SI1050A
Abstract: sanken S-100W 12v 25w power amplifier sanken SI-1050s2 SI3554M SI-3552m SI-3580M SI-3052A sanken S-60W SI 1125H
Text: SANKEN ELECTRIC U S A H E D I 7^0741 ODDODDfl 7- - V 3 - o / • Quick Guide to Discontinued Parts 50W Hybrid Audio Power Amplifier SI-1050E SI-1050S 50W Hybrid Power Amp. for industrial use // // SI-1050S-2 Remarks SI-3500M SI-3121S 9~25V 12V 1.5A Voltage Regulator
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SI-1050A
SI-1050E
SI-1050S
SI-1050S-2
SI-1020A
SI-1020E
SI-1020GL
SI-1030QL
SI-1050GL
SI-1050GS
SI1050A
sanken S-100W
12v 25w power amplifier
sanken SI-1050s2
SI3554M
SI-3552m
SI-3580M
SI-3052A
sanken S-60W
SI 1125H
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Untitled
Abstract: No abstract text available
Text: SANKEN ELECTRIC CO., LTD. SI-6633M Scope The present specifications shall apply to a 3 phase brushless motor driver IC, SI-6633M. The present specifications shall apply to SI-6633M which is performed RoHS instructions. Outline Type Monolithic integrated circuit
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SI-6633M
SI-6633M.
SI-6633M
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Untitled
Abstract: No abstract text available
Text: SANKEN ELECTRIC CO., LTD. SI-6633M Scope The present specifications shall apply to a 3 phase brushless motor driver IC, SI-6633M. The present specifications shall apply to SI-6633M which is performed RoHS instructions. Outline Type Monolithic integrated circuit
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SI-6633M
SI-6633M.
SI-6633M
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1NA101
Abstract: S8890 APD S11519
Text: IR-enhanced Si APD S11519 series Enhanced near IR sensitivity, using a MEMS technology HAMAMATSU has developed various types of Si detectors that offer enhanced near-infrared sensitivity due to a MEMS structure formed on the back side of the photodiode. The S11519 series are a family of Si APDs with improved sensitivity in the near infrared region.
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S11519
S8890
SE-171
KAPD1028E01
1NA101
APD S11519
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Untitled
Abstract: No abstract text available
Text: IR-enhanced Si APD S11519 series Enhanced near IR sensitivity, using a MEMS technology HAMAMATSU has developed various types of Si detectors that offer enhanced near-infrared sensitivity due to a MEMS structure formed on the back side of the photodiode. The S11519 series are a family of Si APDs with improved sensitivity in the near infrared region.
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S11519
S8890
SE-171
KAPD1028E01
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Untitled
Abstract: No abstract text available
Text: 4 W a t t Sin e W a ve Telephone Ring Generator 4 REN @8 6 Vr m s t o 1 2 REN @4 5 Vr m s PCR- SI N 0 6 Se r ie s !" PCR- SI N 0 6 V1 2 F0 0 !" PCR- SI N 0 6 V2 4 F0 0 !" PCR- SI N 0 6 V4 8 F0 0 !" PCR- SI N 0 6 V1 2 F0 0 - L 9 PCR-SIN06 Series 4REN@86Vrms to 12REN@45Vrms SINE WAVE TELEPHONE RING GENERATOR
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PCR-SIN06
86Vrms
12REN
45Vrms
PCR-SIN06
45-86Vrms
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DF19G-20S-1C
Abstract: DF19G-20S-1F DF19L-20P-1H
Text: Displays PRELIMINARY ANDpSi121GAOS-HB 12.1” XGA Color p-Si TFT LCD Module The ANDpS121GAOS-HB is 1024 x 768 Color TFT display that utilizes new poly-silicon p-Si technology to provide a brighter, thinner and lighter display with high-resolution. The p-Si TFT
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ANDpSi121GAOS-HB
ANDpS121GAOS-HB
DF19G-20S-1C
DF19G-20S-1F
DF19L-20P-1H
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Untitled
Abstract: No abstract text available
Text: Displays PRELIMINARY ANDpSi121GAOS-HB 12.1” XGA Color p-Si TFT LCD Module The ANDpS121GAOS-HB is 1024 x 768 Color TFT display that utilizes new poly-silicon p-Si technology to provide a brighter, thinner and lighter display with high-resolution. The p-Si TFT
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ANDpSi121GAOS-HB
ANDpS121GAOS-HB
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ANDpSi08C351-HB
Abstract: DF19G-30S-1C
Text: Displays ANDpSi08C351-HB-KIT 8.4” SVGA Color p-Si TFT LCD Module The ANDpSi08C351-HB-KIT is 800 x 600 Color TFT display that utilizes new poly-silicon p-Si technology to provide a brighter, thinner and lighter display with high-resolution. The p-Si TFT
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ANDpSi08C351-HB-KIT
ANDpSi08C351-HB-KIT
ANDpSi08C351-HB
DF19G-30S-1C
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Untitled
Abstract: No abstract text available
Text: SANKEN ELECTRIC CO., LTD. SI-6635M Scope The present specifications shall apply to a 3 phase brushless motor driver IC, SI-6635M. The present specifications shall apply to SI-6635M which is performed RoHS instructions. The present specifications, which shows in Japanese and English, shall be prior to Japanese.
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SI-6635M
SI-6635M.
SI-6635M
500msec/Dutyr
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Untitled
Abstract: No abstract text available
Text: S2A.S2M Si-Gleichriehter für die Oberflächenmontage Surface Mount Si-Rectifier 1.5 A Nominal current Nennstrom Repetitive peak reverse voltage Periodische Spitzensperrspannung 50. 1000 V Plastic case Kunststoffgehäuse 'DO -214A A 0.1 Weight approx.
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-214A
UL94V-0
R0D1RS14
DGG174
000017S
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logic ic 7476 pin diagram
Abstract: H13003 datasheet and pin diagram of IC 7476 pin diagram for IC 7476 h13001 6H23 IDX110 R019h 7476 PIN DIAGRAM v63n
Text: Preliminary HD66781 720-channel Source Driver for a-Si TFT/Low Temperature Poly-Si TFT Panels with 262,144-color display RAM REJxxxxxxx-xxxxZ Rev.0.5 July.31.2003 • Index Description . 6
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HD66781
720-channel
144-color
HD66781
logic ic 7476 pin diagram
H13003
datasheet and pin diagram of IC 7476
pin diagram for IC 7476
h13001
6H23
IDX110
R019h
7476 PIN DIAGRAM
v63n
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dsas
Abstract: DSAS13U
Text: A S E A BROW N/ ABB SEMICON A3 D | 0040300 0000250 ñ | 1 - ;- '- T - U - 2 3 Si-Uberspannungsbegrenzer Typ Type Irm für Basisbreite for base width longeur de base A V drm 1 Vrrm VAO Si-Surge voltage suppressors
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Untitled
Abstract: No abstract text available
Text: F R 2 A .F R 2 M Fast Switching Surface Mount Si-Rectifier Schnelle Si-Gleichrichter für die Oberflächenmontage Nominal current Nennstrom 1.5 A Repetitive peak reverse voltage Periodische Spitzensperrspannung 50. 1000 V Plastic case Kunststoffgehäuse
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DO-214
UL94V-0
G0174
000017S
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Untitled
Abstract: No abstract text available
Text: Displays ANDpSi08C351-HB 8.4” SVGA Color p-Si TFT LCD Module The ANDpSi08C351-HB is 800 x 600 Color TFT display that utilizes new poly-silicon p-Si technology to provide a brighter, thinner and lighter display with high-resolution. The p-Si TFT technology allows the row and column LCD drivers to be
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ANDpSi08C351-HB
ANDpSi08C351-HB
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DF19G-30P-1H
Abstract: No abstract text available
Text: ANDpSiTFT08C351-HB 8.4” SVGA Color p-Si TFT LCD Module The ANDpSiTFT08C351-HB is 800 x 600 Color TFT display that utilizes new poly-silicon p-Si technology to provide a brighter, thinner and lighter display with high-resolution. The p-Si TFT technology allows the row and column LCD drivers to be
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ANDpSiTFT08C351-HB
ANDpSiTFT08C351-HB
DF19G-30P-1H
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Untitled
Abstract: No abstract text available
Text: Displays ANDpSi08C351-HB 8.4” SVGA Color p-Si TFT LCD Module The ANDpSi08C351-HB is 800 x 600 Color TFT display that utilizes new poly-silicon p-Si technology to provide a brighter, thinner and lighter display with high-resolution. The p-Si TFT technology allows the row and column LCD drivers to be
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ANDpSi08C351-HB
ANDpSi08C351-HB
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BHR-04VS-1
Abstract: DF19G-30S-1C
Text: Displays ANDpSi08C351-HB 8.4” SVGA Color p-Si TFT LCD Module The ANDpSi08C351-HB is 800 x 600 Color TFT display that utilizes new poly-silicon p-Si technology to provide a brighter, thinner and lighter display with high-resolution. The p-Si TFT technology allows the row and column LCD drivers to be
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ANDpSi08C351-HB
ANDpSi08C351-HB
BHR-04VS-1
DF19G-30S-1C
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ANDpSi08C351-HB
Abstract: DF19G-30S-1C
Text: Displays ANDpSi08C351-HB 8.4” SVGA Color p-Si TFT LCD Module The ANDpSi08C351-HB is 800 x 600 Color TFT display that utilizes new poly-silicon p-Si technology to provide a brighter, thinner and lighter display with high-resolution. The p-Si TFT technology allows the row and column LCD drivers to be
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ANDpSi08C351-HB
ANDpSi08C351-HB
DF19G-30S-1C
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Untitled
Abstract: No abstract text available
Text: PHOTODIODE Si photodiode S2551 For visible to infrared precision photometry S2551 is a Si photodiode having a long active area of 1.2 x 29.1 mm, designed for visible to infrared precision photometry. Features Applications l Long, narrow active area: 1.2 × 29.1 mm
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S2551
S2551
SE-171
KSPD1027E02
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vr3v3
Abstract: No abstract text available
Text: PHOTODIODE Si PIN photodiode S8359, S8701 High-speed photodiode with lens S8359 and S8701 are Si PIN photodiodes molded into a clear plastic package with a φ1.7 mm lens. Features Applications l Laser diode monitor high-speed APC in laser disk equipment
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S8359,
S8701
S8359
S8701
S8359:
S8701:
SE-171
KPIN1063E02
vr3v3
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S2551
Abstract: SE-171
Text: PHOTODIODE Si photodiode S2551 For visible to infrared precision photometry S2551 is a Si photodiode having a long active area of 1.2 x 29.1 mm, designed for visible to infrared precision photometry. Features Applications l Long, narrow active area: 1.2 × 29.1 mm
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S2551
S2551
SE-171
KSPD1027E01
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Untitled
Abstract: No abstract text available
Text: PD - 91860D RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-2 IRHNA57160 100V, N-CHANNEL R5 TECHNOLOGY Product Summary Part Number Radiation Level IRHNA57160 100K Rads (Si) IRHNA53160 300K Rads (Si) RDS(on) 0.012Ω 0.012Ω ID 75*A 75*A IRHNA54160
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91860D
IRHNA57160
IRHNA53160
IRHNA54160
IRHNA58160
1000K
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Untitled
Abstract: No abstract text available
Text: AND08C351-HB 8.4” SVGA Color p-Si TFT LCD Module The AND08C351-HB is 800 x 600 Color TFT display that utilizes new poly-silicon p-Si technology to provide a brighter, thinner and lighter display with high-resolution. The p-Si TFT technology allows the row and column LCD drivers to be fabricated directly
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AND08C351-HB
AND08C351-HB
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