ecg semiconductors master replacement guide
Abstract: ecg master replacement guide mkl b32110 siemens mkp B32650 c945 p 331 ks transistor IC,MASTER master replacement guide Kennlinie KTY 10-6 siemens b32110 A2005 transistor
Text: Liebe Schuricht-Kunden, Ihre Zufriedenheit ist unser größtes Anliegen. Aus diesem Grunde versuchen wir, Ihnen Informationen und Ware stets zum richtigen Zeitpunkt verfügbar zu machen. Das gilt insbesondere auch für die Produkte der Siemens AG mit den drei
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isl 6251 schematic
Abstract: smd transistor A4S Siemens OFW 361 smd marking b4h 6Bs smd transistor NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG Transistors Diodes smd A7H a4s smd transistor npn transistor ss100 smd transistor 6Bs
Text: SIEMENS Halbleiter-Datenblätter Im Produktbereich „Halbleiter“ konnten uns leider von SIEMENS nicht alle Daten rechtzeitig zur Verfügung gestellt werden. Wir werden uns bemühen, die Auswahl an Datenblättern dieses Bereichs für die nächste Ausgabe dieser CD zu vervollständigen.
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Q62702-A772
Q62702-A731
Q62702-A773
OT-23
isl 6251 schematic
smd transistor A4S
Siemens OFW 361
smd marking b4h
6Bs smd transistor
NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG
Transistors Diodes smd A7H
a4s smd transistor
npn transistor ss100
smd transistor 6Bs
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PEF 24628
Abstract: PSB 21493 siemens PMB 6610 47n60c3 psb 21553 Pmb7725 PEF 22628 PMB6610 psb 50505 PMB 6819
Text: 2006/2007 Published by Infineon Technologies AG Ordering No. B192-H6780-G10-X-7600 Printed in Germany PS 080648. nb Infineon Product Catalog for Distribution 2006/2007 Product Catalog for Distribution www.infineon.com/distribution Edition July 2006 Published by
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B192-H6780-G10-X-7600
SP000012954
SP000013610
SP000017969
SP000014627
SP000018085
SP000018086
PEF 24628
PSB 21493
siemens PMB 6610
47n60c3
psb 21553
Pmb7725
PEF 22628
PMB6610
psb 50505
PMB 6819
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220v AC voltage stabilizer schematic diagram
Abstract: LG color tv Circuit Diagram tda 9370 1000w inverter PURE SINE WAVE schematic diagram schematic diagram atx Power supply 500w TV SHARP IC TDA 9381 PS circuit diagram wireless spy camera 9744 mini mainboard v1.2 sony 279-87 transistor E 13005-2 superpro lx
Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 AD9272 Analog Front End, iMEMS Accelerometers & Gyroscopes . . . . . . 782, 2583 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-528 Acceleration and Pressure Sensors . . . . . . . . . . . . . . . . . . . . . . . . . . Page 2585
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AD9272
P462-ND
LNG295LFCP2U
P463-ND
LNG395MFTP5U
220v AC voltage stabilizer schematic diagram
LG color tv Circuit Diagram tda 9370
1000w inverter PURE SINE WAVE schematic diagram
schematic diagram atx Power supply 500w
TV SHARP IC TDA 9381 PS
circuit diagram wireless spy camera
9744 mini mainboard v1.2
sony 279-87
transistor E 13005-2
superpro lx
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Untitled
Abstract: No abstract text available
Text: SIEMENS GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter SFH 409 Area not flat Chip position -Cathode SFH 409 Anode (SFH 487, SFH 4391) O in C\J (O o X 0) G EX06250 M aße in mm, wenn nicht anders angegeben/D im ensions in mm, unless otherwise specified. Wesentliche Merkmale
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EX06250
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gaa 808
Abstract: No abstract text available
Text: SIEMENS SFH 48 5721 SFH 48 5400 SFH 48 5600 LASER BARS, UNMOUNTED FEATURES • Monolithic Linear Array, Unmounted • High Efficiency Quantum Well Structure • Highly Reliable Strained Layer Material: InGaAIAs/GaA* for X 808 nm InGaAa/GaAa for X=940 nm • Wavelength Range: 780 nm to 960 nm
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SFH485721
SFH48540O
SFH485600
gaa 808
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sfh450
Abstract: No abstract text available
Text: SIEMENS Plastic Fiber O ptic T ransm itte r Diode Plastic C onnector Housing SFH 450 SFH 450V Features • • • • 2.2 mm aperture holds standard 1000 micron plastic fiber No fiber stripping required Good linearity Molded microlens for efficient coupling
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62702-P
Q62702-P265
OH000364
OHROQ535
Gpx06525
sfh450
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tg 7f
Abstract: No abstract text available
Text: SIEMENS GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter LD 242 2.7 00.45 Chip position co •>-; S i n 8_ Gl q -g ; O cvj « 14.5 12.5 3.6 ^3.0 Anode LD 242, BPX 63, SFH 464 Cathode (SFH 483) Approx. weight 0.5 g 8 Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified.
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Untitled
Abstract: No abstract text available
Text: SIEMENS GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter 2.7 00.45 LD 242 Chip position CO i - ; Q O 3.6 " 3.0 Anode LD 242, BPX 63, SFH 464 Cathode (SFH 483) Approx. weight 0.5 g IO C\J (O (O o 0) Maße in mm, wenn nicht anders angegeben/D im ensions in mm, unless otherwise specified.
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SFH4057
Abstract: No abstract text available
Text: SFH 405 SIEMENS INFRARED EMITTER FEATURES Maximum Ratings * GaAs Infrared Emitting Diode, Fabricated in a Liquid Phase Epitaxy Process * Long Lifetime Operating and Storage Temperature Range Tqp, Tstq .-40° to +80°C Junction Temperature ( T j) .80°C
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EM 4093
Abstract: No abstract text available
Text: bOE D ÔS35büS ÜQ4titi07 3 m ISIEG T^/-// SFH 409 SIEMENS INFRARED EMITTER SIEMENS AKTIENÛESELLSCHAF Package Dimensions in Inches mm Surface not flat - 204 (5 2) 177 (4 5) 024 (.6) .0 1 6 ( 4 ) 100 (2 54) .0 2 8 (7 ) 0 1 6 (4 ) f L a 1 2 2 (3 1) h w 114 (2 9 )
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Q4titi07
EM 4093
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Untitled
Abstract: No abstract text available
Text: SIEMENS GaAs-IR-Lumineszenzdioden GaAs Infrared Emitters SFH415 SFH 416 Cathode Approx. weight 0.2 g Area not flat Collector Transistor < o Approx. weight 0.4 g Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified. W esentliche Merkmale
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SFH415
SFH416
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Untitled
Abstract: No abstract text available
Text: SIEMENS GaAs-IR-Lumineszenzdioden GaAs Infrared Emitters SFH415 SFH 416 Area not flat o Cathode Diode Collector (Transistor) CO (O (O o X 0) GEX06630 Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified. W esentliche Merkmale
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SFH415
GEX06630
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B35b
Abstract: No abstract text available
Text: SIEMENS CMPNTSi OPTO MME D Bi Û23b35b 000312^ 3 H S I E X SIEM ENS SFH 435 GaAs INFRARED EMITTER DOUBLE EMITTING DIODE T-41-11 Package Dimensions in Inches mm .024 (0.6) •Qf6j0.4) .252(6.4) .228 (5.8) I , .O K (2.15) ^ .0 6 5 ( 1 65) , .209 (7.35) .278 (7.05)“*^
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23b35b
T-41-11
---SFH435
fi23b32b
Q0QS131
T--41
SFH43S
B35b
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Untitled
Abstract: No abstract text available
Text: SFH 409 SIEMENS INFRARED EMITTER Package Dimensions in Inches mm 204 (5 2) 024 ( 6) 0 1 6 (4 ) 1S7 (4 0) 141 (3 6) 028 ( 7) 0 1 6 (4 ) *122(3 1) 100 (2 54) 114(2 9) 024(6)11 071 (1 6) 047(1 2) 0 1 6 (4 )^ ^ ^ 1 140(29) 1.061 (27) FEATURES M a x im u m R atings
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SFH409
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L0832
Abstract: RUR1060
Text: SIEMENS SFH 405 INFRARED EMITTER P a c k a g e D im e n s io n s in In ch e s m m .112 J (2 .8 4 ) (2.24) .088 .045 (1.15) .035 (0.9) Parting line. _ Flash not included in tolerance .137 (3.5) .118(3.0) 142 (3.6) .126 (3 2) - i 106(2 7) 0 9 8 (2 5) 020 (0.5)
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siemens SFH 960
Abstract: No abstract text available
Text: SIEM ENS GaAIAs-IR-Lumineszenzdiode 880 nm GaAIAs Infrared Emitter (880 nm) SFH 486 A rea not flat 5.9 5.5 JX6 •w i S I 0.4 Anode GEX06626 Approx. weight 0.5 g Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified. W esentliche Merkmale
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Untitled
Abstract: No abstract text available
Text: Laserdioden fur hohe Leistungen High-Power Laser Diodes Bezeichnungsschema Type designations SFH X 48 Indicates power Laser X X X I 1-'no.: Package 2"no.: Chip 3,:’ no.: wavelength 0 Chip on carrier 1 TO 18 2 1 2 60 xm stripes 0 800-820 YAG 1 <800 2 > 8 2 0 -8 6 0
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200/xs.
200/xm
Q62702-P2115
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1PMT
Abstract: No abstract text available
Text: Bauelemente für die LWL-Technik und Leistungslaser Semiconductor Devices for FiberOptic Systems and High-Power Lasers Bezeichnungsschema SFH Type designation X 48 Indicates power Laser X X X 1sl no.: Package 2na no.: Chip 3"1 no.: wavelength 0 Chip on carrier
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Q62702-P2115
1PMT
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TP20
Abstract: FH-41
Text: SFH415 SFH416 SIEMENS GaAs INFRARED EMITTER FEA TU R ES • Half Angle S F H 41 5: ±17° S FH 416: +28° • T 13/« Package • Highly Efficient GaAs LEDs • Good Linearity lE=f (lF at High Currents • Radiation in the Near Infrared Range • High Reliability
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SFH415
SFH416
SFH415/416
416-R
41S-S
415-T
415-U
100mA
SFH415/416
TP20
FH-41
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Untitled
Abstract: No abstract text available
Text: SIEMENS GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter LD 274 Maße in mm, wenn nicht anders angegeben/D im ensions in mm, unless otherwise specified. Wesentliche Merkmale Features • Sehr enger Abstrahlwinkel • GaAs-IR-LED, hergestellt im Schmelzepitaxieverfahren
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OHR01041
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7400
Abstract: No abstract text available
Text: Literaturhinweise Information on Literature Auszug aus unserem Literaturverzeichnis 12.93 Exerpt from our Literature Guide 12.93 Bestell-Nr.: B192-H6763-X-X-7400 Ordering No.: B192-H6763-X-X-7400 Titel Title Bestell-Nr. Ordering Code Art Ausgabe Class. Edition
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B192-H6763-X-X-7400
B192-H6636-X-X-7400
B191-H6554
B191-H6554-X-X-7600
A19100-L531-F303-1
7400
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AL970
Abstract: No abstract text available
Text: SIEMENS CMPNTS-, OPTO 44E D • SIEM EN S 023b32b 0005110 4 M S I E X LD 271/271H 1" LEADS LD 271L/271 LH INFRARED EMITTER Package Dimensions in Inches mm .024(0.6) .189(4.9) .165(42) ¿*(1.0) I a .to .0» •071 (U> ^ .047 ( U ) ^ _± .028 (0.7)' (1.0)
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023b32b
271/271H
271L/271
307t7
M-30-
30-20HO
AL970
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JRC 45600
Abstract: YD 803 SGS 45600 JRC TDA 7277 TDA 5072 krp power source sps 6360 2904 JRC Sony SHA T90 SA philips HFE 4541
Text: I SEMICON INDEXES Contents and Introduction Manufacturers' Information V O LU M E 3 INTERNATIONAL INTEGRATED CIRCUITS INDEX 15th EDITION 1997 Numerical Listing of Integrated Circuits Substitution Guide U D C 621.382.3 Diagram s THE S E M IC O N INTERNATIONAL INDEXES
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ZOP033
ZOP035
ZOP036
ZOP037
ZOP038
ZOP039
ZOP045
ZOP042
ZOP041
ZOP043
JRC 45600
YD 803 SGS
45600 JRC
TDA 7277
TDA 5072
krp power source sps 6360
2904 JRC
Sony
SHA T90 SA
philips HFE 4541
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