4AP21
Abstract: a/3RV10
Text: Siemens AG 2009 Three-Phase Transformers 4AP, 4AU Autotransformers For matching purposes according to EN 61558-2-13 • Overview • Shared input and output windings without electrical isolation • Enable the voltage matching of electrical loads • Designed for uninterrupted duty 100 % ON period
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T50/B)
T55/H)
2-8HA20-2XA0
4AU30
4AU36
4AU39
4AP21
a/3RV10
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Untitled
Abstract: No abstract text available
Text: TP0606 P-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► This low threshold, enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This
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TP0606
TP0606
DSFP-TP0606
A113007
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Untitled
Abstract: No abstract text available
Text: TN0110 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► This low threshold, enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This
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TN0110
TN0110
DSFP-TN0110
A102907
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P-Channel FET 100v to92
Abstract: No abstract text available
Text: TP2635 P-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► This low threshold enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This
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TP2635
263pF
TP2635
DSFP-TP2635
A102607
P-Channel FET 100v to92
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TN0606
Abstract: marking TN
Text: TN0606 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► This low threshold, enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This
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TN0606
100pF
TN0606
DSFP-TN0606
A020508
marking TN
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Untitled
Abstract: No abstract text available
Text: TN0610 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► This low threshold, enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This
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TN0610
100pF
TN0610
DSFP-TN0610
A020508
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VN2224
Abstract: No abstract text available
Text: VN2224 N-Channel Enhancement-Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► The Supertex VN2224 is an enhancement-mode normallyoff transistor that utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing
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VN2224
VN2224
DSPD-3TO92N3,
D061608.
DSFP-VN2224
A070108
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Untitled
Abstract: No abstract text available
Text: VN2224 N-Channel Enhancement-Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► The Supertex VN2224 is an enhancement-mode normallyoff transistor that utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing
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VN2224
VN2224
DSPD-3TO92N3,
D061608.
DSFP-VN2224
A061608
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Untitled
Abstract: No abstract text available
Text: TN0620 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► This low threshold, enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This
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TN0620
110pF
-55OC
TN0620
DSFP-TN0620
A102907
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Untitled
Abstract: No abstract text available
Text: VN2224 N-Channel Enhancement-Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► The Supertex VN2224 is an enhancement-mode normallyoff transistor that utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing
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VN2224
VN2224
DSFP-VN2224
A120307
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1W SOT-23
Abstract: TN2106K1-G
Text: TN2106 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► This low threshold, enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This
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TN2106
O-236,
TN2106
DSFP-TN2106
A020508
1W SOT-23
TN2106K1-G
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DN2535
Abstract: DN2535N3-G DN2535N5 DN2535N5-G 125OC H1 SOT-89
Text: DN2535 N-Channel Depletion-Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► The Supertex DN2535 is a low threshold depletion mode normally-on transistor utilizing an advanced vertical DMOS structure and Supertex’s well-proven silicon-gate
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DN2535
DN2535
O-220,
DSFP-DN2535
A100907
DN2535N3-G
DN2535N5
DN2535N5-G
125OC
H1 SOT-89
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TRANSISTOR MARKING CODE TP
Abstract: No abstract text available
Text: TP2104 P-Channel Enhancement Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► ► This low threshold enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This
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TP2104
fr12mm
O-236,
TP2104
DSFP-TP2104
A112807
TRANSISTOR MARKING CODE TP
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siemens to92 n3 s
Abstract: No abstract text available
Text: TN0610 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► This low threshold, enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This
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TN0610
100pF
TN0610
DSPD-3TO92N3,
D070808.
DSFP-TN0610
NR071508
siemens to92 n3 s
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marking DN
Abstract: DN2535
Text: DN2535 N-Channel Depletion-Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► The Supertex DN2535 is a low threshold depletion mode normally-on transistor utilizing an advanced vertical DMOS structure and Supertex’s well-proven silicon-gate
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DN2535
O-220,
DSFP-DN2535
A100907
marking DN
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Untitled
Abstract: No abstract text available
Text: TN0606 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► This low threshold, enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This
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TN0606
100pF
TN0606
DSPD-3TO92N3,
D070808.
DSFP-TN0606
NR071508
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marking n3
Abstract: TN0604N3 75E1 MS-013 TN0604 TN0604N3-G TN0604WG-G n-channel fet to-92
Text: TN0604 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► This low threshold, enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This
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TN0604
140pF
MS-013,
DSFP-TN0604
A102507
marking n3
TN0604N3
75E1
MS-013
TN0604
TN0604N3-G
TN0604WG-G
n-channel fet to-92
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SiTN
Abstract: TN0106 TN0106N3-G TN1506NW VF15
Text: Supertex inc. TN0106 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ►► ►► ►► ►► ►► ►► ►► This low threshold, enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven,
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TN0106
DSFP-TN0106
B030411
SiTN
TN0106
TN0106N3-G
TN1506NW
VF15
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Untitled
Abstract: No abstract text available
Text: TN0104 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► This low threshold, enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This
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TN0104
TN0104
O-243AA
OT-89)
O-243,
DSFP-TN0104
A122707
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sitn
Abstract: TN0702N3-G
Text: Supertex inc. TN0702 N-Channel Enhancement-Mode Vertical DMOS FET Features ►► ►► ►► ►► ►► ►► ►► ►► General Description Low threshold 1.0V max. On-resistance guaranteed at VGS = 2, 3, and 5V High input impedance Low input capacitance (130pF typical)
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TN0702
130pF
DSFP-TN0702
B031411
sitn
TN0702N3-G
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marking TN
Abstract: No abstract text available
Text: TN0620 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► This low threshold, enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This
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TN0620
110pF
DSFP-TN0620
A0912008
marking TN
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Untitled
Abstract: No abstract text available
Text: DN2530 N-Channel Depletion-Mode Vertical DMOS FETs Features General Description The DN2530 is a low threshold depletion-mode normally-on transistor utilizing an advanced vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process.
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DN2530
DN2530
DSFP-DN2530
A103108
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Untitled
Abstract: No abstract text available
Text: Supertex inc. TN0702 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description Low threshold 1.0V max. On-resistance guaranteed at VGS = 2, 3, and 5V High input impedance Low input capacitance (130pF typical) Fast switching speeds Low on-resistance
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TN0702
130pF
DSFP-TN0702
B031411
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TN0106
Abstract: TN0106N3-G
Text: TN0106 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► This low threshold, enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This
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TN0106
DSFP-TN0106
A091208
TN0106
TN0106N3-G
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