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    BSM10GD100

    Abstract: BSM10GD100D
    Text: SIEMENS IGBT Module BSM 10 GD 100 D Preliminary Data VCE = 1000 V / c = 6 x 1 1 A at Tc = 25 "C / c = 6 x 1 0 A at r c = 40 C • Power module • 3-phase full bridge • Including fast free-wheel diodes • Package with insulated metal base plate • Package outlines/Circuit diagram: 6a1


    OCR Scan     		PDF C67076-A2507-A52 SI100310 BSM10GD100D SII00313 BSM10GD100 BSM10GD100D