MSK4105
Abstract: No abstract text available
Text: MIL-PRF-38534 & 38535 CERTIFIED FACILITY HIGH TEMPERATURE 600V/10A HERMETIC HALF BRIDGE 4105 FEATURES: Operational From -55°C to 190°C Half Bridge Configuration Silicon Carbide Power MOSFETS Silicon Carbide Recovery Diodes 600V Rated Voltage 20A Continuous Output Current at Tc=25°C
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MIL-PRF-38534
00V/10A
MIL-PRF-38534
MSK4105
MIL-PRF-38534,
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SG01S
Abstract: uv flame sensor SUN SENSOR ultraviolet sensor flame FLAME SENSOR UV ultraviolet sensor uvc photodiode TO-39, UVC SG01S-ISO "smax"
Text: UV-index sensor based on SiC EryF* Features • Special UV-index sensor, precision up to +/- 0.5 UVI • Optimally suited for accurate sun-UV dosimetry • Also suited for sun tanning bank dosimetry • Silicon Carbide based chip for radiation hardness • Intrinsic visible blindness due to wide-bandgap semiconductor material
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SG01S-ISO
SG01S
uv flame sensor
SUN SENSOR
ultraviolet sensor flame
FLAME SENSOR UV
ultraviolet sensor
uvc photodiode
TO-39, UVC
SG01S-ISO
"smax"
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aircraft altimeter
Abstract: c-mac 1553 CMAC 1553 CMAC blood gas C-MAC MicroTechnology extreme low temperature chip carrier HTCC data sheet Tier NR30
Text: HIGH TEMPERATURE ELECTRONIC SOLUTIONS C-MAC is a world leader in the design and manufacture of high reliability electronic modules for harsh environments ‘C-MAC’s multi-chip modules can extend the life of electronic systems in harsh environments’ Extensive experience in our core markets
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MIL-STD-1553
aircraft altimeter
c-mac 1553
CMAC 1553
CMAC
blood gas
C-MAC MicroTechnology
extreme low temperature chip carrier
HTCC data sheet
Tier
NR30
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SIC01S-HT
Abstract: silicon carbide UV photodiode
Text: Ultraviolet selective SiC based UV sensor SIC01S-HT Features • Operating Temperature up to 170°C • Broad Band UVA-UVB-UVC Photodiode • Optimally suited for UVC high radiation control • Silicon Carbide based chip for extreme irradiation hardness •
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SIC01S-HT
SIC01S-HT
silicon carbide
UV photodiode
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SG01S-HT
Abstract: uv sensor silicon carbide SG01S
Text: Ultraviolet selective SiC based UV sensor SG01S-HT Features • Operating Temperature up to 170°C • Broad Band UVA-UVB-UVC Photodiode • Optimally suited for UVC high radiation control • Silicon Carbide based chip for extreme irradiation hardness •
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SG01S-HT
SG01S-HT
uv sensor
silicon carbide
SG01S
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infineon radar
Abstract: silicon carbide CH-8047 P-2720-093
Text: ONE STEP BEYOND t h i n Q ! T M S i l i co n Ca r b i d e P o w e r D i o d e s www.infineon.com Never stop thinking. THE CUTTING EDGE I m a g i n e a s e m i c o n d u c t o r m a t e r i a l that can withstand the heat of a jet engine and the cold of outer space. In fact, why imagine – when it’s
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B112-H7799-X-X-7600
DK-2750
infineon radar
silicon carbide
CH-8047
P-2720-093
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ceramo paste
Abstract: uv sensor ultraviolet sensor CO Sensor
Text: Ultraviolet selective SiC based UV sensor UV_Water_1 Features • ¼ Stainless Steel Sensor Probe • compliance with IP65 • 15 bar water proof • Broad Band UVA-UVB-UVC Photodiode • Optimally suited for UVC high radiation control • Silicon Carbide based chip for extreme irradiation hardness
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IC 7448
Abstract: data sheet IC 7448 semiconductor 7448 FM362 U3158 CH-8022 Research Center Module ic 70184 PLC based PROJECTS transistor HJ 388
Text: Semelab High Reliability Modules Worldwide Sales Representatives by Dr Steve Jones Semelab is able to offer a custom range of power modules incorporating various circuit topologies capable of operating in extreme environments whilst still offering excellent thermal
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uv photodiode SIC01L-18
Abstract: SIC01L-18 cree ultraviolet uv sensor
Text: Ultraviolet selective SiC based UV sensor SIC01L-18 Features • Broad band UVA-UVB-UVC photodiode in TO18 metal package • Silicon Carbide based chip for extreme radiation hardness • Chip dimensions of 1 x 1 mm2 with 0.96 mm2 active area • Intrinsic visible blindness due to wide-bandgap semiconductor material
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SIC01L-18
S280nm
S400nm
uv photodiode SIC01L-18
SIC01L-18
cree ultraviolet
uv sensor
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uv sensor
Abstract: SIC01L-5 SUN SENSOR silicon carbide
Text: Ultraviolet selective SiC based UV sensor SIC01L-5 Features • Broad band UVA-UVB-UVC photodiode in TO5 metal package • Silicon Carbide based chip for extreme radiation hardness • Chip dimensions of 1 x 1 mm2 with 0.96 mm2 active area • Intrinsic visible blindness due to wide-bandgap semiconductor material
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SIC01L-5
S280nm
S400nm
uv sensor
SIC01L-5
SUN SENSOR
silicon carbide
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TO-39, UVC
Abstract: SIC01L-5-C uvc photodiode uv sensor silicon carbide
Text: UVC-selective SiC based UV sensor SIC01L-5-C Features • UVC Photodiode with large photoactive area • Optimally suited for weak UVC intensities • Silicon Carbide based chip for extreme irradiation hardness • Spectral response in accordance with DVGW W 294
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SIC01L-5-C
TO-39, UVC
SIC01L-5-C
uvc photodiode
uv sensor
silicon carbide
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uvc photodiode
Abstract: uv sensor SIC01M silicon carbide TO-39, UVC
Text: UVC-selective SiC based UV sensor SIC01M-C Features • UVC Photodiode with medium-sized photoactive area • Good compromise between signal strength and price • Silicon Carbide based chip for extreme irradiation hardness • Spectral Response in accordance with DVGW W 294
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SIC01M-C
uvc photodiode
uv sensor
SIC01M
silicon carbide
TO-39, UVC
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SG01S
Abstract: uv sensor silicon carbide
Text: Ultraviolet selective SiC based UV sensor SG01S Features • Broad Band UVA-UVB-UVC Photodiode • Optimally suited for UVC high radiation control • Silicon Carbide based chip for extreme irradiation hardness • Intrinsic visible blindness due to wide-bandgap semiconductor material
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SG01S
SG01S
uv sensor
silicon carbide
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silicon carbide
Abstract: No abstract text available
Text: Ultraviolet selective SiC based UV sensor SG01L-5 Features • Broad band UVA-UVB-UVC photodiode in TO5 metal package • Silicon Carbide based chip for extreme radiation hardness • Chip dimensions of 1 x 1 mm2 with 0.96 mm2 active area • Intrinsic visible blindness due to wide-bandgap semiconductor material
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SG01L-5
S280nm
S400nm
silicon carbide
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ultraviolet sensor
Abstract: uv sensor silicon carbide
Text: Ultraviolet selective SiC based UV sensor SG01M Features • Broad band UVA-UVB-UVC photodiode in TO18 metal package • Silicon Carbide based chip for extreme radiation hardness • Chip dimensions of 0.5 x 0.5 mm2 with 0.22 mm2 active area • Intrinsic visible blindness due to wide-bandgap semiconductor material
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SG01M
S280nm
S400nm
ultraviolet sensor
uv sensor
silicon carbide
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uv sensor
Abstract: silicon carbide
Text: UVC-selective SiC based UV sensor SG01S-C Features • UVC Photodiode with small photoactive area • Optimally suited for detection and control of strong UVC radiation • Silicon Carbide based chip for extreme irradiation hardness • Spectral Response in accordance with DVGW W 294
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SG01S-C
uv sensor
silicon carbide
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SG01S-5
Abstract: silicon carbide SG01S
Text: Ultraviolet selective SiC based UV sensor with large TO5 housing for broad incident angle SG01S-5 Features • Broad Band UVA-UVB-UVC Photodiode • Optimally suited for UVC high radiation control • Silicon Carbide based chip for extreme irradiation hardness
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SG01S-5
SG01S-5
silicon carbide
SG01S
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ultraviolet sensor
Abstract: silicon carbide
Text: Ultraviolet selective SiC based UV sensor SG01S-ISO Features • Two insulated pins • Broad Band UVA-UVB-UVC Photodiode • Optimally suited for UVC high radiation control • Silicon Carbide based chip for extreme irradiation hardness • Intrinsic visible blindness due to wide-bandgap semiconductor material
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SG01S-ISO
ultraviolet sensor
silicon carbide
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SG01L-C
Abstract: silicon carbide TO-39, UVC
Text: UVC-selective SiC based UV sensor SG01L-C Features • UVC Photodiode with large photoactive area • Optimally suited for weak UVC intensities • Silicon Carbide based chip for extreme irradiation hardness • Spectral response in accordance with DVGW W 294
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SG01L-C
SG01L-C
silicon carbide
TO-39, UVC
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SG01M-C
Abstract: silicon carbide
Text: UVC-selective SiC based UV sensor SG01M-C Features • UVC Photodiode with medium-sized photoactive area • Good compromise between signal strength and price • Silicon Carbide based chip for extreme irradiation hardness • Spectral Response in accordance with DVGW W 294
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SG01M-C
SG01M-C
silicon carbide
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SG01S-C18
Abstract: uv sensor silicon carbide SG01
Text: UVC-selective SiC based UV sensor SG01S-C18 Features • UVC Photodiode with small photoactive area • Optimally suited for detection and control of strong UVC radiation • Silicon Carbide based chip for extreme irradiation hardness • Spectral Response in accordance with DVGW W 294
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SG01S-C18
SG01S-C18
uv sensor
silicon carbide
SG01
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ultraviolet sensor
Abstract: uv sensor SUN SENSOR 380nm
Text: Ultraviolet selective SiC based Stainless Steel UV sensor SIC02S Features • Optimally suited for UVC high radiation control • Silicon Carbide based chip for extreme irradiation hardness • stainless steel V2A housing material • fluid pressure up to 6 bar
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SIC02S
RS232
ultraviolet sensor
uv sensor
SUN SENSOR
380nm
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ultraviolet sensors
Abstract: uv sensor ultraviolet sensor uvb sensor
Text: Ultraviolet selective SiC based UV sensor SIC01S Features • • • • • • Silicon Carbide based chip for extreme irradiation hardness Intrinsic visible blindness due to wide-bandgap semiconductor material TO-18 metal package with 0,054 mm2 active chip area
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SIC01S
ultraviolet sensors
uv sensor
ultraviolet sensor
uvb sensor
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uv flame sensor
Abstract: FLAME SENSOR UV ultraviolet sensor uv photodiode sic01m ultraviolet sensor flame cree Sic uv sensor Ultraviolet SIC01M
Text: Ultraviolet selective SiC based UV sensor SIC01M – LENS Features • Broad band UVA-UVB-UVC photodiode for weak and directed radiation • Perfectly suited for flame sensing • Silicon Carbide based chip for extreme low noise and dark current • Chip dimensions of 0.5 x 0.5 mm2 with 0.22 mm2 active area
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SIC01M
S280nm
S400nm
uv flame sensor
FLAME SENSOR UV
ultraviolet sensor
uv photodiode sic01m
ultraviolet sensor flame
cree Sic
uv sensor
Ultraviolet
SIC01M
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