Untitled
Abstract: No abstract text available
Text: Tem ic Si6966DQ Semiconductors Dual N-Channel, 2.5-V G-S Rated MOSFET Product Summary VDS(V) Id r DS(on) (£2) 20 (A) 0.030 @VGs = 4.5 V ±4.5 0.040 @VGs = 2.5 V ±3.9 Di O D2 O Si s2 TSSOP-8 Di [ 1 Si E Si L i Gi [ i • Si6966DQ j D D2 i ] S2 _6J S2 3
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Si6966DQ
S-54713â
27-Oct-97
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Q62702-P1819
Abstract: NA010
Text: GaAlAs-IR-Lumineszenzdiode 880 nm und Si-Fototransistor GaAlAs-Infrared-Emitter (880 nm) and Si-Phototransistor SFH 7221 Wesentliche Merkmale Features • SMT-Gehäuse mit IR-Sender (880 nm) und Si-Fototransistor • Geeignet für SMT-Bestückung • Gegurtet lieferbar
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Q62702-P1819
Abstract: No abstract text available
Text: GaAlAs-IR-Lumineszensdiode 880 nm und Si-Fototransistor GaAlAs-Infrared-Emitter (880 nm) and Si-Phototransistor SFH 7221 Vorläufige Daten / Preliminary Data Wesentliche Merkmale • SMT-Gehäuse mit IR-Sender (880 nm) und Si-Fototransistor • Geeignet für SMT-Bestückung
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OHF00312
GPL06965
Q62702-P1819
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fototransistor
Abstract: No abstract text available
Text: 2013-08-14 Infrared-Emitter 850 nm and Si-Phototransistor IR-Emitter (850 nm) und Si-Fototransistor Version 1.0 SFH 7250 Features: Besondere Merkmale: • Available on tape and reel • SMT package with IR emitter (850 nm) and Si-phototransistor • Suitable for SMT assembly
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D-93055
fototransistor
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Untitled
Abstract: No abstract text available
Text: GaAlAs-IR-Lumineszenzdiode 880 nm und Si-Fototransistor GaAlAs-Infrared-Emitter (880 nm) and Si-Phototransistor Lead (Pb) Free Product - RoHS Compliant SFH 7221 Wesentliche Merkmale Features • SMT-Gehäuse mit IR-Sender (880 nm) und Si-Fototransistor • Geeignet für SMT-Bestückung
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Untitled
Abstract: No abstract text available
Text: GaAlAs-IR-Lumineszenzdiode 880 nm und Si-Fototransistor GaAlAs-Infrared-Emitter (880 nm) and Si-Phototransistor Lead (Pb) Free Product - RoHS Compliant SFH 7221 Wesentliche Merkmale Features • SMT-Gehäuse mit IR-Sender (880 nm) und Si-Fototransistor • Geeignet für SMT-Bestückung
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Q65110A2741
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led fototransistor
Abstract: No abstract text available
Text: GaAlAs-IR-Lumineszenzdiode 880 nm und Si-Fototransistor GaAlAs-Infrared-Emitter (880 nm) and Si-Phototransistor Lead (Pb) Free Product - RoHS Compliant SFH 7221 Wesentliche Merkmale Features • SMT-Gehäuse mit IR-Sender (880 nm) und Si-Fototransistor • Geeignet für SMT-Bestückung
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Q65110A2741
led fototransistor
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fototransistor led
Abstract: No abstract text available
Text: GaAlAs-IR-Lumineszenzdiode 880 nm und Si-Fototransistor GaAlAs-Infrared-Emitter (880 nm) and Si-Phototransistor Lead (Pb) Free Product - RoHS Compliant SFH 7221 Wesentliche Merkmale Features • SMT-Gehäuse mit IR-Sender (880 nm) und Si-Fototransistor • Geeignet für SMT-Bestückung
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uv phototransistor
Abstract: 8602 rectifier photodiode ge uv photodiode, GaP TSAL6200 ga09 80086 "photoconductive" 1015
Text: VISHAY Vishay Semiconductors Physics and Technology Emitters www.vishay.com 1 IRED Chips and Characteristics At present, the most popular IRED chip is made only from GaAs. Structure of the chip is displayed in figure 1. Al p - GaAs : Si n - GaAs : Si 94 8200
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14-Apr-04
uv phototransistor
8602 rectifier
photodiode ge
uv photodiode, GaP
TSAL6200
ga09
80086
"photoconductive" 1015
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BLD135D
Abstract: BLD128D BUL6802 BLD133D BLD137D bld128 BLD137 bld135 BLD139D BLD123D
Text: 深圳深爱半导体有限公司 Shenzhen SI Semiconductors CO.,Ltd. http://www.sisemi.com.cn sisemi@sisemi.com.cn SI transistors Selection Guide 一Compact fluorescent lamps Energy-Saving Lamps ： BVceo (V) Ic (A) Application（W） TO-92 TO-92 Die Size
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MJE13001
BUL6821
BUL6822
BUL6822A
BUL6823
MJE13003BR
O-126
BUL6802
BUL6823A
BLD135D
BLD128D
BUL6802
BLD133D
BLD137D
bld128
BLD137
bld135
BLD139D
BLD123D
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TSAL6200
Abstract: pn junction diode structure phototransistor K-T TSAL6200 application circuit
Text: Vishay Semiconductors Physics and Technology Emitters Materials Document Number 80086 02-02 IRED Chips and Characteristics At present, the most popular IRED chip is made only from GaAs. The structure of the chip is displayed in figure 5. p - GaAs : Si Al n - GaAs : Si
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logic ic 7476 pin diagram
Abstract: H13003 datasheet and pin diagram of IC 7476 pin diagram for IC 7476 h13001 6H23 IDX110 R019h 7476 PIN DIAGRAM v63n
Text: Preliminary HD66781 720-channel Source Driver for a-Si TFT/Low Temperature Poly-Si TFT Panels with 262,144-color display RAM REJxxxxxxx-xxxxZ Rev.0.5 July.31.2003 • Index Description . 6
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HD66781
720-channel
144-color
HD66781
logic ic 7476 pin diagram
H13003
datasheet and pin diagram of IC 7476
pin diagram for IC 7476
h13001
6H23
IDX110
R019h
7476 PIN DIAGRAM
v63n
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PDINP075500A-0-0-01
Abstract: PD-LD 850nm APD 850nm photodiode pigtail pigtail pin photodiode ge PDINV300SC2A-M-0 PDSIU500ST73-T-0 Si apd photodiode PDGAJ1001FCA-0-0-01 PDINC100SC22-M-0
Text: PD LD PDXX Series Detectors for Fiber Optics InGaAs, Si and Ge PIN Diodes Si and Ge APDs Inc PD-LD Inc. offers a variety of standard and custom PIN Photodiodes and APDs is fiber coupled packages. The semiconductors offered are of proven manufacture and design. Our Silicon
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1100nm,
1650nm
2100nm.
100micron.
PDINP075500A-0-0-01
PD-LD
850nm APD
850nm photodiode pigtail
pigtail pin photodiode ge
PDINV300SC2A-M-0
PDSIU500ST73-T-0
Si apd photodiode
PDGAJ1001FCA-0-0-01
PDINC100SC22-M-0
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PDINP075FC11-W-0
Abstract: 850nm APD 850nm photodiode pigtail germanium photodiode PIN PDINV300FC21-M-0 D10-210 InGaAs apd photodiode photodiode germanium PDGAJ1001FCA-0-0-01 PDINC1003FCA-0-0-01
Text: PD LD PDXX Series Detectors for Fiber Optics InGaAs, Si and Ge PIN Diodes Si and Ge APDs Inc. PD-LD Inc. offers a variety of standard and custom PIN Photodiodes and APDs is fiber coupled packages. The semiconductors offered are of proven manufacture and design. Our Silicon
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1100nm,
1650nm
2100nm.
100micron.
PDINP075FC11-W-0
850nm APD
850nm photodiode pigtail
germanium photodiode PIN
PDINV300FC21-M-0
D10-210
InGaAs apd photodiode
photodiode germanium
PDGAJ1001FCA-0-0-01
PDINC1003FCA-0-0-01
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Untitled
Abstract: No abstract text available
Text: SI6928DQ VISHAY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET PRODUCT SUM M ARY v „s (V) r d s (ON) (-3) lD (A) 0.035 @ V GS = 10 V ±4 .0 0.050 @ VGS = 4.5 V ±3 .4 30 D2 Di O TSSOP-8 d2 Di Si s2 Si6928DQ Si s2 Gi g2 Top View 6 6 Si s2 N-Channel MOSFET
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SI6928DQ
Si6928DQ
S-56945â
23-Nov-98
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Untitled
Abstract: No abstract text available
Text: Si6955DQ VISH A Y Siliconix Dual P-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) r DS(ON) (//) Id (A) 0.085 @ VGS = —10 V ±2 .5 0.19 @ VGs = —4.5 V ±1 .8 -3 0 Si Q S2 Q Di d2 TSSOP-8 d2 Di Si s2 s2 Gi g2 Si Si6955DQ Top View P-Channel MOSFET P-Channel MOSFET
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Si6955DQ
S-56944â
23-Nov-98
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Untitled
Abstract: No abstract text available
Text: GE C P L E S S E Y Si si Mit Junens ADVANCE INFORMATION o \ I v c: I o K S DS40S6-2.4 GP2010 GLOBAL POSITIONING SYSTEM RECEIVER RF FRONT END The GP2010 is GEC Plessey Semiconductors' second generation RFFront-end for Global Positioning System GPS) receivers. The GP2010 uses many innovative design
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DS40S6-2
GP2010
GP2010
TheGP2010
42MHz)
37bfiS22
GD24f
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SM31
Abstract: SM33 SM35 SM36 SM41 AHL-62N
Text: APPLICATION NOTE M16C/62A Group, M16C/62N Group SI/O3,4 setup procedures 1.0 Abstract The following article introduces SI/O3,4 setup procedures and its application example. 2.0 Introduction The explanation of this issue is applied in the following condition.
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M16C/62A
M16C/62N
REJ05B0264-0100Z/Rev
SM31
SM33
SM35
SM36
SM41
AHL-62N
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DNB-UJS
Abstract: DDT-UJS-TU2-1 opto InGan green CHIP LED LAMP LED 28500 mcd dominant DDB-UJS-RS1-1 DRR-NJS-T2U-1 dsw-usd-uv1-1 IR LED 810 nm SJS Products Chip led bi-color right angle common cathode
Text: DOMINANT Semiconductors Mp Innovating Illumination Si Hybrid, Revolutions e x t G e n e T tt ÉÉÉÜ m m sm m si Taking off with a myriad of colors Take a leap of faith in lighting technology, and before you land, you will discover" cmazzling array of scintillating colors right in your
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ZN 3055 transistor
Abstract: Transistor w1l 7805 TO-220 V7233 5241E V7331 V5237B V-5240-k mk 5373 V7622
Text: ASSMANN Technical Data & Abbreviations Electronic C om ponen ts Al Surface nature AI203 Aluminiumoxyd Al Mg Si 0,5 Special aluminium alloy {extruded Al 99,5 Special aluminium alloy band) GD-AI Si 12 Special aluminium alloy (Die-cast) BeO Berylliumoxyd K
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AI203
OT-32,
O-126)
O-220
O-220,
ZN 3055 transistor
Transistor w1l
7805 TO-220
V7233
5241E
V7331
V5237B
V-5240-k
mk 5373
V7622
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GEOY6028
Abstract: Q62702-P5160 SFH3410 SFH 3410
Text: NPN-Si-Fototransistor für den sichtbaren Spektralbereich im Smart-DIL-Geh. Si-NPN Phototransistor for the Visible Spectral Range in Smart-DIL Package SFH 3410 Wesentliche Merkmale Features • Speziell geeignet für Anwendungen im Bereich von 350 nm bis 970 nm
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4n60f
Abstract: SIF4N60 45V100 4n60fp SIF4N60FP 600VGS F4N60 4N60 D25A
Text: Shenzhen SI Semiconductors Co., LTD. Product Specification HANNEL POWER MOSFET NN-沟道功率 MOS 管//N-C N-CHANNEL ●特点：热阻低 开关速度快 F4N60 FP SI SIF 4N60FP RoHS 输入阻抗高 符合RoHS RoHS规范 ●FEATUR ES ES：•LOW THERMAL RESISTANCE ■HIGH INPUT RESISTANCE ■FAST SWITCHING
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SIF4N60FP
4N60FP
O-220FP
O-220FP
4n60f
SIF4N60
45V100
4n60fp
SIF4N60FP
600VGS
F4N60
4N60
D25A
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SIF4N60
Abstract: F4N60 600VGS
Text: Shenzhen SI Semiconductors Co., LTD. Product Specification F4N60 SI SIF HANNEL POWER M OSFET NN-沟道功率 MOS 管//N-C N-CHANNEL ●特点：热阻低 开关速度快 RoHS 输入阻抗高 符合RoHS RoHS规范 ●FEATUR ES ES：•LOW THERMAL RESISTANCE ■HIGH INPUT RESISTANCE ■FAST SWITCHING
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SIF4N60
O-220
O-220
SIF4N60
F4N60
600VGS
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SIF2N60
Abstract: F2N60
Text: Shenzhen SI Semiconductors Co., LTD. Product Specification F2N60 SI SIF /N-C HANNEL POWER MOSFET NN-沟道功率 MOS 管/N-C /N-CHANNEL ●特点：热阻低 开关速度快 输入阻抗高 RoHS 符合RoHS RoHS规范 ●FEATUR ES ES：•LOW THERMAL RESISTANCE ■HIGH INPUT RESISTANCE ■FAST SWITCHING
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SIF2N60
O-220
O-220
SIF2N60
F2N60
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