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Vishay Siliconix SI3441BDV-T1-E3 MOSFET P-CH 20V 2.45A 6TSOP
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SI3441BDV-T1-E3	Reel				1 - 10 - 100 - 1000 - 10000 -	Buy Now
	SI3441BDV-T1-E3	Cut Tape				1 - 10 - 100 - 1000 - 10000 -	Buy Now
	SI3441BDV-T1-E3	Digi-Reel			1	1 $0.42 10 $0.42 100 $0.42 1000 $0.42 10000 $0.42	Buy Now
RS	SI3441BDV-T1-E3	Bulk			3,000	1 - 10 - 100 - 1000 - 10000 $0.371	Get Quote
Bristol Electronics	SI3441BDV-T1-E3		245		7	1 - 10 $0.75 100 $0.4875 1000 $0.2812 10000 $0.2812	Buy Now
Quest Components	SI3441BDV-T1-E3		196			1 $1 10 $1 100 $0.5 1000 $0.3 10000 $0.3	Buy Now
Vishay Siliconix SI3441BDV-T1-GE3 MOSFET P-CH 20V 2.45A 6TSOP
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SI3441BDV-T1-GE3	Reel				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Vishay Intertechnologies SI3441DV-T1
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Bristol Electronics	SI3441DV-T1		24,666			1 - 10 - 100 - 1000 - 10000 -	Get Quote
	SI3441DV-T1		2,524			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Vishay Siliconix SI3441DVT1
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Bristol Electronics	SI3441DVT1		8,598			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Vishay BLH SI3441BDV-T1-E3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Bristol Electronics	SI3441BDV-T1-E3		2,895		7	1 - 10 $0.75 100 $0.4875 1000 $0.21 10000 $0.195	Buy Now

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SI3441 Datasheets (13)

Part	Manufacturer	Description	Datasheet Type	PDF
SI3441	Fairchild Semiconductor	P-Channel 2.5V Specified PowerTrench MOSFET	Original	PDF
Si3441ADV	Temic Semiconductors	P-Channel 2.5-V (G-S) Rated MOSFET	Original	PDF
SI3441BDV	Vishay Siliconix	MOSFETs	Original	PDF
SI3441BDV	Vishay Telefunken	P-channel 2.5-v (g-s) Mosfet	Original	PDF
Si3441BDV SPICE Device Model	Vishay	P-Channel 2.5-V (G-S) MOSFET	Original	PDF
SI3441BDV-T1-E3	Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 20V 2.45A 6-TSOP	Original	PDF
SI3441BDV-T1-GE3	Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 20V 2.45A 6-TSOP	Original	PDF
SI3441DV	Fairchild Semiconductor	P-Channel 2.5V Specified PowerTrench MOSFET	Original	PDF
Si3441DV	Toshiba	Power MOSFETs Cross Reference Guide	Original	PDF
Si3441DV	Vishay Intertechnology	P-Channel 2.5-V (G-S) MOSFET	Original	PDF
SI3441DV_NF073	Fairchild Semiconductor	P-Channel 2.5V Specified PowerTrench MOSFET	Original	PDF
SI3441DV_NL	Fairchild Semiconductor	P-Channel 2.5V Specified PowerTrench MOSFET	Original	PDF
Si3441DV SPICE Device Model	Vishay	P-Channel 2.5-V (G-S) MOSFET	Original	PDF

SI3441 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Si3441BDV Abstract: Si3441BDV-T1-E3 Si3441BDV-T1-GE3 Text: Si3441BDV Vishay Siliconix P-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.090 at VGS = - 4.5 V - 2.9 0.130 at VGS = - 2.5 V - 2.45 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs	Original	PDF	Si3441BDV 2002/95/EC Si3441BDV-T1-E3 Si3441BDV-T1-GE3 18-Jul-08
SI3441DV-T1 Abstract: Si3441DV TR55 SI3441BDV-T1-E3 Si3441BDV Si3441BDV-T1 Text: Specification Comparison Vishay Siliconix Si3441BDV vs. Si3441DV Description: P-Channel, 2.5 V G-S MOSFET Package: TSOP-6 Pin Out: Identical Part Number Replacements: Si3441BDV-T1 Replaces Si3441DV-T1 Si3441BDV-T1-E3 (Lead (Pb)-free version) Replaces Si3441DV-T1	Original	PDF	Si3441BDV Si3441DV Si3441BDV-T1 Si3441DV-T1 Si3441BDV-T1-E3 06-Nov-06 TR55
Si3441DV Abstract: TSOP6 Text: TSOP-6 The Next Step for LITTLE FOOTR Selector Guide Maximum Ratings rDS on (W) Part Number VDS (V) VGS = 10 V VGS = 4.5 V Si3454DV/X 30 0.065 Si3455DV/X 30 0.10 Si3442DV/X 20 0.07 Si3441DV/X 20 0.10 VGS = 2.5 V ID (A) ( ) Configuration Available 0.095 "4.2	Original	PDF	Si3454DV/X Si3455DV/X Si3442DV/X Si3441DV/X Si3441DV TSOP6
Si3441DV Abstract: 20211 Text: Si3441DV Vishay Siliconix P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY rDS(on) (W) ID (A)b 0.10 @ VGS = - 4.5 V - 3.3 0.135 @ VGS = - 2.5 V - 2.9 VDS (V) - 20 (4) S TSOP-6 Top View 1 6 (3) G 3 mm 2 5 3 4 (1, 2, 5, 6) D 2.85 mm P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)	Original	PDF	Si3441DV 18-Jul-08 20211
Si3441BDV Abstract: Si3441BDV-T1 Text: Si3441BDV Vishay Siliconix P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) −20 ID (A) 0.090 @ VGS = −4.5 V −2.9 0.130 @ VGS = −2.5 V −2.45 TSOP-6 Top View 3 mm 1 6 2 5 3 4 (4) S (3) G 2.85 mm (1, 2, 5, 6) D Ordering Information: Si3441BDV-T1	Original	PDF	Si3441BDV Si3441BDV-T1 Si3441BDV-T1--E3 S-40424--Rev. 15-Mar-04
Si3441DV Abstract: No abstract text available Text: Si3441DV Vishay Siliconix P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) –20 rDS(on) (W) ID (A) 0.10 @ VGS = –4.5 V –3.3 0.135 @ VGS = –2.5 V –2.9 (4) S TSOP-6 Top View 1 6 (3) G 3 mm 2 5 3 4 (1, 2, 5, 6) D 2.85 mm P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)	Original	PDF	Si3441DV S-20212--Rev. 01-Apr-02
Untitled Abstract: No abstract text available Text: Si3441DV Vishay Siliconix P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) - 20 rDS(on) (W) ID (A) 0.10 @ VGS = - 4.5 V - 3.3 0.135 @ VGS = - 2.5 V - 2.9 (4) S TSOP-6 Top View 1 6 (3) G 3 mm 2 5 3 4 (1, 2, 5, 6) D 2.85 mm P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)	Original	PDF	Si3441DV 08-Apr-05
Si3441BDV-T1-E3 Abstract: Si3441BDV Si3441BDV-T1-GE3 Text: Si3441BDV Vishay Siliconix P-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.090 at VGS = - 4.5 V - 2.9 0.130 at VGS = - 2.5 V - 2.45 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs	Original	PDF	Si3441BDV 2002/95/EC Si3441BDV-T1-E3 Si3441BDV-T1-GE3 11-Mar-11
Si3441DV Abstract: 15nc15 Text: SPICE Device Model Si3441DV Vishay Siliconix P-Channel 2.5-V G-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range	Original	PDF	Si3441DV 17-Apr-01 15nc15
Si3441BDV SPICE Device Model Abstract: Si3441BDV Text: SPICE Device Model Si3441BDV Vishay Siliconix P-Channel 2.5-V G-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range	Original	PDF	Si3441BDV 18-Jul-08 Si3441BDV SPICE Device Model
Si3441BDV Abstract: No abstract text available Text: Si3441BDV New Product Vishay Siliconix P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.090 @ VGS = - 4.5 V - 2.9 0.130 @ VGS = - 2.5 V - 2.45 - 20 (4) S TSOP-6 Top View 1 6 (3) G 3 mm 2 5 3 4 (1, 2, 5, 6) D 2.85 mm P-Channel MOSFET	Original	PDF	Si3441BDV S-03669--Rev. 07-Apr-03
Si3441BDV Abstract: Si3441BDV-T1 Text: Si3441BDV Vishay Siliconix P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) −20 ID (A) 0.090 @ VGS = −4.5 V −2.9 0.130 @ VGS = −2.5 V −2.45 TSOP-6 Top View 3 mm 1 6 2 5 3 4 (4) S (3) G 2.85 mm (1, 2, 5, 6) D Ordering Information: Si3441BDV-T1	Original	PDF	Si3441BDV Si3441BDV-T1 Si3441BDV-T1--E3 08-Apr-05
Si3441DV Abstract: 25C84 Text: Si3441DV P-Channel 2.5-V G-S Rated MOSFET Product Summary VDS (V) –20 rDS(on) (W) ID (A) 0.10 @ VGS = –4.5 V "3.3 0.135 @ VGS = –2.5 V "2.9 (4) S TSOP-6 Top View 1 6 Power Dissipation (3) G 3 mm 2 5 3 4 Si3441DV—2.0 W (1, 2, 5, 6) D 2.85 mm P-Channel MOSFET	Original	PDF	Si3441DV Si3441DV--2 S-49525--Rev. 06-Oct-97 25C84
7057 Abstract: 70570 Si3441DV Text: SPICE Device Model Si3441DV Vishay Siliconix P-Channel 2.5-V G-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range	Original	PDF	Si3441DV S-50383Rev. 21-Mar-05 7057 70570

s21127 Abstract: SI3441BDV Text: Si3441BDV New Product Vishay Siliconix P-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.090 @ VGS = -4.5 V -2.9 0.130 @ VGS = -2.5 V - 2.45 D TrenchFETr Power MOSFET D APPLICATIONS D D -20 (4) S TSOP-6 Top View 1 6 (3) G 3 mm	Original	PDF	Si3441BDV S-21127--Rev. 25-Nov-02 s21127
Untitled Abstract: No abstract text available Text: Si3441DV Vishay Siliconix P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) –20 rDS(on) (W) ID (A) 0.10 @ VGS = –4.5 V "3.3 0.135 @ VGS = –2.5 V "2.9 (4) S TSOP-6 Top View 1 6 (3) G 3 mm 2 5 3 4 (1, 2, 5, 6) D 2.85 mm P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)	Original	PDF	Si3441DV S-56944Rev. 23-Nov-98
Si3441BDV Abstract: Si3441BDV-T1 Text: Si3441BDV Vishay Siliconix P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) −20 ID (A) 0.090 @ VGS = −4.5 V −2.9 0.130 @ VGS = −2.5 V −2.45 TSOP-6 Top View 3 mm 1 6 2 5 3 4 (4) S (3) G 2.85 mm (1, 2, 5, 6) D Ordering Information: Si3441BDV-T1	Original	PDF	Si3441BDV Si3441BDV-T1 Si3441BDV-T1--E3 18-Jul-08
Si3441BDV Abstract: Si3441BDV-T1 Si3441BDV-T1-E3 Text: Si3441BDV Vishay Siliconix P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) −20 ID (A) 0.090 @ VGS = −4.5 V −2.9 0.130 @ VGS = −2.5 V −2.45 TSOP-6 Top View 3 mm 1 6 2 5 3 4 (4) S (3) G 2.85 mm (1, 2, 5, 6) D Ordering Information: Si3441BDV-T1	Original	PDF	Si3441BDV Si3441BDV-T1 Si3441BDV-T1--E3 Si3441BDV-T1-E3
Untitled Abstract: No abstract text available Text: Si3441DV P-Channel 2.5V Specified PowerTrench MOSFET General Description Features This P-Channel 2.5V specified MOSFET uses Fairchild’s low voltage PowerTrench process. It has been optimized for battery power management applications. • –3.5 A, –20 V.	Original	PDF	Si3441DV
Untitled Abstract: No abstract text available Text: Si3441BDV Vishay Siliconix P-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.090 at VGS = - 4.5 V - 2.9 0.130 at VGS = - 2.5 V - 2.45 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs	Original	PDF	Si3441BDV 2002/95/EC Si3441BDV-T1-E3 Si3441BDV-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12
Si3441BDV-T1-E3 Abstract: No abstract text available Text: Si3441BDV Vishay Siliconix P-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.090 at VGS = - 4.5 V - 2.9 0.130 at VGS = - 2.5 V - 2.45 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs	Original	PDF	Si3441BDV 2002/95/EC Si3441BDV-T1-E3 Si3441BDV-T1-GE3 11-Mar-11
Si3441DV Abstract: No abstract text available Text: Si3441DV P-Channel Enhancement-Mode MOSFET Product Summary VDS V –20 rDS(on) (W) ID (A) 0.10 @ VGS = –4.5 V "3.3 0.135 @ VGS = –2.5 V "2.9 (4) S TSOP-6 Top View 1 6 Power Dissipation (3) G 3 mm 2 5 3 4 Si3441DV—2.0 W (1, 2, 5, 6) D 2.75 mm P-Channel MOSFET	Original	PDF	Si3441DV Si3441DV--2 S-48796--Rev. 29-Aug-96
Si3441DV Abstract: No abstract text available Text: Si3441DV P-Channel 2.5V Specified PowerTrench MOSFET General Description Features This P-Channel 2.5V specified MOSFET uses Fairchild’s low voltage PowerTrench process. It has been optimized for battery power management applications. • –3.5 A, –20 V.	Original	PDF	Si3441DV
Si3441DV Abstract: No abstract text available Text: SPICE Device Model Si3441DV Vishay Siliconix P-Channel 2.5-V G-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range	Original	PDF	Si3441DV 18-Jul-08

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Vishay Siliconix SI3441BDV-T1-E3

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SI3441 Datasheets (13)

SI3441 Datasheets Context Search

Si3441BDV

SI3441DV-T1

Si3441DV

Si3441DV

Si3441BDV

Si3441DV

Untitled

Si3441BDV-T1-E3

Si3441DV

Si3441BDV SPICE Device Model

Si3441BDV

Si3441BDV

Si3441DV

7057

s21127

Untitled

Si3441BDV

Si3441BDV

Untitled

Untitled

Si3441BDV-T1-E3

Si3441DV

Si3441DV

Si3441DV