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    SI2318 Price and Stock

    Vishay Siliconix SI2318CDS-T1-BE3

    N-CHANNEL 40-V (D-S) MOSFET
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    DigiKey SI2318CDS-T1-BE3 Cut Tape 9,859 1
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    SI2318CDS-T1-BE3 Digi-Reel 9,859 1
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    SI2318CDS-T1-BE3 Reel 9,000 3,000
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    Vishay Siliconix SI2318DS-T1-BE3

    N-CHANNEL 40-V (D-S) MOSFET
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    DigiKey SI2318DS-T1-BE3 Cut Tape 446 1
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    SI2318DS-T1-BE3 Digi-Reel 446 1
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    SI2318DS-T1-BE3 Reel 3,000
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    New Advantage Corporation SI2318DS-T1-BE3 6,000 1
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    Vishay Siliconix SI2318DS-T1-E3

    MOSFET N-CH 40V 3A SOT23-3
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    RS SI2318DS-T1-E3 Bulk 3,000
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    Vishay Intertechnologies SI2318DS-T1-E3

    Power MOSFET, N Channel, 40 V, 3 A, 45 mOhm, SOT-23, 3 Pins, Surface Mount - Tape and Reel (Alt: SI2318DS-T1-E3)
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    Avnet Americas SI2318DS-T1-E3 Reel 15,000 3,000
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    SI2318DS-T1-E3 Ammo Pack 1
    • 1 $0.652
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    Verical SI2318DS-T1-E3 470 37
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    Arrow Electronics SI2318DS-T1-E3 470 13 Weeks 1
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    SI2318DS-T1-E3 Cut Strips 16 13 Weeks 1
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    Newark SI2318DS-T1-E3 Cut Tape 9,144 1
    • 1 $0.209
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    SI2318DS-T1-E3 Reel 1
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    Bristol Electronics SI2318DS-T1-E3 70
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    TTI SI2318DS-T1-E3 Cut Tape 3,475 25
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    TME SI2318DS-T1-E3 3
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    EBV Elektronik SI2318DS-T1-E3 143 Weeks 3,000
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    Vyrian SI2318DS-T1-E3 40,530
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    Vishay Intertechnologies SI2318CDS-T1-BE3

    N-CHANNEL 40-V (D-S) MOSFET - Tape and Reel (Alt: SI2318CDS-T1-BE3)
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    Avnet Americas SI2318CDS-T1-BE3 Reel 15,000 17 Weeks 3,000
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    Mouser Electronics SI2318CDS-T1-BE3 235,040
    • 1 $0.44
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    Verical SI2318CDS-T1-BE3 12,000 3,000
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    Arrow Electronics SI2318CDS-T1-BE3 12,000 15 Weeks 3,000
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    Newark SI2318CDS-T1-BE3 Bulk 3,000
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    TTI SI2318CDS-T1-BE3 Reel 27,000 3,000
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    EBV Elektronik SI2318CDS-T1-BE3 16 Weeks 3,000
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    Vyrian SI2318CDS-T1-BE3 54,828
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    Find more SI2318 price and stock on Findchips.com

    SI2318 Datasheets (10)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SI2318A UMW SOT-23 N-CHANNEL POWER MOSFETS R Original PDF
    SI2318A-TP Micro Commercial MOSFET N-CH SOT23-3 Original PDF
    SI2318CDS-T1-BE3 Vishay Siliconix N-CHANNEL 40-V (D-S) MOSFET Original PDF
    SI2318CDS-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 40V 5.6A SOT-23 Original PDF
    SI2318DS Vishay Siliconix MOSFETs Original PDF
    Si2318DS SPICE Device Model Vishay N-Channel 40-V (D-S) MOSFET Original PDF
    SI2318DS-T1 Vishay Telefunken Original PDF
    SI2318DS-T1-BE3 Vishay Siliconix N-CHANNEL 40-V (D-S) MOSFET Original PDF
    SI2318DS-T1-E3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 40V 3A SOT23-3 Original PDF
    SI2318DS-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 40V 3A SOT-23 Original PDF

    SI2318 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Si2318DS

    Abstract: Si2318DS-T1 C8 MARKING
    Text: Si2318DS Vishay Siliconix New Product N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 40 D TrenchFETr Power MOSFET rDS(on) (W) ID (A) 0.045 @ VGS = 10 V 3.9 0.058 @ VGS = 4.5 V 3.5 APPLICATIONS D Stepper Motors D Load Switch TO-236 (SOT-23) G


    Original     		Si2318DS O-236 OT-23) Si2318DS-T1 S-31731--Rev. 18-Aug-03 C8 MARKING PDF

    Si2318DS

    Abstract: Si2318DS-T1-E3
    Text: Si2318DS Vishay Siliconix N-Channel 40-V D-S MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 PRODUCT SUMMARY VDS (V) 40 RDS(on) (Ω) ID (A) 0.045 at VGS = 10 V 3.9 0.058 at VGS = 4.5 V 3.5 Available • TrenchFET Power MOSFET APPLICATIONS


    Original     		Si2318DS O-236 OT-23) Si2318DS-T1-E3 Si2318DS-T1-GE3 11-Mar-11 PDF

    Si2318CDS

    Abstract: No abstract text available
    Text: SPICE Device Model Si2318CDS Vishay Siliconix N-Channel 40 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		Si2318CDS 18-Jul-08 PDF

    Untitled

    Abstract: No abstract text available
    Text: New Product Si2318CDS Vishay Siliconix N-Channel 40 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.042 at VGS = 10 V 5.6 0.051 at VGS = 4.5 V 5.1 VDS (V) 40 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		Si2318CDS 2002/95/EC OT-23 Si2318CDS-T1-GE3 11-Mar-11 PDF

    Untitled

    Abstract: No abstract text available
    Text: New Product Si2318CDS Vishay Siliconix N-Channel 40 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.042 at VGS = 10 V 5.6 0.051 at VGS = 4.5 V 5.1 VDS (V) 40 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		Si2318CDS 2002/95/EC OT-23 Si2318CDS-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    S-31731

    Abstract: Si2318DS Si2318DS-T1 marking code vishay SILICONIX sot-23 C8 MARKING
    Text: Si2318DS Vishay Siliconix New Product N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 40 D TrenchFETr Power MOSFET rDS(on) (W) ID (A) 0.045 @ VGS = 10 V 3.9 0.058 @ VGS = 4.5 V 3.5 APPLICATIONS D Stepper Motors D Load Switch TO-236 (SOT-23) G


    Original     		Si2318DS O-236 OT-23) Si2318DS-T1 08-Apr-05 S-31731 marking code vishay SILICONIX sot-23 C8 MARKING PDF

    Untitled

    Abstract: No abstract text available
    Text: Si2318DS Vishay Siliconix N-Channel 40-V D-S MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 PRODUCT SUMMARY VDS (V) 40 RDS(on) (Ω) ID (A) 0.045 at VGS = 10 V 3.9 0.058 at VGS = 4.5 V 3.5 Available • TrenchFET Power MOSFET APPLICATIONS


    Original     		Si2318DS O-236 OT-23) Si2318DS-T1-E3 Si2318DS-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A PDF

    Untitled

    Abstract: No abstract text available
    Text: Si2318DS Vishay Siliconix N-Channel 40-V D-S MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 PRODUCT SUMMARY VDS (V) 40 RDS(on) (Ω) ID (A) 0.045 at VGS = 10 V 3.9 0.058 at VGS = 4.5 V 3.5 Available • TrenchFET Power MOSFET APPLICATIONS


    Original     		Si2318DS O-236 OT-23) Si2318DS-T1-E3 Si2318DS-T1-GE3 11-Mar-11 PDF

    AN609

    Abstract: Si2318DS
    Text: Si2318DS_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original     		Si2318DS AN609 03-May-07 PDF

    Untitled

    Abstract: No abstract text available
    Text: New Product Si2318CDS Vishay Siliconix N-Channel 40 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.042 at VGS = 10 V 5.6 0.051 at VGS = 4.5 V 5.1 VDS (V) 40 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		Si2318CDS 2002/95/EC OT-23 Si2318CDS-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si2318CDS_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


    Original     		Si2318CDS AN609, 9368u 0110m 3462m 6629u 2010u 2716m 4579m PDF

    Untitled

    Abstract: No abstract text available
    Text: Si2318DS Vishay Siliconix N-Channel 40-V D-S MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 PRODUCT SUMMARY VDS (V) 40 RDS(on) (Ω) ID (A) 0.045 at VGS = 10 V 3.9 0.058 at VGS = 4.5 V 3.5 Available • TrenchFET Power MOSFET APPLICATIONS


    Original     		Si2318DS O-236 OT-23) Si2318DS-T1-E3 Si2318DS-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. PDF

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model Si2318CDS www.vishay.com Vishay Siliconix N-Channel 40 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the -55 °C


    Original     		Si2318CDS 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    si2318cds

    Abstract: MARKING CODE P9
    Text: New Product Si2318CDS Vishay Siliconix N-Channel 40 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.042 at VGS = 10 V 5.6 0.051 at VGS = 4.5 V 5.1 VDS (V) 40 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		Si2318CDS 2002/95/EC OT-23 Si2318CDS-T1-GE3 21-Jan-08 O-236) S-03946-Rev. 09-Jul-01 09-Jul-01 MARKING CODE P9 PDF

    72585

    Abstract: si2318ds
    Text: SPICE Device Model Si2318DS Vishay Siliconix N-Channel 40-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Model Subcircuit) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		Si2318DS 0-to-10V 21-Oct-03 72585 PDF

    SI2318DS-T1-E3

    Abstract: Si2318DS
    Text: Si2318DS Vishay Siliconix N-Channel 40-V D-S MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 PRODUCT SUMMARY VDS (V) 40 RDS(on) (Ω) ID (A) 0.045 at VGS = 10 V 3.9 0.058 at VGS = 4.5 V 3.5 Available • TrenchFET Power MOSFET APPLICATIONS


    Original     		Si2318DS O-236 OT-23) Si2318DS-T1-E3 Si2318DS-T1-GE3 18-Jul-08 PDF

    SI2318CDS

    Abstract: SI2318CDS-T1GE3
    Text: New Product Si2318CDS Vishay Siliconix N-Channel 40 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.042 at VGS = 10 V 5.6 0.051 at VGS = 4.5 V 5.1 VDS (V) 40 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		Si2318CDS 2002/95/EC OT-23 Si2318CDS-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 SI2318CDS-T1GE3 PDF

    72585

    Abstract: Si2318DS
    Text: SPICE Device Model Si2318DS Vishay Siliconix N-Channel 40-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Model Subcircuit) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		Si2318DS 18-Jul-08 72585 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si2318DS Vishay Siliconix New Product N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 40 D TrenchFETr Power MOSFET rDS(on) (W) ID (A) 0.045 @ VGS = 10 V 3.9 0.058 @ VGS = 4.5 V 3.5 APPLICATIONS D Stepper Motors D Load Switch TO-236 (SOT-23) G


    Original     		Si2318DS O-236 OT-23) Si2318DS-T1 18-Jul-08 PDF

    DIODE SMD 5050

    Abstract: smd led 5050 SMD LED 5050 datasheet DO-219AB footprint SMD LED 5050 datasheet smd led smd 6 led 5050 datasheet led smd 5050 5050 SMD LED DIODE led SMD 5050 DO-219AB footprint SMD LED 5050 smd led smps ic smd 8 pin
    Text: V I S H A Y I N T E R T E C H N O L O G Y, I N C . AUTOMOTIVE APPLICATIONS SOLUTIONS MARKET SEGMENT w w w. v i s h a y. c o m Automotive Applications Solutions from Vishay Intertechnology Introduction Body Electric & Comfort Electric Sensors Immobilizer & Security Systems


    Original     		VSA-PL0017-0406 DIODE SMD 5050 smd led 5050 SMD LED 5050 datasheet DO-219AB footprint SMD LED 5050 datasheet smd led smd 6 led 5050 datasheet led smd 5050 5050 SMD LED DIODE led SMD 5050 DO-219AB footprint SMD LED 5050 smd led smps ic smd 8 pin PDF

    Untitled

    Abstract: No abstract text available
    Text: LT3497 Dual Full Function White LED Driver with Integrated Schottky Diodes DESCRIPTION FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ Drives Up to 12 White LEDs 6 in Series per Converter from a 3V Supply Two Independent Boost Converters Capable of


    Original     		LT3497 10-Pin TSSOP-16 LT3486 100mA LT3491 3497f PDF

    MIC3223

    Abstract: MSD1260-223ML-LD 08056D106MAT2A 12063D475KAT2A GRM188R60J106ME47D GRM319R61E475KA12D GRM188R71C473KA01D Schottky DIODE 3A SEI resistor AM2340N
    Text: MIC3223 Evaluation Board High-Power Boost LED Driver with Integrated FET Bringing the Power to Light General Description How It Works The MIC3223 is a constant-current boost switching controller specifically designed to power a string of highpower LEDs. The MIC3223 has an input voltage range


    Original     		MIC3223 200mV M9999-030210 MSD1260-223ML-LD 08056D106MAT2A 12063D475KAT2A GRM188R60J106ME47D GRM319R61E475KA12D GRM188R71C473KA01D Schottky DIODE 3A SEI resistor AM2340N PDF

    ic hm 2007 Architecture

    Abstract: ic hm 2007 internal block diagram ,Architecture 8050 sot-23 C1608COG1H220J dc adaptor 9v 2a Bead 220 ohm 2.5A 10uh coilcraft 1210 "Dual PNP Transistor" C1608COG1H102J sot-23-5 vishay
    Text: SP6134 Dual Supply Synchronous Buck Controller FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ VCC 1 3V to 15V Step Down Achieved Using Dual Input Small 10-Pin MSOP Package 2A to 15A Ouput Capability Highly Integrated Design, Minimal Components


    Original     		SP6134 10-Pin 20III 20Loop 20Oct12-06 CA95035 ic hm 2007 Architecture ic hm 2007 internal block diagram ,Architecture 8050 sot-23 C1608COG1H220J dc adaptor 9v 2a Bead 220 ohm 2.5A 10uh coilcraft 1210 "Dual PNP Transistor" C1608COG1H102J sot-23-5 vishay PDF

    ISL9504

    Abstract: b6886 PP3V42G3H NVIDIA G84m ISL9504BCRZ C8050 12v p66 apple k50 apple M75 MLB 820-2101 PP3V42
    Text: 8 6 7 2 3 4 5 CK APPD OROYA 1. ALL RESISTANCE VALUES ARE IN OHMS, 0.1 WATT +/- 5%. 2. ALL CAPACITANCE VALUES ARE IN MICROFARADS. 3. ALL CRYSTALS & OSCILLATOR VALUES ARE IN HERTZ. 1 REV ZONE ECN ENG APPD DESCRIPTION OF CHANGE DATE ? ? ? ? DATE ? 03/20/2007 - DVT


    Original     		ISL10 ISL11 ISL9504 b6886 PP3V42G3H NVIDIA G84m ISL9504BCRZ C8050 12v p66 apple k50 apple M75 MLB 820-2101 PP3V42 PDF