SILICON DIODE SWITCHING DIODE 700V Search Results

NTE2635

Abstract: NTE263
Contextual Info: NTE2635 Silicon NPN Transistor Horizontal Deflection w/Internal Damper Diode Description: The NTE2635 is an enhanced performance, new generation, high–voltage, high–speed switching NPN transistor with an integrated damper diode in a full–pack envelope intended for use in horizontal

using of damper in Horizontal Output Transistor

Abstract: BU2508D
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BU2508D DESCRIPTION •Collector-Emitter Sustaining Voltage: VCEO SUS = 700V (Min) ·High Switching Speed ·Built-in Damper Diode APPLICATIONS ·Designed for use in horizontal deflection circuits of

TRANSISTOR bu2508df

Abstract: BU2508DF BU2508DF equivalent NPN Transistor 1500V TV power transistor datasheet Silicon Diode Switching Diode 700v using of damper in Horizontal Output Transistor 700 v power transistor
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BU2508DF DESCRIPTION •Collector-Emitter Sustaining Voltage: VCEO SUS = 700V (Min) ·High Switching Speed ·Built-in Damper Diode APPLICATIONS ·Designed for use in horizontal deflection circuits of

BU2508DX

Abstract: transistor bu2508dx BU2508Dx equivalent using of damper in Horizontal Output Transistor NPN Transistor 1500V
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BU2508DX DESCRIPTION •Collector-Emitter Sustaining Voltage: VCEO SUS = 700V (Min) ·High Switching Speed ·Built-in Damper Diode APPLICATIONS ·Designed for use in horizontal deflection circuits of

diode 3A 1500V

Abstract: bu2506dx using of damper in Horizontal Output Transistor
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BU2506DX DESCRIPTION •Collector-Emitter Sustaining Voltage: VCEO SUS = 700V (Min) ·High Switching Speed ·Built-in Damper Diode APPLICATIONS ·Designed for use in horizontal deflection circuits of

NPN Transistor 1.5A 700V

Contextual Info: NTE2318 Silicon NPN Transistor High Voltage, High Speed Switch Description: The NTE2318 is a high–voltage, high–speed, switching NPN transistor with an internal damper diode in a TO218 type package. This device is specifically designed for use in large screen color deflection

Contextual Info: SSM03N70F,I N-CHANNEL ENHANCEMENT-MODE POWER MOSFET Dynamic dv/dt rating D Repetitive-avalanche rated Fast switching G Simple drive requirement BVDSS 600/650/700V R DS ON 3.6Ω ID 3.3A S Description The SSM03N70 series are specially designed as main switching devices for universal

Contextual Info: SSM03N70P,R N-CHANNEL ENHANCEMENT-MODE POWER MOSFET Dynamic dv/dt rating BV DSS 600/650/700V D Repetitive-avalanche rated Fast switching G Simple drive requirement R DS ON 3.6Ω ID 3.3A S Description The SSM03N70 series are specially designed as main switching devices for

04n70bf

Abstract: 04N70BF-H SSM04N70BGF-H 04N70 Transistor 04N70BF 04n70b marking code C2 diode marking codes transistors SSs SSM04 ssm04n70bgfh
Contextual Info: SSM04N70BGF-H N-channel Enhancement-mode Power MOSFET PRODUCT SUMMARY BVDSS 700V R DS ON 2.4Ω ID 4A DESCRIPTION The SSM04N70BGF-H achieves fast switching performance with low gate charge without a complex drive circuit. It is suitable for high voltage applications such as AC/DC

Contextual Info: SSM04N70BP,R N-CHANNEL ENHANCEMENT-MODE POWER MOSFET Low gate-charge D Simple drive requirement Fast switching BV DSS 600/650/700V R DS ON 2.4Ω 4A ID G S Description The SSM04N70BR is in a TO-262 package, which is widely used for G D commercial and industrial applications, and is well suited for universal

700v 5A mosfet

Abstract: marking codes transistors SSs ssm03n70gp-h 03n7
Contextual Info: SSM03N70GP-H N-channel Enhancement-mode Power MOSFET PRODUCT SUMMARY BVDSS 700V R DS ON 4.4Ω ID 2.5A DESCRIPTION The SSM03N70GP-H achieves fast switching performance with low gate charge without a complex drive circuit. It is suitable for high voltage applications such as AC/DC

Contextual Info: TSC148D High Voltage Fast-Switching NPN Power Transistor TO-220 ITO-220 TO-263-2L 2 D PAK PRODUCT SUMMARY Pin Definition: 1. Base 2. Collector 3. Emitter BVCEO 400V BVCBO 700V IC VCE(SAT) Features ● 8A 1.5V @ IC / IB = 5A / 1A Block Diagram Build-in Free-wheeling Diode Makes Efficient Antisaturation Operation

TRANSISTOR K 1507

Abstract: 1348 transistor TRANSISTOR D 1785 silicon power diode to263 3A fast-switching diode HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR 700v 1a marking code 0632 Transistor 1507 POWER TRANSISTOR TO-220
Contextual Info: TSC148D High Voltage Fast-Switching NPN Power Transistor TO-220 ITO-220 TO-263 2 D PAK PRODUCT SUMMARY Pin Definition: 1. Base 2. Collector 3. Emitter BVCEO 400V BVCBO 700V IC VCE(SAT) Features ● 8A 1.5V @ IC / IB = 5A / 1A Block Diagram Build-in Free-wheeling Diode Makes Efficient Antisaturation Operation

nte98

Contextual Info: NTE98 Silicon NPN Transistor HV Darlington Power Amp, Switch Description: The NTE98 is a silicon NPN Darlington transistor in a TO3 type package designed for high voltage, high–speed, power switching in inductive circuits where fall–time is critical. They are particularly

Contextual Info: AUIRLR3110Z AUIRLU3110Z Features l l l l l l l Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * D G S Description VDSS

Pnp transistor smd ba rn

Abstract: transistor marking code 12W SOT-23 smd transistor marking p69 TRANSISTOR SMD MARKING CODE s2a transistor smd bc rn TRANSISTOR SMD MARKING CODE bc ru 1ff TRANSISTOR SMD MARKING CODE smd transistor P2D Motorola transistor smd marking codes SMD TRANSISTOR MARKING P28
Contextual Info: ont«* fj= !IS iìC O Ii ú U C i o y G o ï p . TH t N t x ï G é n é r a t i o n o í s m d M D 9 D A T 9 9 and ap iablished jality system f A . the Resign and Manufactu ~ d iscrete ^SeTOiCbiSuct audit as been fu rnlis ishh^ALth th a t tj tJ j A » q u ire le n ts according tj

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 5303D Preliminary NPN SILICON TRANSISTOR HIGH VOLTAGE NPN TRANSISTOR WITH DIODE „ DESCRIPTION The UTC 5303D is a high voltage silicon triple diffused type NPN transistor with diode. This chip is built in free-wheeling diode , makeing efficient anti-saturation operation.

transistor M3004

Abstract: str TV SMPS STV9302A lm317x flyback MC34063 STV0499 mc34063 step down with mosfet LED DRIVER BY MC34063 mc34063 step up with mosfet STV9306
Contextual Info: Paving the Way to the New Era of Digital TV Innovative, Evolutive, Future-proof… With more than twenty years experience in developing TV solutions and leadership in set-top box and MPEG2 decoding, today STMicroelectronics offers comprehensive, cost-efficient

j5304d

Abstract: j5304 transistor j5304d FJE5304DTU NPN transistor Electronic ballast NPN J5304D to-126 npn switching transistor 400v free transistor and ic equivalent data o
Contextual Info: FJE5304D NPN Triple Diffused Planar Silicon Transistor FJE5304D NPN Triple Diffused Planar Silicon Transistor High Voltage High Speed Power Switch Application • Wide Safe Operating Area • Built-in Free Wheeling diode • Suitable for Electronic Ballast Application

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MJE13003D-P Preliminary NPN SILICON TRANSISTOR HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR  DESCRIPTION The UTC MJE13003D-P is a NPN Power Transistor. It is intended to be used in applications requiring medium voltage

MJE13003D

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MJE13003D Preliminary NPN SILICON TRANSISTOR HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR „ DESCRIPTION The UTC MJE13003D is a NPN Power Transistor. It is intended to be used in applications requiring medium voltage capability and high switching speeds.

AUFP1405

Abstract: IRS 640 AUIRFP1405
Contextual Info: PD - 97724 AUTOMOTIVE GRADE AUIRFP1405 Features l l l l l l l l l HEXFET Power MOSFET Advanced Planar Technology Low On-Resistance Dynamic dV/dT Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax

MJE13003D

Abstract: HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR *13003d
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MJE13003D Preliminary NPN SILICON TRANSISTOR HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR „ DESCRIPTION The UTC MJE13003D is a NPN Power Transistor. It is intended to be used in applications requiring medium voltage capability and high switching speeds.

Contextual Info: PD - 97724 AUTOMOTIVE GRADE AUIRFP1405 Features l l l l l l l l l HEXFET Power MOSFET Advanced Planar Technology Low On-Resistance Dynamic dV/dT Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax