side view infrared diode sharp
Abstract: GP2Y0A60 GP2Y10 GP2Y0A60SZ0F/GP2Y0A60SZLF GP2Y0AF15
Text: INFRARED EMITTING DIODE LINEUP / INFRARED EMITTING DIODES OPTO • Infrared Emitting Diode Lineup Type Single-end lead Side view type Surface mount type Package Half intensity angle Features Epoxy resin with lens Epoxy resin with lens/ leadless General purpose/Narrow beam angle
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GL480E00000F
GL4800E0000F
GL100MN0MP
GL100MN1MP
GL100MD1MP1
GP2Y0AH01K0Fâ
GP2Y1010AU0F
GP2Y1012AU0F
GP2Y1023AU0F
side view infrared diode sharp
GP2Y0A60
GP2Y10
GP2Y0A60SZ0F/GP2Y0A60SZLF
GP2Y0AF15
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GL100MNxMP
Abstract: GL100MN0MP GL100MN1MP PT100MC0MP GL100MN0MP1 PT100MC
Text: GL100MNxMP Series GL100MNxMP Series Compact, Surface Mount Type Infrared Emitting Diode • Features ■ Outline Dimensions 1. Compact and thin package 2. Surface mount type 3. 2-way mounting;top view/side view 4. Reflow soldering 5. High output type:GL100MN1MP
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GL100MNxMP
GL100MNxMP
GL100MN1MP
GL100MN0MP
PT100MC0MP/PT100MF0MP
GL100MN0MP
GL100MN1MP
PT100MC0MP
GL100MN0MP1
PT100MC
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GL100MN1MP
Abstract: GL100MN0MP
Text: GL100MNxMP Series Compact, Surface Mount Type Infrared Emitting Diode GL100MNxMP Series • Features ■ Outline Dimensions 1. Compact and thin package 2. Surface mount type 3. 2-way mounting ; top view/side view 4. Reflow soldering 5. High output type : GL100MN1MP
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GL100MNxMP
GL100MNxMP
GL100MN1MP
GL100MN0MP
PT100MC0MP/PT100MF0MP
GL100MN1MP
GL100MN0MP
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GL4910
Abstract: diaphragm
Text: GL4910 GL4910 Side View Type Infrared Emitting Diode for Camera AF Automatic Focusing • Features ■ Outline Dimensions 1. Small spot light diameter for easy beam diaphragming (*Apparent emission diameter : TYP. φ 0.32 mm) 5.0 ± 0.2 Gate burr (2.5 )
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GL4910
GL4910
diaphragm
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GL4910
Abstract: IR3e
Text: GL4910 GL4910 Side View Type Infrared Emitting Diode for Camera AF Automatic Focusing • Features ■ Outline Dimensions 1. Small spot light diameter for easy beam diaphragming (*Apparent emission diameter : TYP. φ 0.32 mm) 5.0 ± 0.2 Gate burr (2.5 )
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GL4910
GL4910
IR3e
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ultrasonic distance circuit design
Abstract: 2 MHz ultrasonic sensor distance measure ultrasonic GL4800 GL4800E0000F PT4800
Text: GL4800E0000F GL4800E0000F Infrared Emitting Diode • Features ■ Agency Approvals/Compliance 1. Side view emission type 2. Plastic mold with resin lens 3. Medium directivity angle Δθ: ±30° TYP. Peak emission wavelength: 950 nm TYP. 4. Radiant flux φe: 0.7 mW MIN.
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GL4800E0000F
2002/95/EC)
D1-A01001EN
ultrasonic distance circuit design
2 MHz ultrasonic sensor
distance measure ultrasonic
GL4800
GL4800E0000F
PT4800
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gl480e00000f
Abstract: GL480QE0000F alcohol sensor data sheet
Text: GL480E00000F GL480E00000F Infrared Emitting Diode • Features ■ Agency Approvals/Compliance 1. Side view emission type 2. Plastic mold with resin lens 3. Medium directivity angle Δθ: ±13° TYP. Peak emission wavelength: 950 nm TYP. 4. Radiant flux φe: 0.7 mW MIN.
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GL480E00000F
2002/95/EC)
D1-A01101EN
gl480e00000f
GL480QE0000F
alcohol sensor data sheet
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PT4110
Abstract: GL4100
Text: GL4100 GL4100 Side View and Thin Flat Type Infrared Emitting Diode • Features ■ Outline Dimensions 3.0 Detector center 2 - C0.5 1. Mouses 2. Track balls 0.7 Pale red transparent epoxy resin 1.4 4.0 0.3MAX. 4˚ 4˚ 0.1MAX. 1.7 2 - 0.45 +- 0.3 0.1 2 1
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GL4100
PT4110
GL4100
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PT4110
Abstract: GL4100
Text: GL4100 GL4100 Side View and Thin Flat Type Infrared Emitting Diode • Features ■ Outline Dimensions 3.0 Detector center 2 - C0.5 1. Mouses 2. Track balls 0.7 Pale red transparent epoxy resin 1.4 4.0 0.3MAX. 4˚ 4˚ 0.1MAX. 1.7 2 - 0.45 +- 0.3 0.1 2 1
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GL4100
PT4110)
PT4110
GL4100
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telefunken ta 750
Abstract: telefunken ta 750 amplifier telefunken ta 350 w200 diode telefunken wiring diagrams TFDU6100E CAM35C44 FDC37C669 FDC37N769 PC87108
Text: TELEFUNKEN Semiconductors TFDU6100E/TFDS6500E/TFDT6500E 2.7–5.5V Fast Infrared Transceiver Module Family FIR, 4 Mbit/s Features D Compliant to IrDA 1.2 (Up to D D D D D D 4 Mbit/s), HP–SIR, Sharp ASK and TV Remote Wide Operating Voltage Range (2.7 to 5.5 V )
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TFDU6100E/TFDS6500E/TFDT6500E
03-Apr-98
telefunken ta 750
telefunken ta 750 amplifier
telefunken ta 350
w200 diode
telefunken wiring diagrams
TFDU6100E
CAM35C44
FDC37C669
FDC37N769
PC87108
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sensor BPW34 application note
Abstract: touch sensitive siren using transistor tsop sensor Infrared sensor TSOP 1738 vo2223 vo3120 infrared signal transmission distance sensor BPW34 application note APPLICATION NOTE BpW34 BP104 application note
Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . G uide to Industr ial A pplic ations OPTOELECTRONICS OPTOELECTRONICS A PPL I CAT I O N S G U I D E w w w. v i s h a y. c o m OPTOELECTRONICS Guide to Industrial Applications Introduction As the world´s leading supplier of infrared emitters, photo detectors, and optical sensors,
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VMN-MS6520-1012
sensor BPW34 application note
touch sensitive siren using transistor
tsop sensor
Infrared sensor TSOP 1738
vo2223
vo3120
infrared signal transmission distance sensor
BPW34 application note
APPLICATION NOTE BpW34
BP104 application note
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sensor BPW34 application note
Abstract: CEA-2038 TSOP4438 touch sensitive siren using transistor VSMY2850 BP104 application note TEMD6200 TSOP58038 vo2223 TEMD6200FX01
Text: V ishay I ntertechnolog y, I nc . Optoelectronics – Products for Industrial Applications AND TEC I INNOVAT O L OGY Guide to Industrial Applications N HN OPTOELECTRONICS O 19 62-2012 TABLE OF CONTENTS
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VMN-MS6520-1201
sensor BPW34 application note
CEA-2038
TSOP4438
touch sensitive siren using transistor
VSMY2850
BP104 application note
TEMD6200
TSOP58038
vo2223
TEMD6200FX01
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TSSP4038
Abstract: No abstract text available
Text: V i s h ay I nte r tec h nolog y, I nc . OPTOELECTRONICS Optoelectronics – Products for Industrial Applications Guide to Industrial Applications TABLE OF CONTENTS Introduction. 2
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VMN-MS6520-1311
TSSP4038
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Vishay TYPE 40D
Abstract: Vishay 40d AC 1506 panasonic inverter dv 707
Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . OPTOELECTRONICS Guide to Industrial Applications TABLE OF CONTENTS Introduction. 2
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VMN-MS6520-1506
Vishay TYPE 40D
Vishay 40d
AC 1506
panasonic inverter dv 707
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RC5 philips tfdu6300
Abstract: 293D EN60825-1 IEC60825-1 TFDU6300 TFDU6300-TR3 TFDU6300-TT3 TFDU6301 infrared RC6 protocol philips RC6 Infrared
Text: TFDU6300 Vishay Semiconductors Fast Infrared Transceiver Module FIR, 4 Mbit/s for 2.4 V to 3.6 V Operation Description The TFDU6300 transceiver is an infrared transceiver module compliant to the latest IrDA physical layer low-power standard for fast infrared data communication, supporting IrDA speeds up to 4 Mbit/s (FIR), HPSIR , Sharp ASK® and carrier based remote control
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TFDU6300
TFDU6300
08-Apr-05
RC5 philips tfdu6300
293D
EN60825-1
IEC60825-1
TFDU6300-TR3
TFDU6300-TT3
TFDU6301
infrared RC6 protocol philips
RC6 Infrared
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Leader 8020 schematics Oscilloscope
Abstract: smd diode schottky code marking GW sn 16848 APPLICATION NOTE BpW77 IEC-60050 BPw104 PHOTO TRANSISTOR BPW77 BPW34 PHOTODIODE THEORY Marking Code SMD databook 2010 bpw104s
Text: VISHAY INTERTECHNO L O G Y , INC . INTERACTIVE data book infrared emitters and detectors vishay semiconductors vse-db0103-0810 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents
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vse-db0103-0810
Leader 8020 schematics Oscilloscope
smd diode schottky code marking GW
sn 16848
APPLICATION NOTE BpW77
IEC-60050
BPw104
PHOTO TRANSISTOR BPW77
BPW34 PHOTODIODE THEORY
Marking Code SMD databook 2010
bpw104s
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293D
Abstract: EN60825-1 IEC60825-1 TFDU6300 TFDU6301 TFDU6301-TR3 TFDU6301-TT3 06-APR-06
Text: TFDU6301 Vishay Semiconductors Fast Infrared Transceiver Module FIR, 4 Mbit/s for 2.4 V to 3.6 V Operation and Low-Voltage Logic (1.8 V) Description The TFDU6301 transceiver is an infrared transceiver module compliant to the latest IrDA physical layer low-power standard for fast infrared data communication, supporting IrDA speeds up to 4 Mbit/s (FIR), HPSIR , Sharp ASK® and carrier based remote control
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TFDU6301
TFDU6301
08-Apr-05
293D
EN60825-1
IEC60825-1
TFDU6300
TFDU6301-TR3
TFDU6301-TT3
06-APR-06
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Untitled
Abstract: No abstract text available
Text: GL4910 SHARP GL4910 Side View Type Infrared Emitting Diode for Camera AF Automatic Focusing • Features ■ Outline Dimensions (Unit : mm) 1. Small spot light diameter for easy beam diaphragming (* Apparent emission diameter : TYP. 0 0.32 mm) 2. Uniform emission intensity on chip emitting surface
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GL4910
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Untitled
Abstract: No abstract text available
Text: SHARP GL4100 GL4100 Side View and Thin Flat Type infrared Emitting Diode • Features ■ Outline Dimensions U n it: mm 1. C o m p ac t flat package 2. W id e b e a m angle 2 - C0.5 - 3.0 — 1.8 —■ 0.7 Pale red transparent 0.7_i epoxy resin Detector center
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GL4100
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Untitled
Abstract: No abstract text available
Text: GL4200 SHARP GL4200 Side View and Thin Flat Type Infrared Emitting Diode • Features ■ Outline Dimensions U n it: m m 1. Compact flat package (Volume : 2/3 max. of GL480) 3 .0 2- 2. Wide beam angle C O .5 1 to con O ö i1)2 < Î r5 CT) ■ Applications
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GL4200
GL480)
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rover
Abstract: J1000
Text: SPEb^fo. / ED-Q2Û78 , x . ISSUE Maiçh;i8,20Q2 SHARP OPTOELECTRONIC DEVICES DIVISION ELECTRONIC COMPONENTS GROUP SHARP CORPORATION SPECIFICATION DEVICE SPECIFICATION FOR INFRARED EMITTING DIODE MODEL No. G L 100M N 0M P1M Specified for Enclosed please find copies of the Specifications which consists of 14 pages including cover.
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ED-Q2078
GL100MN0MP1M
GL100MN0MP1M
rover
J1000
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smd diode 777
Abstract: Ss 24 DIODE SMD SMD DIODE BOOK sr smd diode opic Diode 1_b SMD
Text: TENTATIVE NEW PRODUCT INFORMA TION GL1F21/GL1F211 IR DATA COMMUNICATION EMITTER SMP type IR Emitting Diode for IR Data Communication Conform to IrDAI.O I • General description Outline dimensions (Unitmm) SHARPs GL1F21/211 are SMD type IR emitting diode
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GL1F21/GL1F211
GL1F21/211
GL1F21
GL1F211
1S1U2Q/IS1U21)
IS1U20/IS1U21)
201/GUF21/GUF211)
3KGL1F201/GL1F211
smd diode 777
Ss 24 DIODE SMD
SMD DIODE BOOK
sr smd diode
opic
Diode 1_b SMD
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InSb spectral response
Abstract: BARNES ENGINEERING metal detectors circuit D13E metal detector 140C D03E D04EJ D05E Barnes Engineering Company
Text: F D P CORP. BARNES ENGRG E D 0 CO RP/ BARNES ENGRG _ _4 5 C 0 0 4 5 2 4S DE .jB O S T b S S D . T-41-4r 0D0D4Sa 0 |~ Bulletin 2-312 BARNES Barnes Engineering Company 30 Commerce Road Stamford, Connecticut 06904 Telephone 203 348-5381 The most sensitive detectors in the near infrared
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T-41-41'
D04EJ.
D06EJ.
T-41-41-
D07EJ,
13-Dewar
Telex/965921
D155S.
InSb spectral response
BARNES ENGINEERING
metal detectors circuit
D13E
metal detector
140C
D03E
D04EJ
D05E
Barnes Engineering Company
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GP1U501X
Abstract: GP1U52X GP1U521Y sharp GP1U501X GP1U521X GP1U501 GP1U503X GP1U50x GP1U GP1U52
Text: 1Q EDI ûlflcmû G000523Ü| SHARP ELEK/ flELEC DIV Light detecting units v^y/ ^ 7 • GENERAL DESCRIPTION ■ FEATURES Sharp light detecting units combine a PIN photodiode and a signal processing circuit in one unit. Due to their compact packages, they are
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G000523Ã
GL527,
GL528,
GL537
GL538
GP1U56
GP1U50X
GP1U52X
GP1U52Y
GP1U503X
GP1U501X
GP1U521Y
sharp GP1U501X
GP1U521X
GP1U501
GP1U503X
GP1U
GP1U52
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