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    SIA921EDJ Price and Stock

    Vishay Siliconix SIA921EDJ-T1-GE3

    MOSFET 2P-CH 20V 4.5A PPAK8X8
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    DigiKey SIA921EDJ-T1-GE3 Cut Tape 8,055 1
    • 1 $1
    • 10 $0.623
    • 100 $1
    • 1000 $0.28309
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    SIA921EDJ-T1-GE3 Digi-Reel 8,055 1
    • 1 $1
    • 10 $0.623
    • 100 $1
    • 1000 $0.28309
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    SIA921EDJ-T1-GE3 Reel 6,000 3,000
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    • 10000 $0.24492
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    Vishay Siliconix SIA921EDJ-T4-GE3

    MOSFET 2P-CH 20V 4.5A PPAK8X8
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    DigiKey SIA921EDJ-T4-GE3 Digi-Reel 1
    • 1 $1.01
    • 10 $0.629
    • 100 $1.01
    • 1000 $0.28596
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    SIA921EDJ-T4-GE3 Reel 3,000
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    SIA921EDJ-T4-GE3 Cut Tape 1
    • 1 $1.01
    • 10 $0.629
    • 100 $1.01
    • 1000 $0.28596
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    Vishay Intertechnologies SIA921EDJ-T4-GE3

    DUAL P-CHANNEL 20-V (D-S) MOSFET - Tape and Reel (Alt: SIA921EDJ-T4-GE3)
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    Avnet Americas SIA921EDJ-T4-GE3 Reel 18 Weeks 3,000
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    Mouser Electronics SIA921EDJ-T4-GE3 5,650
    • 1 $0.61
    • 10 $0.54
    • 100 $0.369
    • 1000 $0.262
    • 10000 $0.202
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    TTI SIA921EDJ-T4-GE3 Reel 3,000
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    Vishay Intertechnologies SIA921EDJ-T1-GE3

    Transistor MOSFET Array Dual P-CH 20V 4.5A 6-Pin PowerPAK SC-70 T/R - Tape and Reel (Alt: SIA921EDJ-T1-GE3)
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    Avnet Americas SIA921EDJ-T1-GE3 Reel 18 Weeks 3,000
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    Mouser Electronics SIA921EDJ-T1-GE3 71,986
    • 1 $0.76
    • 10 $0.506
    • 100 $0.348
    • 1000 $0.253
    • 10000 $0.2
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    Verical SIA921EDJ-T1-GE3 3,000 3,000
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    Arrow Electronics SIA921EDJ-T1-GE3 3,000 18 Weeks 3,000
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    Newark SIA921EDJ-T1-GE3 Cut Tape 6,862 1
    • 1 $0.655
    • 10 $0.57
    • 100 $0.409
    • 1000 $0.409
    • 10000 $0.409
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    SIA921EDJ-T1-GE3 Reel 3,000
    • 1 $0.282
    • 10 $0.282
    • 100 $0.282
    • 1000 $0.282
    • 10000 $0.255
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    Bristol Electronics SIA921EDJ-T1-GE3 2,769
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    TTI SIA921EDJ-T1-GE3 Reel 18,000 3,000
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    TME SIA921EDJ-T1-GE3 1
    • 1 $0.581
    • 10 $0.507
    • 100 $0.338
    • 1000 $0.296
    • 10000 $0.283
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    Avnet Asia SIA921EDJ-T1-GE3 20 Weeks 3,000
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    EBV Elektronik SIA921EDJ-T1-GE3 19 Weeks 3,000
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    SIA921EDJ Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SIA921EDJ-T1-GE3 Vishay Siliconix FETs - Arrays, Discrete Semiconductor Products, MOSFET 2P-CH 20V 4.5A SC70-6 Original PDF
    SIA921EDJ-T4-GE3 Vishay Siliconix FETs - Arrays, Discrete Semiconductor Products, MOSFET 2P-CH 20V 4.5A SC70-6 Original PDF

    SIA921EDJ Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: SiA921EDJ Vishay Siliconix Dual P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) () ID (A) 0.059 at VGS = - 4.5 V - 4.5a 0.098 at VGS = - 2.5 V - 4.5a Qg (Typ.) 4.9 nC PowerPAK SC-70-6 Dual 1 S1 2 G1 3 D2 D1 D1 6 • Load Switch, PA Switch and Battery Switch for Portable


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    PDF SiA921EDJ SC-70 SC-70-6 SiA921EDJ-T1-GE3 SiA921EDJ-T4-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A

    Untitled

    Abstract: No abstract text available
    Text: SiA921EDJ Vishay Siliconix Dual P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) () ID (A) 0.059 at VGS = - 4.5 V - 4.5a 0.098 at VGS = - 2.5 V - 4.5a Qg (Typ.) 4.9 nC PowerPAK SC-70-6 Dual 1 S1 2 G1 3 D2 D1 D1 6 • Load Switch, PA Switch and Battery Switch for Portable


    Original
    PDF SiA921EDJ SC-70-6 SC-70 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    SiA921EDJ

    Abstract: SC-70-6
    Text: SiA921EDJ Vishay Siliconix Dual P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.059 at VGS = - 4.5 V - 4.5a 0.098 at VGS = - 2.5 V - 4.5a • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


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    PDF SiA921EDJ SC-70 2002/95/EC SC-70-6 18-Jul-08

    Untitled

    Abstract: No abstract text available
    Text: SiA921EDJ Vishay Siliconix Dual P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.059 at VGS = - 4.5 V - 4.5a 0.098 at VGS = - 2.5 V - 4.5a • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original
    PDF SiA921EDJ SC-70 2002/95/EC SC-70-6 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    SIA921EDJ

    Abstract: SC-70-6 PART marking d2
    Text: SiA921EDJ Vishay Siliconix Dual P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.059 at VGS = - 4.5 V - 4.5a 0.098 at VGS = - 2.5 V - 4.5a • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original
    PDF SiA921EDJ SC-70 SC-70-6 18-Jul-08 PART marking d2

    SC-70-6

    Abstract: SiA921EDJ
    Text: SiA921EDJ Vishay Siliconix Dual P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.059 at VGS = - 4.5 V - 4.5a 0.098 at VGS = - 2.5 V - 4.5a • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original
    PDF SiA921EDJ SC-70 2002/95/EC SC-70-6 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: SiA921EDJ Vishay Siliconix Dual P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.059 at VGS = - 4.5 V - 4.5a 0.098 at VGS = - 2.5 V - 4.5a • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original
    PDF SiA921EDJ SC-70 2002/95/EC SC-70-6 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    AN609

    Abstract: SiA921EDJ
    Text: SiA921EDJ_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/Tank and Cauer/Filter configurations are included. When implemented in P-Spice,


    Original
    PDF SiA921EDJ AN609, 06-Feb-09 AN609

    Untitled

    Abstract: No abstract text available
    Text: SiA921EDJ Vishay Siliconix Dual P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.059 at VGS = - 4.5 V - 4.5a 0.098 at VGS = - 2.5 V - 4.5a • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


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    PDF SiA921EDJ SC-70 2002/95/EC SC-70-6 11-Mar-11

    NX3008

    Abstract: IRLHS6242 SiA431DJ AON2408 SSM6J503NU IRLHS2242 AON2420 DMN3730UFB4 FDMA1028NZ FDMA3028N
    Text: Advanced cross reference list DFN* MOSFETs *DFN: discrete flat no-leads *in development, release in Q3 2012 0.6 0.6 1.1 1.1 1 1 1 0.9 0.9 1 0.9 0.53 0.53 0.9 0.9 0.45 0.45 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.6 0.6 0.5 0.5 1 1 1.5 0.95 0.95 1.05 1.05 0.95 1.05 1.1


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    PDF AON2240 AON2401 AON2405 AON2406 AON2407 AON2408 AON2409 AON2410 AON2420 AON2701 NX3008 IRLHS6242 SiA431DJ SSM6J503NU IRLHS2242 DMN3730UFB4 FDMA1028NZ FDMA3028N

    FSQ510 Equivalent

    Abstract: BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2
    Text: SEMICONDUCTORS MCU/MPU/DSP Atmel. . . . . . . . . 167, 168, 169, 170, 171, 172 Blackhawk. . . . . . . . . . . . . . . . . . . . . . . . . 173 Cyan . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 174 Cypress. . . . . . . . . . . . . . . 175, 176, 177, 178


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    PDF GP-20) FSQ510 Equivalent BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2

    Arduino Mega2560

    Abstract: 13001 S 6D TRANSISTOR arduino uno rev 3 agilent optical encoder 9988 MZ 13001 TRANSISTOR arduino mega 2650 skiip 613 gb 123 ct arduino sound sensor module pic arduino nano mc34063l
    Text: ND3% BASE1 XXXX2108-0010-1-P 10 TSQ: 3001 CMS: CMS-USM TS host OP: NN COMP: 15-07-11 Hour: 13:07 TS:TS date TS time MCUS, MPUS, DSPS & DEVELOPMENT TOOLS Find Datasheets Online 8-BIT MCUS & DEVELOPMENT TOOLS 1 PSoC 3 DEVELOPMENT KITS ARDUINO MCU DEVLOPMENT PLATFORM


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    PDF CY8C38 CY8C29 incl795 12T9797 12T9804 12T9803 12T9800 12T9802 12T9801 12T9805 Arduino Mega2560 13001 S 6D TRANSISTOR arduino uno rev 3 agilent optical encoder 9988 MZ 13001 TRANSISTOR arduino mega 2650 skiip 613 gb 123 ct arduino sound sensor module pic arduino nano mc34063l

    SiA427DJ

    Abstract: SiA450DJ SiA447DJ SiA413DJ SiA413 SiA445EDJ SIA915DJ
    Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . MOSFETs - Small 2 mm x 2 mm Size and Low On-resistance AND TEC I INNOVAT O L OGY PowerPAK SC-70 N HN POWER MOSFETs O 19 62-2012 Half the Size of TSOP-6 Without Compromising On-Resistance KEY BENEFITS • 2 mm x 2 mm footprint area is 50 % of TSOP-6 with comparable on-resistance:


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    PDF SC-70 SC-70 com/mosfets/powerpak-sc-70-package/ VMN-PT0131-1209 SiA427DJ SiA450DJ SiA447DJ SiA413DJ SiA413 SiA445EDJ SIA915DJ

    Si7141

    Abstract: SiA447DJ SI7615A
    Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . MOSFETs - Lowest On-Resistance Per Area Achieved for a P-Channel MOSFET AND TEC I INNOVAT O L OGY TrenchFET Gen III - P-Channel N HN POWER MOSFETs O 19 62-2012 Breakthrough P-Channel Technology Dramatically Cuts RDS on


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    PDF SC-75 SC-70 VMN-PT0197-1209 Si7141 SiA447DJ SI7615A

    LTC1154

    Abstract: No abstract text available
    Text: LTM2884 Isolated USB Transceiver with Isolated Power Features Description Isolated USB Transceiver: 2500VRMS for 1 Minute n USB 2.0 Full Speed and Low Speed Compatible n Integrated Isolated DC/DC Converter, External or Bus Powered n Auto-Configuration of Bus Speed


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    PDF LTM2884 2500VRMS 500mA 200mA 30kV/Î upstreaM2882 LTM2883 LTM2892 RS485/RS422 RS232 LTC1154

    LTM2884

    Abstract: LTC1154
    Text: LTM2884 Isolated USB Transceiver with Isolated Power Features Description Isolated USB Transceiver: 2500VRMS for 1 Minute n USB 2.0 Full Speed and Low Speed Compatible n Integrated Isolated DC/DC Converter, External or Bus Powered n Auto-Configuration of Bus Speed


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    PDF LTM2884 2500VRMS 500mA 200mA 30kV/Î upstrea2882 LTM2883 LTM2892 RS485/RS422 RS232 LTM2884 LTC1154

    Diode SOT-23 marking 15d

    Abstract: SI4210 si4812b SI-4102 SI7149DP SiM400 si4932 si7135 SiB914 SI4477
    Text: V ISHAY INTERTECHN O L O G Y , INC . M O S F ET s LITTLE F O O T LITTLE F O O T ® P l u s Tr e n c h F E T ® Sk yFE T® Tu r b o F E T ® ChipFE T® P o w e r PA K ® P o l a r PA K ® P o w e r PA I R w w w. v i s h a y. c o m Selector Guide low-voltage Power MOSFETs


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    PDF Diod92 VMN-SG2127-0911 Diode SOT-23 marking 15d SI4210 si4812b SI-4102 SI7149DP SiM400 si4932 si7135 SiB914 SI4477

    SI4497

    Abstract: No abstract text available
    Text: V is h ay I n t e rt e c h n olo g y, I n c . Power MOSFETs Key features and Benefits • Lowest on-resistance per area achieved for a p-channel provides on-resistance down to half of previous industry best • Down to sub 2 mΩ in SO-8 footprint area • Variety of package sizes, from PowerPAK SO-8 down to 1.6 mm x 1.6 mm


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    PDF SC-75 VMN-PT0197-1006 SI4497