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    SILICON DIODE 1200V CAPACITANCE Search Results

    SILICON DIODE 1200V CAPACITANCE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    GC321AD7LP103KX18J Murata Manufacturing Co Ltd High Effective Capacitance & High Ripple Current Chip Multilayer Ceramic Capacitors for Automotive Visit Murata Manufacturing Co Ltd
    GC331AD7LQ153KX18J Murata Manufacturing Co Ltd High Effective Capacitance & High Ripple Current Chip Multilayer Ceramic Capacitors for Automotive Visit Murata Manufacturing Co Ltd
    GC331CD7LQ473KX19K Murata Manufacturing Co Ltd High Effective Capacitance & High Ripple Current Chip Multilayer Ceramic Capacitors for Automotive Visit Murata Manufacturing Co Ltd
    GC343DD7LP334KX18K Murata Manufacturing Co Ltd High Effective Capacitance & High Ripple Current Chip Multilayer Ceramic Capacitors for Automotive Visit Murata Manufacturing Co Ltd
    GC355DD7LQ224KX18K Murata Manufacturing Co Ltd High Effective Capacitance & High Ripple Current Chip Multilayer Ceramic Capacitors for Automotive Visit Murata Manufacturing Co Ltd

    SILICON DIODE 1200V CAPACITANCE Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    D10S120

    Abstract: power diode history
    Text: SiC Silicon Carbide Diode thin Q! T M S iC Sc ho ttk y Dio de 1200V SiC Schottky Diode IDW 10S120 Final Da ta sheet Rev. 2.0,<2012-03-23> Po wer Ma n age m ent & M ulti m ark et thinQ! SiC Schottky Diode 1 IDW10S120 Description The 1200V family of Infineon SiC Schottky diodes has emerged over the


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    10S120 IDW10S120 IDWxxS120 D10S120 power diode history PDF

    IDW30S120

    Abstract: 30S120 D30S120
    Text: SiC Silicon Carbide Diode thin Q! T M S iC Sc ho ttk y Dio de 1200V SiC Schottky Diode IDW 30S120 Final Da ta sheet Rev. 2.0,<2012-03-23> Po wer Ma nage m ent & M ulti m ark et thinQ! SiC Schottky Diode 1 IDW30S120 Description The 1200V family of Infineon SiC Schottky diodes has emerged over the


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    30S120 IDW30S120 IDWxxS120 IDW30S120 30S120 D30S120 PDF

    d15s120

    Abstract: 15S120 schottky 400v
    Text: SiC Silicon Carbide Diode thin Q! T M S iC Sc ho ttk y Dio de 1200V SiC Schottky Diode IDW 15S120 Final Da ta sheet Rev. 2.0,<2012-03-23> Po wer Ma nage m ent & M ulti m ark et thinQ! SiC Schottky Diode 1 IDW15S120 Description The 1200V family of Infineon SiC Schottky diodes has emerged over the


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    15S120 IDW15S120 IDWxxS120 d15s120 15S120 schottky 400v PDF

    Untitled

    Abstract: No abstract text available
    Text: SiC Silicon Carbide Diode thin Q! T M S iC Sc ho ttk y Dio de 1200V SiC Schottky Diode IDW 30S120 Final Da ta s heet Rev. 2.0,<2012-03-23> Po wer Ma nage m ent & M ulti m ark et thinQ! SiC Schottky Diode 1 IDW30S120 Description The 1200V family of Infineon SiC Schottky diodes has emerged over the


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    30S120 IDW30S120 IDWxxS120 PDF

    Untitled

    Abstract: No abstract text available
    Text: SiC Silicon Carbide Diode thin Q! T M S iC Sc ho ttk y Dio de 1200V SiC Schottky Diode IDW 15S120 Final Da ta s heet Rev. 2.0,<2012-03-23> Po wer Ma nage m ent & M ulti m ark et thinQ! SiC Schottky Diode 1 IDW15S120 Description The 1200V family of Infineon SiC Schottky diodes has emerged over the


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    15S120 IDW15S120 IDWxxS120 PDF

    IDW20S120

    Abstract: TP200
    Text: SiC Silicon Carbide Diode thin Q! T M S iC Sc ho ttk y Dio de 1200V SiC Schottky Diode IDW20S120 Final Da ta sheet Rev. 2.0,<2012-03-23> Po wer Ma nage m ent & M ulti m ark et thinQ! SiC Schottky Diode 1 IDW20S120 Description The 1200V family of Infineon SiC Schottky diodes has emerged over the


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    IDW20S120 IDWxxS120 IDW20S120 TP200 PDF

    Untitled

    Abstract: No abstract text available
    Text: SiC Silicon Carbide Diode thin Q! T M S iC Sc ho ttk y Dio de 1200V SiC Schottky Diode IDW20S120 Final Da ta s heet Rev. 2.0,<2012-03-23> Po wer Ma nage m ent & M ulti m ark et thinQ! SiC Schottky Diode 1 IDW20S120 Description The 1200V family of Infineon SiC Schottky diodes has emerged over the


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    IDW20S120 IDWxxS120 PDF

    Untitled

    Abstract: No abstract text available
    Text: 1 2 TO -24 7 1 - Cathode 2 - Anode Back of Case - Cathode D3PAK APT10SC120B 1200V 10A APT10SC120S 1200V 10A 1 2 2 1 SILICON CARBIDE SCHOTTKY RECTIFIER DIODE PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • PFC And Forward Topologies • Schottky Barrier


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    APT10SC120B APT10SC120S O-247 PDF

    APT2X10SC120J

    Abstract: No abstract text available
    Text: 2 3 2 2 3 3 1 1 4 1 4 4 Anti-Parallel Parallel APT2X10SC120J APT2X11SC120J 27 2 T- SO APT2X11SC120J APT2X10SC120J 1200V 1200V 10A 10A SILICON CARBIDE SCHOTTKY RECTIFIER DIODE PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • PFC And Forward Topologies


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    APT2X10SC120J APT2X11SC120J APT2X11SC120J OT-227 APT2X10SC120J PDF

    Untitled

    Abstract: No abstract text available
    Text: APT30SCD120B APT30SCD120S 1200V 30A Zero Recovery Silicon Carbide Schottky Diode PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • Anti-Parallel Diode -Switchmode Power Supply -Inverters • Zero Recovery Times trr • Higher Reliability Systems


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    APT30SCD120B APT30SCD120S O-247 PDF

    APT20S

    Abstract: 200v 100A schottky APT20SCD120B
    Text: APT20SCD120B APT20SCD120S 1200V 20A Zero Recovery Silicon Carbide Schottky Diode PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • Anti-Parallel Diode -Switchmode Power Supply -Inverters • Zero Recovery Times trr • Higher Reliability Systems


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    APT20SCD120B APT20SCD120S O-247 APT20S 200v 100A schottky PDF

    Untitled

    Abstract: No abstract text available
    Text: SiC Silicon Carbide Diode thin Q! T M S iC Sc ho ttk y Dio de 1200V SiC Schottky Diode IDW 10S120 Final Da ta s heet Rev. 2.0,<2012-03-23> Po wer Ma n age m ent & M ulti m ark et thinQ! SiC Schottky Diode 1 IDW10S120 Description The 1200V family of Infineon SiC Schottky diodes has emerged over the


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    10S120 IDW10S120 IDWxxS120 PDF

    Untitled

    Abstract: No abstract text available
    Text: APT10SCD120BCT 1200V 10A Zero Recovery Silicon Carbide Schottky Diode BCT T O PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • Anti-Parallel Diode -Switchmode Power Supply -Inverters • Zero Recovery Times (trr) • Higher Reliability Systems


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    APT10SCD120BCT O-247 PDF

    Untitled

    Abstract: No abstract text available
    Text: APT10SCE120B 1200V 10A Zero Recovery Silicon Carbide Schottky Diode PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • Anti-Parallel Diode -Switchmode Power Supply -Inverters • Zero Recovery Times trr • Higher Reliability Systems • Popular TO-247 Package


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    APT10SCE120B O-247 PDF

    APT10SCD120B

    Abstract: No abstract text available
    Text: APT10SCD120B 1200V 10A Zero Recovery Silicon Carbide Schottky Diode TO PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • Anti-Parallel Diode -Switchmode Power Supply -Inverters • Zero Recovery Times trr • Higher Reliability Systems • Popular TO-247 Package


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    APT10SCD120B O-247 PDF

    Untitled

    Abstract: No abstract text available
    Text: APT20SCD120BHB 1200V 20A Zero Recovery Silicon Carbide Schottky Diode TO PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • Anti-Parallel Diode -Switchmode Power Supply -Inverters • Zero Recovery Time trr • Higher Reliability Systems • Popular TO-247 Package


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    APT20SCD120BHB O-247 PDF

    RURG15120CC

    Abstract: URG15120C
    Text: RURG15120CC Data Sheet January 2000 File Number 3695.2 15A, 1200V Ultrafast Dual Diode Features The RURG15120CC is an ultrafast dual diode with soft recovery characteristics trr < 100ns . It has low forward voltage drop and is of silicon nitride passivated


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    RURG15120CC RURG15120CC 100ns) 100ns URG15120C PDF

    RURU50120

    Abstract: TA49099
    Text: RURU50120 Data Sheet January 2002 50A, 1200V Ultrafast Diode Features The RURU50120 is an ultrafast diode with soft recovery characteristics trr < 125ns . It has low forward voltage drop and is of silicon nitride passivated ion-implanted epitaxial planar construction.


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    RURU50120 RURU50120 125ns) 125ns 175oC TA49099 PDF

    RURU150120

    Abstract: No abstract text available
    Text: RURU150120 Data Sheet January 2002 150A, 1200V Ultrafast Diode Features The RURU150120 is an ultrafast diode with soft recovery characteristics trr < 200ns . It has low forward voltage drop and is of silicon nitride passivated ion-implanted epitaxial planar construction.


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    RURU150120 RURU150120 200ns) 200ns 175oC PDF

    RURP8120

    Abstract: No abstract text available
    Text: RURP8120 Data Sheet January 2002 8A, 1200V Ultrafast Diode Features The RURP8120 is an ultrafast diode with soft recovery characteristics trr < 100ns . It has low forward voltage drop and is of silicon nitride passivated ion-implanted epitaxial planar construction.


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    RURP8120 RURP8120 100ns) 100ns 175oC PDF

    RUR15120

    Abstract: RURP15120
    Text: RURP15120 Data Sheet January 2002 15A, 1200V Ultrafast Diode Features The RURP15120 is an ultrafast diode with soft recovery characteristics trr < 100ns . It has low forward voltage drop and is of silicon nitride passivated ion-implanted epitaxial planar construction.


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    RURP15120 RURP15120 100ns) 100ns 175oC RUR15120 PDF

    RURG50120

    Abstract: TA49099
    Text: RURG50120 Data Sheet January 2002 50A, 1200V Ultrafast Diode Features The RURG50120 is an ultrafast diode with soft recovery characteristics trr < 125ns . It has low forward voltage drop and is of silicon nitride passivated ion-implanted epitaxial planar construction.


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    RURG50120 RURG50120 125ns) 125ns 175oC TA49099 PDF

    RHR6120C

    Abstract: RHRP6120CC TA49058
    Text: RHRP6120CC January 2002 6A, 1200V Hyperfast Dual Diode Features The RHRP6120CC is a hyperfast dual diode with soft recovery characteristics tRR < 55ns . It has half the recovery time of ultrafast diodes and is silicon nitride passivated ion-implanted epitaxial planar construction.


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    RHRP6120CC RHRP6120CC 175oC RHR6120C TA49058 PDF

    TA49036

    Abstract: RURP4120CC
    Text: RURP4120CC Data Sheet January 2000 File Number 4050.1 4A, 1200V Ultrafast Dual Diode Features The RURP4120CC is an ultrafast dual diode with soft recovery characteristics trr < 70ns . It has low forward voltage drop and is silicon nitride passivated ion-implanted


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    RURP4120CC RURP4120CC TA49036 PDF