SI4425BDY-T1-E3 SO8 Search Results

SI4425BDY-T1-E3 SO8 Result Highlights (5)

Part	ECAD Model	Manufacturer	Description	Download	Buy
DP83630SQX/NOPB		Texas Instruments	IEEE 1588 precision time protocol PHYTER™ Ethernet physical layer transceiver 48-WQFN -40 to 85
DP83620SQE/NOPB		Texas Instruments	Industrial temperature, single port 10/100 Mbps Ethernet PHY transceiver with fiber support 48-WQFN -40 to 85
DS100BR111ASQE/NOPB		Texas Instruments	DS100BR111A Ultra Low Power 10.3 Gbps 2-Channel Repeater with Input Equalization 24-WQFN -40 to 85
TLK106LRHBR		Texas Instruments	TLK105L, TLK106L Industrial Temp, Single Port 10/100Mbs Ethernet Physical Layer 32-VQFN -40 to 105
TUSB1210BRHBTQ1		Texas Instruments	Automotive USB2.0 high-speed 480-Mbps ULPI PHY transceiver 32-VQFN -40 to 85

SI4425BDY-T1-E3 SO8 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
SI4425DDY Abstract: SI4425DDY-T1-GE3 SI4425BDY SI4425BDY-T1-GE3 SI4425BDY-T1-E3 SO8 65188 SI4425BDY-T1-E3 Contextual Info: Specification Comparison Vishay Siliconix Si4425DDY vs. Si4425BDY Description: Package: Pin Out: P-Channel, 30-V D-S MOSFET SO-8 Identical Part Number Replacements: Si4425DDY-T1-GE3 replaces Si4425BDY-T1-E3 Si4425DDY-T1-GE3 replaces Si4425BDY-T1-GE3 ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted	Original	Si4425DDY Si4425BDY Si4425DDY-T1-GE3 Si4425BDY-T1-E3 Si4425BDY-T1-GE3 Cond019 15-Jul-09 SI4425BDY-T1-E3 SO8 65188	PDF
Si4425BDY Abstract: Si4425BDY-T1 Contextual Info: Si4425BDY Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES D TrenchFETr Power MOSFET D Advanced High Cell Density Process PRODUCT SUMMARY VDS (V) −30 rDS(on) (W) ID (A) 0.012 @ VGS = −10 V −11.4 APPLICATIONS 0.019 @ VGS = −4.5 V −9.1 D Load Switches	Original	Si4425BDY Si4425BDY--T1 Si4425BDY--E3 Si4425BDY-T1--E3 08-Apr-05 Si4425BDY-T1	PDF
Contextual Info: Si4425BDY Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES D TrenchFETr Power MOSFET D Advanced High Cell Density Process PRODUCT SUMMARY VDS (V) −30 rDS(on) (W) ID (A) 0.012 @ VGS = −10 V −11.4 APPLICATIONS 0.019 @ VGS = −4.5 V −9.1 D Load Switches	Original	Si4425BDY Si4425BDY--T1 Si4425BDY--E3 Si4425BDY-T1--E3 18-Jul-08	PDF
Contextual Info: Si4425BDY Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES D TrenchFETr Power MOSFET D Advanced High Cell Density Process PRODUCT SUMMARY VDS (V) −30 rDS(on) (W) ID (A) 0.012 @ VGS = −10 V −11.4 APPLICATIONS 0.019 @ VGS = −4.5 V −9.1 D Load Switches	Original	Si4425BDY Si4425BDY--T1 Si4425BDY--E3 Si4425BDY-T1--E3 S-50366--Rev. 28-Feb-05	PDF
irfb4115 Abstract: BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor Contextual Info: 573 Technical portal and online community for Design Engineers - www.element-14.com Discrete & Power Devices Page 700 Bridge Rectifiers . . . . . . . . . . . . . . . . . . . . . . . . Diodes Schottky . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .	Original	element-14 F155-6A F155-10A F165-15A F175-25A irfb4115 BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor	PDF