SILICON DIODE 1200V CAPACITANCE Search Results

D10S120

Abstract: power diode history
Contextual Info: SiC Silicon Carbide Diode thin Q! T M S iC Sc ho ttk y Dio de 1200V SiC Schottky Diode IDW 10S120 Final Da ta sheet Rev. 2.0,<2012-03-23> Po wer Ma n age m ent & M ulti m ark et thinQ! SiC Schottky Diode 1 IDW10S120 Description The 1200V family of Infineon SiC Schottky diodes has emerged over the

IDW30S120

Abstract: 30S120 D30S120
Contextual Info: SiC Silicon Carbide Diode thin Q! T M S iC Sc ho ttk y Dio de 1200V SiC Schottky Diode IDW 30S120 Final Da ta sheet Rev. 2.0,<2012-03-23> Po wer Ma nage m ent & M ulti m ark et thinQ! SiC Schottky Diode 1 IDW30S120 Description The 1200V family of Infineon SiC Schottky diodes has emerged over the

d15s120

Abstract: 15S120 schottky 400v
Contextual Info: SiC Silicon Carbide Diode thin Q! T M S iC Sc ho ttk y Dio de 1200V SiC Schottky Diode IDW 15S120 Final Da ta sheet Rev. 2.0,<2012-03-23> Po wer Ma nage m ent & M ulti m ark et thinQ! SiC Schottky Diode 1 IDW15S120 Description The 1200V family of Infineon SiC Schottky diodes has emerged over the

Contextual Info: SiC Silicon Carbide Diode thin Q! T M S iC Sc ho ttk y Dio de 1200V SiC Schottky Diode IDW 30S120 Final Da ta s heet Rev. 2.0,<2012-03-23> Po wer Ma nage m ent & M ulti m ark et thinQ! SiC Schottky Diode 1 IDW30S120 Description The 1200V family of Infineon SiC Schottky diodes has emerged over the

Contextual Info: SiC Silicon Carbide Diode thin Q! T M S iC Sc ho ttk y Dio de 1200V SiC Schottky Diode IDW 15S120 Final Da ta s heet Rev. 2.0,<2012-03-23> Po wer Ma nage m ent & M ulti m ark et thinQ! SiC Schottky Diode 1 IDW15S120 Description The 1200V family of Infineon SiC Schottky diodes has emerged over the

IDW20S120

Abstract: TP200
Contextual Info: SiC Silicon Carbide Diode thin Q! T M S iC Sc ho ttk y Dio de 1200V SiC Schottky Diode IDW20S120 Final Da ta sheet Rev. 2.0,<2012-03-23> Po wer Ma nage m ent & M ulti m ark et thinQ! SiC Schottky Diode 1 IDW20S120 Description The 1200V family of Infineon SiC Schottky diodes has emerged over the

Contextual Info: SiC Silicon Carbide Diode thin Q! T M S iC Sc ho ttk y Dio de 1200V SiC Schottky Diode IDW20S120 Final Da ta s heet Rev. 2.0,<2012-03-23> Po wer Ma nage m ent & M ulti m ark et thinQ! SiC Schottky Diode 1 IDW20S120 Description The 1200V family of Infineon SiC Schottky diodes has emerged over the

Contextual Info: 1 2 TO -24 7 1 - Cathode 2 - Anode Back of Case - Cathode D3PAK APT10SC120B 1200V 10A APT10SC120S 1200V 10A 1 2 2 1 SILICON CARBIDE SCHOTTKY RECTIFIER DIODE PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • PFC And Forward Topologies • Schottky Barrier

APT2X10SC120J

Contextual Info: 2 3 2 2 3 3 1 1 4 1 4 4 Anti-Parallel Parallel APT2X10SC120J APT2X11SC120J 27 2 T- SO APT2X11SC120J APT2X10SC120J 1200V 1200V 10A 10A SILICON CARBIDE SCHOTTKY RECTIFIER DIODE PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • PFC And Forward Topologies

Contextual Info: APT30SCD120B APT30SCD120S 1200V 30A Zero Recovery Silicon Carbide Schottky Diode PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • Anti-Parallel Diode -Switchmode Power Supply -Inverters • Zero Recovery Times trr • Higher Reliability Systems

APT20S

Abstract: 200v 100A schottky APT20SCD120B
Contextual Info: APT20SCD120B APT20SCD120S 1200V 20A Zero Recovery Silicon Carbide Schottky Diode PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • Anti-Parallel Diode -Switchmode Power Supply -Inverters • Zero Recovery Times trr • Higher Reliability Systems

Contextual Info: SiC Silicon Carbide Diode thin Q! T M S iC Sc ho ttk y Dio de 1200V SiC Schottky Diode IDW 10S120 Final Da ta s heet Rev. 2.0,<2012-03-23> Po wer Ma n age m ent & M ulti m ark et thinQ! SiC Schottky Diode 1 IDW10S120 Description The 1200V family of Infineon SiC Schottky diodes has emerged over the

Contextual Info: APT10SCD120BCT 1200V 10A Zero Recovery Silicon Carbide Schottky Diode BCT T O PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • Anti-Parallel Diode -Switchmode Power Supply -Inverters • Zero Recovery Times (trr) • Higher Reliability Systems

Contextual Info: APT10SCE120B 1200V 10A Zero Recovery Silicon Carbide Schottky Diode PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • Anti-Parallel Diode -Switchmode Power Supply -Inverters • Zero Recovery Times trr • Higher Reliability Systems • Popular TO-247 Package

APT10SCD120B

Contextual Info: APT10SCD120B 1200V 10A Zero Recovery Silicon Carbide Schottky Diode TO PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • Anti-Parallel Diode -Switchmode Power Supply -Inverters • Zero Recovery Times trr • Higher Reliability Systems • Popular TO-247 Package

Contextual Info: APT20SCD120BHB 1200V 20A Zero Recovery Silicon Carbide Schottky Diode TO PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • Anti-Parallel Diode -Switchmode Power Supply -Inverters • Zero Recovery Time trr • Higher Reliability Systems • Popular TO-247 Package

RURG15120CC

Abstract: URG15120C
Contextual Info: RURG15120CC Data Sheet January 2000 File Number 3695.2 15A, 1200V Ultrafast Dual Diode Features The RURG15120CC is an ultrafast dual diode with soft recovery characteristics trr < 100ns . It has low forward voltage drop and is of silicon nitride passivated

RURU50120

Abstract: TA49099
Contextual Info: RURU50120 Data Sheet January 2002 50A, 1200V Ultrafast Diode Features The RURU50120 is an ultrafast diode with soft recovery characteristics trr < 125ns . It has low forward voltage drop and is of silicon nitride passivated ion-implanted epitaxial planar construction.

RURU150120

Contextual Info: RURU150120 Data Sheet January 2002 150A, 1200V Ultrafast Diode Features The RURU150120 is an ultrafast diode with soft recovery characteristics trr < 200ns . It has low forward voltage drop and is of silicon nitride passivated ion-implanted epitaxial planar construction.

RURP8120

Contextual Info: RURP8120 Data Sheet January 2002 8A, 1200V Ultrafast Diode Features The RURP8120 is an ultrafast diode with soft recovery characteristics trr < 100ns . It has low forward voltage drop and is of silicon nitride passivated ion-implanted epitaxial planar construction.

RUR15120

Abstract: RURP15120
Contextual Info: RURP15120 Data Sheet January 2002 15A, 1200V Ultrafast Diode Features The RURP15120 is an ultrafast diode with soft recovery characteristics trr < 100ns . It has low forward voltage drop and is of silicon nitride passivated ion-implanted epitaxial planar construction.

RURG50120

Abstract: TA49099
Contextual Info: RURG50120 Data Sheet January 2002 50A, 1200V Ultrafast Diode Features The RURG50120 is an ultrafast diode with soft recovery characteristics trr < 125ns . It has low forward voltage drop and is of silicon nitride passivated ion-implanted epitaxial planar construction.

RHR6120C

Abstract: RHRP6120CC TA49058
Contextual Info: RHRP6120CC January 2002 6A, 1200V Hyperfast Dual Diode Features The RHRP6120CC is a hyperfast dual diode with soft recovery characteristics tRR < 55ns . It has half the recovery time of ultrafast diodes and is silicon nitride passivated ion-implanted epitaxial planar construction.

TA49036

Abstract: RURP4120CC
Contextual Info: RURP4120CC Data Sheet January 2000 File Number 4050.1 4A, 1200V Ultrafast Dual Diode Features The RURP4120CC is an ultrafast dual diode with soft recovery characteristics trr < 70ns . It has low forward voltage drop and is silicon nitride passivated ion-implanted