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    SI4410BDY SPICE DEVICE MODEL Search Results

    SI4410BDY SPICE DEVICE MODEL Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPD2017FN Toshiba Electronic Devices & Storage Corporation Intelligent power device (Low side switch) / VDD=6 V / 8ch / SSOP30 Visit Toshiba Electronic Devices & Storage Corporation
    TPD2015FN Toshiba Electronic Devices & Storage Corporation Intelligent power device (High side switch) / VDD=40 V / 8ch / SSOP30 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4164F Toshiba Electronic Devices & Storage Corporation Intelligent power device (High voltage PWM DC brushless motor driver) / VBB=600 V / Iout=2 A / HSSOP31 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4207F Toshiba Electronic Devices & Storage Corporation Intelligent power device (High voltage PWM DC brushless motor driver) / VBB=600 V / Iout=5 A / SSOP30 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4204F Toshiba Electronic Devices & Storage Corporation Intelligent power device (High voltage PWM DC brushless motor driver) / VBB=600 V / Iout=2.5 A / SSOP30 Visit Toshiba Electronic Devices & Storage Corporation

    SI4410BDY SPICE DEVICE MODEL Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    Si4410BDY SPICE Device Model Vishay N-Channel 30-V (D-S) MOSFET Original PDF

    SI4410BDY SPICE DEVICE MODEL Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    72284

    Abstract: Si4410BDY Si4410BDY SPICE Device Model
    Text: SPICE Device Model Si4410BDY Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Model Subcircuit) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		Si4410BDY 0-to-10V 15-May-03 72284 Si4410BDY SPICE Device Model PDF

    72284

    Abstract: Si4410BDY
    Text: SPICE Device Model Si4410BDY Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		Si4410BDY 18-Jul-08 72284 PDF