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    SI APD 400- 700 NM Search Results

    SI APD 400- 700 NM Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    NR8360JP-BC-AZ Renesas Electronics Corporation φ 30 μm InGaAs Avalanche Photo Diode 14-PIN DIP Module With TEC Visit Renesas Electronics Corporation
    NR8800FS-CB-AZ Renesas Electronics Corporation φ 80 μm InGaAs Avalanche Photo Diode Module for OTDR Applications Visit Renesas Electronics Corporation
    NR8300FP-CC-AZ Renesas Electronics Corporation 1000 to 1600 nm Optical Fiber Communications φ 30 µm InGaAs Avalanche Photo Diode Module Visit Renesas Electronics Corporation
    NR8800FS-CB-AZ/SH Renesas Electronics Corporation φ 80 μm InGaAs Avalanche Photo Diode Module for OTDR Applications Visit Renesas Electronics Corporation
    NR4211TH-AZ Renesas Electronics Corporation Receiver Limiting Tia, With Dca Function) Inalas Apd Receiver With Internal Pre-Amplifier For 10 Gb/S Applications Visit Renesas Electronics Corporation

    SI APD 400- 700 NM Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Si APD S12023シリーズなど 低バイアス動作タイプ800 nm帯用APD 800 nm帯の近赤外域用のSi APDで、200 V以下の低電圧で動作が可能です。空間光伝送・光波距離計などの用途に適して います。 特長 用途


    Original     		PDF S12023ã S12023-02 S12023-05 S12051 S12086 S12023-10 S12023-10A S3884 S2384 S2385

    Untitled

    Abstract: No abstract text available
    Text: Si APD S6045/S12060シリーズ 低温度係数タイプ800 nm帯用APD 800 nm帯の近赤外域用のSi APDです。動作電圧の温度係数が低く設計されており、広い温度範囲で安定した動作が可能です。 光波距離計・空間光伝送などの用途に適しています。


    Original     		PDF S6045/S12060ã S12060-02 S12060-05 S12060-10 S6045-04 S6045-05 S6045-06 KAPDA0012JC KAPDA0139JA S6045-01

    Si apd photodiode

    Abstract: parameter vk 45 Si apd photodiode 700 nm 2SC3138Y apd 400- 700 nm 2SC3138-Y S8328 420nm quadrant avalanche photodiode Photodiode apd high sensitivity
    Text: US Patent Pending APD Si APD S8328 Quadrant APD with high bluish-violet sensitivity S8328 is a quadrant APD Avalanche Photodiode having a gain of 2-100. The peak gain lies at 420 nm and creates a high sensitivity for blue to violet minor signals. An on-chip bias control circuit gives the most stable output from low to high temperature.


    Original     		PDF S8328 S8328 SE-171 KAPD1006E01 Si apd photodiode parameter vk 45 Si apd photodiode 700 nm 2SC3138Y apd 400- 700 nm 2SC3138-Y 420nm quadrant avalanche photodiode Photodiode apd high sensitivity

    Untitled

    Abstract: No abstract text available
    Text: Si APD S12023 series, etc. Low bias operation, for 800 nm band These are 800 nm band near-infrared Si APDs that can operate at low voltages, 200 V or less. They are suitable for applications such as FSO free space optics and optical rangefinders. Features


    Original     		PDF S12023 S12023-02 S12023-05 S12051 S12086 S12023-10 S12023-10A S3884 S2384 S2385

    Untitled

    Abstract: No abstract text available
    Text: Si APD S12023 series, etc. Low bias operation, for 800 nm band These are 800 nm band near-infrared Si APDs that can operate at low voltages, 200 V or less. They are suitable for applications such as FSO free space optics and optical rangefinders. Features


    Original     		PDF S12023 S12023-02 S12023-05 S12051 S12086 S12023-10 S12023-10A S3884 S2384 S2385

    Untitled

    Abstract: No abstract text available
    Text: Si APD S6045/S12060 series Low temperature coefficient type APD for 800 nm band The S6045 and S12060 series are near infrared Si APDs developed for use in the 800 nm wavelength band. These APDs are designed so that the temperature coefficient of the operating voltage is low enough to ensure stable operation over a wide


    Original     		PDF S6045/S12060 S6045 S12060 S12060-02 S12060-05 S12060-10 S6045-04 KAPD1005E06

    Untitled

    Abstract: No abstract text available
    Text: Si APD S6045/S12060 series Low temperature coefficient type APD for 800 nm band The S6045 and S12060 series are near infrared Si APDs developed for use in the 800 nm wavelength band. These APDs are designed so that the temperature coefficient of the operating voltage is low enough to ensure stable operation over a wide


    Original     		PDF S6045/S12060 S6045 S12060 S12060-02 S12060-05 S12060-10 S6045-04 KAPD1005E06

    Untitled

    Abstract: No abstract text available
    Text: Selection guide - March 2014 Si APD Avalanche Photodiode High-speed, high sensitivity photodiodes having an internal gain mechanism HAMAMATSU PHOTONICS K.K. S i A v a l a n c h e P h o t o d i o d e Si APD High-speed, high sensitivity photodiodes having an internal gain


    Original     		PDF D-82211 KAPD0001E05

    PerkinElmer Avalanche Photodiode

    Abstract: No abstract text available
    Text: Features and Benefits Introduction The short wavelength enhanced silicon avalanche photodiode APD by PerkinElmer (Model C30739ECERH) is designed for low light level applications covering the spectral range from less than 400 nm to greater than 700 nm. Benefits


    Original     		PDF C30739ECERH) DTS0108P PerkinElmer Avalanche Photodiode

    S12926

    Abstract: S12926-05
    Text: セレクションガイド 2015.1 Si APD アバランシェ・フォトダイオード 内 部 増 倍 機 能 を もった 高 速・高 感 度 の フォト ダ イ オ ード Si AVALANCHE PHOTODIODES S i P h o t o d i o d e Si APD (アバランシェ・フォトダイオード)


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: DATASHEET Photon Detection C30739ECERH Series Short Wavelength Enhanced Silicon Avalanche Photodiode Key Features The C30739ECERH large area silicon avalanche photodiode APD is intended for use in a wide variety of broadband low light level applications covering the spectral range from below 400 to over 700 nm.


    Original     		PDF C30739ECERH

    Untitled

    Abstract: No abstract text available
    Text: DATASHEET Photon Detection LLAM Series 900/1060/1550/1550E Si and InGaAs Low-Light Analog APD Receiver Modules LLAM Key Features E LLAM-1550E InGasAs APD Preamplifier Modules exhibit enhanced damage threshold and greater resilience when exposed to higher optical power densities.


    Original     		PDF 900/1060/1550/1550E LLAM-1550E 12-lead

    Untitled

    Abstract: No abstract text available
    Text: Si APD S8890シリーズ 近赤外域で高感度のAPD 特長 用途 高感度 YAGレーザの検出 長波長光の検出 高ゲイン 低端子間容量 構成／絶対最大定格 型名 S8890-02 S8890-05 S8890-10 S8890-15 S8890-30 外形寸法図/ 窓材*1


    Original     		PDF S8890ã S8890-02 S8890-05 S8890-10 S8890-15 S8890-30 KAPDB0066JB KAPDB0067JA S8890-02/-05/-10/-15

    apd array

    Abstract: No abstract text available
    Text: Si APD array S8550-02 4 x 8 element APD array with low noise and enhanced short-wavelength sensitivity The S8550-02 is an APD avalanche photodiode array designed for short wavelength detection, featuring low noise and low terminal capacitance. The S8550-02 also offers uniform gain and small crosstalk between each element.


    Original     		PDF S8550-02 S8550-02 SE-171 KAPD1031E01 apd array

    Untitled

    Abstract: No abstract text available
    Text: Si APD array S8550-02 4 x 8 element APD array with low noise and enhanced short-wavelength sensitivity The S8550-02 is an APD avalanche photodiode array designed for short wavelength detection, featuring low noise and low terminal capacitance. The S8550-02 also offers uniform gain and small crosstalk between each element.


    Original     		PDF S8550-02 S8550-02 KAPD1031E01

    Untitled

    Abstract: No abstract text available
    Text: PHOTODIODE Si APD S8664 series Short wavelength type APD Features Applications l Low-light-level measurement l Analytical equipment l High sensitivity at visible range l Low noise l High gain l Low capacitance • General ratings / Absolute maximum ratings


    Original     		PDF S8664 S8664-02K S8664-05K S8664-10K S8664-20K S8664-30K S8664-50K S8664-55 SE-171 KAPD1012E02

    Si apd photodiode 800 nm

    Abstract: S8664-30K S8664 S8664-02K S8664-05K S8664-10K S8664-20K S8664-50K S8664-55 l420
    Text: PHOTODIODE Si APD S8664 series Short wavelength type APD Features Applications l Low-light-level measurement l Analytical equipment l High sensitivity at visible range l Low noise l High gain l Low capacitance • General ratings / Absolute maximum ratings


    Original     		PDF S8664 S8664-02K S8664-05K S8664-10K S8664-20K S8664-30K S8664-50K S8664-55 SE-171 KAPD1012E02 Si apd photodiode 800 nm S8664-30K S8664-02K S8664-05K S8664-10K S8664-20K S8664-50K S8664-55 l420

    KAPDA0036EA

    Abstract: No abstract text available
    Text: PHOTODIODE Si APD S8664 series Short wavelength type APD Features Applications l Low-light-level measurement l Analytical equipment l High sensitivity at visible range l Low noise l High gain l Low capacitance • General ratings / Absolute maximum ratings


    Original     		PDF S8664 S8664-02K S8664-05K S8664-10K S8664-20K S8664-30K S8664-50K S8664-55 S8664-1010 SE-171 KAPDA0036EA

    Untitled

    Abstract: No abstract text available
    Text: PHOTODIODE Si APD S8664 series Short wavelength type APD Features Applications l Low-light-level measurement l Analytical equipment l High sensitivity at visible range l Low noise l High gain l Low capacitance • General ratings / Absolute maximum ratings


    Original     		PDF S8664 S8664-02K S8664-05K S8664-10K S8664-20K S8664-30K S8664-50K S8664-55 SE-171 KAPD1012E03

    S8664

    Abstract: S8664-02K S8664-05K S8664-10K S8664-20K S8664-30K S8664-50K S8664-55
    Text: PHOTODIODE Si APD S8664 series Short wavelength type APD Features Applications l Low-light-level measurement l Analytical equipment l High sensitivity at visible range l Low noise l High gain l Low capacitance • General ratings / Absolute maximum ratings


    Original     		PDF S8664 S8664-02K S8664-05K S8664-10K S8664-20K S8664-30K S8664-50K S8664-55 S8664-1010 SE-171 S8664-02K S8664-05K S8664-10K S8664-20K S8664-30K S8664-50K S8664-55

    Si apd photodiode 700 nm

    Abstract: S8664 S8664-02K S8664-05K S8664-10K S8664-20K S8664-30K S8664-50K S8664-55 420nm
    Text: PHOTODIODE Si APD S8664シリーズ 短波長タイプAPD 特長 用途 l 可視域で高感度低雑音 l 高ゲイン l 低容量 l 微弱光計測 l 分析用機器 • 一般定格／絶対最大定格 型名 外形寸法図 /窓材 *1 S8664-02K S8664-05K


    Original     		PDF S8664 S8664-02K S8664-05K S8664-10K S8664-20K S8664-30K S8664-50K S8664-55 S8664-1010 Si apd photodiode 700 nm S8664 S8664-02K S8664-05K S8664-10K S8664-20K S8664-30K S8664-50K S8664-55 420nm

    FND-100Q

    Abstract: FND-100 C30724E YAG-444-4A InGaAs APD quadrant PerkinElmer fnd-100q Si apd photodiode nir emitter leds with 700 to 900 nm SPCM-AQR C30950E
    Text: High-performance emitters & detectors for the most demanding applications PerkinElmer Optoelectronics PerkinElmer Optoelectronics provides Sensor, Lighting and Digital Imaging technologies to speed the development of breakthrough applications for customers in industrial, safety & security, consumer and biomedical markets.


    Original     		PDF CAT0506P FND-100Q FND-100 C30724E YAG-444-4A InGaAs APD quadrant PerkinElmer fnd-100q Si apd photodiode nir emitter leds with 700 to 900 nm SPCM-AQR C30950E

    Hamamatsu avalanche diode

    Abstract: ortec E678-12M pdf of 741 ic telephone hybrid R7110U-40 TPMH1239E03
    Text: COMPACT HYBRID PHOTO-DETECTOR PRELIMINARY DATA APR. 2000 with Si-Avalanche Diode Target R7110U-40 PATENT PENDING FEATURES APPLICATIONS High Q.E. from 450 to 650 nm Low Excess Noise High Gain Operable in High Magnetic Fields Low Hysteresis High Energy Physics


    Original     		PDF R7110U-40 E678-12M SE-171-41 TPMH1239E03 Hamamatsu avalanche diode ortec E678-12M pdf of 741 ic telephone hybrid R7110U-40 TPMH1239E03

    R7110U-40

    Abstract: pdf of 741 ic telephone hybrid TPMH1239E03 E678-12M
    Text: COMPACT HYBRID PHOTO-DETECTOR PRELIMINARY DATA SEPT. 2000 FEATURES with Si-Avalanche Diode Target R7110U-40 APPLICATIONS ● High Q.E. from 450 to 650 nm ● Low Excess Noise ● High Gain ● Operable in High Magnetic Fields ● Low Hysteresis ● High Energy Physics


    Original     		PDF R7110U-40 E678-12M SE-171-41 TPMH1239E03 R7110U-40 pdf of 741 ic telephone hybrid TPMH1239E03 E678-12M