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Vishay Siliconix SI4403CDY-T1-GE3 MOSFET P-CH 20V 13.4A 8SO
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SI4403CDY-T1-GE3	Digi-Reel	5,459		1	1 $1.17 10 $0.734 100 $1.17 1000 $0.3395 10000 $0.3395	Buy Now
	SI4403CDY-T1-GE3	Cut Tape	5,459		1	1 $1.17 10 $0.734 100 $1.17 1000 $0.3395 10000 $0.3395	Buy Now
	SI4403CDY-T1-GE3	Reel	2,500		2,500	1 - 10 - 100 - 1000 - 10000 $0.30177	Buy Now
New Advantage Corporation	SI4403CDY-T1-GE3		5,000		1	1 - 10 - 100 - 1000 - 10000 $0.264	Buy Now
Vishay Intertechnologies SI4403CDY-T1-GE3 Trans MOSFET P-CH 20V 9.4A 8-Pin SO T/R - Tape and Reel (Alt: SI4403CDY-T1-GE3)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	SI4403CDY-T1-GE3	Reel	2,500	17 Weeks	2,500	1 - 10 - 100 - 1000 - 10000 $0.237	Buy Now
	SI4403CDY-T1-GE3	Reel		17 Weeks	2,500	1 - 10 - 100 - 1000 - 10000 $0.24213	Buy Now
Mouser Electronics	SI4403CDY-T1-GE3		47,339			1 $0.91 10 $0.615 100 $0.426 1000 $0.312 10000 $0.25	Buy Now
Verical	SI4403CDY-T1-GE3		5,000		2,500	1 - 10 - 100 - 1000 - 10000 $0.24	Buy Now
	SI4403CDY-T1-GE3		2,500		2,500	1 - 10 - 100 - 1000 - 10000 $0.2698	Buy Now
Arrow Electronics	SI4403CDY-T1-GE3		5,000	17 Weeks	2,500	1 - 10 - 100 - 1000 - 10000 $0.24	Buy Now
	SI4403CDY-T1-GE3		2,500	17 Weeks	2,500	1 - 10 - 100 - 1000 - 10000 $0.2671	Buy Now
Newark	SI4403CDY-T1-GE3	Cut Tape	28,890		5	1 $0.826 10 $0.722 100 $0.521 1000 $0.521 10000 $0.521	Buy Now
	SI4403CDY-T1-GE3	Reel			2,500	1 $0.352 10 $0.352 100 $0.352 1000 $0.352 10000 $0.318	Buy Now

Bristol Electronics	SI4403CDY-T1-GE3		10,040			1 - 10 - 100 - 1000 - 10000 -	Get Quote
TTI	SI4403CDY-T1-GE3	Reel	30,000		2,500	1 - 10 - 100 - 1000 - 10000 $0.241	Buy Now
TME	SI4403CDY-T1-GE3		2,139		1	1 $0.683 10 $0.515 100 $0.441 1000 $0.399 10000 $0.378	Buy Now
ComSIT USA	SI4403CDY-T1-GE3		2,122			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Avnet Asia	SI4403CDY-T1-GE3			19 Weeks	2,500	1 - 10 - 100 - 1000 - 10000 $0.30521	Buy Now
EBV Elektronik	SI4403CDY-T1-GE3			18 Weeks	2,500	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Vishay Intertechnologies SI4403CDY-T1-GE3. Channel Type:P Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:13.4A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:4.5V; Gate Source Threshold Voltage Max:400Mv; Power Dissipation:5W; No. Of Pins:8Pins Rohs Compliant: No \|Vishay SI4403CDY-T1-GE3.
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Newark	SI4403CDY-T1-GE3.	Reel			2,500	1 $0.237 10 $0.237 100 $0.237 1000 $0.237 10000 $0.237	Buy Now
Others SI4403CDYT1GE3 AVAILABLE EU
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
ComSIT USA	SI4403CDYT1GE3		72,000			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Vishay Intertechnologies SI4403CDY P-CHANNEL 1.8 V (G-S) MOSFET Small Signal Field-Effect Transistor, 13.4A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
ComSIT USA	SI4403CDY		93			1 - 10 - 100 - 1000 - 10000 -	Get Quote

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SI4403C Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
SI4403CDY-T1-GE3		Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 20V 13.4A 8SOIC		Original	PDF

SI4403C Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
67341 Abstract: si4403C si4403 Text: New Product Si4403CDY Vishay Siliconix P-Channel 1.8 V G-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)d 0.0155 at VGS = - 4.5 V - 13.4 VDS (V) - 20 0.0195 at VGS = - 2.5 V - 12 0.0250 at VGS = - 1.8 V - 10.5 • Halogen-free According to IEC 61249-2-21	Original	PDF	Si4403CDY 2002/95/EC Si4403CDY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 67341 si4403C si4403
Untitled Abstract: No abstract text available Text: New Product Si4403CDY Vishay Siliconix P-Channel 1.8 V G-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)d 0.0155 at VGS = - 4.5 V - 13.4 VDS (V) - 20 0.0195 at VGS = - 2.5 V - 12 0.0250 at VGS = - 1.8 V - 10.5 • Halogen-free According to IEC 61249-2-21	Original	PDF	Si4403CDY 2002/95/EC Si4403CDY-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12
67341 Abstract: No abstract text available Text: New Product Si4403CDY Vishay Siliconix P-Channel 1.8 V G-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)d 0.0155 at VGS = - 4.5 V - 13.4 VDS (V) - 20 0.0195 at VGS = - 2.5 V - 12 0.0250 at VGS = - 1.8 V - 10.5 • Halogen-free According to IEC 61249-2-21	Original	PDF	Si4403CDY 2002/95/EC Si4403CDY-T1-GE3 11-Mar-11 67341
Untitled Abstract: No abstract text available Text: SPICE Device Model Si4403CDY Vishay Siliconix P-Channel 1.8 V G-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C	Original	PDF	Si4403CDY 18-Jul-08
MOSFET SO-8 Abstract: No abstract text available Text: Specification Comparison Vishay Siliconix Si4403CDY vs. Si4403BDY Description: Package: Pin Out: P-Channel, 20 V D-S MOSFET SO-8 Identical Part Number Replacements: Si4403CDY-T1-GE3 replaces Si4403BDY-T1-GE3 Si4403CDY-T1-GE3 replaces Si4403BDY-T1-E3 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)	Original	PDF	Si4403CDY Si4403BDY Si4403CDY-T1-GE3 Si4403BDY-T1-GE3 Si4403BDY-T1-E3 23-Mar-11 MOSFET SO-8
25783 Abstract: 2578-3 51540 676-42 Text: Si4403CDY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,	Original	PDF	Si4403CDY AN609, 2462m 6127m 2152m 9573u 2530m 9287m 7235m 25783 2578-3 51540 676-42
Untitled Abstract: No abstract text available Text: New Product Si4403CDY Vishay Siliconix P-Channel 1.8 V G-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)d 0.0155 at VGS = - 4.5 V - 13.4 VDS (V) - 20 0.0195 at VGS = - 2.5 V - 12 0.0250 at VGS = - 1.8 V - 10.5 • Halogen-free According to IEC 61249-2-21	Original	PDF	Si4403CDY 2002/95/EC Si4403CDY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12
Untitled Abstract: No abstract text available Text: SPICE Device Model Si4403CDY www.vishay.com Vishay Siliconix P-Channel 1.8 V G-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C	Original	PDF	Si4403CDY 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12
si7121 Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836 Text: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®	Original	PDF	Mediu33-4-9337-2727 VMN-SG2127-1210 si7121 Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836

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SI4403C Price and Stock

Vishay Siliconix SI4403CDY-T1-GE3

Vishay Intertechnologies SI4403CDY-T1-GE3

Vishay Intertechnologies SI4403CDY-T1-GE3.

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Vishay Intertechnologies SI4403CDY

SI4403C Datasheets (1)

SI4403C Datasheets Context Search

67341

Untitled

67341

Untitled

MOSFET SO-8

25783

Untitled

Untitled

si7121