Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    SILICON DIOXIDE Search Results

    SILICON DIOXIDE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MX0912B251Y Rochester Electronics LLC MX0912B251Y - NPN Silicon RF Power Transistor (Ampleon Die) Visit Rochester Electronics LLC Buy
    CA3046 Rochester Electronics LLC RF Small Signal Bipolar Transistor, 0.05A I(C), 5-Element, Very High Frequency Band, Silicon, NPN, MS-001AA, MS-001AA, 14 PIN Visit Rochester Electronics LLC Buy
    P104 Coilcraft Inc Silicon Controlled Rectifier, Visit Coilcraft Inc
    5962-8757701RA Renesas Electronics Corporation Microcircuit, CMOS, Octal Bus Transceiver, Monolithic Silicon Visit Renesas Electronics Corporation
    HXT45430-DNU Renesas Electronics Corporation 112Gb/s PAM4 Silicon Photonic Modulator Driver Visit Renesas Electronics Corporation

    SILICON DIOXIDE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Resistors Make Possible Wire Bondable Wire Capacitor Bondable Chip Chip Capacitor WBC Capacitor Series WBC Capacitor Series Nitride dielectric Silicon Dioxide/Silicon Capacitance range Nitride from 10pF to 1000pF • Silicon Dioxide/Silicon dielectric Silicon substrate


    Original     		PDF 1000pF 2011/65/EU

    IC 8088

    Abstract: MA4T64535 "Semiconductor Master" thurlby power supply MA4T645 micro X ODS-512 MA4T64500
    Text: Preliminary Specification High Reliability Semiconductor Silicon Bipolar Low Noise Transistor V1.00 ODS 512 Outline Features x x x x ML4T645-S-512 fT to 9 GHz Low Noise Figure Silicon Dioxide and Silicon Dioxide Passivation Space Qualified Description The ML4T645 is a NPN small signal silicon bipolar transistor, well


    Original     		PDF ML4T645-S-512 ML4T645 IC 8088 MA4T64535 "Semiconductor Master" thurlby power supply MA4T645 micro X ODS-512 MA4T64500

    AT6021

    Abstract: No abstract text available
    Text: AT6021 SILICON ABRUPT JUNCTION TUNING VARACTOR DESCRIPTION: The AT6021 is an Epitaxial Silicon Abrupt Junction Microwave Tuning Varactor. This Device is Passivated With Silicon Dioxide Which Results in Very Low Leakage Current. The Capacitance Voltage Relationship


    Original     		PDF AT6021 AT6021 CT0/CT60 CT8/CT60

    AT6020

    Abstract: No abstract text available
    Text: AT6020 SILICON ABRUPT JUNCTION TUNING VARACTOR PACKAGE STYLE 15 DESCRIPTION: The AT6020 is an Epitaxial Silicon Abrupt Junction Microwave Tuning Varactor. This Device is Passivated With Silicon Dioxide Which Results in Very Low Leakage Current. The Capacitance Voltage Relationship


    Original     		PDF AT6020 AT6020

    C0303

    Abstract: C0505 C0202 C0404 C0606 capacitor 7900
    Text: Wire Bondable Chip Capacitor WBC Capacitor Series • Silicon Dioxide/Silicon Nitride dielectric • Capacitance range from 10pF to 1000pF • Silicon substrate with gold or aluminum backing IRC’s wire-bondable chip capacitors are based on the successful


    Original     		PDF 1000pF MIL-STD-883 C0606 C0404 C0303 C0505 C0202 1000pF; 220pF; C0303 C0505 C0202 C0404 C0606 capacitor 7900

    AT6019M

    Abstract: No abstract text available
    Text: AT6019M SILICON ABRUPT JUNCTION TUNING VARACTOR DESCRIPTION: PACKAGE STYLE 15 The AT6019M is an Epitaxial Silicon Abrupt Junction Microwave Tuning Varactor. This Device is Passivated With Silicon Dioxide Which Results in Very Low Leakage Current. The Capacitance Voltage Relationship


    Original     		PDF AT6019M AT6019M

    AT6017-10

    Abstract: No abstract text available
    Text: AT6017-10 SILICON ABRUPT JUNCTION TUNING VARACTOR DESCRIPTION: PACKAGE STYLE 10 The AT6017-10 is an Epitaxial Silicon Abrupt Junction Microwave Tuning Varactor. This Device is Passivated With Silicon Dioxide Which Results in Very Low Leakage Current. The Capacitance Voltage Relationship


    Original     		PDF AT6017-10 AT6017-10

    AT9019-10

    Abstract: No abstract text available
    Text: AT9019-10 SILICON ABRUPT JUNCTION TUNING VARACTOR DESCRIPTION: PACKAGE STYLE 10 The AT9019-10 is an Epitaxial Silicon Abrupt Junction Microwave Tuning Varactor. This Device is Passivated With Silicon Dioxide Which Results in Very Low Leakage Current. The Capacitance Voltage Relationship


    Original     		PDF AT9019-10 AT9019-10

    AT6019-10

    Abstract: No abstract text available
    Text: AT6019-10 SILICON ABRUPT JUNCTION TUNING VARACTOR DESCRIPTION: PACKAGE STYLE 10 The AT6019-10 is an Epitaxial Silicon Abrupt Junction Microwave Tuning Varactor. This Device is Passivated With Silicon Dioxide Which Results in Very Low Leakage Current. The Capacitance Voltage Relationship


    Original     		PDF AT6019-10 AT6019-10

    AT9017-10

    Abstract: No abstract text available
    Text: AT9017-10 SILICON ABRUPT JUNCTION TUNING VARACTOR DESCRIPTION: PACKAGE STYLE 10 The AT9017-10 is an Epitaxial Silicon Abrupt Junction Microwave Tuning Varactor. This Device is Passivated With Silicon Dioxide Which Results in Very Low Leakage Current. The Capacitance Voltage Relationship


    Original     		PDF AT9017-10 AT9017-10

    Untitled

    Abstract: No abstract text available
    Text: NC Series www.vishay.com Vishay Electro-Films Thin Film Single Value Chip and Wire Capacitors FEATURES • Wire bondable • Small size: 0.020 inches square to 0.060 inches square • Substrate: Silicon with gold backing • Dielectric: Silicon dioxide/silicon nitride


    Original     		PDF 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    ct60

    Abstract: symbol of varactor diode and equivalent circuit varactor diode notes "Tuning Varactor" varactor APPLICATION AT6021M JC500
    Text: AT6021M SILICON ABRUPT JUNCTION TUNING VARACTOR DESCRIPTION: PACKAGE STYLE 15 The ASI AT6021M is an Epitaxial Silicon Abrupt Junction Microwave Tuning Varactor. This Device is Passivated With Silicon Dioxide Which Results in Very Low Leakage Current. The Capacitance Voltage Relationship


    Original     		PDF AT6021M AT6021M CT0/CT60 CT8/CT60 ct60 symbol of varactor diode and equivalent circuit varactor diode notes "Tuning Varactor" varactor APPLICATION JC500

    C0303

    Abstract: c0505 361 J capacitor
    Text: Wire Bondable Chip Capacitor IRC Advanced Film Division WBC Series • Silicon substrate with gold backing • Silicon Dioxide/Silicon Nitride dielectric • Capacitance range from 10pF to 1000pF IRC’s wire-bondable chip capacitors are based on the successful


    Original     		PDF 1000pF MIL-STD-883 C0404 C0606 C0303 C0505 C0202 1000pF; 220pF; c0505 361 J capacitor

    Untitled

    Abstract: No abstract text available
    Text: NC Series www.vishay.com Vishay Electro-Films Thin Film Single Value Chip and Wire Capacitors FEATURES • Wire bondable • Small size: 0.020 inches square to 0.060 inches square • Substrate: Silicon with gold backing • Dielectric: Silicon dioxide/silicon nitride


    Original     		PDF 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: NC Series Vishay Electro-Films Thin Film Single Value Chip and Wire Capacitors FEATURES Product may not be to scale • Small size: 0.020 to 0.060 inches square • Substrate: silicon with gold backing • Dielectric: silicon dioxide/silicon nitride CHIP CAPACITORS


    Original     		PDF MIL-STD-883. 08-Apr-05

    Untitled

    Abstract: No abstract text available
    Text: Thin Film Single-Value Chip and Wire Capacitors FEATURES • Die sizes: 0.020 x 0.020 to 0.060 x 0.060 • Capacitance values: 0.50 pF to 1000 pF • Tightest tolerance: 2.5% • Dielectrics: Silicon dioxide MOS or silicon dioxide/silicon nitride (MNOS),


    Original     		PDF

    Thin Film Capacitors

    Abstract: No abstract text available
    Text: NC Series Vishay Electro-Films Thin Film Single Value Chip and Wire Capacitors FEATURES Product may not be to scale • Wire bondable • Small size: 0.020 to 0.060 inches square • Substrate: Silicon with gold backing • Dielectric: Silicon dioxide/silicon nitride


    Original     		PDF 18-Jul-08 Thin Film Capacitors

    ncd62

    Abstract: No abstract text available
    Text: NC Series Vishay Electro-Films Thin Film Single Value Chip and Wire Capacitors FEATURES Product may not be to scale • Wire bondable • Small size: 0.020 to 0.060 inches square • Substrate: Silicon with gold backing • Dielectric: Silicon dioxide/silicon nitride


    Original     		PDF 08-Apr-05 ncd62

    IMPATT

    Abstract: No abstract text available
    Text: RA45200 Series Silicon Abrupt Junction runing Varactors Features 30 Description Fhe MA45200 series of silicon abrupt junction tuning iaractors has been designed to obtain the highest Q ~ossible.Each- device in this series has a high density silicon dioxide passivation which results in exceptionally


    Original     		PDF RA45200 MA45200 IMPATT

    NC-AA

    Abstract: NCEE10
    Text: NC Series Vishay Electro-Films Thin Film Single Value Chip and Wire Capacitors FEATURES Product may not be to scale • Wire bondable • Small size: 0.020 inches square to 0.060 inches square • Substrate: Silicon with gold backing • Dielectric: Silicon dioxide/silicon nitride


    Original     		PDF 18-Jul-08 NC-AA NCEE10

    Untitled

    Abstract: No abstract text available
    Text: TUNING VARACTORS 45-VOLT SILICON TUNING VARACTORS DESCRIPTION The GC1600 series tuning varactors are silicon abrupt junction devices. They offer the highest Q and lowest resistance available in 45 volt tuning diodes. A unique silicon dioxide passivation process assures


    OCR Scan     		PDF 45-VOLT GC1600 GC-1600

    Untitled

    Abstract: No abstract text available
    Text: TUNING VARACTORS 60-VOLT SILICON TUNING VARACTORS DESCRIPTION 100 The GC1700 series tuning varactors are silicon abrupt junction devices. They offer the highest Q and lowest resistance available in 60 volt tuning diodes. A unique silicon dioxide passivation process assures


    OCR Scan     		PDF 60-VOLT GC1700

    transistor L44

    Abstract: L44 TRANSISTOR MA4T645
    Text: Preliminary Specification M an A M P com pany High Reliability Semiconductor Silicon Bipolar Low Noise Transistor Features • • • • ML4T645-S-512 ODS 512 Outline fT to 9 GHz Low Noise Figure Silicon Dioxide and Silicon Dioxide Passivation Space Qualified


    OCR Scan     		PDF ML4T645-S-512 ML4T645 transistor L44 L44 TRANSISTOR MA4T645

    Untitled

    Abstract: No abstract text available
    Text: 90-VOLT SILICON TUNING VARACTORS DESCRIPTION 100 The GC1800 series tuning varactors are silicon abrupt junction devices. They offer the highest Q and lowest resistance available in 90 volt diodes. A unique silicon dioxide passivation process assures greater stability, reliability, and low leakage currents at


    OCR Scan     		PDF 90-VOLT GC1800