SiHG47N60S
Abstract: ktp12
Text: SiHG47N60S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Low Figure-of-Merit Ron x Qg 650 • 100 % Avalanche Tested RoHS 216 • Ultra Low Gate Charge COMPLIANT Qgs (nC) 39 • Ultra Low Ron Qgd (nC) 57 • Compliant to RoHS Directive 2002/95/EC
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SiHG47N60S
2002/95/EC
O-247AC
SiHG47N60S-E3
11-Mar-11
ktp12
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pfc power supply
Abstract: No abstract text available
Text: SiHG47N60S www.vishay.com Vishay Siliconix S Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Generation One 650 RDS(on) max. at 25 °C () VGS = 10 V 0.07 • Low Figure-of-Merit Ron x Qg RoHS COMPLIANT Qg max. (nC) 216 • 100 % Avalanche Tested
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SiHG47N60S
2002/95/EC
O-247AC
O-247AC
SiHG47N60S-E3
11-Mar-11
pfc power supply
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SiHG47N60S
Abstract: TRANSFORMER 220 to 14V ktp12 SIHG47N60S-E3
Text: SiHG47N60S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Low Figure-of-Merit Ron x Qg 650 V RDS(on) () VGS = 10 V 0.07 Qg (Max.) (nC) 216 Qgs (nC) 39 Qgd (nC) • 100 % Avalanche Tested • Gate Charge Improved • Lowest RDS(on) for TO-247AC Package
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SiHG47N60S
O-247AC
2002/95/EC
O-247AC
SiHG47N60S-E3
18-Jul-08
TRANSFORMER 220 to 14V
ktp12
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Untitled
Abstract: No abstract text available
Text: V ishay I ntertechn o l o g y, I nc . MOSFETs - Able to Withstand High Energy Pulses AND TEC I INNOVAT O L OGY SiHG47N60S-E3 N HN High-Voltage Power mosfets O 19 62-2012 600-V N-Channel MOSFETs Use Super Junction Technology to Minimize On-Resistance and Withstand High Energy Pulses
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SiHG47N60S-E3
2002/95/EC
SiHG47N60S
S11-1882-Rev.
26-Sep-11
VMN-PT0239-1112
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Untitled
Abstract: No abstract text available
Text: SiHG47N60S www.vishay.com Vishay Siliconix S Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Generation One 650 RDS(on) max. at 25 °C () VGS = 10 V 0.07 • Low Figure-of-Merit Ron x Qg RoHS COMPLIANT Qg max. (nC) 216 • 100 % Avalanche Tested
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SiHG47N60S
2002/95/EC
O-247AC
SiHG47electronic
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
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sihg47n60
Abstract: No abstract text available
Text: SiHG47N60S www.vishay.com Vishay Siliconix S Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Generation One 650 RDS(on) max. at 25 °C () VGS = 10 V 0.07 • Low Figure-of-Merit Ron x Qg RoHS COMPLIANT Qg max. (nC) 216 • 100 % Avalanche Tested
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Original
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PDF
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SiHG47N60S
2002/95/EC
O-247AC
O-247AC
SiHG47N60S-E3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
sihg47n60
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sihg47n60s-e3
Abstract: SIHG47N60S
Text: SiHG47N60S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Low Figure-of-Merit Ron x Qg 650 V RDS(on) () VGS = 10 V 0.07 Qg (Max.) (nC) 216 Qgs (nC) 39 Qgd (nC) • 100 % Avalanche Tested • Gate Charge Improved • Lowest RDS(on) for TO-247AC Package
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Original
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PDF
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SiHG47N60S
O-247AC
2002/95/EC
O-247AC
SiHG47N60S-E3
18-Jul-08
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AN609
Abstract: SiHG47N60S
Text: SiHG47N60S_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter
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SiHG47N60S
AN609,
9561m
2375m
7316m
0071m
AN609
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Ultra Low Qg High Current
Abstract: No abstract text available
Text: V ishay I ntertechn o l o g y, I nc . MOSFETs - Able to Withstand High Energy Pulses AND TEC I INNOVAT O L OGY SiHG47N60S-E3 N HN High-Voltage Power mosfet O 19 62-2012 600-V N-Channel MOSFETs Use Super Junction Technology to Minimize On-Resistance and Withstand High Energy Pulses
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Original
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PDF
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SiHG47N60S-E3
2002/95/EC
SiHG47N60S
S11-1882-Rev.
26-Sep-11
VMN-PT0239-1112
Ultra Low Qg High Current
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sihg47n60s-e3
Abstract: power MOSFET INVERTER
Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . HIGH-VOLTAGE POWER MOSFETs Devices Use Vishay Super Junction Technology to Minimize On-Resistance and Withstand High Energy Pulses KEY BENEFITS • 47 A, 600 V, RDS on max. = 70 mW at VGS = 10 V • Low gate charge: Qg max. = 216 nC
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SiHG47N
2002/95/EC
SiHG47N60S
VMN-PT0239-1010
sihg47n60s-e3
power MOSFET INVERTER
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