Eupec Power Semiconductors 600v bsm
Abstract: BSM300GB60DN2 eupec igbt BSM 100 gb Eupec BSM siemens igbt 200 A WELDING INVERTER DESIGN BY IGBT
Text: A New Generation of 600V IGBT-Modules Dipl.-Ing. Jürgen Göttert, eupec GmbH & Co KG, Warstein Dipl.-Ing. Andreas Karl, eupec GmbH & Co KG, Warstein Dipl.-Ing. Thomas Laska, SIEMENS, München Dr. Ing. Anton Mauder, SIEMENS, München Dipl.-Ing. Wolfgang Scholz, SIEMENS, München
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Untitled
Abstract: No abstract text available
Text: Zuverlässigkeit von Al-Dickdraht-Bondverbindungen in IGBTModulen Dr. Franz Auerbach, Siemens AG / HL, München Christian Lammers, Ruhr-Universität Bochum Dr. Andreas Lenniger, eupec GmbH, Warstein-Belecke Dr. Herbert Schwarzbauer, Siemens AG / ZFE, München
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D-59581
ISHM96
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6.5kV IGBT
Abstract: IGBT Power Module siemens ag infineon igbt reliability siemens IGBT 600a eupec igbt 6500v igbt 6.5kv SiC IGBT High Power Modules, PCIM Hongkong Measurement of stray inductance for IGBT IGBT module FZ siemens igbt inverters
Text: 6.5kV IGBT-Modules Franz Auerbach Infineon Technologies Josef Georg Bauer (Siemens AG) Manfred Glantschnig (Infineon Technologies) Jürgen Göttert (eupec GmbH & Co KG) Martin Hierholzer (eupec GmbH & Co KG) Alfred Porst (Infineon Technologies) Daniel Reznik (Siemens AG)
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Automated Guided Vehicles
Abstract: thermistor NTC epcos siemens matsua saw filter saw Siemens matsua
Text: Martin Müller Standard components from Siemens Matsushita: Variety off the shelf Standard components are still the mainstay of electronic circuitry. Siemens Matsushita Components produces them by the billion – capacitors, ferrites, inductors, transformers,
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SIEMENS STACKED FILM CAPACITOR
Abstract: filter saw Siemens matsua
Text: Martin Müller Standard components from Siemens Matsushita: Variety off the shelf Standard components are still the mainstay of electronic circuitry. Siemens Matsushita Components produces them by the billion – capacitors, ferrites, inductors, transformers,
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Varistoren lebensdauer
Abstract: nf schaltungen siemens datenbuch
Text: Martin Müller Standardbauelemente von Siemens Matsushita Components: Vielfalt von der Stange Standard-Bauelemente bilden nach wie vor das Rückgrat in elektronischen Schaltungen. Bei Siemens Matsushita Components, kurz S+M, sind es vor allem Kondensatoren, Ferrite,
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Schalenkerne
Abstract: Kondensatoren 0603 0402 Varistoren Keramikkondensator nf schaltungen siemens datenbuch Varistoren lebensdauer MKK-DC
Text: Martin Müller Standardbauelemente von Siemens Matsushita Components: Vielfalt von der Stange Standard-Bauelemente bilden nach wie vor das Rückgrat in elektronischen Schaltungen. Bei Siemens Matsushita Components, kurz S+M, sind es vor allem Kondensatoren, Ferrite,
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2kW flyback PFC
Abstract: transistor SMD DK -RN SMPS flyback 2kW UPS SIEMENS UMAX 450W SMPS smps 450W 2kw mosfet PFC 5kw P-CHANNEL 25A TO-247 POWER MOSFET siemens soft starter
Text: Semiconductor Group – find us at an office near you AUS Siemens Ltd., Head Office 544 Church Street Richmond Melbourne , Vic. 3121 ట (+61) 3-9420 7111 Fax (+61) 3-9420 72 75 Email: mark.walsh@siemens.com.au D Siemens AG Von-der-Tann-Straße 30 D-90439 Nürnberg
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D-90439
D-70499
D-81679
B-1060
N60S5
O-220
OT-223
2kW flyback PFC
transistor SMD DK -RN
SMPS flyback 2kW
UPS SIEMENS
UMAX 450W SMPS
smps 450W
2kw mosfet
PFC 5kw
P-CHANNEL 25A TO-247 POWER MOSFET
siemens soft starter
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TO-220AB Option E3045 Package
Abstract: TO-220AB Option E3044 Package
Text: Gehäusemaßbilder Package Outlines SIEMENS Gehäusemaßbilder Package Outlines Maße in mm, wenn nicht anders angegeben (Dimensions in mm, unless otherwise specified) Bild 9 Semiconductor Group Figure 9 135 GehäusemaBbllder Package Outlines SIEMENS - 15 -14.8-
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O-218
O-220
E3045
E3044
TO-220AB Option E3045 Package
TO-220AB Option E3044 Package
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siemens igbt BSM 200 GA 120
Abstract: 1C00 siemens bsm 284 f siemens R9
Text: bGE » • flEBSbOS 0045^20 b3^ * S I E 6 SIEMENS SIEMENS AKTIEN6ESELLSCHAF BSM 300 GA 100 D IGBT Module Preliminary Data VCE = 1000 V / c = 400 A at Tc = 25 C / c = 300 A at Tc = 80 C • • • • • Power module Single switch Including fast free-wheel diodes
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0D45R20
C67076-A2000-A2
siemens igbt BSM 200 GA 120
1C00
siemens bsm 284 f
siemens R9
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siemens igbt BSM 300
Abstract: siemens igbt BSM 200 GA 120 NC4000
Text: ta□ E D • SIEMENS ÖEBSbOS GDMSTEfl T2T ISIE6 SIEMENS AKTIENGESELLSCHAF -r -3 9 -^ 5 BSM 300 GA 120 D IGBT Module Preliminary Data VCE = 1200 V = 400 A at Tc = 25 C = 300 A at 80 'C Ic Ic Tc = • Power module • Single switch • Including fast free-wheel diodes
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C67076-A2007-A2
siemens igbt BSM 300
siemens igbt BSM 200 GA 120
NC4000
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Untitled
Abstract: No abstract text available
Text: SIEMENS Inhalt Typenübersicht SIPMOS-Leistungstransistoren. 9 FRED-Dioden. 14 Alphanumerische Typenliste Typ, Bestellnummer, Seite.15
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IGBT Power Module siemens ag
Abstract: siemens igbt
Text: Qualität und Zuverlässigkeit Quality and Reliability SIEMENS 1 Qualität 1 Quality Der Bereich Halbleiter HL der Siemens AG plant, entwickelt, fertigt und vertreibt ein breites Spektrum von Halbleiter-Bauelementen und optoelektronischen Komponenten und erbringt die dazu erforderlichen Dienst
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Untitled
Abstract: No abstract text available
Text: bOE D • flSBStiOS 004577b Û1G SIEMENS ISIEG SIEMENS AKTIENGESELLSCHAF BSM 05 GD 100 D IGBT Module Preliminary Data y CE = 1000 v I c = 6 x 5.5 A at J c = 25 C / c = 6 x 5.0 A at Tc = 40 C • Power module • 3-phase full bridge • Including fast free-wheel diodes
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004577b
C67076-A2506-A52
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siemens ha 8000
Abstract: BSM 214 A siemens igbt BSM 50 gb 100 d 235L C160 siemens igbt BSM 50 gb 120 d
Text: bGE D • ôS3SbDS 0QM5ÔMÛ Ö37 ■ S I E G SIEMENS SIEMENS AKTIENGESELLSCHAF T ’ Z d r C IGBT Module Preliminary Data ft BSM50GB120D BSM50GAL120D = V CE 1200 V / c = 2 x 70 A at T c = 25 C / c = 2 x 50 A at 80 C Tc = • • • • • Power module H alf-bridge/Chopper
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C67076-A2105-A2
C67076-A2010-A2
siemens ha 8000
BSM 214 A
siemens igbt BSM 50 gb 100 d
235L
C160
siemens igbt BSM 50 gb 120 d
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BSM15GD120D
Abstract: 14V-12 vm305171 C160 QD45
Text: bOE D • ä23SbOS 0Q45Û00 'ibT « S I E G SIEMENS SIEMENS AKTIEN6ESELLSCHAF ~ r ^ ¿ 2 3 ' ~ 0 ’7 IGBT Module Preliminary Data BSM15GD120D VCE = 1200 V / c = 6 x 25 A at T c = 25 C / c = 6 x 15 A at r c = 80"C • Power module • 3-phase full bridge • Including fast free-wheel diodes
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235b05
BSM15GD120D
vm305171
BSM15GD120D
C67076-A2504-A2
14V-12
vm305171
C160
QD45
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siemens igbt BSM 75 gb 100
Abstract: siemens igbt BSM 150 Gb 160 d AL100-D Q102 C67076-A2104-A2 siemens igbt BSM 150 gb 100 d BSM 75 GB 120 D siemens igbt BSM 100 gb BSM 225 IGBT Power Module sieg
Text: LOE D • ä235bDS 0045flSb ^03 « S I E G SIEMENS SIEMENS AKTIENGESELLSCHAF ? BSM 75 GB 100 D BSM 75 GAL 100 D IGBT Module Preliminary Data V CE = 1000 V / c = 2 x 100 A at r c = 25 "C / c = 2 x 75 A at T c = 80 C • • • • • Power m odule Half-bridge/Chopper
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235bDS
0045flSb
2x100
C67076-A2104-A2
C67076-A2003-A2
fl23SbDS
siemens igbt BSM 75 gb 100
siemens igbt BSM 150 Gb 160 d
AL100-D
Q102
C67076-A2104-A2
siemens igbt BSM 150 gb 100 d
BSM 75 GB 120 D
siemens igbt BSM 100 gb
BSM 225
IGBT Power Module sieg
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BSM200GA100D
Abstract: bsm200ga100 siemens igbt BSM 200 GA 120 siemens igbt BSM 300 ga 120 siemens igbt BSM 200 GA 100 GA100D stt25
Text: bOE D fl23SbD5 OOMS^OM 4Tb • S I E G ■ SIEMENS SIEMENS AKTIENGESELLSCHAF BSM 200 GA 100 D IGBT Module Preliminary Data V CE = 1000 V J c = 2 7 5 A at r c = 25 C / c = 200 A at T c = 80 C • • • • • Power module Single switch Including fast free-wheel diodes
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fl23SbD5
BSM200GA100D
GA100D
C67076-A2001-A2
SII00253
SII00254
BSM200GA100D
bsm200ga100
siemens igbt BSM 200 GA 120
siemens igbt BSM 300 ga 120
siemens igbt BSM 200 GA 100
stt25
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IGBT Module BSM150GB120D
Abstract: siemens igbt BSM 150 gb 100 d siemens igbt BSM 150 Gb 160 d BSM 15 GB GAL 700 BSM150GB120D siemens igbt BSM 100 gb siemens igbt BSM 50 gb 100 d aa-es siemens
Text: bOE D • flEBSLGS OOMSâ^b S^T « S I E G SIEMENS SIEMENS AKTIENGESELLSCHAF ^ IGBT Module Preliminary Data 3 - 0 9 BSM150GB120D BSM 150 GAL 120 D V CE = 1200 V I c = 2 X 200 A at Tc = 25 C I c = 2 x 1 5 0 A at r c = 8 0 C • • • • • Power m odule
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BSM150GB120D
2x150
C67076-A2108-A2
C67076-A2013-A2
sii00202
IGBT Module BSM150GB120D
siemens igbt BSM 150 gb 100 d
siemens igbt BSM 150 Gb 160 d
BSM 15 GB
GAL 700
BSM150GB120D
siemens igbt BSM 100 gb
siemens igbt BSM 50 gb 100 d
aa-es siemens
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BSM25GD120D
Abstract: No abstract text available
Text: bGE » ûaaSbGS 0045032 47T « S I E G • SIEMENS SIEMENS AKTIENGESELLSCHAF - 9 7 BSM 25 GD 120 D IGBT Module Preliminary Data V CE = 1200 V / c = 6 x 35 A at Tc = 25 C I c = 6 x 25 A at Tc = 80 C • • • • • Power m odule 3-phase full bridge Including fast free-wheel diodes
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C67076-A2505-A2
sii00219
sii00220
BSM25GD120D
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BSM25GB120D
Abstract: C160 SC10 siemens igbt BSM 150 Gb 160 d SIEMENS ks
Text: LOE D • 0235bG5 QOMSÛ1L 2 2 ? « S I E G SIEMENS SIEMENS AKTIENGESELLSCHAF '7 ^ 3 3 - 0 7 BSM 25 GB 120 D BSM 25 G AL 120 D IGBT Module Preliminary Data VCE = 1200 V = 2 x 35 A at r c = 2 5 C = 2 x 2 5 A at r o = 8 0 'C Ic Ic • Power module • 3-phase full bridge
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0235bG5
C67076-A2109-A2
C67076-A2009-A2
S23SbDS
DGMSfi22
BSM25GB120D
C160
SC10
siemens igbt BSM 150 Gb 160 d
SIEMENS ks
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BSM10GD100D
Abstract: BSM10GD100 siemens igbt btb 148 600 GGM5 transient Diode bge
Text: bO E D • ÔE3SLiQS G G M 5 7 Ö 4 SIEMENS ^ 7 SIEMENS «SIEG AKTIENGESELLSCHAF BSM 10 GD 100 D IGBT Module Preliminary Data V CE = 1000 V I c = 6 x 11 A at T c = 25 C / c = 6 x 1 0 A a t 7'c = 40 C • • • • • Power m odule 3-phase full bridge Including fast free-wheel diodes
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GGM57Ã
C67076-A2507-A52
BSM10GD100D
BSM10GD100
siemens igbt
btb 148 600
GGM5
transient Diode bge
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siemens EM 235
Abstract: siemens igbt DD45 BSM 75 GB 120 D siemens igbt BSM 150 Gb 160 d siemens igbt BSM 75 gb 100
Text: feOE D • fl235bOS 004Sflb4 TÔT ■ S I E G SIEMENS SIEMENS AKTIENGESELLSCHAF BSM 75 GB 120 D BSM 75 G AL 120 D IGBT Module Preliminary Data y CE = 1 2 0 0 V / c = 2 x 100 A at Tc = 25 C / c = 2 x 7 5 A at r c = 8 0 C • • • • • Power m odule Half-bridge/Chopper
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fl235bOS
004Sflb4
C67076-A2106-A2
C67076-A2011-A2
SII00238
siemens EM 235
siemens igbt
DD45
BSM 75 GB 120 D
siemens igbt BSM 150 Gb 160 d
siemens igbt BSM 75 gb 100
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siemens igbt BSM 150 gb 100 d
Abstract: BSM100GB120D siemens igbt
Text: bDE D • 023Sb05 OOMSÔÛO 122 ■ S I E G SIEMENS SIEMENS AKTIENGESELLSCHAF ' 7 <23 o ’^ ” BSM 100 GB 120 D BSM 100 GAL 120 D IGBT Module Preliminary Data VCE = 1200 V I c = 2 x 1 3 5 A at r c = 25 'C / c = 2 x 1 0 0 A at r c = 80 C • • • • •
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235ti05
2x135
2x100
C67076-A2107-A2
C67076-A2012-A2
siemens igbt BSM 150 gb 100 d
BSM100GB120D
siemens igbt
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