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SI952 Datasheets (4)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
Si9529DY		Toshiba	Power MOSFETs Cross Reference Guide		Original	PDF
Si9529DY		Vishay Intertechnology	Dual N- and P-Channel 2.5-V (G-S) Rated MOSFET		Original	PDF
SI9529DY		Vishay Telefunken	Dual N- and P-channel 2.5-v (g-s) Rated Mosfet		Original	PDF
SI9529DY-T1		Vishay Intertechnology	Dual N- and P-Channel 2.5-V (G-S) Rated MOSFET		Original	PDF

SI952 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: Si9529DY Dual N- and P-Channel 2.5-V G-S Rated MOSFET Product Summary VDS (V) N Channel N-Channel 20 P Channel P-Channel –12 12 rDS(on) (W) ID (A) 0.03 @ VGS = 4.5 V "6 0.04 @ VGS = 2.5 V "5.2 0.05 @ VGS = –4.5 V "5 0.074 @ VGS = –2.5 V "4.1 D1 D1	Original	PDF	Si9529DY 08-Apr-05
Si9529DY Abstract: No abstract text available Text: Si9529DY Dual N- and P-Channel 2.5-V G-S Rated MOSFET Product Summary VDS (V) N Channel N-Channel 20 P Channel P-Channel –12 12 rDS(on) (W) ID (A) 0.03 @ VGS = 4.5 V "6 0.04 @ VGS = 2.5 V "5.2 0.05 @ VGS = –4.5 V "5 0.074 @ VGS = –2.5 V "4.1 D1 D1	Original	PDF	Si9529DY S-49520--Rev. 18-Dec-96
Si9529DY Abstract: si9529 Text: Si9529DY Dual Enhancement-Mode MOSFET N- and P-Channel Product Summary VDS (V) N-Channel 20 P-Channel –12 rDS(on) (W) ID (A) 0.03 @ VGS = 4.5 V "6 0.04 @ VGS = 2.5 V "5.2 0.05 @ VGS = –4.5 V "5 0.074 @ VGS = –2.5 V "4.1 D1 D1 S2 SO-8 S1 1 8 D1 G1 2	Original	PDF	Si9529DY S-42817--Rev. 24-Jun-96 si9529
Si9529DY Abstract: No abstract text available Text: Si9529DY Dual N- and P-Channel 2.5-V G-S Rated MOSFET Product Summary VDS (V) N Channel N-Channel 20 P Channel P-Channel –12 12 rDS(on) (W) ID (A) 0.03 @ VGS = 4.5 V "6 0.04 @ VGS = 2.5 V "5.2 0.05 @ VGS = –4.5 V "5 0.074 @ VGS = –2.5 V "4.1 D1 D1	Original	PDF	Si9529DY 18-Jul-08
Si9529DY Abstract: No abstract text available Text: Si9529DY Dual N- and P-Channel 2.5-V G-S Rated MOSFET Product Summary VDS (V) N-Channel 20 P-Channel –12 rDS(on) (W) ID (A) 0.03 @ VGS = 4.5 V "6 0.04 @ VGS = 2.5 V "5.2 0.05 @ VGS = –4.5 V "5 0.074 @ VGS = –2.5 V "4.1 D1 D1 S2 SO-8 S1 1 8 D1 G1 2	Original	PDF	Si9529DY S-49520--Rev. 18-Dec-96
Si6552DQ Abstract: Si9529DY Si9928DY Text: Si9928DY Dual Enhancement-Mode MOSFET N- and P-Channel Product Summary VDS (V) N-Channel 20 P-Channel –20 rDS(on) (W) ID (A) 0.05 @ VGS = 4.5 V "5.0 0.06 @ VGS = 3.0 V "4.2 0.08 @ VGS = 2.7 V "3.6 0.11 @ VGS = –4.5 V "3.4 0.15 @ VGS = –3.0 V "2.9 0.19 @ VGS = –2.7 V	Original	PDF	Si9928DY Si9529DY Si6552DQ S-47958--Rev. 15-Apr-96
mosfet cross reference Abstract: SMP40N06 SMP75N06-08 SI9952DY SMP60N03-10L IRFZ44 TO-263 Si9948DY irf1010e equivalent IRLL014N NDT3055L Text: Discrete POWER & Signal Technologies MOSFET Cross Reference Guide Industry Recommended Part Number Fairchild Device Package Industry Recommended Part Number Fairchild Device 2N7000 2N7000 TO-92, N IRF7203 FDS9435A 2N7002 2N7002 SOT-23, N IRF7204 NDS8434A SO-8, P	Original	PDF	2N7000 IRF7203 FDS9435A 2N7002 OT-23, IRF7204 NDS8434A BS170 mosfet cross reference SMP40N06 SMP75N06-08 SI9952DY SMP60N03-10L IRFZ44 TO-263 Si9948DY irf1010e equivalent IRLL014N NDT3055L
SSP35n03 Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent Text: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A	Original	PDF	5KE100A 5KE100CA 5KE10A 5KE10CA 5KE110A 5KE110CA 5KE11A 5KE11CA 5KE120A 5KE120CA SSP35n03 bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
YTA630 Abstract: MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620 Text: Power MOSFETs Cross Reference Alphanumerically Part Number VDSS V RDS(ON) (ohm) ID (A) PD (W) Package 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 2SJ420 2SJ421 2SJ438 2SJ439 2SJ464 2SJ465 2SJ468 2SJ469 2SJ482 2SJ507 2SJ508 2SJ509	Original	PDF	2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 YTA630 MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620
rtd pt100 interface to 8051 Abstract: 24V 20A SIEMENS battery charger LM2560 smd 58a transistor 6-pin pic 16f84 PWM circuit scr control light intensity using 8051 8051 microwave oven design of FM transmitter final year project project pic 16f84 pwm "white led" 5mm Text: INDEX Order Code Description _ 102-271 794-740 102-246 794-752 101-930 102-283 101-886 101-953 _ _ 688-137 688-149 _ _ 597-387 705-536 473-728 473-753 473-730 473-741 473-881 _ _ _ 690-648 690-703 690-636 791-180 _ 791-805 _ 101-564 101-540 101-552 101-515	Original	PDF	OPA340PA: ADS7816P: 12-Bit 200KHz OPA2337PA: ADS7822P: INA125UA: OPA680U: OPA547F: rtd pt100 interface to 8051 24V 20A SIEMENS battery charger LM2560 smd 58a transistor 6-pin pic 16f84 PWM circuit scr control light intensity using 8051 8051 microwave oven design of FM transmitter final year project project pic 16f84 pwm "white led" 5mm
Si6552DQ Abstract: Si9529DY Si9928DY si9928 Si952 Text: Si9928DY Dual Enhancement-Mode MOSFET N- and P-Channel Product Summary VDS (V) N-Channel 20 P-Channel –20 rDS(on) (W) ID (A) 0.05 @ VGS = 4.5 V "5.0 0.06 @ VGS = 3.0 V "4.2 0.08 @ VGS = 2.7 V "3.6 0.11 @ VGS = –4.5 V "3.4 0.15 @ VGS = –3.0 V "2.9 0.19 @ VGS = –2.7 V	Original	PDF	Si9928DY Si9529DY Si6552DQ S-47958--Rev. 15-Apr-96 si9928 Si952
Si6552DQ Abstract: Si9529DY Si9928DY Text: Si9928DY Dual Enhancement-Mode MOSFET N- and P-Channel Product Summary VDS (V) N-Channel 20 P-Channel –20 rDS(on) (W) ID (A) 0.05 @ VGS = 4.5 V "5.0 0.06 @ VGS = 3.0 V "4.2 0.08 @ VGS = 2.7 V "3.6 0.11 @ VGS = –4.5 V "3.4 0.15 @ VGS = –3.0 V "2.9 0.19 @ VGS = –2.7 V	Original	PDF	Si9928DY Si9529DY Si6552DQ S-47958--Rev. 15-Apr-96
TEMIC K153P Abstract: TSHF5471 tfmw5380 dn1328 tdsr5156 dn904 TDSR5153 HS0038 IR sensor TLVD4900 TCDF1910 Text: Quality and Reliability Report 1997 TEMIC Semiconductors 07.97 Table of Contents TEMIC Quality Policy .1 Quality System .2	Original	PDF	WN1053 WN1087-18R WN1087-TR1 WN1090 WN1125 WN1142 WN1158-TA WN1165-TR1 WN1170 WN934 TEMIC K153P TSHF5471 tfmw5380 dn1328 tdsr5156 dn904 TDSR5153 HS0038 IR sensor TLVD4900 TCDF1910
Si9928DY Abstract: Si6552DQ Si9529DY Text: Si9928DY Dual Enhancement-Mode MOSFET N- and P-Channel Product Summary VDS (V) N-Channel 20 P-Channel –20 rDS(on) (W) ID (A) 0.05 @ VGS = 4.5 V "5.0 0.06 @ VGS = 3.0 V "4.2 0.08 @ VGS = 2.7 V "3.6 0.11 @ VGS = –4.5 V "3.4 0.15 @ VGS = –3.0 V "2.9 0.19 @ VGS = –2.7 V	Original	PDF	Si9928DY Si9529DY Si6552DQ S-47958--Rev. 15-Apr-96

p-channel Abstract: Si4558DY Text: Tem ic Semiconductors S08 SOT23 TO39 DIP14 LITTLE FOOT continued •. y :'-* r }y if. Part Number Complementary LITTLE FOOT® Devices (SOIC 8) V a s* d t2 .7 V Id (A) GosflgnratioB 0.04 0.074 0.08 0.19 6 5 ±5 ±3.4 ±2.5 ±3 ±3.5 ±3.5 3.5 2.3 ±5.8	OCR Scan	PDF	DIP14 Si9529DY Si9928DY Si9942DY Si9958DY Si9952DY Si4558DY Si4949EY Si9939DY Si4532DY p-channel