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Vishay Siliconix SI3455ADV-T1-E3 MOSFET P-CH 30V 2.7A 6TSOP
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DigiKey	SI3455ADV-T1-E3	Reel				1 - 10 - 100 - 1000 - 10000 -	Buy Now
	SI3455ADV-T1-E3	Digi-Reel			1	1 $0.53 10 $0.53 100 $0.53 1000 $0.53 10000 $0.53	Buy Now
	SI3455ADV-T1-E3	Cut Tape				1 - 10 - 100 - 1000 - 10000 -	Buy Now
RS	SI3455ADV-T1-E3	Bulk			3,000	1 - 10 - 100 - 1000 - 10000 $0.487	Get Quote
Vishay Siliconix SI3455ADV-T1-GE3 MOSFET P-CH 30V 2.7A 6TSOP
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DigiKey	SI3455ADV-T1-GE3	Reel				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Vishay Siliconix SI3455DV-T1
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Bristol Electronics	SI3455DV-T1		330			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Fairchild Semiconductor Corporation SI3455DV
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Bristol Electronics	SI3455DV		91			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Quest Components	SI3455DV		64			1 $0.3048 10 $0.3048 100 $0.254 1000 $0.254 10000 $0.254	Buy Now
Rochester Electronics	SI3455DV		158		1	1 $0.1517 10 $0.1517 100 $0.1426 1000 $0.1289 10000 $0.1289	Buy Now
Others SI3455DVT1 AVAILABLE EU
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ComSIT USA	SI3455DVT1		2,800			1 - 10 - 100 - 1000 - 10000 -	Get Quote

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SI3455 Datasheets (15)

Part	Manufacturer	Description	Datasheet Type	PDF
Si3455ADV	Vishay Intertechnology	P-Channel 30-V (D-S) MOSFET	Original	PDF
Si3455ADV	Vishay Siliconix	P-Channel 30-V (D-S) MOSFET	Original	PDF
Si3455ADV SPICE Device Model	Vishay	P-Channel 30-V (D-S) MOSFET	Original	PDF
SI3455ADV-T1	Vishay Intertechnology	P-Channel 30-V (D-S) MOSFET	Original	PDF
SI3455ADV-T1	Vishay Siliconix	P-Channel 30-V (D-S) MOSFET	Original	PDF
SI3455ADV-T1-E3	Vishay Siliconix	P-Channel 30-V (D-S) MOSFET	Original	PDF
SI3455ADV-T1-E3	Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 30V 2.7A 6-TSOP	Original	PDF
SI3455ADV-T1-GE3	Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 30V 2.7A 6TSOP	Original	PDF
SI3455DV	Fairchild Semiconductor	Single P-Channel Logic Level PowerTrench MOSFET	Original	PDF
Si3455DV	Toshiba	Power MOSFETs Cross Reference Guide	Original	PDF
Si3455DV	Vishay Intertechnology	P-Channel 30-V (D-S) MOSFET	Original	PDF
SI3455DV	Vishay Siliconix	P-Channel 30-V (D-S) MOSFET	Original	PDF
SI3455DV	Vishay Siliconix	P-Channel 30-V (D-S) MOSFET	Original	PDF
Si3455DV SPICE Device Model	Vishay	P-Channel 30-V (D-S) MOSFET	Original	PDF

SI3455DV-T1	Vishay Intertechnology	P-Channel 30-V (D-S) MOSFET	Original	PDF

SI3455 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: Si3455DV Single P-Channel Logic Level PowerTrench MOSFET General Description Features This P-Channel Logic Level MOSFET is produced using Fairchild’s advanced PowerTrench process. It has been optimized for battery power management applications. • –3.6 A, –30 V.	Original	PDF	Si3455DV
Si3441DV Abstract: TSOP6 Text: TSOP-6 The Next Step for LITTLE FOOTR Selector Guide Maximum Ratings rDS on (W) Part Number VDS (V) VGS = 10 V VGS = 4.5 V Si3454DV/X 30 0.065 Si3455DV/X 30 0.10 Si3442DV/X 20 0.07 Si3441DV/X 20 0.10 VGS = 2.5 V ID (A) ( ) Configuration Available 0.095 "4.2	Original	PDF	Si3454DV/X Si3455DV/X Si3442DV/X Si3441DV/X Si3441DV TSOP6
SI3455DV-T1 Abstract: Si3455DV Text: Si3455DV Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −30 30 rDS(on) (W) ID (A) 0.100 @ VGS = −10 V "3.5 0.190 @ VGS = −4.5 V "2.5 D TrenchFETr Power MOSFET D Lead (Pb)-Free Version is RoHS Compliant Available (4) S TSOP-6	Original	PDF	Si3455DV Si3455DV-T1 Si3455DV-T1--E3 18-Jul-08
Si3455DV Abstract: No abstract text available Text: Si3455DV P-Channel 30-V D-S Rated MOSFET Product Summary VDS (V) –30 rDS(on) (W) ID (A) 0.100 @ VGS = –10 V "3.5 0.190 @ VGS = –4.5 V "2.5 (4) S TSOP-6 Top View 1 Power Dissipation 6 (3) G 3 mm 2 5 3 4 Si3455DV—2.0 W (1, 2, 5, 6) D 2.85 mm P-Channel MOSFET	Original	PDF	Si3455DV Si3455DV--2 S-49525--Rev. 06-Oct-97
Untitled Abstract: No abstract text available Text: Si3455ADV Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) (Ω) ID (A) 0.100 at VGS = - 10 V - 3.5 0.170 at VGS = - 4.5 V - 2.7 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs	Original	PDF	Si3455ADV 2002/95/EC Si3455ADV-T1-E3 Si3455ADV-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12
Untitled Abstract: No abstract text available Text: Si3455DV Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −30 30 rDS(on) (W) ID (A) 0.100 @ VGS = −10 V "3.5 0.190 @ VGS = −4.5 V "2.5 D TrenchFETr Power MOSFET D Lead (Pb)-Free Version is RoHS Compliant Available (4) S TSOP-6	Original	PDF	Si3455DV Si3455DV-T1 Si3455DV-T1--E3 S-50694--Rev. 18-Apr-05
Si3455DV Abstract: No abstract text available Text: Si3455DV P-Channel Enhancement-Mode MOSFET Product Summary VDS V –30 rDS(on) (W) ID (A) 0.100 @ VGS = –10 V "3.5 0.190 @ VGS = –4.5 V "2.5 (4) S TSOP-6 Top View 1 Power Dissipation 6 (3) G 3 mm 2 5 3 4 Si3455DV—2.0 W (1, 2, 5, 6) D 2.75 mm P-Channel MOSFET	Original	PDF	Si3455DV Si3455DV--2 S-41818--Rev. 29-Aug
Si3455DV Abstract: No abstract text available Text: Si3455DV Single P-Channel Logic Level PowerTrench MOSFET General Description Features This P-Channel Logic Level MOSFET is produced using Fairchild’s advanced PowerTrench process. It has been optimized for battery power management applications. • –3.6 A, –30 V.	Original	PDF	Si3455DV
Si3455DV Abstract: No abstract text available Text: SPICE Device Model Si3455DV Vishay Siliconix P-Channel 30-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range	Original	PDF	Si3455DV S-50383Rev. 21-Mar-05
Si3455ADV Abstract: No abstract text available Text: SPICE Device Model Si3455ADV Vishay Siliconix P-Channel 30-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range	Original	PDF	Si3455ADV S-50383Rev. 21-Mar-05
Si3455DV Abstract: No abstract text available Text: Si3455DV P-Channel Enhancement-Mode MOSFET Product Summary VDS V –30 rDS(on) (W) ID (A) 0.100 @ VGS = –10 V "3.5 0.190 @ VGS = –4.5 V "2.5 (4) S TSOP-6 Top View 1 Power Dissipation 6 (3) G 3 mm 2 5 3 4 Si3455DV—2.0 W (1, 2, 5, 6) D 2.75 mm P-Channel MOSFET	Original	PDF	Si3455DV Si3455DV--2 S-41818--Rev. 29-Aug
Untitled Abstract: No abstract text available Text: Si3455ADV Vishay Siliconix P-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) −30 rDS(on) (W) ID (A) 0.100 @ VGS = −10 V −3.5 0.170 @ VGS = −4.5 V −2.7 TSOP-6 Top View 3 mm 1 6 2 5 (4) S (3) G 3 4 2.85 mm Ordering Information: Si3455ADV-T1 Si3455ADV-T1—E3 (Lead Free)	Original	PDF	Si3455ADV Si3455ADV-T1 Si3455ADV-T1--E3 18-Jul-08
Si3455ADV Abstract: Si3455ADV-T1 Text: Si3455ADV Vishay Siliconix P-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) −30 rDS(on) (W) ID (A) 0.100 @ VGS = −10 V −3.5 0.170 @ VGS = −4.5 V −2.7 TSOP-6 Top View 3 mm 1 6 2 5 (4) S (3) G 3 4 2.85 mm Ordering Information: Si3455ADV-T1 Si3455ADV-T1—E3 (Lead Free)	Original	PDF	Si3455ADV Si3455ADV-T1 Si3455ADV-T1--E3 S-40424--Rev. 15-Mar-04
Si3455DV Abstract: No abstract text available Text: SPICE Device Model Si3455DV Vishay Siliconix P-Channel 30-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range	Original	PDF	Si3455DV 10-Oct-01

Untitled Abstract: No abstract text available Text: Si3455ADV Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) (Ω) ID (A) 0.100 at VGS = - 10 V - 3.5 0.170 at VGS = - 4.5 V - 2.7 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs	Original	PDF	Si3455ADV 2002/96/EC Si3455ADV-T1-E3 Si3455ADV-T1-GE3 18-Jul-08
Si3455DV Abstract: No abstract text available Text: Si3455DV P-Channel Enhancement-Mode MOSFET Product Summary VDS V –30 rDS(on) (W) ID (A) 0.100 @ VGS = –10 V "3.5 0.190 @ VGS = –4.5 V "2.5 (4) S TSOP-6 Top View 1 Power Dissipation 6 (3) G 3 mm 2 5 3 4 Si3455DV—2.0 W (1, 2, 5, 6) D 2.75 mm P-Channel MOSFET	Original	PDF	Si3455DV Si3455DV--2 S-41818--Rev. 29-Aug
Untitled Abstract: No abstract text available Text: Si3455ADV Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) (Ω) ID (A) 0.100 at VGS = - 10 V - 3.5 0.170 at VGS = - 4.5 V - 2.7 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs	Original	PDF	Si3455ADV 2002/95/EC Si3455ADV-T1-E3 Si3455ADV-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12
Si3455DV Abstract: mosfet 23 Tsop-6 Text: Si3455DV Vishay Siliconix P-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) –30 RDS(ON) (W) ID (A) 0.100 @ VGS = –10 V "3.5 0.190 @ VGS = –4.5 V "2.5 (4) S TSOP-6 Top View 1 6 (3) G 3 mm 2 5 3 4 (1, 2, 5, 6) D 2.85 mm P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)	Original	PDF	Si3455DV S-56944--Rev. 23-Nov-98 mosfet 23 Tsop-6
p-channel 7121 Abstract: Supersot 6 Si3455DV SI3455DV MARKING Text: Si3455DV Single P-Channel Logic Level PowerTrench MOSFET General Description Features This P-Channel Logic Level MOSFET is produced using Fairchild’s advanced PowerTrench process. It has been optimized for battery power management applications. • –3.6 A, –30 V.	Original	PDF	Si3455DV p-channel 7121 Supersot 6 SI3455DV MARKING
Si3455ADV Abstract: V53A Text: SPICE Device Model Si3455ADV Vishay Siliconix P-Channel 30-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range	Original	PDF	Si3455ADV 18-Jul-08 V53A
4431 mosfet Abstract: 0795 4413 7420 AN609 Si3455ADV 73808 Text: Si3455ADV_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].	Original	PDF	Si3455ADV AN609 01-Mar-06 4431 mosfet 0795 4413 7420 73808
Si3455ADV Abstract: Si3455ADV-T1 Text: Si3455ADV Vishay Siliconix P-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) −30 rDS(on) (W) ID (A) 0.100 @ VGS = −10 V −3.5 0.170 @ VGS = −4.5 V −2.7 TSOP-6 Top View 3 mm 1 6 2 5 (4) S (3) G 3 4 2.85 mm Ordering Information: Si3455ADV-T1 Si3455ADV-T1—E3 (Lead Free)	Original	PDF	Si3455ADV Si3455ADV-T1 Si3455ADV-T1--E3 08-Apr-05
Si3455ADV Abstract: No abstract text available Text: Si3455ADV New Product Vishay Siliconix P-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.100 @ VGS = –10 V "3.5 0.170 @ VGS = –4.5 V "2.7 –30 (4) S TSOP-6 Top View 1 6 (3) G 3 mm 2 5 3 4 (1, 2, 5, 6) D 2.85 mm P-Channel MOSFET	Original	PDF	Si3455ADV S-99350--Rev. 22-Nov-99
Si3455ADV Abstract: No abstract text available Text: Si3455ADV Vishay Siliconix P-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.100 @ VGS = - 10 V - 3.5 0.170 @ VGS = - 4.5 V - 2.7 - 30 (4) S TSOP-6 Top View 1 6 (3) G 3 mm 2 5 3 4 (1, 2, 5, 6) D 2.85 mm P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)	Original	PDF	Si3455ADV S-03660--Rev. 07-Apr-03

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Vishay Siliconix SI3455ADV-T1-E3

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SI3455 Datasheets (15)

SI3455 Datasheets Context Search

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Si3441DV

SI3455DV-T1

Si3455DV

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Si3455DV

Si3455DV

Si3455DV

Si3455ADV

Si3455DV

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Si3455ADV

Si3455DV

Untitled

Si3455DV

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Si3455DV

p-channel 7121

Si3455ADV

4431 mosfet

Si3455ADV

Si3455ADV

Si3455ADV