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    Vishay Siliconix SIHD6N80AE-GE3

    MOSFET N-CH 800V 5A DPAK
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SIHD6N80AE-GE3 Tube 3,014 1
    • 1 $1.71
    • 10 $1.71
    • 100 $0.76093
    • 1000 $0.60941
    • 10000 $0.48554
    		Buy Now
    New Advantage Corporation SIHD6N80AE-GE3 3,000 1
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.6465
    		Buy Now

    Vishay Siliconix SIHD240N65E-GE3

    E SERIES POWER MOSFET 650 V (D-
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SIHD240N65E-GE3 Tube 3,000 1
    • 1 $3.75
    • 10 $2.832
    • 100 $2.3479
    • 1000 $2.09414
    • 10000 $2.02005
    		Buy Now

    Vishay Siliconix SIHD14N60ET5-GE3

    N-CHANNEL 600V
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SIHD14N60ET5-GE3 Cut Tape 2,996 1
    • 1 $3.02
    • 10 $1.962
    • 100 $1.3565
    • 1000 $1.0145
    • 10000 $1.0145
    		Buy Now

    Vishay Siliconix SIHD3N50D-GE3

    MOSFET N-CH 500V 3A TO252AA
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SIHD3N50D-GE3 Tube 2,980 1
    • 1 $1.31
    • 10 $0.825
    • 100 $0.5449
    • 1000 $0.38612
    • 10000 $0.38612
    		Buy Now

    Vishay Siliconix SIHD11N80AE-T4-GE3

    N-CHANNEL 800V
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SIHD11N80AE-T4-GE3 Cut Tape 2,980 1
    • 1 $2.53
    • 10 $1.628
    • 100 $1.1142
    • 1000 $0.82363
    • 10000 $0.82363
    		Buy Now
    Find more SIHD price and stock on Findchips.com

    SIHD Datasheets (39)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SIHD11N80AE-GE3
    		Vishay Siliconix MOSFET N-CH 800V 8A TO252AA Original PDF
    SIHD11N80AE-T1-GE3
    		Vishay Siliconix N-CHANNEL 800V Original PDF
    SIHD11N80AE-T4-GE3
    		Vishay Siliconix N-CHANNEL 800V Original PDF
    SIHD12N50E-GE3
    		Vishay Siliconix Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CHAN 500V DPAK Original PDF
    SIHD14N60E-BE3
    		Vishay Siliconix MOSFET N-CH 600V 13A TO252AA Original PDF
    SIHD14N60E-GE3
    		Vishay Siliconix Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CHANNEL 600V 13A DPAK Original PDF
    SIHD14N60ET1-GE3
    		Vishay Siliconix N-CHANNEL 600V Original PDF
    SIHD14N60ET4-GE3
    		Vishay Siliconix N-CHANNEL 600V Original PDF
    SIHD14N60ET5-GE3
    		Vishay Siliconix N-CHANNEL 600V Original PDF
    SIHD180N60E-GE3
    		Vishay Siliconix Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET E SERIES 600V DPAK (TO-25 Original PDF
    SIHD186N60EF-GE3
    		Vishay Siliconix MOSFET N-CH 600V 19A DPAK Original PDF
    SIHD1K4N60E-GE3
    		Vishay Siliconix Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH DPAK TO-252 Original PDF
    SIHD240N60E-GE3
    		Vishay Siliconix Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CHAN 600V DPAK TO-252 Original PDF
    SIHD2N80AE-GE3
    		Vishay Siliconix MOSFET N-CH 800V 2.9A DPAK Original PDF
    SIHD2N80E-GE3
    		Vishay Siliconix Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 800V 2.8A DPAK Original PDF
    SIHD3N50D-BE3
    		Vishay Siliconix MOSFET N-CH 500V 3A DPAK Original PDF
    SIHD3N50D-E3
    		Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 500V 3A TO252 DPAK Original PDF
    SIHD3N50D-GE3
    		Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 500V 3A TO252 DPAK Original PDF
    SIHD3N50DT1-GE3
    		Vishay Siliconix MOSFET N-CH 500V 3A DPAK Original PDF
    SIHD3N50DT4-GE3
    		Vishay Siliconix MOSFET N-CH 500V 3A DPAK Original PDF

    SIHD Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: SiHD7N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • • • • • • 650 RDS(on) max. at 25 °C () VGS = 10 V Qg max. (nC) 0.6 40 Qgs (nC) 5 Qgd (nC) 9 Configuration Single Low Figure-of-Merit (FOM) Ron x Qg


    Original     		SiHD7N60E 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Contextual Info: SiHD6N62E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Low Figure-of-Merit (FOM) Ron x Qg 700 RDS(on) max. at 25 °C () VGS = 10 V Qg max. (nC) • • • • • 0.9 34 Qgs (nC) 4 Qgd (nC) 8 Configuration


    Original     		SiHD6N62E 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Contextual Info: SiHD3N50DA_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter


    Original     		SiHD3N50DA AN609, 8755u 6698m 8998m 7460m 09-Jan-14 PDF

    Contextual Info: SiHD12N50E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Low figure-of-merit (FOM) Ron x Qg 550 RDS(on) max. at 25 °C (Ω) VGS = 10 V Qg max. (nC) • • • • • 0.380 50 Qgs (nC) 6 Qgd (nC) 10


    Original     		SiHD12N50E O-252) 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Contextual Info: SiHD6N65E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Low Figure-of-Merit (FOM) Ron x Qg 700 RDS(on) max. at 25 °C () VGS = 10 V Qg max. (nC) • • • • • 0.6 48 Qgs (nC) 6 Qgd (nC) 11 Configuration


    Original     		SiHD6N65E 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Contextual Info: SiHD5N50D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Optimal Design - Low Area Specific On-Resistance - Low Input Capacitance (Ciss) - Reduced Capacitive Switching Losses - High Body Diode Ruggedness


    Original     		SiHD5N50D O-252) 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Contextual Info: SiHD_U3N50D_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter


    Original     		U3N50D AN609, 6971m 0262m 1677m 8975m 0909m 3864m 8367m 3398m PDF

    Contextual Info: SiHD3N50DA www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Optimal design - Low area specific on-resistance - Low input capacitance (Ciss) - Reduced capacitive switching losses - High body diode ruggedness


    Original     		SiHD3N50DA O-252) 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Contextual Info: SiHD3N50D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Optimal Design - Low Area Specific On-Resistance - Low Input Capacitance (Ciss) - Reduced Capacitive Switching Losses - High Body Diode Ruggedness


    Original     		SiHD3N50D O-252) 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Contextual Info: SiHD12N50E_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter


    Original     		SiHD12N50E AN609, 2845u 1569m 1891m 8738m 07-Oct-14 PDF

    Contextual Info: SiHD6N62E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Low figure-of-merit (FOM) Ron x Qg 700 RDS(on) max. at 25 °C (Ω) VGS = 10 V Qg max. (nC) • • • • • 0.9 34 Qgs (nC) 4 Qgd (nC) 8 Configuration


    Original     		SiHD6N62E 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Contextual Info: SiHD7N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • • • • • • 650 RDS(on) max. at 25 °C (Ω) VGS = 10 V Qg max. (nC) 0.6 40 Qgs (nC) 5 Qgd (nC) 9 Configuration Single Low figure-of-merit (FOM) Ron x Qg


    Original     		SiHD7N60E 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Contextual Info: SiHD3N50D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Optimal Design - Low Area Specific On-Resistance - Low Input Capacitance (Ciss) - Reduced Capacitive Switching Losses - High Body Diode Ruggedness


    Original     		SiHD3N50D O-252) 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    sihd3n50

    Abstract: SIHD3N50D-GE3
    Contextual Info: SiHD3N50D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Optimal Design - Low Area Specific On-Resistance - Low Input Capacitance (Ciss) 550 RDS(on) max. () at 25 °C VGS = 10 V 3.2 Qg (max.) (nC) 20


    Original     		SiHD3N50D O-252) 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 sihd3n50 SIHD3N50D-GE3 PDF

    Contextual Info: SiHD7N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • • • • • • 650 RDS(on) max. at 25 °C () VGS = 10 V Qg max. (nC) 0.6 40 Qgs (nC) 5 Qgd (nC) 9 Configuration Single Low Figure-of-Merit (FOM) Ron x Qg


    Original     		SiHD7N60E 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Piher International

    Abstract: B424G potentiometer Citec 100r MARKING CODE SMD S111 T72 marking Piher* trimmer
    Contextual Info: p, - a M E C C IT E C POTENTIOMETERS INDUCTORS, SIHDs SWITCHES, NETWORKS ENCODERS POWER COMPONENTS SMD Economy Trimmers TYP E 3150 SERIES vV ' This is the ultimate in light weight. low profile skeleton s.ni. poten­ tiometers ottered in a range ot two and three tennin.il packages, oitset


    OCR Scan     		708-390-6680/Fax b4247DD Piher International B424G potentiometer Citec 100r MARKING CODE SMD S111 T72 marking Piher* trimmer PDF

    Contextual Info: SiHD6N62E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Low Figure-of-Merit (FOM) Ron x Qg 700 RDS(on) max. at 25 °C () VGS = 10 V Qg max. (nC) • • • • • 0.9 34 Qgs (nC) 4 Qgd (nC) 8 Configuration


    Original     		SiHD6N62E 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Contextual Info: SiHD5N50D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Optimal Design - Low Area Specific On-Resistance - Low Input Capacitance (Ciss) 550 RDS(on) max. at 25 °C () VGS = 10 V 1.5 Qg (max.) (nC) 20


    Original     		SiHD5N50D O-252) 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    Contextual Info: SiHD7N60E_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter


    Original     		SiHD7N60E AN609, 1903m 8521m 5694m 2659m 5208m 5417m 9369m 2244m PDF

    Contextual Info: SiHD6N65E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Low figure-of-merit (FOM) Ron x Qg 700 RDS(on) max. at 25 °C (Ω) VGS = 10 V Qg max. (nC) • • • • • 0.6 48 Qgs (nC) 6 Qgd (nC) 11 Configuration


    Original     		SiHD6N65E 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    SiHd7N60E

    Contextual Info: SiHD7N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • • • • • • 650 RDS(on) max. at 25 °C (Ω) VGS = 10 V 0.6 Qg max. (nC) 40 Qgs (nC) 5 Qgd (nC) 9 Configuration Single Low Figure-of-Merit (FOM) Ron x Qg


    Original     		SiHD7N60E O-252) 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    Contextual Info: SiHD3N50D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Optimal Design - Low Area Specific On-Resistance - Low Input Capacitance (Ciss) 550 RDS(on) max. () at 25 °C VGS = 10 V 3.2 Qg (max.) (nC) 20


    Original     		SiHD3N50D O-252) 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    Contextual Info: SiHD6N62E_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter


    Original     		SiHD6N62E AN609, 5255m 3372m 3280m 6452m 16-Apr-13 PDF

    TO-247 FULLPAK Package

    Abstract: SIHG73N60 SiHF22N60 SIHG22N60E solar pv SIHG24N65 sihg47n60 SiHF7N60E
    Contextual Info: V I S H AY I N T E R T E C H N O L O G Y, I N C . MOSFETs - 30 % Reduction in Specific On-Resistance I INNOVAT AND TEC O L OGY E Series N HN HIGH-VOLTAGE POWER MOSFETs O 19 62-2012 600 V and 650 V High-Performance MOSFETs E Series 600 V and 650 V, Super Junction N-Channel Power MOSFETs with a 30 % Reduction


    Original     		enerTO-247 O-247 O-220 PAK/TO-263 VMN-PT0273-1208 TO-247 FULLPAK Package SIHG73N60 SiHF22N60 SIHG22N60E solar pv SIHG24N65 sihg47n60 SiHF7N60E PDF