SILICON -FIELD TRANSISTOR P CHANNEL Search Results

MFE5000

Contextual Info: MFE5 0 0 0 silicon SILICON P-CHANNEL ENHANCEMENT MOS FIELD EFFECT QUAD TRANSISTOR MOS FIELD-EFFECT QUAD TRANSISTOR P-CHANNEL • Monolithic Construction Provides Improved Temperature Tracking • Four Field Effect Transistors in One Package Cut Assembly Costs

2N6897

Contextual Info: 2N6897 -12A, -100V, P-Channel Enhancement Mode Power MOS Field Effect Transistor January 1997 Features Description • -12A, -100V The 2N6897 is an P-Channel enhancement mode silicon gate power MOS field effect transistor designed for applications such as switching regulators, switching converters,

MPF256

Abstract: field-effect transistor
Contextual Info: MPF256 silicon Advance Information JUNCTION FIELD-EFFECT TRANSISTOR SILICON IM-CHANNEL JUNCTION FIELD-EFFECT TRANSISTOR S IL IC O N N -C H A N N E L . . . d e p le tio n m ode ju n c tio n fie ld -e ffe c t tra n s is to r designed f o r lo w nois* general a m p lifie r a p p lic a tio n s .

Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 3SK131 RF AMP. FOR VHF TV TUNER N-CHANNEL SILICON DUAL-GATE MOS FIELD-EFFECT TRANSISTOR 4PIN MINI MOLD PACKAGE DIMENSIONS FEATURES • Suitable for use as RF amplifier in VHF TV tuner. • Low Crss : 0 .0 5 pF T Y P .

2SK508

Abstract: 076z marking K52 Vus-50V
Contextual Info: NEC Junction Field Effect Transistor 2SK508 N-Channel Silicon Junction Field Effect Transistor High Frequency Amplifier # */FEA TU RES I PACKAGE DIMENSIONS U n it . mm n y fs|2 (gn.2) ~26 mS T Y P . ( V d s - 5.0 V, V GS-0 , f = 1.0 kHz) 2 . 8 ± 0.2 o1fl.Ci„ r l ' 0

AN569 in Motorola Power Applications

Abstract: MTM20P08 motorola an569 Motorola ON mosfet DS3700 AN569 MTH20P08 tmos fet c3709 MTH20PI0
Contextual Info: Order this data sheet by MTH20P08/D MOTOROLA SEMICONDUCTOR~ -.z TECHNICAL DATA Designer’s Data sheet Power Field Effect Transistor P-Channel Enhancement Mode Silicon Gate TMOS These TMOS high speed Power power tors, converters, Silicon solenoid Designer’s

Contextual Info: DATA SHEET NEC MOS FIELD EFFECT TRANSISTOR 3SK135A RF AMP. FOR UHF TV TUNER N-CHANNEL SILICON DUAL-GATE MOS FIELD-EFFECT TRANSISTOR 4PIN MINI MOLD FEATURES • Suitable for use as RF am plifier in UHF TV tuner. • Low Crss : 0 . 0 2 pF T Y P . • High G Ps : 18 dB TYP.

tpc8406

Abstract: TPC8406-H ccfl inverter circuit diagrams
Contextual Info: TPC8406-H TOSHIBA Field Effect Transistor Silicon P/N-Channel MOS Type P-Channel／N-Channel Ultra-High-Speed U-MOSIII TPC8406-H High Efficiency DC／DC Converter Applications Notebook PC Applications Portable Equipment Applications CCFL Inverter Applications

tpc8406

Abstract: TPC8406-H
Contextual Info: TPC8406-H TOSHIBA Field Effect Transistor Silicon P/N-Channel MOS Type P-Channel/N-Channel Ultra-High-Speed U-MOSIII TPC8406-H High Efficiency DC-DC Converter Applications Notebook PC Applications Portable Equipment Applications CCFL Inverter Applications

p-channel mosfet transistor low power

Abstract: marking code RY SOT marking code 16V diode
Contextual Info: RY INA LIM E PR Central CMLDM8120 TM Semiconductor Corp. SURFACE MOUNT PICOminiTM P-CHANNEL ENHANCEMENT-MODE SILICON MOSFET DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLDM8120 is an Enhancement-mode P-Channel Field Effect Transistor, manufactured by the P-Channel DMOS Process, designed for

p-channel mosfet transistor low power

Abstract: mosfet low vgs CEDM8001 p-channel DMOS P-channel MOSFET VGS -25V P-channel power mosfet 30V
Contextual Info: CEDM8001 SURFACE MOUNT P-CHANNEL ENHANCEMENT-MODE SILICON MOSFET Central TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CEDM8001 is an Enhancement-mode P-Channel Field Effect Transistor, manufactured by the P-Channel DMOS Process, designed for high speed pulsed amplifier and driver applications.

2N6896

Abstract: TB334
Contextual Info: 2N6896 Data Sheet November 1998 File Number -6A, -100V, 0.600 Ohm, P-Channel Power MOSFET Features The 2N6896 is a P-Channel enhancement mode silicon gate power MOS field effect transistor designed for high-speed applications such as switching regulators, switching

Contextual Info: IRF9510 Semiconductor Data Sheet April 1999 -3.0A, -100V, 1.200 Ohm, P-Channel Power MOSFET This P-Channel enhancem ent mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested and guaranteed to withstand a specified level of

tpc8406

Abstract: RX4M50FM60 receiver datasheet TPC8406-H TPC8406H
Contextual Info: TPC8406-H TOSHIBA Field Effect Transistor Silicon P/N-Channel MOS Type P-Channel／N-Channel Ultra-High-Speed U-MOSIII TPC8406-H High Efficiency DC／DC Converter Applications Notebook PC Applications Unit: mm Portable Equipment Applications CCFL Inverter Applications

IRFD9110

Abstract: TA17541
Contextual Info: IRFD9110 Data Sheet January 2002 0.7A, 100V, 1.200 Ohm, P-Channel Power MOSFET Features • 0.7A, 100V This P-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of

Contextual Info: CMRDM7590 SURFACE MOUNT DUAL P-CHANNEL ENHANCEMENT-MODE SILICON MOSFET Central TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CMRDM7590 is an Enhancement-mode Dual P-Channel Field Effect Transistor designed for high speed pulsed amplifier and driver applications. This MOSFET offers Low

IRFD9220

Contextual Info: IRFD9220 Data Sheet January 2002 0.6A, 200V, 1.500 Ohm, P-Channel Power MOSFET Features • 0.6A, 200V This P-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of

2N6896

Abstract: TB334
Contextual Info: 2N6896 Data Sheet December 2001 -6A, -100V, 0.600 Ohm, P-Channel Power MOSFET Features • -6A, -100V The 2N6896 is a P-Channel enhancement mode silicon gate power MOS field effect transistor designed for high-speed applications such as switching regulators, switching

SSM6P39TU

Contextual Info: SSM6P39TU TOSHIBA Field-Effect Transistor Silicon P Channel MOS Type SSM6P39TU Unit: mm ○ Power Management Switch Applications ○ High-Speed Switching Applications Absolute Maximum Ratings Ta = 25 °C (Q1,Q2 Common) (Note) Characteristic Symbol Rating

Contextual Info: SSM6P39TU TOSHIBA Field-Effect Transistor Silicon P Channel MOS Type SSM6P39TU Unit: mm ○ Power Management Switch Applications ○ High-Speed Switching Applications Absolute Maximum Ratings Ta = 25 °C (Q1,Q2 Common) (Note) Characteristic Symbol Rating

TPCA8107-H

Contextual Info: TPCA8107-H TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type Ultra-High-speed U-MOSIII TPCA8107-H High Efficiency DC／DC Converter Applications Notebook PC Applications Portable Equipment Applications CCFL Inverter Applications Unit: mm 0.4±0.1

n38 transistor

Abstract: N38 Q TRANSISTOR N38 E 38n38 n38a
Contextual Info: 2SK3439 TOSHIBA TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE U-MOS 41 2SK3439 TENTATIVE INDUSTRIAL HIGH SPEED , HIGH CURRENT SWITCHING APPLICATIONS. a p p l ic a t i o n s _ UNIT ; DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVË APPLICATIONS

Contextual Info: TO SHIBA 2SJ200 Field Effect Transistor Silicon P Channel MOS Type rc-MOS II Audio Frequency Power Amplifier Application Features • High Breakdown Voltage - VDSS = -180V (Min.) • High Forward Transfer Admittance - Y fs ' = 4 . O S (T y p .) • Complementary to 2SK1529

TPC8405

Contextual Info: TPC8405 TOSHIBA Field Effect Transistor Silicon N, P Channel MOS Type P Channel U−MOS IV/N Channel U-MOS III TPC8405 Lithium Ion Secondary Battery Applications Portable Equipment Applications Notebook PC Applications Unit: mm z Low drain-source ON resistance : P Channel RDS (ON) = 25 mΩ (typ.)