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    SI7450 Price and Stock

    Vishay Siliconix SI7450DP-T1-GE3

    MOSFET N-CH 200V 3.2A PPAK SO-8
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    DigiKey SI7450DP-T1-GE3 Cut Tape 6,191 1
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    SI7450DP-T1-GE3 Digi-Reel 6,191 1
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    SI7450DP-T1-GE3 Reel 3,000 3,000
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    Bristol Electronics SI7450DP-T1-GE3 108
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    Quest Components SI7450DP-T1-GE3 86
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    Vishay Siliconix SI7450DP-T1-E3

    MOSFET N-CH 200V 3.2A PPAK SO-8
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    DigiKey SI7450DP-T1-E3 Cut Tape 2,786 1
    • 1 $3.59
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    SI7450DP-T1-E3 Digi-Reel 2,786 1
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    • 1000 $1.2386
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    SI7450DP-T1-E3 Reel 2,500 3,000
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    RS SI7450DP-T1-E3 Bulk 3,000
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    ES Components SI7450DP-T1-E3
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    Vishay Siliconix SI7450DP-T1-RE3

    N-CHANNEL 200-V (D-S) MOSFET
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    DigiKey SI7450DP-T1-RE3 Reel 3,000
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    Vishay Intertechnologies SI7450DP-T1-RE3

    N-CHANNEL 200-V (D-S) MOSFET - Tape and Reel (Alt: SI7450DP-T1-RE3)
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    Avnet Americas SI7450DP-T1-RE3 Reel 18 Weeks 3,000
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    Mouser Electronics SI7450DP-T1-RE3
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    TTI SI7450DP-T1-RE3 Reel 3,000
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    EBV Elektronik SI7450DP-T1-RE3 22 Weeks 3,000
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    Vishay Intertechnologies SI7450DP-T1-GE3

    Trans MOSFET N-CH 200V 3.2A 8-Pin PowerPAK SO T/R - Tape and Reel (Alt: SI7450DP-T1-GE3)
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    Avnet Americas SI7450DP-T1-GE3 Reel 13 Weeks 3,000
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    Mouser Electronics SI7450DP-T1-GE3 9,262
    • 1 $3.21
    • 10 $2.07
    • 100 $1.55
    • 1000 $1.22
    • 10000 $1.18
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    Verical SI7450DP-T1-GE3 3,000 3,000
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    SI7450DP-T1-GE3 1,275 5
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    Arrow Electronics SI7450DP-T1-GE3 3,000 13 Weeks 3,000
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    SI7450DP-T1-GE3 Cut Strips 1,275 13 Weeks 1
    • 1 $0.9827
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    Newark SI7450DP-T1-GE3 Cut Tape 1,384 5
    • 1 $2.92
    • 10 $2.48
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    • 1000 $1.96
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    SI7450DP-T1-GE3 Reel 3,000
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    Bristol Electronics SI7450DP-T1-GE3 2,299
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    SI7450DP-T1-GE3 211
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    Quest Components SI7450DP-T1-GE3 1,839
    • 1 $2.9568
    • 10 $2.9568
    • 100 $2.9568
    • 1000 $1.1088
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    TTI SI7450DP-T1-GE3 Reel 6,000 3,000
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    Avnet Asia SI7450DP-T1-GE3 15 Weeks 3,000
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    Component Electronics, Inc SI7450DP-T1-GE3 15
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    EBV Elektronik SI7450DP-T1-GE3 14 Weeks 3,000
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    SI7450 Datasheets (7)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    Si7450DP Vishay Siliconix N-Channel 200-V (D-S) MOSFET Original PDF
    SI7450DP Vishay Siliconix MOSFETs Original PDF
    SI7450DP Vishay Siliconix N-Channel 200-V (D-S) MOSFET Original PDF
    Si7450DP SPICE Device Model Vishay N-Channel 200-V (D-S) MOSFET Original PDF
    SI7450DP-T1-E3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 200V 3.2A PPAK 8SOIC Original PDF
    SI7450DP-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 200V 3.2A PPAK 8SOIC Original PDF
    SI7450DP-T1-RE3 Vishay Siliconix N-CHANNEL 200-V (D-S) MOSFET Original PDF

    SI7450 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Si7450DP Vishay Siliconix N-Channel 200 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 200 RDS(on) () ID (A) 0.080 at VGS = 10 V 5.3 0.090 at VGS = 6 V 5 • TrenchFET Power MOSFETs • New Low Thermal Resistance PowerPAK® Package with Low 1.07 mm Profile


    Original
    PDF Si7450DP Si7450Delectronic 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: Si7450DP Vishay Siliconix N-Channel 200 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 200 RDS(on) () ID (A) 0.080 at VGS = 10 V 5.3 0.090 at VGS = 6 V 5 • TrenchFET Power MOSFETs • New Low Thermal Resistance PowerPAK® Package with Low 1.07 mm Profile


    Original
    PDF Si7450DP Si7450Delectronic 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Si7450DP

    Abstract: No abstract text available
    Text: Si7450DP New Product Vishay Siliconix N-Channel 200-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 200 rDS(on) (W) ID (A) 0.080 @ VGS = 10 V 5.3 0.090 @ VGS = 6 V 5.0 D TrenchFETr Power MOSFETS D New Low Thermal Resistance PowerPAKt Package with Low 1.07-mm Profile


    Original
    PDF Si7450DP 07-mm S-03475--Rev. 16-Apr-01

    Si7450DP-T1

    Abstract: Si7450DP
    Text: Si7450DP Vishay Siliconix N-Channel 200-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 200 rDS(on) (W) ID (A) 0.080 @ VGS = 10 V 5.3 0.090 @ VGS = 6 V 5.0 D TrenchFETr Power MOSFETS D New Low Thermal Resistance PowerPAKr Package with Low 1.07-mm Profile D PWM Optimized for Fast Switching


    Original
    PDF Si7450DP 07-mm Si7450DP-T1 S-31728--Rev. 18-Aug-03

    Untitled

    Abstract: No abstract text available
    Text: Si7450DP Vishay Siliconix N-Channel 200-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 200 RDS(on) (Ω) ID (A) 0.080 at VGS = 10 V 5.3 0.090 at VGS = 6 V 5.0 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFETs • New Low Thermal Resistance PowerPAK®


    Original
    PDF Si7450DP Si7450DP-T1-E3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Si7450DP

    Abstract: Si7450DP-T1-E3 Si7450DP-T1-GE3
    Text: Si7450DP Vishay Siliconix N-Channel 200-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 200 RDS(on) (Ω) ID (A) 0.080 at VGS = 10 V 5.3 0.090 at VGS = 6 V 5.0 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFETs • New Low Thermal Resistance PowerPAK®


    Original
    PDF Si7450DP Si7450DP-T1-E3 Si7450DP-T1-GE3 11-Mar-11

    Si7450DP

    Abstract: Si7450DP-T1 Si7450DP-T1-E3
    Text: Si7450DP Vishay Siliconix N-Channel 200-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 200 rDS(on) (Ω) ID (A) 0.080 @ VGS = 10 V 5.3 0.090 @ VGS = 6 V 5.0 • TrenchFET Power MOSFETS • New Low Thermal Resistance PowerPAK® Package with Low 1.07-mm Profile


    Original
    PDF Si7450DP 07-mm Si7450DP-T1 Si7450DP-T1--E3 08-Apr-05 Si7450DP-T1-E3

    Si7450DP

    Abstract: No abstract text available
    Text: \\\ SPICE Device Model Si7450DP Vishay Siliconix N-Channel 200-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original
    PDF Si7450DP 0-to-10V 03-May-02

    AN609

    Abstract: Si7450DP
    Text: Si7450DP_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original
    PDF Si7450DP AN609 28-Nov-05

    Untitled

    Abstract: No abstract text available
    Text: Si7450DP Vishay Siliconix N-Channel 200-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 200 rDS(on) (W) ID (A) 0.080 @ VGS = 10 V 5.3 0.090 @ VGS = 6 V 5.0 D TrenchFETr Power MOSFETS D New Low Thermal Resistance PowerPAKr Package with Low 1.07-mm Profile D PWM Optimized for Fast Switching


    Original
    PDF Si7450DP 07-mm Si7450DP-T1 S-31728--Rev. 18-Aug-03

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model Si7450DP www.vishay.com Vishay Siliconix N-Channel 200 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original
    PDF Si7450DP 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: Si7450DP Vishay Siliconix N-Channel 200-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 200 RDS(on) (Ω) ID (A) 0.080 at VGS = 10 V 5.3 0.090 at VGS = 6 V 5.0 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFETs • New Low Thermal Resistance PowerPAK®


    Original
    PDF Si7450DP Si7450DP-T1-E3 Si7450DP-T1-GE3 11-Mar-11

    Si7450DP

    Abstract: No abstract text available
    Text: SPICE Device Model Si7450DP Vishay Siliconix N-Channel 200-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original
    PDF Si7450DP S-60145Rev. 13-Feb-06

    Si7450DP

    Abstract: No abstract text available
    Text: SPICE Device Model Si7450DP Vishay Siliconix N-Channel 200-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original
    PDF Si7450DP 18-Jul-08

    Si7450DP

    Abstract: Si7450DP-T1-E3 Si7450DP-T1-GE3
    Text: Si7450DP Vishay Siliconix N-Channel 200-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 200 RDS(on) (Ω) ID (A) 0.080 at VGS = 10 V 5.3 0.090 at VGS = 6 V 5.0 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFETs • New Low Thermal Resistance PowerPAK®


    Original
    PDF Si7450DP Si7450DP-T1-E3 Si7450DP-T1-GE3 18-Jul-08

    Untitled

    Abstract: No abstract text available
    Text: Si7450DP Vishay Siliconix N-Channel 200-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 200 rDS(on) (Ω) ID (A) 0.080 @ VGS = 10 V 5.3 0.090 @ VGS = 6 V 5.0 • TrenchFET Power MOSFETS • New Low Thermal Resistance PowerPAK® Package with Low 1.07-mm Profile


    Original
    PDF Si7450DP 07-mm Si7450DP-T1 Si7450DP-T1--E3 18-Jul-08

    SI7450DP

    Abstract: No abstract text available
    Text: Si7450DP Vishay Siliconix N-Channel 200-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 200 rDS(on) (Ω) ID (A) 0.080 @ VGS = 10 V 5.3 0.090 @ VGS = 6 V 5.0 • TrenchFET Power MOSFETS • New Low Thermal Resistance PowerPAK® Package with Low 1.07-mm Profile


    Original
    PDF Si7450DP 07-mm Si7450DP-T1 Si7450DP-T1--E3 S-51773-Rev. 31-Oct-05

    Untitled

    Abstract: No abstract text available
    Text: LTC3706 Secondary-Side Synchronous Forward Controller with PolyPhase Capability DESCRIPTION FEATURES n n n n n n n n n n n n The LTC 3706 is a PolyPhase capable secondary-side controller for synchronous forward converters. When used in conjunction with the LTC3705 gate driver and primaryside controller, the part creates a complete isolated power


    Original
    PDF LTC3706 LTC3705 Cur/LTC1871-1 LTC1871-7 MSOP-10 LTC3803/LTC3803-3 LTC3803-5 200kHz 300kHz LT3575

    25CTQ45

    Abstract: FET Drivers MAX5068 MAX5069
    Text: 19-3175; Rev 1; 7/04 High-Frequency, Current-Mode PWM Controller with Accurate Oscillator and Dual FET Drivers The MAX5069 is a high-frequency, current-mode, pulse-width modulation PWM controller (with dual MOSFET drivers) that integrates all the building blocks


    Original
    PDF MAX5069 MAX5069 25CTQ45 FET Drivers MAX5068

    Untitled

    Abstract: No abstract text available
    Text: LTC3810-5 60V Current Mode Synchronous Switching Regulator Controller DESCRIPTION FEATURES n n n n n n n n n n n n n n n n High Voltage Operation: Up to 60V Large 1Ω Gate Drivers No Current Sense Resistor Required Dual N-Channel MOSFET Synchronous Drive Extremely Fast Transient Response


    Original
    PDF LTC3810-5 100ns 3810-onous 100kHz 600kHz, 93VIN, SSOP-16, SSOP-28 LT3845A

    PA0815

    Abstract: UPS Telecom IT HAT2165H FCX491A FDC2512 LTC3706 LTC3725 PA1294 Si7450DP ltc3705 transformer
    Text: advertisement Isolated Converters Have Buck Simplicity and Performance Design Note 377 Kurk Mathews timing and optoisolator feedback to control the output secondary . The circuit shown in Figure 1 offers a more direct approach using fewer components. The LTC3706


    Original
    PDF LTC3706 LTC3725 LTC3725 LTC3706 dn377f PA0815 UPS Telecom IT HAT2165H FCX491A FDC2512 PA1294 Si7450DP ltc3705 transformer

    LTC3810H-5

    Abstract: gate drivers ic LTC3810-5 LTC3810E-5 LTC3810I-5 MBR1100 Si7450DP ZXMN10A07F LTC3810HUH-5 LTC3810
    Text: LTC3810-5 60V Current Mode Synchronous Switching Regulator Controller Description Features High Voltage Operation: Up to 60V n Large 1Ω Gate Drivers n No Current Sense Resistor Required n Dual N-Channel MOSFET Synchronous Drive n Extremely Fast Transient Response


    Original
    PDF LTC3810-5 100ns TSSOP-16E LTC3703 100kHz 600kHz, 93VIN, SSOP-16, SSOP-28 LT3845A LTC3810H-5 gate drivers ic LTC3810-5 LTC3810E-5 LTC3810I-5 MBR1100 Si7450DP ZXMN10A07F LTC3810HUH-5 LTC3810

    DRV_B

    Abstract: LTC3723-2 opto coupler 817 LTC3723-1 pa1294.650 marking d26 diode SCHOTTKY half bridge self oscillating transformer LTC3722-2 voltage marking c32 push-pull zvs
    Text: Final Electrical Specifications LTC3723-1/LTC3723-2 Synchronous Push-Pull PWM Controllers October 2003 U DESCRIPTIO FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ The LTC 3723-1/LTC3723-2 synchronous push-pull PWM controllers provide all of the control and protection functions necessary for compact and highly efficient, isolated


    Original
    PDF LTC3723-1/LTC3723-2 3723-1/LTC3723-2 Mode1431 LT1681/LT3781 LTC1693-1 LTC3722-1/LTC3722-2 LT3804 372312i DRV_B LTC3723-2 opto coupler 817 LTC3723-1 pa1294.650 marking d26 diode SCHOTTKY half bridge self oscillating transformer LTC3722-2 voltage marking c32 push-pull zvs

    71917

    Abstract: level logic mosfet transistor so-8 offline switchmode si9110 siliconix an607 AN607 AN707 SI4406DY PowerPAK SO-8 si2301ds
    Text: AN607 Vishay Siliconix DC-to-DC Design Guide Serge Jaunay, Jess Brown INTRODUCTION Manufacturers of electronic systems that require power conversion are faced with the need for higher-density dc-to-dc converters that perform more efficiently, within a smaller


    Original
    PDF AN607 Si9137 SSOP-28 Si9910 Si9912 Si9913 10-Oct-02 71917 level logic mosfet transistor so-8 offline switchmode si9110 siliconix an607 AN607 AN707 SI4406DY PowerPAK SO-8 si2301ds