Untitled
Abstract: No abstract text available
Text: Product Data Sheet Industrial SDHC Memory Card S-220 Series SPI, SDHC compliant class 6 & 10 compliant B U: Fl a sh Pr od u ct s Date : Marc h 25 , 2 0 13 Re vi si o n : 1 .3 0 Fi le : S - 2 20 _da ta_ s he e t_ SD - Lx B N_Re v1 2 0 .d oc S-220 Series SDHC Memory Card
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S-220
CH-9552
Rev130
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sandisk 32GB Nand flash
Abstract: No abstract text available
Text: Product Data Sheet Industrial SDHC Memory Card S-220 Series SPI, SDHC compliant, class 6 & 10 compliant B U: Fl a sh Pr od u ct s Date : Marc h 25 , 2 0 13 Re vi si o n : 1 .3 0 Fi le : S - 2 20 _da ta_ s he e t_ SD - Lx B N_Re v1 2 0 .d oc S-220 Series SDHC Memory Card
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S-220
CH-9552
Rev130
sandisk 32GB Nand flash
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ADC 8 channels, 10msps
Abstract: Sawtek filters
Text: Over sampling ADCs in Cellular Base Station Receivers a 5/18/98 - 1 Com. Fabrication Processes 24 Nominal Resolution bits 22 20 18 Efficiency (mW/MHz) 16 220 14 25 12 12 10 6 8 3 6 2 CMOS * ADC as block system chip * * Si Bipolar 4 100E+0 a 1E+3 10E+3 100E+3
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AD6640
AD6640:
65MSPS
AD6620:
ADC 8 channels, 10msps
Sawtek filters
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SANYO TFT
Abstract: sanyo tft screen
Text: TFT-LCD MODULE SPECIFICATION SHEET ALR250FGT 5.6cm 2.2inch 176 x RGB x 220 dot TE NT AT IV E *These specifications are tentative, and are subject to change without notice. This is a 2.2 inch transflective Low-Temperature p-Si TFT-LCD module that is suitable for cellular
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ALR250FGT
LC13005)
16bit
ALR250-020415
SANYO TFT
sanyo tft screen
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Untitled
Abstract: No abstract text available
Text: UNISONICTECHNOLOGIESCO., LTD MJE2955T PNP SILICON TRANSISTOR H I GH V OLT AGE T RAN SI ST OR ̈ DESCRI PT I ON 1 TO-220 The UTC MJE2955T is designed for general purpose of amplifier and switching applications. 1 TO-252 ̈ ORDERI N G I N FORM AT I ON Ordering Number
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MJE2955T
O-220
MJE2955T
O-252
MJE2955TL-TA3-T
MJE2955TG-TA3-T
MJE2955TL-TN3-R
MJE2955TG-TN3-R
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Untitled
Abstract: No abstract text available
Text: UNISONICTECHNOLOGIESCO., LTD BU407 NPN SILICON TRANSISTOR N PN EX PI T AX I AL PLAN AR T RAN SI ST OR ̈ DESCRI PT I ON The UTC BU407 is a NPN epitaxial planar transistor, designed for use in TV Horizontal output and switching applications. ̈ 1 TO-220 FEAT U RES
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BU407
BU407
O-220
BU407L
BU407G
BU407-x-TA3-T
BU407L-x-TA3-T
BU407G-x-TA3-T
QW-R203-020
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Surface Mount
Abstract: No abstract text available
Text: API_newlayouts_single:APIcatalog_newlayouts 8/26/10 10:25 AM Page 87 er w Po s or ct du In SERIES PDxxxR SMT Power Choke Core * Test Measurement Frequency Values < 10µH tested @ 7.96 MHz; Values ≥10uH tested @ 1.0 kHz Mechanical Configuration Units designed for Surface Mounting
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-102M
-152M
-182M
-222M
-272M
-332M
-392M
-472M
-562M
-682M
Surface Mount
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CE 472M
Abstract: nu 472M 224k
Text: er w Po s or ct du In SERIES PDxxxR SMT Power Choke Core * Test Measurement Frequency Values < 10µH tested @ 7.96 MHz; Values ≥10uH tested @ 1.0 kHz Mechanical Configuration Units designed for Surface Mounting Terminals Solder Coated Core Construction High Resistivity Ferrite
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buz73
Abstract: BUZ73A
Text: SIEMENS SIPMOS Power Transistors BUZ 73 BUZ 73 A • N channel • Enhancement mode • Avalanche-rated Type ^DS Id Tc ^DS on Package 1> Ordering Code BUZ 73 200 V 7.0 A 28 "C 0.4 Si TO-220 AB C67078-S1317-A2 BUZ 73 A 200 V 5.5 A 37 "C 0.6 Q TO-220 AB
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O-220
C67078-S1317-A2
C67078-S1317-A3
buz73
BUZ73A
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Untitled
Abstract: No abstract text available
Text: Si SGS-THOMSON AM0608-200 m RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS PRELIMINARY DATA REFRACTORY/GOLD METALLIZATION INTERNAL INPUT MATCHING METAL/CERAMIC HERMETIC PACKAGE P o u t = 220 W MIN. WITH 8.7 dB GAIN O - A The AM0608-200 is an internally-matched, com
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AM0608-200
AM0608-200
750MHz
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Untitled
Abstract: No abstract text available
Text: VP0645 VP0650 0FàSupertex inc. P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information R d S ON BVoes (max) -450V 30£! -500V 30£i Order Number / Package Si b v dss/ TO-39 TO-92 TO-220 DICE* -0.2A VP0645N2 VP0645N3 VP0645N5 VP0645ND -0.2A VP0650N2
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VP0645
VP0650
-450V
-500V
O-220
VP0645N2
VP0645N3
VP0645N5
VP0645ND
VP0650N2
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Untitled
Abstract: No abstract text available
Text: f Z 7 SCS-THOMSON ^7# MJE13006 MJE13007/A [» ^ iy iO T ® K S MOTOR CONTROL, SWITCH REGULATORS DESCRIPTION The MJE13006, MJE13007 and MJE13007A are si licon multiepitaxial mesa NPN transistors. They are mounted in Jedec TO-220 plastic package, inten
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MJE13006
MJE13007/A
MJE13006,
MJE13007
MJE13007A
O-220
JE13007A
2N5191,
JE13006-M
JE13007-M
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vp1204n2
Abstract: No abstract text available
Text: SUPERTEX blE D I NC • Ô7732TS QQG3257 flfll « S T X ^ Super te x inc. VP12A P-Channel Enhancement-Mode Vertical DMOS FETs Ordering information Standard Commercial Devices / BVdos R d S ON (max) Order Number / Package SI B Vdss TO-39 TO-220 DICE* -40V
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7732TS
QQG3257
VP12A
VP1204N2
VP1206N2
VP1210N2
O-220
VP1204N5
VP1206N5
VP1210N5
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transistor Buz 11
Abstract: buz11
Text: SIEMENS BUZ 11 Not for new design SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type BUZ 11 Vbs 50 V h 30 A ^%>S{on 0.04 Si Package Ordering Code TO-220 AB C67078-S1301-A2 Maximum Ratings Parameter Symbol Continuous drain current
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O-220
C67078-S1301-A2
transistor Buz 11
buz11
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BD243
Abstract: No abstract text available
Text: r z 7 SGS-THOMSON ^7# BD243/A/B/C BD244/A/B/C POWER LINEAR AND SWITCHING APPLICATIONS DESCRIPTION The BD243, BD243A, BD243B and BD243C are si licon epitaxial-base NPN power transistors in Jedec TO-220 plastic package, intended for use in medium power linear and switching applications.
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BD243/A/B/C
BD244/A/B/C
BD243,
BD243A,
BD243B
BD243C
O-220
BD244,
BD244A,
BD244B
BD243
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Untitled
Abstract: No abstract text available
Text: FI 73232J7 D D gqiO q g • ^ 3 SGS-THOMSON «[B miOT KS 3 - MJE13006 MJE13007/A S G S-THOMSON 3GE D MOTOR CONTROL, SWITCH REGULATORS DESC RIPTIO N The MJE13006, MJE13007 and MJE13007Aare si licon multiepitaxial mesa NPN transistors. They are mounted in Jedec TO-220 plastic package, inten
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73232J7
MJE13006
MJE13007/A
MJE13006,
MJE13007
MJE13007Aare
O-220
MJE13007A
MJE13006
7T2T237
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T1P32
Abstract: bd241 42bb
Text: f Z 7 SGS-THOMSON BD241/A/B/C BD242/A/B/C ^7# MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS D E S C R IP T IO N The BD241, BD241 A, BD241B and BD241C are si licon epitaxial-base NPN power transistors in Jedec TCi-220 plastic package, intended for use in medium
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BD241/A/B/C
BD242/A/B/C
BD241,
BD241
BD241B
BD241C
TCi-220
BD242,
BD242A,
BD242B
T1P32
42bb
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C67078-A1315-A2
Abstract: No abstract text available
Text: SIEMENS SI PM OS Power MOS Transistors ’ D SC on • • • • BUZ 76 BUZ 76 A = 400 V = 3 .0 / 2.7 A = 1 .8 /2 .5 Q N channel Enhancement mode Avalanche-proof Package: TO-220 A B 1) Type Ordering code BUZ 76 C67078-A1315-A2 BUZ 76 A C67078-A1315-A3 Maximum Ratings
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O-220
C67078-A1315-A2
C67078-A1315-A3
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buz11
Abstract: 11S2 BUZ p channel buz 11 a Buz 11 BUZ11A
Text: SIEMENS BUZ 11 BUZ 11 A, BUZ 11 S2 SI PMOS Power Transistors • N channel • Enhancement mode • Avalanche-rated O VPT05381 Type VDS Id Tc Ordering Code 50 V 30 A 29 "C ^DS on 0.040 Q. Package 1> BUZ 11 TO-220 AB C67078-S1301-A2 BUZ 11 A 50 V 26 A 25 "C
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VPT05381
O-220
C67078-S1301-A2
C67078-S1301
C67078-S1301-A5
buz11
11S2
BUZ p channel
buz 11 a
Buz 11
BUZ11A
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SC22-3
Abstract: 2sc2238
Text: TO-220 < o >r * a I V S si PIN CONFIGURATION:— 1. BASE 2. COLLECTOR 3. EMITTER M_ MIN 14.42 9.63 3,56 DIM A B C D E F G h J K L M N MAX 16.51 10.67 4.83 0.90 1,40 1.15 3.75 3.85 2,29 2,79 2,54 3.43 0,56 12,70 14.73 6,35 2,03 2,92 31.24 7 1/2 DEG — - -
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O-220
O-220
2SC1398R
2SC2073
2SC2233
2SC2238
2SC2238Y
2SC2335
SC22-3
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d239ab
Abstract: CS696 bd240c D239 D239B d240a D239 PNP
Text: rZ Z SG S -TH O M SO N B D239/A /B /C B D 240/A /B /C ^7# MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS D E S C R IP T IO N The BD239, BD239A, BD239B and BD239C are si licon epitaxial-base NPN power transistors in Jedec TO-220 plastic package, intended for use in medium
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D239/A
240/A
BD239,
BD239A,
BD239B
BD239C
O-220
BD240,
BD240A,
BD240B
d239ab
CS696
bd240c
D239
D239B
d240a
D239 PNP
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2SC 2229 transistor
Abstract: ic a 2231 npn 10a 800v Q68000-A3869 BUX84 BUX85 Q68000-A5166 siemens bsc E12 Siemens ce2231
Text: 25C D • 02 3 S b 0 5 ISIEG ÜOQMfib? BUX84 BUX85 NPN Silicon Power Transistors SI E M E N S A K T I E N G E S E L L S C H A F BUX 84 and BUX 85 are triple diffused NPN silicon power transistors in TO 220 cases. They are outstanding for their short switching times and high dielectric strength, and are
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023SbOS
BUX84
BUX85
Q68000-A3869
Q68000-A5166
rMMS50Â
BUX84
a235t
2SC 2229 transistor
ic a 2231
npn 10a 800v
Q68000-A3869
BUX85
Q68000-A5166
siemens bsc
E12 Siemens
ce2231
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B0138
Abstract: No abstract text available
Text: 28L0138-70R-10 ELECTRICAL CHARACTERISTICS: Z DCR Si @ R ated C urren t 2 5 MHz 1 0 0 M H z ( n ) 123 220 M in im u m - 165 M a x im u m - 275 N o m in a l P H Y S IC A L DIMENSIONS: A 3.51 [.1 3 8 ] ± 0 .2 5 B 5 9 .0 0 [2 .3 2 ] ± 1 .5 7 [ . 0 6 2 ] C 1 3 .9 7
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28L0138-70R-10
28L013
3961A
6192A
B0138
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anzac 112
Abstract: SW-367 TO53 SW-111 SW-121 SW-161 SW-211 SW-213 SW-341 SW-342
Text: tl/A-COM INC/ ANZAC HIV 51E 1> • 5M5177 ODDSS^ ant - ANZ ANZAC RF& CELLULAR COMPONENTS RF Control Devices SPST Switches INSERTION LOSS dB TYP FREQUENCY RANGE (MHz) St/GaAs SW-121 SW-161 SW-211 SW-213 SW-341 SW-342 SW-344 SW-367 SW-111 SW-131 SW-209 SW-209B
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SW-121
SW-161
SW-211
DC-2000
SW-213
SW-341
SW-342
anzac 112
SW-367
TO53
SW-111
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