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    SILICON CARBIDE AT EXTREME TEMPERATURE Search Results

    SILICON CARBIDE AT EXTREME TEMPERATURE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TCTH022BE Toshiba Electronic Devices & Storage Corporation Over Temperature Detection IC / VDD=1.7~5.5V / IPTCO=10μA / IDD=11.3μA / Open-drain type / FLAG signal latch function Visit Toshiba Electronic Devices & Storage Corporation
    TCTH021BE Toshiba Electronic Devices & Storage Corporation Over Temperature Detection IC / VDD=1.7~5.5V / IPTCO=10μA / IDD=11.3μA / Open-drain type Visit Toshiba Electronic Devices & Storage Corporation
    TCTH011AE Toshiba Electronic Devices & Storage Corporation Over Temperature Detection IC / VDD=1.7~5.5V / IPTCO=1μA / IDD=1.8μA / Push-pull type Visit Toshiba Electronic Devices & Storage Corporation
    TCTH022AE Toshiba Electronic Devices & Storage Corporation Over Temperature Detection IC / VDD=1.7~5.5V / IPTCO=10μA / IDD=11.3μA / Push-pull type / FLAG signal latch function Visit Toshiba Electronic Devices & Storage Corporation
    TCTH021AE Toshiba Electronic Devices & Storage Corporation Over Temperature Detection IC / VDD=1.7~5.5V / IPTCO=10μA / IDD=11.3μA / Push-pull type Visit Toshiba Electronic Devices & Storage Corporation

    SILICON CARBIDE AT EXTREME TEMPERATURE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MSK4105

    Abstract: No abstract text available
    Text: MIL-PRF-38534 & 38535 CERTIFIED FACILITY HIGH TEMPERATURE 600V/10A HERMETIC HALF BRIDGE 4105 FEATURES: Operational From -55°C to 190°C Half Bridge Configuration Silicon Carbide Power MOSFETS Silicon Carbide Recovery Diodes 600V Rated Voltage 20A Continuous Output Current at Tc=25°C


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    PDF MIL-PRF-38534 00V/10A MIL-PRF-38534 MSK4105 MIL-PRF-38534,

    SG01S

    Abstract: uv flame sensor SUN SENSOR ultraviolet sensor flame FLAME SENSOR UV ultraviolet sensor uvc photodiode TO-39, UVC SG01S-ISO "smax"
    Text: UV-index sensor based on SiC EryF* Features • Special UV-index sensor, precision up to +/- 0.5 UVI • Optimally suited for accurate sun-UV dosimetry • Also suited for sun tanning bank dosimetry • Silicon Carbide based chip for radiation hardness • Intrinsic visible blindness due to wide-bandgap semiconductor material


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    PDF SG01S-ISO SG01S uv flame sensor SUN SENSOR ultraviolet sensor flame FLAME SENSOR UV ultraviolet sensor uvc photodiode TO-39, UVC SG01S-ISO "smax"

    aircraft altimeter

    Abstract: c-mac 1553 CMAC 1553 CMAC blood gas C-MAC MicroTechnology extreme low temperature chip carrier HTCC data sheet Tier NR30
    Text: HIGH TEMPERATURE ELECTRONIC SOLUTIONS C-MAC is a world leader in the design and manufacture of high reliability electronic modules for harsh environments ‘C-MAC’s multi-chip modules can extend the life of electronic systems in harsh environments’ Extensive experience in our core markets


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    PDF MIL-STD-1553 aircraft altimeter c-mac 1553 CMAC 1553 CMAC blood gas C-MAC MicroTechnology extreme low temperature chip carrier HTCC data sheet Tier NR30

    SIC01S-HT

    Abstract: silicon carbide UV photodiode
    Text: Ultraviolet selective SiC based UV sensor SIC01S-HT Features • Operating Temperature up to 170°C • Broad Band UVA-UVB-UVC Photodiode • Optimally suited for UVC high radiation control • Silicon Carbide based chip for extreme irradiation hardness •


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    PDF SIC01S-HT SIC01S-HT silicon carbide UV photodiode

    SG01S-HT

    Abstract: uv sensor silicon carbide SG01S
    Text: Ultraviolet selective SiC based UV sensor SG01S-HT Features • Operating Temperature up to 170°C • Broad Band UVA-UVB-UVC Photodiode • Optimally suited for UVC high radiation control • Silicon Carbide based chip for extreme irradiation hardness •


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    PDF SG01S-HT SG01S-HT uv sensor silicon carbide SG01S

    infineon radar

    Abstract: silicon carbide CH-8047 P-2720-093
    Text: ONE STEP BEYOND t h i n Q ! T M S i l i co n Ca r b i d e P o w e r D i o d e s www.infineon.com Never stop thinking. THE CUTTING EDGE I m a g i n e a s e m i c o n d u c t o r m a t e r i a l that can withstand the heat of a jet engine and the cold of outer space. In fact, why imagine – when it’s


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    PDF B112-H7799-X-X-7600 DK-2750 infineon radar silicon carbide CH-8047 P-2720-093

    ceramo paste

    Abstract: uv sensor ultraviolet sensor CO Sensor
    Text: Ultraviolet selective SiC based UV sensor UV_Water_1 Features • ¼ Stainless Steel Sensor Probe • compliance with IP65 • 15 bar water proof • Broad Band UVA-UVB-UVC Photodiode • Optimally suited for UVC high radiation control • Silicon Carbide based chip for extreme irradiation hardness


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    IC 7448

    Abstract: data sheet IC 7448 semiconductor 7448 FM362 U3158 CH-8022 Research Center Module ic 70184 PLC based PROJECTS transistor HJ 388
    Text: Semelab High Reliability Modules Worldwide Sales Representatives by Dr Steve Jones Semelab is able to offer a custom range of power modules incorporating various circuit topologies capable of operating in extreme environments whilst still offering excellent thermal


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    uv photodiode SIC01L-18

    Abstract: SIC01L-18 cree ultraviolet uv sensor
    Text: Ultraviolet selective SiC based UV sensor SIC01L-18 Features • Broad band UVA-UVB-UVC photodiode in TO18 metal package • Silicon Carbide based chip for extreme radiation hardness • Chip dimensions of 1 x 1 mm2 with 0.96 mm2 active area • Intrinsic visible blindness due to wide-bandgap semiconductor material


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    PDF SIC01L-18 S280nm S400nm uv photodiode SIC01L-18 SIC01L-18 cree ultraviolet uv sensor

    uv sensor

    Abstract: SIC01L-5 SUN SENSOR silicon carbide
    Text: Ultraviolet selective SiC based UV sensor SIC01L-5 Features • Broad band UVA-UVB-UVC photodiode in TO5 metal package • Silicon Carbide based chip for extreme radiation hardness • Chip dimensions of 1 x 1 mm2 with 0.96 mm2 active area • Intrinsic visible blindness due to wide-bandgap semiconductor material


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    PDF SIC01L-5 S280nm S400nm uv sensor SIC01L-5 SUN SENSOR silicon carbide

    TO-39, UVC

    Abstract: SIC01L-5-C uvc photodiode uv sensor silicon carbide
    Text: UVC-selective SiC based UV sensor SIC01L-5-C Features • UVC Photodiode with large photoactive area • Optimally suited for weak UVC intensities • Silicon Carbide based chip for extreme irradiation hardness • Spectral response in accordance with DVGW W 294


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    PDF SIC01L-5-C TO-39, UVC SIC01L-5-C uvc photodiode uv sensor silicon carbide

    uvc photodiode

    Abstract: uv sensor SIC01M silicon carbide TO-39, UVC
    Text: UVC-selective SiC based UV sensor SIC01M-C Features • UVC Photodiode with medium-sized photoactive area • Good compromise between signal strength and price • Silicon Carbide based chip for extreme irradiation hardness • Spectral Response in accordance with DVGW W 294


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    PDF SIC01M-C uvc photodiode uv sensor SIC01M silicon carbide TO-39, UVC

    SG01S

    Abstract: uv sensor silicon carbide
    Text: Ultraviolet selective SiC based UV sensor SG01S Features • Broad Band UVA-UVB-UVC Photodiode • Optimally suited for UVC high radiation control • Silicon Carbide based chip for extreme irradiation hardness • Intrinsic visible blindness due to wide-bandgap semiconductor material


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    PDF SG01S SG01S uv sensor silicon carbide

    silicon carbide

    Abstract: No abstract text available
    Text: Ultraviolet selective SiC based UV sensor SG01L-5 Features • Broad band UVA-UVB-UVC photodiode in TO5 metal package • Silicon Carbide based chip for extreme radiation hardness • Chip dimensions of 1 x 1 mm2 with 0.96 mm2 active area • Intrinsic visible blindness due to wide-bandgap semiconductor material


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    PDF SG01L-5 S280nm S400nm silicon carbide

    ultraviolet sensor

    Abstract: uv sensor silicon carbide
    Text: Ultraviolet selective SiC based UV sensor SG01M Features • Broad band UVA-UVB-UVC photodiode in TO18 metal package • Silicon Carbide based chip for extreme radiation hardness • Chip dimensions of 0.5 x 0.5 mm2 with 0.22 mm2 active area • Intrinsic visible blindness due to wide-bandgap semiconductor material


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    PDF SG01M S280nm S400nm ultraviolet sensor uv sensor silicon carbide

    uv sensor

    Abstract: silicon carbide
    Text: UVC-selective SiC based UV sensor SG01S-C Features • UVC Photodiode with small photoactive area • Optimally suited for detection and control of strong UVC radiation • Silicon Carbide based chip for extreme irradiation hardness • Spectral Response in accordance with DVGW W 294


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    PDF SG01S-C uv sensor silicon carbide

    SG01S-5

    Abstract: silicon carbide SG01S
    Text: Ultraviolet selective SiC based UV sensor with large TO5 housing for broad incident angle SG01S-5 Features • Broad Band UVA-UVB-UVC Photodiode • Optimally suited for UVC high radiation control • Silicon Carbide based chip for extreme irradiation hardness


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    PDF SG01S-5 SG01S-5 silicon carbide SG01S

    ultraviolet sensor

    Abstract: silicon carbide
    Text: Ultraviolet selective SiC based UV sensor SG01S-ISO Features • Two insulated pins • Broad Band UVA-UVB-UVC Photodiode • Optimally suited for UVC high radiation control • Silicon Carbide based chip for extreme irradiation hardness • Intrinsic visible blindness due to wide-bandgap semiconductor material


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    PDF SG01S-ISO ultraviolet sensor silicon carbide

    SG01L-C

    Abstract: silicon carbide TO-39, UVC
    Text: UVC-selective SiC based UV sensor SG01L-C Features • UVC Photodiode with large photoactive area • Optimally suited for weak UVC intensities • Silicon Carbide based chip for extreme irradiation hardness • Spectral response in accordance with DVGW W 294


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    PDF SG01L-C SG01L-C silicon carbide TO-39, UVC

    SG01M-C

    Abstract: silicon carbide
    Text: UVC-selective SiC based UV sensor SG01M-C Features • UVC Photodiode with medium-sized photoactive area • Good compromise between signal strength and price • Silicon Carbide based chip for extreme irradiation hardness • Spectral Response in accordance with DVGW W 294


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    PDF SG01M-C SG01M-C silicon carbide

    SG01S-C18

    Abstract: uv sensor silicon carbide SG01
    Text: UVC-selective SiC based UV sensor SG01S-C18 Features • UVC Photodiode with small photoactive area • Optimally suited for detection and control of strong UVC radiation • Silicon Carbide based chip for extreme irradiation hardness • Spectral Response in accordance with DVGW W 294


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    PDF SG01S-C18 SG01S-C18 uv sensor silicon carbide SG01

    ultraviolet sensor

    Abstract: uv sensor SUN SENSOR 380nm
    Text: Ultraviolet selective SiC based Stainless Steel UV sensor SIC02S Features • Optimally suited for UVC high radiation control • Silicon Carbide based chip for extreme irradiation hardness • stainless steel V2A housing material • fluid pressure up to 6 bar


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    PDF SIC02S RS232 ultraviolet sensor uv sensor SUN SENSOR 380nm

    ultraviolet sensors

    Abstract: uv sensor ultraviolet sensor uvb sensor
    Text: Ultraviolet selective SiC based UV sensor SIC01S Features • • • • • • Silicon Carbide based chip for extreme irradiation hardness Intrinsic visible blindness due to wide-bandgap semiconductor material TO-18 metal package with 0,054 mm2 active chip area


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    PDF SIC01S ultraviolet sensors uv sensor ultraviolet sensor uvb sensor

    uv flame sensor

    Abstract: FLAME SENSOR UV ultraviolet sensor uv photodiode sic01m ultraviolet sensor flame cree Sic uv sensor Ultraviolet SIC01M
    Text: Ultraviolet selective SiC based UV sensor SIC01M – LENS Features • Broad band UVA-UVB-UVC photodiode for weak and directed radiation • Perfectly suited for flame sensing • Silicon Carbide based chip for extreme low noise and dark current • Chip dimensions of 0.5 x 0.5 mm2 with 0.22 mm2 active area


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    PDF SIC01M S280nm S400nm uv flame sensor FLAME SENSOR UV ultraviolet sensor uv photodiode sic01m ultraviolet sensor flame cree Sic uv sensor Ultraviolet SIC01M