SID MICROELECTRONICS Search Results

br b2d

Abstract: ST5080 DIP20 LSD23 PLCC28 ST5421 ST5421CFN ST5421CP ST5451 "di code"
Contextual Info: ST5421 SID-GCI : S/T INTERFACE DEVICE WITH GCI PRELIMINARY DATA September 1995 PLCC28 ORDERING NUMBERS: ST5421CP ST5421CFN PIN CONNECTIONS Top views FSA LO- LO+ LI+ 4 3 2 1 28 27 26 LI- VCC LSD- DIP20 VCC 5 25 GND N.C. 6 24 GND MCLK/XTAL 7 23 MO XTAL2 8

CDH15

Contextual Info: 2,0 MAX>- 1 2 3 4 5 6 7 8 9 10 RESETB CS1B - RS VDD SCLK SID 0.7 FRDNT vss VDUT C3-IC1+ 11 12 13 ci- 14 15 16 17 18 19 20 VR VO VI C2-IC2- •PRO TECTIVE GLUE UV TAPE' 8901918953908900 A PRO TECTIVE TAPE V2 V3 V4 NC • HEATSEAL DETAIL Ai NOTES STN o r FSTN

bt 1696

Abstract: ST5080 TFK 202 tfk 811 s
Contextual Info: r= 7 * li. S G S -T H O M S O N [ ¡ » I M I I L I » « S T 5 4 2 1 SID-GCI : S/T INTERFACE DEVICE WITH GCI PRELIMINARY DATA . • . . ■ ■ ■ SINGLE CHIP 4 WIRES 192kb/s TRANS­ CEIVER FULLY COMPLYING WITH CCITT 1.430 ISDN BASIC ACCESS HANDLING 144kb/s

schematic diagram tv sharp

Abstract: tv schematic diagram SHARP tv schematic diagram SHARP power supply schematic diagram 200v dc voltage regulator sharp tv schematic diagram schematic tv sharp HX 711 sharp tv power supply section circuit diagram TV SHARP Schematic Power Supply power supply schematic diagram sharp
Contextual Info: NEW PRODUCT INFORMATION Primary Regulator PQ1PF1 O U T LIN E D IM E N S IO N S G E N E R A L D E S C R IP T IO N U n it : m m Sharp's PQ 1PF1 achieved an integration o f power M O SFET and control IC, used for primary sid e o f sw itch in g p ow er su p p lies. T h is d e v ic e m eets the n eed for m ore

SIM 900 file attachment email AT COMMANDS

Abstract: PROCOMM PLUS ATS10 ATS12 MNP10 GGSN ST Microelectronics date code format
Contextual Info: iMODEM: COMMAND REFERENCE MANUAL Supported Commands, and Definitions and References for the following iMODEM Products: ANALOG iMODEM Models CH2166 CH2166A GPRS/RF iMODEM Models CH2168 CH2168A 2008 Cermetek Microelectronics, Inc. Page 1 Document No. 612-0004 Rev. C1 12/08

S6B0724A01-B0CY

Abstract: TM11264JCCWG S6B0724A01 ibl30
Contextual Info: SPECIFICATION FOR LCD MODULE Model No. TM11264JCCWG Prepared by: Date: Checked by : Date: Verified by : Date: Approved by: Date: TIANMA MICROELECTRONICS CO., LTD Ver.1.0 REVISION RECORD Date Ref. Page Revision No. 1/22 Revision Items Check & Approval Ver.1.0

Contextual Info: UNITED MICROELECTRONICS D E j ^32SfllE OOOOED4 □ f ~ D ~T*J*S*07-07_ U^991230 C/D Tone/Pulse Dialeri FEATURES PIN CONFIGURATION • Tone/Pulse Switchable Touch Key or Slide Switch ■ 32 Digit Capacity for Redialing ■ Automatic Mix Redialing (Last Number Redial) of

1683K

Abstract: 1683-K
Contextual Info: MSK DWG. NO. REV. SHEET SCALE SIZE 1711-12459 C 1 OF 13 NTS A 8218 Rev J REVISIONS REV. ECO NO. A B C DATE APPROVED RLSD 13329 13808 13884 - 11/30/05 01/23/06 07/11/06 C. HEISELMAN C. HEISELMAN C. HEISELMAN „ G/ÿ/èfe S REVISION REVISION INDEX SHEET c 2

IN914

Abstract: W27LE520 W27LE520S-70 W27LE520S-90 W27LE520W-70 W27LE520W-90
Contextual Info: Preliminary W27LE520 64K x 8 ELECTRICALLY ERASABLE EPROM GENERAL DESCRIPTION The W27LE520 is a high speed, low power Electrically Erasable and Programmable Read Only Memory organized as 65,536 × 8 bits. It includes latches for the lower 8 address lines to multiplex

IN914

Abstract: W27E520 W27E520S-70 W27E520S-90 W27E520W-70 W27E520W-90
Contextual Info: W27E520 64K x 8 ELECTRICALLY ERASABLE EPROM GENERAL DESCRIPTION The W27E520 is a high speed, low power Electrically Erasable and Programmable Read Only Memory organized as 65,536 × 8 bits. It includes latches for the lower 8 address lines to multiplex with the 8 data lines. To cooperate with the MCU, this device could save the external TTL

IN914

Abstract: W27E520 W27E520S-70 W27E520S-90 W27E520W-70 W27E520W-90
Contextual Info: Advance Information W27E520 64K x 8 ELECTRICALLY ERASABLE EPROM GENERAL DESCRIPTION The W27E520 is a high speed, low power Electrically Erasable and Programmable Read Only Memory organized as 65,536 × 8 bits. It includes latches for the lower 8 address lines to multiplex

5.5V .22f capacitor

Abstract: .22F capacitor 3.3V IN914 W27C520 W27C520S-70 W27C520S-90 W27C520W-70 W27C520W-90
Contextual Info: Preliminary W27C520 64K x 8 ELECTRICALLY ERASABLE EPROM GENERAL DESCRIPTION The W27C520 is a high speed, low power Electrically Erasable and Programmable Read Only Memory organized as 65,536 × 8 bits. It includes latches for the lower 8 address lines to multiplex with the 8

Contextual Info: Preliminary W27E520 64K x 8 ELECTRICALLY ERASABLE EPROM GENERAL DESCRIPTION The W27E520 is a high speed, low power Electrically Erasable and Programmable Read Only Memory organized as 65,536 × 8 bits. It includes latches for the lower 8 address lines to multiplex

st 9318

Abstract: LINE FEED ISDN h9318 AN-492 C1995 TP3076 TP3401 TP3410 TP3420 TP3421
Contextual Info: WHAT IS ISDN The Integrated Services Digital Network commonly called ISDN is simply an all digital communications network which offers its users a variety of different capabilities In due time the ISDN will change the way that many if not all of us communicate be it through voice data or video communication To that end the ISDN is an invisible rebuilding of the

Contextual Info: W29EE011 128K x 8 CMOS FLASH MEMORY GENERAL DESCRIPTION The W29EE011 is a 1-megabit, 5-volt only CMOS flash memory organized as 128K × 8 bits. The device can be programmed and erased in-system with a standard 5V power supply. A 12-volt VPP is not required. The unique cell architecture of the W29EE011 results in fast program/erase operations

IN914

Abstract: W27L520 W27L520S-70 W27L520S-90 W27L520W-70 W27L520W-90 173-Mil
Contextual Info: Preliminary W27L520 64K x 8 ELECTRICALLY ERASABLE EPROM GENERAL DESCRIPTION The W27L520 is a high speed, low power Electrically Erasable and Programmable Read Only Memory organized as 65,536 × 8 bits. It includes latches for the lower 8 address lines to multiplex

IN914

Abstract: W27L520 W27L520S-70 W27L520S-90 W27L520W-70 W27L520W-90 AD4813
Contextual Info: W27L520 64K x 8 ELECTRICALLY ERASABLE EPROM GENERAL DESCRIPTION The W27L520 is a high speed, low power Electrically Erasable and Programmable Read Only Memory organized as 65,536 × 8 bits. It includes latches for the lower 8 address lines to multiplex with the 8 data

Contextual Info: Advance Information W27LE520 64K x 8 ELECTRICALLY ERASABLE EPROM GENERAL DESCRIPTION The W27LE520 is a high speed, low power Electrically Erasable and Programmable Read Only Memory organized as 65,536 × 8 bits. It includes latches for the lower 8 address lines to multiplex

y51 h 120c

Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Contextual Info: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK

W29EE011-15

Abstract: W29EE011P-90 W29EE011 W29EE011-90
Contextual Info: W29EE011 128K x 8 CMOS FLASH MEMORY GENERAL DESCRIPTION The W29EE011 is a 1-megabit, 5-volt only CMOS flash memory organized as 128K × 8 bits. The device can be programmed and erased in-system with a standard 5V power supply. A 12-volt VPP is not required. The unique cell architecture of the W29EE011 results in fast program/erase operations

Contextual Info: W29C040 512K x 8 CMOS FLASH MEMORY GENERAL DESCRIPTION The W29C040 is a 4-megabit, 5-volt only CMOS page mode Flash Memory organized as 512K × 8 bits. The device can be written erased and programmed in-system with a standard 5V power supply. A 12-volt VPP is not required. The unique cell architecture of the W29C040 results in fast write (erase/

Contextual Info: W29C020C 256K x 8 CMOS FLASH MEMORY GENERAL DESCRIPTION The W29C020C is a 2-megabit, 5-volt only CMOS flash memory organized as 256K × 8 bits. The device can be written erased and programmed in-system with a standard 5V power supply. A 12-volt VPP is not required. The unique cell architecture of the W29C020C results in fast write (erase/program)

W29C040P-70B

Abstract: W29C040 W29C040-12 W29C040T-90
Contextual Info: W29C040 512K x 8 CMOS FLASH MEMORY GENERAL DESCRIPTION The W29C040 is a 4-megabit, 5-volt only CMOS page mode Flash Memory organized as 512K × 8 bits. The device can be written erased and programmed in-system with a standard 5V power supply. A 12-volt VPP is not required. The unique cell architecture of the W29C040 results in fast write (erase/

Contextual Info: /= T ^ 7/ S G S -T H O M S O N R TRIPLE OUTPUT POWER SUPPLY CONTROLLER • DUAL PWM BUCK CONTROLLERS 3.3V and 5.1V ■ 12V/120m ALINEAR REGULATOR ■ DUALSYN C H RECTIFIERS DRIVERS ■ 96% EFFICIENCY ACHIEVABLE ■ 50 jjA @ 1 2V IN STAND BY ■ 5.5V TO 20V SUPPLY VOLTAGE