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    SIGNETICS MEMORIES BIPOLAR Search Results

    SIGNETICS MEMORIES BIPOLAR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    GT30J110SRA Toshiba Electronic Devices & Storage Corporation IGBT, 1100 V, 60 A, Built-in Diodes, TO-3P(N) Visit Toshiba Electronic Devices & Storage Corporation
    TB67S539FTG Toshiba Electronic Devices & Storage Corporation Stepping Motor Driver/Bipolar Type/Vout(V)=40/Iout(A)=2/Clock Interface Visit Toshiba Electronic Devices & Storage Corporation
    TB67S549FTG Toshiba Electronic Devices & Storage Corporation Stepping Motor Driver/Bipolar Type/Vout(V)=40/Iout(A)=1.5/Clock Interface Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation

    SIGNETICS MEMORIES BIPOLAR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    54S189

    Abstract: No abstract text available
    Text: Signetics 54S189 64-Bit TTL Bipolar RAM Military Bipolar Memory Products DESCRIPTION Product Specification PIN CONFIGURATION • Output options: This family of Read/Write Random Access Memories is ideal for use in scratch pad and high-speed buffer memory applica­


    OCR Scan     		PDF 54S189 64-Bit 54S189

    82S25

    Abstract: N82S25N 74S189 N82S25 N3101 N3101A N74S189 N74S89 N82S25F
    Text: Signetics M em ories - Bipolar Ram N82S25, N3101 A, N74S89 and N74S189 Series — 64 Bit Bipolar Scratch Pad Memory 16 x 4 CONNECTION DIAGRAM GENERAL DESCRIPTION This fam ily of Read/Write Random Access Memories is ideal for use in scratch pad and high-speed buffer memory


    OCR Scan     		PDF N82S25, N3101 N74S89 N74S189 82S25 N82S25N 74S189 N82S25 N3101A N82S25F

    82S230

    Abstract: 82S231 N82S230N N82S231N Signetics TTL 82S130 S82S23
    Text: Signetics Memories - Bipolar Rorn N82S230, N82S231 - 2048 Bit Bipolar Rom 512 x 4 C O N N E C T IO N D IA G R A M Both 82S230 and 82S231 devices are available in the commercial and m ilitary temperature ranges. For the commercial temperature range (0 °C to +75°C) specify


    OCR Scan     		PDF N82S230, N82S231 82S230 82S231 N82S230/231, S82S230/231. N82S230/231: S82S230/231 N82S230N N82S231N Signetics TTL 82S130 S82S23

    82S104

    Abstract: N82S105N ifr 540 82S105 N82S106N N82S107N n82s106 1x48 N82S104N
    Text: Signetics Memories - Bipolar FP LS N82S106, N82S107 Field Pro­ grammable RO M Patch 16 x 48 x 8 Cont. R E FER EN C E T A B L E TYPE NO. STOCK NO. N82S106N N82S107N 56478R 56479G O U T L IN E DRW G. NO. 5 5 IM82S104/105 Field Programmable Logic Sequencer


    OCR Scan     		PDF N82S106, N82S107 N82S106N 56478R N82S107N 56479G N82S106/107 S82S106/1 N82S104/105 82S104 N82S105N ifr 540 82S105 n82s106 1x48 N82S104N

    74S387

    Abstract: 74s288 74S474 74S188 MMI 6381 74S287 27ls09 74S209 MMI 6349 74s201
    Text: Signetics Memories BIPOLAR M EMORY CROSS R E F E R E N C E AMD' 2700/27 LSOO 2701/27LSÛ 1 27S08/27LS08 27S09/27LS09 27S10 27S11 3101 310 1 A/27S02 93415 93415A 93425 93425A F A IR C H IL D 10149 10144 1 0410 10415 93403 93406 93411 93411A 93415 93415A 93417


    OCR Scan     		PDF 82S16 2701/27LS01 82S17 27S08/27LS0Ã 82S23 27S09/27LS09 82S123 27S10 82S126 27S11 74S387 74s288 74S474 74S188 MMI 6381 74S287 27ls09 74S209 MMI 6349 74s201

    N82S185f

    Abstract: 82S185 SIGNETICS 82S185 82S184 N82S184F N82S185
    Text: Signetics Memories - Bipolar Proms N82S184,N82S185 - 8192 Bit Field C0NNECTI0N DIAGRAM Programmable Bipolar Prom G E N E R A L D E S C R IP T IO N T he 8 2 S 1 8 4 and 8 2 S 1 8 5 are field programmable, w hich means that custom patterns are im mediately available by


    OCR Scan     		PDF N82S184 N82S185 82S184 82S185 N82S185f 82S185 SIGNETICS N82S184F

    N74S301

    Abstract: Signetics decoder ITT gemini
    Text: Signetics Memories - Bipolar Ram N74S200/201, N74S301 - 256 Bit TTL Ram Cont. B LO C K D IA G R A M WRITE AMPLIFIER* D ATA INRUT B U FFE R 13 E 3 -r» » ( 2) £* t<¡3 isfi AD­ DRESS B U FFE R 1:1« (X) DECO DER <u> 1 1 16 X 16 M ATR IX 1 1 (12) W I 16


    OCR Scan     		PDF N74S200/201, N74S301 Signetics decoder ITT gemini

    N82S141F

    Abstract: 82s141 82S140 N82S140 N82S140F N82S141 S82S140 S82S141 SIGNETICS prom ttl 512 82S141/8708+prom
    Text: Signetics Memories - Bipolar Proms N82S140, N82S141 - 4 0 9 6 Bit Field Programmable Prom 512 x 8 C O N N E C T IO N D IA G R A M 13 G E N E R A L D E SC R IPTIO N The 82S 140 and 82S141 are fie ld program m able. The standard 82S140 and 82S141 are supplied w ith all outputs


    OCR Scan     		PDF N82S140, N82S141 82S140 82S141 N82S140/ N82S141F N82S140 N82S140F S82S140 S82S141 SIGNETICS prom ttl 512 82S141/8708+prom

    il02

    Abstract: 32X32 82S27 N82S27 N82S27F signetics memories bipolar
    Text: Signetics Memories Bipolar Proms N82S27 - 1024 Bit Field Programmable Bipolar Prom C O N N E C T IO N D IA G R A M G E N E R A L D E S C R IP T IO N T he 8 2 S 2 7 is field program m able, w hich means that custom patterns are im m ediately available by follow ing the


    OCR Scan     		PDF N82S27 82S27 N82S27, il02 32X32 N82S27F signetics memories bipolar

    N82S241N

    Abstract: bipolar ROM N82S240N
    Text: Signetics Memories - Bipolar Rom N82S240/N82S241 - 4096 Bit Bipolar Rom 512 x 8 C O N N E C TIO N D IA G R A M 1 3 v cc G E N E R A L DE SC R IPTIO N T he 82S240 and 82S241 are mask program m able, and include on-chip decoding and 4 c h ip enable inputs fo r ease


    OCR Scan     		PDF N82S240/N82S241 82S240 82S241 N82S240/241, S82S240/241, N82S240/241 S82S240/241: 17nW/bittyp N82S241N bipolar ROM N82S240N

    signetics 82S1

    Abstract: 82S214
    Text: Signetics Memories - Bipolar Rom N82S14 — 2048 Bit Bipolar Rom C O N N E C T IO N D IA G R A M G E N E R A L D E SC R IPTIO N The 82S14 includes on-chip decoding and 2 c h ip enable in ­ puts fo r ease o f m em o ry expansion. T h e y feature tri-state


    OCR Scan     		PDF N82S14 82S14 signetics 82S1 82S214

    Untitled

    Abstract: No abstract text available
    Text: Signetics Memories - Bipolar Ram C O N N E C TIO N D IA G R A M N82S208 - 2048 Bit Bipolar Ram 256 x 8 G E N E R A L DE SC R IPTIO N The 82S208 data inputs and o u tp u ts are com m o n (com m on I/O ) w ith separate o u tp u t disable (OD) line th a t allow s ease


    OCR Scan     		PDF N82S208 82S208

    S8251

    Abstract: 82S11 56267R signetics 82S1 82S10 82S111 N82S10 A4T10 N82S11F
    Text: Signetics Memories - Bipolar Ram N82S10, N82S110, 82S11, 82S111 — 1024 Bit Bipolar Ram C O N N E C TIO N D IA G R A M G E N E R A L D E SC R IPTIO N The 8 2 S 1 0 /1 1, w ith a typ ic a l access tim e o f 30ns, is ideal fo r cache b u ffe r app lica tions and fo r systems requiring very


    OCR Scan     		PDF N82S10, N82S110, 82S11, 82S111 82S10/11, 82S10/11 N82S10/110/11/111. 82S10 82S11 S8251 56267R signetics 82S1 N82S10 A4T10 N82S11F

    N82S115N

    Abstract: N82S115F 82S11 82S115 82S215 N82S115 S82S115
    Text: Signetics Memories - Bipolar Proms N82S115 -4 0 9 6 Bit Field Programmable Bipolar From C O N N E C T IO N D IA G R A M 8 2 S 1 15 devices are available in the com m ercial and m ilitary temperature ranges. F o r the com m ercial temperature range 0°C to + 7 5 ° C specify N 8 2 S 1 15, F or N , and for the


    OCR Scan     		PDF N82S115 82S115 N82S115N N82S115F 82S11 82S215 S82S115

    82S16

    Abstract: N82S16N N82S116N 82S17 "pin compatible" N82S16 82S17 N82S17 82S116 S82S16 N82S117F
    Text: Signetics Memories - Bipolar Ram N82S16, N82S116, N82S17, N82S117 - 2 5 6 Bit Ram 256 x 1 C O N N E C T IO N D IA G R A M G E N E R A L D E S C R IP T IO N T he 8 2 S 1 6 / 1 16 and 8 2 S 1 7 / 1 17 are read/write m e m ory arrays w hich feature either open collector or -tri-state o utput optio ns


    OCR Scan     		PDF N82S16, N82S116, N82S17, N82S117 82S16/116 82S17/117 25jiA 100juA 82S16 N82S16N N82S116N 82S17 "pin compatible" N82S16 82S17 N82S17 82S116 S82S16 N82S117F

    N82S201N

    Abstract: N82S200N 82S201
    Text: Signetics Memories - Bipolar PLA N82S200/N82S201 Eiipolar Mask Programmable Logic C O N N E C T IO N D IA G R A M G E N E R A L D E S C R IP T IO N T h e 8 2 S 2 0 0 tri-s ta te o u tp u ts and th e 8 2S 2 01 (o p e n c o lle c to r o u tp u ts ) are B ip o la r P ro g ra m m a b le L o g ic A rra y s ,


    OCR Scan     		PDF N82S200/N82S201 82S200 82S201 16-input 82S200 82S201 N82S201N N82S200N

    N82S105N

    Abstract: 82S104 82S107 82S106 N82S106N N82S107N 82S105 N82S104N
    Text: S ig n e tic s Memories - Bipolar Proms N82S106, N82S107 Field Pro­ grammable ROM Patch 1 6 x 4 8 x 8 C O N N E C T IO N D IA G R A M .'I T G E N E R A L D E SC R IPTIO N T he 82S106 (Open c o lle c to r outputs) and 82S107 (3-state o utputs) are b ip o la r Program mable ROM Patches organized


    OCR Scan     		PDF N82S106, N82S107 16x48x8) 82S106 82S107 82S106) N82S105N 82S104 82S107 82S106 N82S106N N82S107N 82S105 N82S104N

    82S112

    Abstract: 82S12 N82S112 signetics memories bipolar
    Text: S ig n e tic s Memories - Bipolar S A M N82S12, N82S112 - 32 Bit Bipolar Multi- port Memory 8 x 4 G E N E R A L D E S C R IP TIO N Data is stored in a single storage m a trix w hich is add­ ressed via 2 independent sets o f address in puts, designated respectively as P ort A and P o rt B.


    OCR Scan     		PDF N82S12, N82S112 82S112 82S12 signetics memories bipolar

    N10149F

    Abstract: N10149 ecl 10K signetics 10149
    Text: S ig n e tic s Memories - Bipolar Proms N10149—1024 Bit Field Programmable Prom. CONNECTION DIAGRAM vcci r 1 GENERAL DESCRIPTION The 10149 is field programmable, meaning thcit custom patterns are immediately available by follow ing the fusing procedure given in this data sheet. The standard device is


    OCR Scan     		PDF N10149-1024 500ii 50kii N10149F N10149 ecl 10K signetics 10149

    82S2708

    Abstract: N82S2708F N82S2708 S82S2708
    Text: S ig n e tic s Memories - Bipolar Proms- N82S2708 - 8192 Bit Field Programmable Bipolar Prom CONNECTION DIAGRAM GENERAL DESCRIPTION The 82S2708 is field programmable, which means that custom patterns are immediately available by follow ing the fusing procedure given in this data sheet. The standard


    OCR Scan     		PDF N82S2708 82S2708 N82S2708F S82S2708

    N82S147N

    Abstract: SIGNETICS prom N82S147 512 PROM 82s
    Text: S ign etics Memories - Bipolar Prom 512 x 8 C O N N E C T IO N D IA G R A M N82S146, N82S147 - 4096 Bit Bipolar Prom (512 x 8) G E N E R A L D E S C R IP TIO N T he 82S 146 and 82S147 are fie ld program m able. The standard devices are supplied w ith all o u tp u ts at logical


    OCR Scan     		PDF N82S146, N82S147 82s146 82s147 n82s146/147. N82S147N SIGNETICS prom 512 PROM 82s

    ecl 10K signetics

    Abstract: N10139N SIGNETICS prom ECL prom SIGNETICS 268
    Text: S ig n e tic s Memories - Bipolar Proms N10139 256 Bit ECL Prom 32 x 8 C O N N E C T IO N D IA G R A M G E N E R A L D E S C R IP T IO N The 10139 is organized as an array of 32 words arid 8 bits. The initial unprogrammed state is 0 (low). The user may program 1 's to obtain any desired pattern. Outputs go to


    OCR Scan     		PDF N10139 580mW ecl 10K signetics N10139N SIGNETICS prom ECL prom SIGNETICS 268

    N93415AF

    Abstract: n93425 N93415AN N93425AF N93425AN
    Text: S ig n e tic s Memories - Bipolar Ram N93415A, N93425A - 1024 Bit Bipolar Ram 1024 x 1 C O N N E C T IO N D IA G R A M G E N E R A L DE SC R IPTIO N The 9 3 4 15A and 9 3 4 2 5 A , w ith a ty p ic a l access tim e o f 30ns, are ideal fo r cache b u ffe r applications and for


    OCR Scan     		PDF N93415A, N93425A 3415A 3425A, 3425A N93415AF n93425 N93415AN N93425AF N93425AN

    N82S21F

    Abstract: 82S21 N82S21N
    Text: S ig n e tic s Memories - Bipolar Ram N82S21 64 Bit Write-while-Read Ram 32 x 2 CONNECTION 0 1AG RAM GENERAL DESCRIPTION The 82S21 is ideally suited for high speed buffers and as the memory element in high speed accumulators. WE [ 7 ~16l VCC Words are selected through a 5-input decoder when the chip


    OCR Scan     		PDF N82S21 82S21 82S21( N82S21F N82S21N