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Rochester Electronics LLC SI3443DV MOSFET P-CH 20V 4.4A MICRO6
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Infineon Technologies AG SI3443DV MOSFET P-CH 20V 4.4A MICRO6
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DigiKey	SI3443DV	Bulk			3,000	1 - 10 - 100 - 1000 - 10000 $0.38041	Buy Now
onsemi SI3443DV MOSFET P-CH 20V 4A SUPERSOT6
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DigiKey	SI3443DV	Reel				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Verical	SI3443DV		6,142		2,149	1 - 10 - 100 - 1000 - 10000 $0.1745	Buy Now
Rochester Electronics	SI3443DV		7,834		1	1 $0.1642 10 $0.1642 100 $0.1543 1000 $0.1396 10000 $0.1396	Buy Now
Chip1Stop	SI3443DV	Cut Tape	1			1 $0.486 10 $0.486 100 $0.486 1000 $0.486 10000 $0.486	Buy Now
Infineon Technologies AG SI3443DVTR MOSFET P-CH 20V 4.4A MICRO6
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DigiKey	SI3443DVTR	Cut Tape				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Infineon Technologies AG SI3443DVTRPBF MOSFET P-CH 20V 4.4A MICRO6
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DigiKey	SI3443DVTRPBF	Reel				1 - 10 - 100 - 1000 - 10000 -	Buy Now
	SI3443DVTRPBF	Digi-Reel			1	1 $0.54 10 $0.54 100 $0.54 1000 $0.54 10000 $0.54	Buy Now
	SI3443DVTRPBF	Cut Tape				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Win Source Electronics	SI3443DVTRPBF		79,200			1 - 10 - 100 - 1000 $0.14 10000 $0.113	Buy Now

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SI3443DV Datasheets (14)

Part	Manufacturer	Description	Datasheet Type	PDF
SI3443DV	Fairchild Semiconductor	P-Channel 2.5V Specified PowerTrench - MOSFET	Original	PDF
SI3443DV	International Rectifier	HEXFET Power Mosfet	Original	PDF
SI3443DV	International Rectifier	HEXFET Power MOSFET	Original	PDF
Si3443DV	Toshiba	Power MOSFETs Cross Reference Guide	Original	PDF
SI3443DV	Vishay	P-Channel 2.5-V (G-S) MOSFET	Original	PDF
Si3443DV	International Rectifier	HEXFET Power MOSFET	Scan	PDF
SI3443DV_NF073	Fairchild Semiconductor	P-Channel 2.5V Specified PowerTrench MOSFET	Original	PDF
SI3443DV_NL	Fairchild Semiconductor	P-Channel 2.5V Specified PowerTrench MOSFET	Original	PDF
SI3443DVPBF	InterFET	HEXFET Power MOSFET	Original	PDF
SI3443DV_Q	Fairchild Semiconductor	P-Channel 2.5V Specified PowerTrench MOSFET	Original	PDF
Si3443DV SPICE Device Model	Vishay	P-Channel 2.5-V (G-S) MOSFET	Original	PDF
SI3443DV-T1	Vishay Intertechnology	P-Channel 2.5-V (G-S) Rated MOSFET	Original	PDF
SI3443DVTR	International Rectifier	-20V Single P-Channel HEXFET Power MOSFET in a TSOP-6 (Micro 6) package	Original	PDF
SI3443DVTRPBF	International Rectifier		Original	PDF

SI3443DV Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
mosfet p-channel 300v irf Abstract: P-Channel 200V MOSFET TSOP6 Si3443DVPbF IRF5850 IRF5851 IRF5852 mosfet 23 Tsop-6 PD-95240 p-channel 250V 30A power mosfet IRF 100A 500V Text: PD-95240 Si3443DVPbF HEXFET Power MOSFET l l l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel -2.5V Rated Lead-Free D A D 1 6 2 5 3 4 VDSS = -20V D G D S RDS on = 0.065Ω Top View Description These P-channel MOSFETs from International Rectifier	Original	PDF	PD-95240 Si3443DVPbF OT-23. mosfet p-channel 300v irf P-Channel 200V MOSFET TSOP6 IRF5850 IRF5851 IRF5852 mosfet 23 Tsop-6 PD-95240 p-channel 250V 30A power mosfet IRF 100A 500V
SI3443DV Abstract: No abstract text available Text: Si3443DV Vishay Siliconix P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) –20 20 rDS(on) (W) ID (A) 0.065 @ VGS = –4.5 V "4.4 0.090 @ VGS = –2.7 V "3.7 0.100 @ VGS = –2.5 V "3.5 (4) S TSOP-6 Top View 1 6 (3) G 3 mm 2 5 3 4 (1, 2, 5, 6) D 2.85 mm	Original	PDF	Si3443DV S-54948--Rev. 29-Sep-97
SI3443DV-T1-E3 Abstract: SI3443BDV-T1-E3 SI3443DV-T1 74073 Si3443DV SI3443BDV Text: Specification Comparison Vishay Siliconix Si3443BDV vs. Si3443DV Description: P-Channel, 2.5 V G-S MOSFET Package: TSOP-6 Pin Out: Identical Part Number Replacements: Si3443BDV-T1-E3 Replaces Si3443DV-T1-E3 Si3443BDV-T1 Replaces Si3443DV-T1 ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted	Original	PDF	Si3443BDV Si3443DV Si3443BDV-T1-E3 Si3443DV-T1-E3 Si3443BDV-T1 Si3443DV-T1 06-Nov-06 74073
Si3443DV Abstract: 70-904 Text: SPICE Device Model Si3443DV P-Channel 2.5-V G-S Rated MOSFET Characteristics • P-channel Vertical DMOS • Macro-Model (Sub-circuit) • Level 3 MOS • Applicable for Both Linear and Switch Mode • Applicable Over a -55 to 125°C Temperature Range • Models Gate Charge, Transient, and Diode Reverse	Original	PDF	Si3443DV 70-904
Si3443DV-T1 Abstract: Si3443DV-T1-E3 Si3443DV Text: Si3443DV Vishay Siliconix P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) −20 FEATURES rDS(on) (W) ID (A) 0.065 @ VGS = −4.5 V −4.5 0.090 @ VGS = −2.7 V −3.8 0.100 @ VGS = −2.5 V −3.7 D TrenchFETr Power MOSFET D 100% Rg Tested TSOP-6 Top View	Original	PDF	Si3443DV Si3443DV-T1--E3 18-Jul-08 Si3443DV-T1 Si3443DV-T1-E3
Si3443DV Abstract: 70-904 Text: SPICE Device Model Si3443DV Vishay Siliconix P-Channel 2.5-V G-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range	Original	PDF	Si3443DV 18-Jul-08 70-904
SI3443BDV Abstract: Si3443DV Si3443DV-T1-E3 Si3443DV-T1 Si3443BDV-T1-E3 Text: Specification Comparison Vishay Siliconix Si3443BDV vs. Si3443DV Description: P-Channel, 2.5-V G-S MOSFET Package: TSOP-6 Pin Out: Identical Part Number Replacements: Si3443BDV-T1 Replaces Si3443DV-T1 Si3443BDV-T1—E3 (Lead (Pb)-Free version) Replaces Si3443DV-T1—E3	Original	PDF	Si3443BDV Si3443DV Si3443BDV-T1 Si3443DV-T1 Si3443BDV-T1--E3 Si3443DV-T1--E3 Si3443DV-T1-E3 Si3443BDV-T1-E3
SI3443DV-T1 Abstract: No abstract text available Text: Si3443DV Vishay Siliconix P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) −20 FEATURES rDS(on) (W) ID (A) 0.065 @ VGS = −4.5 V −4.5 0.090 @ VGS = −2.7 V −3.8 0.100 @ VGS = −2.5 V −3.7 D TrenchFETr Power MOSFET D 100% Rg Tested TSOP-6 Top View	Original	PDF	Si3443DV Si3443DV-T1--E3 08-Apr-05 SI3443DV-T1
Untitled Abstract: No abstract text available Text: Si3443DV Vishay Siliconix P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) –20 20 rDS(on) (W) ID (A) 0.065 @ VGS = –4.5 V "4.4 0.090 @ VGS = –2.7 V "3.7 0.100 @ VGS = –2.5 V "3.5 (4) S TSOP-6 Top View 1 6 (3) G 3 mm 2 5 3 4 (1, 2, 5, 6) D 2.85 mm	Original	PDF	Si3443DV 08-Apr-05
Untitled Abstract: No abstract text available Text: Si3443DV Vishay Siliconix P-Channel, 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) –20 RDS(ON) (W) ID (A) 0.065 @ VGS = –4.5 V "4.4 0.090 @ VGS = –2.7 V "3.7 0.100 @ VGS = –2.5 V "3.5 (4) S TSOP-6 Top View 1 6 (3) G 3 mm 2 5 3 4 (1, 2, 5, 6) D 2.85 mm	Original	PDF	Si3443DV S-54948--Rev. 29-Sep-97
P-Channel 200V MOSFET TSOP6 Abstract: No abstract text available Text: PD- 93795 Si3443DV HEXFET Power MOSFET l l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel -2.5V Rated D A D 1 6 2 5 3 4 VDSS = -20V D G D RDS on = 0.065Ω S T o p V ie w Description These P-channel MOSFETs from International Rectifier	Original	PDF	Si3443DV OT-23. P-Channel 200V MOSFET TSOP6
Si3443DV Abstract: P-Channel 200V MOSFET TSOP6 Text: PD- 93795A Si3443DV HEXFET Power MOSFET l l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel -2.5V Rated D A D 1 6 2 5 3 4 VDSS = -20V D G D S RDS on = 0.065Ω T o p V ie w Description These P-channel MOSFETs from International Rectifier	Original	PDF	3795A Si3443DV OT-23. P-Channel 200V MOSFET TSOP6
Si3443DV Abstract: No abstract text available Text: Si3443DV P-Channel 2.5V Specified PowerTrench MOSFET General Description Features This P-Channel 2.5V specified MOSFET is produced using Fairchild's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for	Original	PDF	Si3443DV
Untitled Abstract: No abstract text available Text: Si3443DV P-Channel 2.5V Specified PowerTrench MOSFET General Description Features This P-Channel 2.5V specified MOSFET is produced using Fairchild's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for	Original	PDF	Si3443DV

SI3443DV-T1 Abstract: No abstract text available Text: Si3443DV Vishay Siliconix P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) - 20 FEATURES rDS(on) (W) ID (A) 0.065 @ VGS = - 4.5 V - 4.5 0.090 @ VGS = - 2.7 V - 3.8 0.100 @ VGS = - 2.5 V - 3.7 D TrenchFETr Power MOSFET D 100% Rg Tested TSOP-6 Top View 3 mm	Original	PDF	Si3443DV Si3443DV-T1 S-31725--Rev. 18-Aug-03
AN609 Abstract: Si3443DV Text: Si3443DV_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].	Original	PDF	Si3443DV AN609 30-Nov-05
Untitled Abstract: No abstract text available Text: Si3443DV P-Channel 2.5V Specified PowerTrench MOSFET General Description Features This P-Channel 2.5V specified MOSFET is produced using Fairchild's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for	Original	PDF	Si3443DV
D207 Abstract: 838 ir TSOP IR Text: Si3443DV Tape & Reel Information TSOP-6 WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: 310 322 3331 IR GREAT BRITAIN: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: + 44 1883 732020 IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200	Original	PDF	Si3443DV D207 838 ir TSOP IR
tsop6 Abstract: TSOP-6 SI3443DV TSOP-6 Marking Marking information part marking information 036 marking TSOP66 Text: Si3443DV Package Outline TSOP-6 Part Marking Information TSOP-6 6 www.irf.com	Original	PDF	Si3443DV tsop6 TSOP-6 TSOP-6 Marking Marking information part marking information 036 marking TSOP66
SI3443DV Abstract: IRF5806 IRF5852 MO-193-AA IRF5800 IRF5805 IRF5810 IRF5850 IRF5851 MO-193AA Text: TSOP6 MO-193AA W = (1-26) IF PRECEDED BY LAST DIGIT OF CALENDAR YEAR Y = YEAR W = WEEK PART NUMBER TOP PART NUMBER CODE REFERENCE: A = SI3443DV B = IRF5800 C = IRF5850 D = IRF5851 E = IRF5852 I = IRF5805 J = IRF5806 K = IRF5810 LOT CODE YEAR Y 2001 2002	Original	PDF	MO-193AA) SI3443DV IRF5800 IRF5850 IRF5851 IRF5852 IRF5805 IRF5806 IRF5810 SI3443DV IRF5806 IRF5852 MO-193-AA IRF5800 IRF5805 IRF5810 IRF5850 IRF5851 MO-193AA
Si3443DV Abstract: s0499 Text: Si3443DV Vishay Siliconix P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) - 20 rDS(on) (W) ID (A) 0.065 @ VGS = - 4.5 V - 4.5 0.090 @ VGS = - 2.7 V - 3.8 0.100 @ VGS = - 2.5 V - 3.7 (4) S TSOP-6 Top View 1 6 (3) G 3 mm 2 5 3 4 2.85 mm (1, 2, 5, 6) D P-Channel MOSFET	Original	PDF	Si3443DV S-04990--Rev. 29-Oct-01 s0499
Si3443DV Abstract: No abstract text available Text: Si3443DV Single P-Channel, 2.5-V G-S Rated MOSFET Product Summary VDS (V) –20 rDS(on) (W) ID (A) 0.065 @ VGS = –4.5 V "4.4 0.090 @ VGS = –2.7 V "3.7 0.100 @ VGS = –2.5 V "3.5 (4) S TSOP-6 Top View 1 6 (3) G 3 mm 2 5 3 4 (1, 2, 5, 6) D 2.85 mm P-Channel MOSFET	Original	PDF	Si3443DV S-53066--Rev. 19-May-97
Si3443DV Abstract: No abstract text available Text: SPICE Device Model Si3443DV Vishay Siliconix P-Channel 2.5-V G-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range	Original	PDF	Si3443DV 18-Jul-08
Untitled Abstract: No abstract text available Text: Tem ic Si3443DV Semiconductors P-Channel, 2.5-V G-S Rated MOSFET Product Summary V D S (V ) -2 0 r DS(on) (£2) I d (A ) 0 .0 6 5 @ V Gs = - 4 .5 V ± 4 .4 0 .0 9 0 @ V Gs = - 2 .7 V ± 3 .7 0 .1 0 0 @ V Gs = - 2 . 5 V ± 3 .5 (4 )S Q TSOP-6 Top View 3 mm	OCR Scan	PDF	Si3443DV S-54948â 29-Sep-97

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SI3443DV Datasheets (14)

SI3443DV Datasheets Context Search

mosfet p-channel 300v irf

SI3443DV

SI3443DV-T1-E3

Si3443DV

Si3443DV-T1

Si3443DV

SI3443BDV

SI3443DV-T1

Untitled

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P-Channel 200V MOSFET TSOP6

Si3443DV

Si3443DV

Untitled

SI3443DV-T1

AN609

Untitled

D207

tsop6

SI3443DV

Si3443DV

Si3443DV

Si3443DV

Untitled