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    SILICON DIODE 8 AMPER Search Results

    SILICON DIODE 8 AMPER Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    SILICON DIODE 8 AMPER Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    silicon carbide

    Abstract: No abstract text available
    Text: QJD1210007 Preliminary Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 724 925-7272 Silicon Carbide MOSFET Module 100 Amperes/1200 Volts A D K K K F E2 G2 U E2 C1 J G1 E1 C2E1 H Z AB EB UU H U AA Q Q P G N S - NUTS (3 TYP) T - (4 TYP) W V


    Original     		QJD1210007 Amperes/1200 silicon carbide PDF

    QJD1210006

    Abstract: DIAGRAM OF 5000 volts power inverter
    Text: QJD1210006 Preliminary Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 724 925-7272 Silicon Carbide MOSFET Module 100 Amperes/1200 Volts A D K K K F E2 G2 U E2 H C1 J G1 E1 C2E1 Z AB EB UU H U AA Q Q P G N S - NUTS (3 TYP) T - (4 TYP) W V


    Original     		QJD1210006 Amperes/1200 simplif25 DIAGRAM OF 5000 volts power inverter PDF

    MOSFET 1000 VOLTS

    Abstract: QJD1210006 MOSFET 20V 100A schottky diode 100A silicon carbide mosfet transistor 800 volts.300 amperes
    Text: QJD1210006 Preliminary Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 724 925-7272 Silicon Carbide MOSFET Module 100 Amperes/1200 Volts A Y D K K K Y F S2 G2 U S2 D1 Z AB H M AA Q EB UU J G1 S1 S1D2 H AC Q P U AD G N S - NUTS (3 TYP) T - (4 TYP)


    Original     		QJD1210006 Amperes/1200 MOSFET 1000 VOLTS MOSFET 20V 100A schottky diode 100A silicon carbide mosfet transistor 800 volts.300 amperes PDF

    c 103 mosfet

    Abstract: silicon carbide 1200-VOLT QJD1210006
    Text: QJD1210006 Preliminary Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 724 925-7272 www.pwrx.com Silicon Carbide MOSFET Module 100 Amperes/1200 Volts A Y D K K K Y F S2 G2 U S2 D1 Z AB H M AA Q EB UU J G1 S1 S1D2 H AC Q P U AD G N S - NUTS (3 TYP)


    Original     		QJD1210006 Amperes/1200 c 103 mosfet silicon carbide 1200-VOLT PDF

    Untitled

    Abstract: No abstract text available
    Text: QJD1210007 Preliminary Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 724 925-7272 Silicon Carbide MOSFET Module 100 Amperes/1200 Volts A Y D K K K Y F S2 G2 U S2 D1 Z AB H M AA Q EB UU J G1 S1 S1D2 H AC Q P U AD G N S - NUTS (3 TYP) T - (4 TYP)


    Original     		QJD1210007 Amperes/1200 PDF

    100A inverter mosfet

    Abstract: QJD1210006 MOSFET 1000 VOLTS 1200v mosfet "MOSFET Module" MOSFET 20V 100A mosfet transistor 800 volts.300 amperes silicon carbide
    Text: QJD1210006 Preliminary Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 724 925-7272 www.pwrx.com Silicon Carbide MOSFET Module 100 Amperes/1200 Volts A Y D K K K Y F S2 G2 U S2 D1 Z AB H M AA Q EB UU J G1 S1 S1D2 H AC Q P U AD G N S - NUTS (3 TYP)


    Original     		QJD1210006 Amperes/1200 100A inverter mosfet MOSFET 1000 VOLTS 1200v mosfet "MOSFET Module" MOSFET 20V 100A mosfet transistor 800 volts.300 amperes silicon carbide PDF

    schottky diode 100A

    Abstract: MOSFET 20V 100A QJD1210007 "MOSFET Module" silicon diode 1200V capacitance mosfet transistor 800 volts.300 amperes silicon carbide IR diode 100A 800V "silicon carbide" device transistor silicon carbide
    Text: QJD1210007 Preliminary Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 724 925-7272 www.pwrx.com Silicon Carbide MOSFET Module 100 Amperes/1200 Volts A Y D K K K Y F S2 G2 U S2 D1 Z AB H M AA Q EB UU J G1 S1 S1D2 H AC Q P U AD G N S - NUTS (3 TYP)


    Original     		QJD1210007 Amperes/1200 schottky diode 100A MOSFET 20V 100A "MOSFET Module" silicon diode 1200V capacitance mosfet transistor 800 volts.300 amperes silicon carbide IR diode 100A 800V "silicon carbide" device transistor silicon carbide PDF

    Untitled

    Abstract: No abstract text available
    Text: QJD1210006 Preliminary Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 724 925-7272 www.pwrx.com Silicon Carbide MOSFET Module 100 Amperes/1200 Volts A Y D K K K Y F S2 G2 U S2 D1 Z AB H M AA Q EB UU J G1 S1 S1D2 H AC Q P U AD G N S - NUTS (3 TYP)


    Original     		QJD1210006 Amperes/1200 QJD1210006 PDF

    Untitled

    Abstract: No abstract text available
    Text: QJD1210007 Preliminary Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 724 925-7272 www.pwrx.com Silicon Carbide MOSFET Module 100 Amperes/1200 Volts A Y D K K K Y F S2 G2 U S2 D1 Z AB H M AA Q EB UU J G1 S1 S1D2 H AC Q P U AD G N S - NUTS (3 TYP)


    Original     		QJD1210007 Amperes/1200 QJD1210007 PDF

    silicon carbide

    Abstract: 1200v mosfet 100A inverter mosfet
    Text: QJD1210007 Preliminary Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 724 925-7272 www.pwrx.com Silicon Carbide MOSFET Module 100 Amperes/1200 Volts A Y D K K K Y F S2 G2 U S2 D1 Z AB H M AA Q EB UU J G1 S1 S1D2 H AC Q P U AD G N S - NUTS (3 TYP)


    Original     		QJD1210007 Amperes/1200 silicon carbide 1200v mosfet 100A inverter mosfet PDF

    welder mosfet

    Abstract: mosfet base induction heat circuit QJD1210010 MOSFET 1000 VOLTS high frequency welder circuit diagram sic mosfet
    Text: QJD1210010 Preliminary Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 724 925-7272 www.pwrx.com Split Dual SiC MOSFET Module 100 Amperes/1200 Volts Y A AA D AC AB F Z DETAIL "B" Q Q Q P 1 2 3 U 4 5 6 7 8 9 10 11 12 X B M N E G DETAIL "B"


    Original     		QJD1210010 Amperes/1200 welder mosfet mosfet base induction heat circuit MOSFET 1000 VOLTS high frequency welder circuit diagram sic mosfet PDF

    QJD1210011

    Abstract: No abstract text available
    Text: QJD1210011 Preliminary Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 724 925-7272 www.pwrx.com Split Dual SiC MOSFET Module 100 Amperes/1200 Volts Y A AA D AC AB F Z DETAIL "B" Q Q Q P 1 2 3 U 4 5 6 7 8 9 10 11 12 X B M N E G DETAIL "B"


    Original     		QJD1210011 Amperes/1200 PDF

    Untitled

    Abstract: No abstract text available
    Text: QJD1210010 Preliminary Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 724 925-7272 www.pwrx.com Split Dual SiC MOSFET Module 100 Amperes/1200 Volts Y A AA D AC AB F Z DETAIL "B" Q Q Q P 1 2 3 U 4 5 6 7 8 9 10 11 12 X B M N E G DETAIL "B"


    Original     		QJD1210010 Amperes/1200 QJD1210010 PDF

    Untitled

    Abstract: No abstract text available
    Text: QJD1210010 Preliminary Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 724 925-7272 www.pwrx.com Split Dual SiC MOSFET Module 100 Amperes/1200 Volts Y A AA D AC AB F Z DETAIL "B" Q Q Q P 1 2 3 U 4 5 6 7 8 9 10 11 12 X B M N E G DETAIL "B"


    Original     		QJD1210010 Amperes/1200 PDF

    Untitled

    Abstract: No abstract text available
    Text: QJD1210011 Preliminary Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 724 925-7272 www.pwrx.com Split Dual SiC MOSFET Module 100 Amperes/1200 Volts Y A AA D AC AB F Z DETAIL "B" Q Q Q P 1 2 3 U 4 5 6 7 8 9 Description: Powerex Silicon Carbide MOSFET


    Original     		QJD1210011 Amperes/1200 QJD1210011 PDF

    CNX35

    Abstract: CNX36
    Text: G E SOLID STATE 01 Optoelectronic Specifications. DE|3ñ75Dfli □□nasa a |~~ '- 4 I- 8 3 Photon Coupled Isolator CNX35, CNX36 Ga As Infrared Emitting Diode & NPN Silicon Photo-Transistor The GE Solid State CNX35 and CNX 36 are gallium arsenide, infrared emitting diodes coupled with a silicon phototransistor


    OCR Scan     		3fl750fll -qi-83 CNX35, CNX36 CNX35 750fil CNX36 PDF

    Untitled

    Abstract: No abstract text available
    Text: • m m Chatsworth, CA m Micmsemi P rog ress Po^vered b y T echnology 9261 O w ensm ou th A ve. C hatsw orth, C a 91311 Phone: 8 1 8 7 0 1 -4 9 3 3 Fax: ( 8 1 8 )7 0 1 - 4 9 3 9 Features Low C urrent L e a k a g e 500mW 100 Volt Silicon Epitaxial Diode


    OCR Scan     		500mW DO-35 1N4148 PDF

    tt 3043

    Abstract: cp clare relay hg 1002 sol 4011 be 1N3888 clare mercury-wetted relay 1n3884 1N3890 clare mercury relay z037 1N3885
    Text: MIL SPECS I C J Q C m a i H S OODBTOS 1 | MIL-S-19500/304B AMENDMENT 3 11 Auqust 1987 WOTSTDTfre-AMENDMENT 2 8 July 1985 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, FAST-RECOVERY TYPES 1N3885, 1N3886, 1N3888, 1N3890, 1N3891, 1N3893,


    OCR Scan     		MIL-S-19500/304B 1N3885, 1N3886, 1N3888, 1N3890, 1N3891, 1N3893, 1N3890R, 1N3891R, 1N3893R tt 3043 cp clare relay hg 1002 sol 4011 be 1N3888 clare mercury-wetted relay 1n3884 1N3890 clare mercury relay z037 1N3885 PDF

    136S6

    Abstract: CNY51 DIODE RK 306 TA-100
    Text: G E SOLID STATE □1 Optoelectronic Specifications 3fi750fll oonaso b I DEf T -4 1 -8 3 Photon Coupled Isolator CNY51 19- Ga As Infrared Em itting Diode & NPN Silicon Photo-T ransistor -— The G E Solid State CNY51 consists of a gallium arsenide, infrared


    OCR Scan     		3fi750fll CNY51 CNY51 3fl75Dfll 136S6 DIODE RK 306 TA-100 PDF

    Untitled

    Abstract: No abstract text available
    Text: 01E 3875081 G E SOLID STATE uptoeiectronic specifications _ HARRI S SEMI COND 3 7E SECTOR 43Q2571 » 0027134 Photon Coupled Isolator 4 N 2 5 -4 N 2 5 A -4 N 2 6 -4 N 2 7 -4 N 2 8 SYMBOL Ga As Infrared Emitting Diode & NPN Silicon Photo-Transistor


    OCR Scan     		43Q2571 92CS-42662 92CS-429S1 PDF

    MCT210

    Abstract: No abstract text available
    Text: fs E SOLID STATE 01 DE | 3ñ7S0 ñl_0 Dnfi7t 2 Optoelectronic Specifications. T -m -Z3 Photon Coupled Isolator MCT210 GaAs Infrared Emitting Diode & NPN Silicon Photo-Transistor M IN A 8 C P E F G H J K M N P R S TOCovered under U .L . component recognition program,


    OCR Scan     		T-Hl-23 MCT210 MCT210 E51868 50/jA. 0110b PDF

    Untitled

    Abstract: No abstract text available
    Text: 3875081 G E SOLID STATE 01E 19848 D Optoelectronic Specifications_ T - u /j. HARRIS SEMIC0N» SECTOR 37E D 430SS71 G02731Q 1 Photon Coupled Isolator C N Y 4 8 M IL L I M E T E R S SW 80L- Ga As Infrared Emitting Diode & NPN Silicon Photo-Darlington Amplifier


    OCR Scan     		430SS71 G02731Q CNY48 S-42662 92CS-429S1 PDF

    Untitled

    Abstract: No abstract text available
    Text: 1N3889 thru 1N3893 Microsemi Corp. 7 The diode experts SANTA ANA, CA SCOTTSDALE, AZ F o r m ore inform ation call: 6 0 2 9 4 1-6 3 0 0 FEATURES 12 AMP SILICON FAST RECOVERY RECTIFIER • 1N 3 B 9 0 .1N 3 8 9 1. AND 1N3893 HAVE J A N . J A N T X A N D J A N T X V STAN D AR D


    OCR Scan     		1N3889 1N3893 1N3893 IL-S-19500/304 PDF

    Untitled

    Abstract: No abstract text available
    Text: 5 7E ÖUALITY TECHNOLOGIES CORP 7 4 b b flS l 00042ÔÔ 7 0 0 m ciT Y European “Pro Electron” Registered T y p e s _ CQY80 Optoisolator G a A s Infrared Emitting Diode and N PN Silicon Phototransistor 2 i I o— l- « i T h e C Q Y 8 0 is a galliu m a rse n id e , in fr a r e d em ittin g d io d e


    OCR Scan     		CQY80 PDF