SI9433 Search Results

Si9433DY

Contextual Info: Si9433DY Vishay Siliconix P-Channel 20-V D-S MOSFET PRODUCT SUMMARY VDS (V) –20 rDS(on) (W) ID (A) 0.045 @ VGS = –4.5 V "5.4 0.070 @ VGS = –2.7 V "4.2 S S S SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View D D D D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)

Contextual Info: Si9433BDY Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) - 20 ID (A) 0.040 at VGS = - 4.5 V - 6.2 0.060 at VGS = - 2.7 V - 5.0 • Halogen-free According to IEC 61249-2-21 Definition • Compliant to RoHS Directive 2002/95/EC

Si9433BDY

Abstract: Si9433BDY-T1-E3
Contextual Info: Si9433BDY Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.040 at VGS = - 4.5 V - 6.2 0.060 at VGS = - 2.7 V - 5.0 • Halogen-free According to IEC 61249-2-21 Definition • Compliant to RoHS Directive 2002/95/EC

Contextual Info: Si9433BDY Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.040 at VGS = - 4.5 V - 6.2 0.060 at VGS = - 2.7 V - 5.0 • Halogen-free According to IEC 61249-2-21 Definition • Compliant to RoHS Directive 2002/95/EC

Contextual Info: Si9433DY Vishay Siliconix P-Channel 20-V D-S MOSFET PRODUCT SUMMARY VDS (V) –20 rDS(on) (W) ID (A) 0.045 @ VGS = –4.5 V "5.4 0.070 @ VGS = –2.7 V "4.2 S S S SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View D D D D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)

Si6433DQ

Abstract: Si9424DY Si9433DY
Contextual Info: Si9433DY P-Channel Enhancement-Mode MOSFET Product Summary VDS V –20 rDS(on) (W) ID (A) 0.065 @ VGS = –4.5 V "5.4 0.100 @ VGS = –2.7 V "4.2 Recommended upgrade: Si9424DY Lower profile/smaller size—see LITE FOOTR equivalent: Si6433DQ S S S SO-8 S

Si9433BDY

Abstract: 7277-3
Contextual Info: SPICE Device Model Si9433BDY Vishay Siliconix P-Channel 20-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Contextual Info: Si9433BDY Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.040 at VGS = - 4.5 V - 6.2 0.060 at VGS = - 2.7 V - 5.0 • Halogen-free According to IEC 61249-2-21 Definition • Compliant to RoHS Directive 2002/95/EC

Si9433DY

Abstract: Si9433DY SPICE Device Model
Contextual Info: SPICE Device Model Si9433DY Vishay Siliconix P-Channel Enhancement-Mode MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model Subcircuit Model • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

AN609

Abstract: Si9433BDY
Contextual Info: Si9433BDY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

Contextual Info: Si9433DY P-Channel Enhancement-Mode MOSFET Product Summary VDS V –20 20 rDS(on) (W) ID (A) 0.045 @ VGS = –4.5 V "5.4 0.070 @ VGS = –2.7 V "4.2 Recommended upgrade: Si9424DY Lower profile/smaller size see: Si6433DQ S S S SO-8 S 1 8 D S 2 7 D S 3 6 D

Si6433DQ

Abstract: Si9424DY Si9433DY
Contextual Info: Si9433DY P-Channel Enhancement-Mode MOSFET Product Summary VDS V –20 rDS(on) (W) ID (A) 0.065 @ VGS = –4.5 V "5.4 0.100 @ VGS = –2.7 V "4.2 Recommended upgrade: Si9424DY Lower profile/smaller size—see LITE FOOTR equivalent: Si6433DQ S S S SO-8 S

SI9433BDY-E3

Abstract: Si9433BDY
Contextual Info: Si9433BDY Vishay Siliconix New Product P-Channel 20-V D-S MOSFET PRODUCT SUMMARY VDS (V) −20 20 rDS(on) (W) ID (A) 0.040 @ VGS = −4.5 V −6.2 0.060 @ VGS = −2.7 V −5.0 S SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View D Ordering Information: Si9433BDY—E3 (Lead Free)

Contextual Info: Si9433BDY Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.040 at VGS = - 4.5 V - 6.2 0.060 at VGS = - 2.7 V - 5.0 • Halogen-free According to IEC 61249-2-21 Definition • Compliant to RoHS Directive 2002/95/EC

Si9433DY-T1

Abstract: SI9433BDY-T1 DSA0042935 SI9433BDY-E3 Si9433DY Si9433BDY Si9433BDY-T1-E3
Contextual Info: Specification Comparison Vishay Siliconix Si9433BDY vs. Si9433DY Description: P-Channel, - 20 V D-S MOSFET Package: SOIC-8 Pin Out: Identical Part Number Replacements: Si9433BDY Replaces Si9433DY Si9433BDY-E3 (Lead (Pb)-free version) Replaces Si9433DY Si9433BDY-T1 Replaces Si9433DY-T1

SI9433BDY-E3

Abstract: Si9433BDY 40242
Contextual Info: Si9433BDY Vishay Siliconix New Product P-Channel 20-V D-S MOSFET PRODUCT SUMMARY VDS (V) −20 20 rDS(on) (W) ID (A) 0.040 @ VGS = −4.5 V −6.2 0.060 @ VGS = −2.7 V −5.0 S SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View D Ordering Information: Si9433BDY—E3 (Lead Free)

Si9433DY

Contextual Info: Si9433DY Vishay Siliconix P-Channel 20-V D-S MOSFET PRODUCT SUMMARY VDS (V) –20 rDS(on) (W) ID (A) 0.045 @ VGS = –4.5 V "5.4 0.070 @ VGS = –2.7 V "4.2 S S S SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View D D D D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)

SI9433BDY

Contextual Info: SPICE Device Model Si9433BDY Vishay Siliconix P-Channel 20-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

si9433dy

Abstract: Si6433DQ Si9424DY
Contextual Info: Si9433DY P-Channel Enhancement-Mode MOSFET Product Summary VDS V –20 rDS(on) (W) ID (A) 0.045 @ VGS = –4.5 V "5.4 0.070 @ VGS = –2.7 V "4.2 Recommended upgrade: Si9424DY Lower profile/smaller size see: Si6433DQ S S S SO-8 S 1 8 D S 2 7 D S 3 6 D G

Contextual Info: Si9433BDY Vishay Siliconix New Product P-Channel 20-V D-S MOSFET PRODUCT SUMMARY VDS (V) −20 20 rDS(on) (W) ID (A) 0.040 @ VGS = −4.5 V −6.2 0.060 @ VGS = −2.7 V −5.0 S SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View D Ordering Information: Si9433BDY—E3 (Lead Free)

MAX795

Abstract: Si9433DY MAX793 MAX794
Contextual Info: 19-0366; Rev 6; 3/10 3.0V/3.3V Adjustable Microprocessor Supervisory Circuits The MAX793/MAX794/MAX795 microprocessor µP supervisory circuits monitor and control the activities of +3.0V/+3.3V µPs by providing backup-battery switchover, among other features such as low-line indication, µP

AD8551

Abstract: AD8551AR AD8552 AD8552AR AD8554 AD855x squarer
Contextual Info: Zero-Drift, Single-Supply, Rail-to-Rail Input/Output Operational Amplifiers AD8551/AD8552/AD8554 a FEATURES Low Offset Voltage: 1 ␮V Input Offset Drift: 0.005 ␮V/؇C Rail-to-Rail Input and Output Swing +5 V/+2.7 V Single-Supply Operation High Gain, CMRR, PSRR: 130 dB

SMD10P05L

Abstract: 1A 5v input 5v output regulator SMD10P05 Matsuo Tantalum 2N3904 ICL7611 Si9433DY P-channel power mosfet
Contextual Info: DESIGN SHOWCASE P-FET linear regulator has low dropout voltage P-channel MOSFETs P-FETs , though more expensive than pnp transistors, are free of the dissipation loss associated with base drive in a pnp circuit. P-FETs also have a lower saturation voltage

mosfet cross reference

Abstract: Power MOSFET Cross Reference Guide 2SK2146 Cross Reference power MOSFET SUP60NO6-18 MOSFET TOSHIBA 2SK irf510 Motorola SUP70NO6 STP16NEO6 IRF540 substitution
Contextual Info: TMOS Power MOSFET Cross Reference This Cross reference lists MOSFETs by either industry standard part number or by manufacturer's part number for which there is a Motorola nearest or similar replacement. For devices not listed, or for additional information, contact the nearest Motorola Franchised Distributor or your local