro-X Package BA11 rf microwave amplifier with S Parameters 03-198
Contextual Info: BIPOLARICS, INC. Part Number BA3 CASCADABLE SILICON BIPOLAR MONOLITHIC MICROWAVE INTEGRATED AMPLIFIER PRODUCT SPECIFICATION FEATURES: • Wide 3dB bandwidth - DC to 2.7 GHz in ceramic Micro-X - DC to 2.6 GHz in plastic packages • Suitable for 7V systems

BA4 amplifier

Abstract: ba4 RF amplifier
Contextual Info: BIPOLARICS, INC. Part Number BA4 CASCADABLE SILICON BIPOLAR MONOLITHIC MICROWAVE INTEGRATED AMPLIFIER PRODUCT SPECIFICATION FEATURES: • Wide 3dB bandwidth - DC to 3.8 GHz in ceramic Micro-X - DC to 3.6 GHz in plastic packages • Suitable for 7V systems

Contextual Info: 2P E X 4R SM5103 SILICON MICROSTRUCTURES DIVISION Low Pressure Die October 1997-1 DESCRIPTION The SM5103 is a silicon micro-machined, piezoresistive low pressure sensing chip. These devices are available in full-scale ranges from 0,3 to 3.0 psi and are ideal for

MA4T64500

Abstract: 4558 MA4T64535 557 sot143 micro X
Contextual Info: Silicon Low Noise Transistors Silicon Bipolar High fT Low Noise Microwave Transistors M A 4T64500 Series Features • fT to 9 GHz MA4T64535 Micro-X Low Noise Figure I •High Associated Gain ■Hermetic and Surface Mount Packages Available + ■Can be Screened to JANTX, JANTXV

RF TRANSISTOR NPN MICRO-X

Abstract: HXTR-5103 microwave amplifier
Contextual Info: HXTR 5103 NPN SILICON RF TRANSISTOR DESCRIPTION: The HXTR 5103 is a Common Emitter Device Designed for Class A Microwave Amplifier Applications up to 4.0 GHz. PACKAGE STYLE 85 MIL CERAMIC MICRO-X FEATURES INCLUDE: • High Gain • Gold Metallization • Emitter Ballasting

2SC3357

Abstract: 2sc3355 NE8563S
Contextual Info: NPN SILICON HIGH FREQUENCY TRANSISTOR NE856 SERIES FEATURES_ • HIGH GAIN BANDWIDTH PRODUCT: fT = 7 GHz • LOW NOISE FIGURE: 1.1 dB at 1 GHz • HIGH COLLECTOR CURRENT: 100 mA • LOW COST 00 CHIP 35 (MICRO-X) DESCRIPTION f The NE856 series of NPN epitaxial silicon transistors is

MMT2857

Abstract: MMCM2857 case 176
Contextual Info: MMT2857 silicon MMCM2857 (CERAMIC PACKAGE) NPN silicon annular micro-miniature transistor designed for high-gain, low-noise amplifier, oscillator and mixer applications. M A X IM U M R A T IN G S Symbol Rating v C o lle c to r -E m itte r V oltage C o lle c to r-B a s e V oltage

BA 5982

Abstract: 143r 0709s nec d 882 p transistor transistor NEC D 882 p 7m 0880 IC NEC NE85635 ceramic micro-X package 015e1
Contextual Info: NPN SILICON HIGH FREQUENCY TRANSISTOR NE856 SERIES FEATURES_ • HIGH GAIN BANDWIDTH PRODUCT: fT = 7 GHz • LOW NOISE FIGURE: 1.1 dB at 1 GHz • HIGH COLLECTOR CURRENT: 100 mA • HIGH RELIABILITY METALLIZATION • LOW COST 35 MICRO-X

MSA-0635

Contextual Info: 0AVANTEK »s»“ MODAMP Cascadable Silicon Bipolar Monolithic Microwave Integrated Circuit Amplifiers Avantek 35 micro-X Package1 Features • • • • Cascadable 50 n Gain Block Low Operating Voltage 3.5 V typical Vd 3 dB Bandwidth: DC to 0.9 GHz

m37710

Abstract: M37710M4BXXXFP M37710M8L
Contextual Info: MITSUBISHI MICROCOMPUTERS P r e U M 'N * b Y M 3 7 7 1 0 M 8 L X X X H P SINGLE-CHIP 1 6-B IT CM OS M ICROCOMPUTER DESCRIPTION The M37710M8LXXXHP is a single-chip 16-bit micro­ computer designed with high-performance CMOS silicon gate technology. This is housed in a small 80-pin plastic

MSA-0436

Abstract: MSA-0436-BLK MSA-0436-TR1 MSA-0436-TR1G
Contextual Info: Agilent MSA-0436 Cascadable Silicon Bipolar MMIC Amplifiers Data Sheet Features • Cascadable 50 Ω Gain Block • 3 dB Bandwidth: DC to 3.8 GHz Description • 12.5 dBm Typical P1 dB at 1.0 GHz 36 micro-X Package • 8.5 dB Typical Gain at 1.0 GHz The MSA-0436 is a high performance silicon bipolar Monolithic

avantek microwave

Abstract: Avantek rf amplifier MSA-0335 Avantek, Inc. mmic s5 S478
Contextual Info: AVANTEK MSA-0335 MODAMP Cascadable Silicon Bipolar Monolithic Microwave Integrated Circuit Amplifiers Avantek 35 micro-X Package1 Features • • • • • • GROUND Cascadable 50 Q. Gain Block 3 dB Bandwidth: DC to 2.7 GHz 12.0 dB typical Gain at 1.0 GHz

MSA-0335

Contextual Info: m HEW LETT MSA-0335, -0336 MODAMP Cascadable Silicon Bipolar Monolithic Microwave Integrated Circuit Amplifiers PACKARD 35 micro-X Package1 Features • Cascadable 50 Q Gain Block • 3 dB Bandwidth: DC to 2.7 GHz • 12.0 dB typical Gain at 1.0 GHz •

Contextual Info: AVANTEK MSA-0335 MODAMP Cascadable Silicon Bipolar Monolithic Microwave Integrated Circuit Amplifiers Avantek 35 micro-X Package1 Features • • • • • • Cascadable 50 Q Gain Block 3 dB Bandwidth: DC to 2.7 GHz 12.0 dB typical Gain at 1.0 GHz

RW mmic

Contextual Info: evi HEW LETT PACKARD MSA-0635, -0636 MODAMP Cascadable Silicon Bipolar Monolithic Microwave Integrated Circuit Amplifiers 35 micro-X Package1 Features • Cascadable 50 C2 Gain Block • Low Operating Voltage 3.5 V typical V« • 3 dB Bandwidth: DC to 0.9 GHz

transistor NEC D 882

Abstract: 56E-18 0107 NA SILICON TRANSISTORS transistor Bf 966 XO 202 na tq55
Contextual Info: NPN SILICON HIGH FREQUENCY TRANSISTOR NE856 SERIES FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fr = 7 GHz • LOW NOISE FIGURE: 1.1 dB at 1 GHz • HIGH COLLECTOR CURRENT: 100 mA • HIGH RELIABILITY METALLIZATION 35 MICRO-X 00 (CHIP) • LOW COST DESCRIPTION

AT-42035

Abstract: AT-42035G S21E
Contextual Info: AT-42035 Up to 6 GHz Medium Power Silicon Bipolar Transistor Data Sheet Description Avago’s AT-42035 is a general purpose NPN bipolar transistor that offers excellent high ­frequency performance. The AT‑42035 is housed in a cost effective surface mount 100 mil micro-X

BJT BF 331

Abstract: NEC NE85635 2SC4226 2SC5006 2SC5011 NE856 NE85600 NE85618 NE85619 NE85630
Contextual Info: NPN SILICON HIGH FREQUENCY TRANSISTOR NE856 SERIES FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 7 GHz • LOW NOISE FIGURE: 1.1 dB at 1 GHz • HIGH COLLECTOR CURRENT: 100 mA • HIGH RELIABILITY METALLIZATION • LOW COST 00 CHIP 35 (MICRO-X) 32 (TO-92)

NE856

Abstract: 2sc3355 Micro-X Marking 865 NE AND micro-X NE85632 NEC NE85635 2SC4226 2SC5006 2SC5011 NE85600
Contextual Info: NPN SILICON HIGH FREQUENCY TRANSISTOR NE856 SERIES FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 7 GHz E B • LOW NOISE FIGURE: 1.1 dB at 1 GHz • HIGH COLLECTOR CURRENT: 100 mA • HIGH RELIABILITY METALLIZATION 35 MICRO-X 00 (CHIP) • LOW COST rs e

MSA-0235

Abstract: Avantek UT Avantek rf amplifier MODAMP Avantek amplifier ut Avantek, Inc 72707 35 micro-X ceramic Package mmic
Contextual Info: Qavantek MSA-0235 MODAMP Cascadable Silicon Bipolar Monolithic Microwave Integrated Circuit Amplifiers Avantek 35 micro-X Package1 Features • • • • • Cascadable 50 Q Gain Block 3 dB Bandwidth: DC to 2.7 GHz 12.0 dB typical Gain at 1.0 GHz Unconditionally Stable k>1

Contextual Info: m HEW LETT PACKARD MSA-0235, -0236 MODAMP Cascadable Silicon Bipolar Monolithic Microwave Integrated Circuit Amplifiers 35 micro-X Package1 Features • • • • • Cascadable 50 Q. Gain Block 3 dB Bandwidth: DC to 2.7 GHz 12.0 dB typical Gain at 1.0 GHz