SHARP LH53 1M Search Results

Contextual Info: LH531000B-S CMOS 1M 128K x 8 3 V-Drive Mask-Programmable ROM FEATURES DESCRIPTION • 131,072 words x 8 bit organization The LH531000B-S is a mask-programmable ROM organized as 131,072 x 8 bits. It is fabricated using silicon-gate CMOS process technology.

Contextual Info: LH531000B-S CMOS 1M 128K x 8 3 V-Drive MROM FEATURES DESCRIPTION • 131,072 words x 8 bit organization The LH531000B-S is a mask-programmable ROM organized as 131,072 x 8 bits. It is fabricated using silicon-gate CMOS process technology. • Access time: 500 ns (MAX.)

sharp mask rom

Abstract: LH530900 sharp lh53 1M
Contextual Info: CMOS 1M 128K x 8 Mask Programmable ROM FEATURES DESCRIPTION • 131,072 x 8 bit organization The LH530900A is a mask programmable ROM organized as 131,072 x 8 bits (1,048,576 bits). It is fab­ ricated using silicon-gate CMOS process technology. • Access time: 150 ns (MAX.)

lh53

Contextual Info: CM O S 1M 128K x 8 Mask-Programmable ROM FEATURES PIN CONNECTIONS • 131,072 • Access time: 150 ns (MAX.) • Power consumption: Operating: 193 mW (MAX.) Standby: 550 \i\N (MAX.) • Fully-static operation • TTL compatible I/O • Three-state outputs

LH53820

Abstract: LH538200 lh538200d20 LH538 lh5382
Contextual Info: CMOS 8M 1M FEATURES • 1,048,576 x 8 bit organization • Access time: 200 ns (MAX. • Power consumption: Operating: 275 mW (MAX.) x 8) Mask Program mable ROM DESCRIPTION The LH538200 is a mask programmable ROM organized as 1,048,576 x 8 bits. It is fabricated using

Contextual Info: L H 5 3 1 B - S CMOS 1M 128K x 8 3 V-Drive MROM FEATURES DESCRIPTION • 131,072 words x 8 bit organization The LH531000B-S is a mask-programmable ROM organized as 131,072 x 8 bits. It is fabricated using silicon-gate CMOS process technology. • Power consumption:

LH53

Abstract: LH538100
Contextual Info: CMOS 8M 1M x 8 Mask-Programmable ROM FEATURES DESCRIPTION • 1 ,048,576 x 8 bit organization The LH538100 is a mask-programmable ROM organized as 1,048,576 x 8 bits. It is fabricated using silicon-gate CMOS process technology. • Access time: 200 ns (MAX.)

Contextual Info: L H 5 3 1 B - S CMOS 1M 128K x 8 3 V-Prive MROM FEATURES DESCRIPTION • 131,072 words x 8 bit organization The LH531000B-S is a mask-programmable ROM organized as 131,072 x 8 bits. It is fabricated using silicon-gate CMOS process technology. • Access time: 500 ns (MAX.)

LH538100

Abstract: sharp mask rom sharp lh53 sharp lh53 1M
Contextual Info: CMOS 8M 1M x 8 Mask Programmable ROM FEATURES • 1,048,576 x 8 bit organization • Access time: 200 ns (MAX.) • Power consumption: Operating: 275 mW (MAX.) DESCRIPTION The LH538100 is a mask programmable ROM organized as 1,048,576 x 8 bits. It is fabricated using

sharp mask rom 44-pin

Abstract: sharp lh53 D72120
Contextual Info: C M O S 1M 128K x 8 Mask-Programmable ROM FEATURES PIN CONNECTIONS • 131,072 x 8 bit organization • Access time: 150 ns (MAX.) 32-PIN DIP • Power consumption: Operating: 193 mW (MAX.) Standby: 550 jiW (MAX.) • Fully-static operation • TTL compatible I/O

431 capacitor NCC

Contextual Info: LH531000B CMOS 1M 128K x 8 Mask-Programmable ROM FEATURES DESCRIPTION • 1 31,072 x 8 bit organization The LH531000B is a mask-programmable ROM organized as 131,072 x 8 bits. It is fabricated using silicon-gate CMOS process technology. • Access time: 150 ns (M AX.)

sharp mask rom 44-pin

Abstract: 1417D lh53
Contextual Info: CMOS 1M 128K x 8 Mask-Programmable ROM FEATURES DESCRIPTION • 131,072 x 8 bit organization The LH531000B is a mask-programmable ROM organized as 131,072 x 8 bits. It is fabricated using silicon-gate C M O S process technology. • Access time: 150 ns (MAX.)

LH5316000

Abstract: lh53 64pin
Contextual Info: CMOS 16M 2M x 8 / 1M x 16 Mask-Programmable ROM LH 5316000 FEATURES • 2,097,152 x 8 bit organization (Byte mode) 1,048,576 x 16 bit organization (Word mode) • BYTE input pin selects bit configuration • Access time: 200 ns (MAX.) DESCRIPTION The LH5316000 is a mask-programmable ROM

a5c capacitor

Abstract: sharp mask rom LH5316000 64 pin CMOS MASK ROM
Contextual Info: LH5316000/ FEATURES • 2,097,152 x 8 bit organization Byte mode 1,048,576 x 16 bit organization (Word mode) • BYTE input pin selects bit configuration • Access time: 200 ns (MAX.) • Power consumption: CMOS 16M (2M x 8 / 1M x 16) Mask Programmable ROM

sharp lh53

Abstract: sharp lh53 1M
Contextual Info: CMOS 1M 128K x 8 Mask-Programmable ROM DESCRIPTION FEATURES • 131,072 x 8 bit organization • Access time: 150 ns (M AX.) • Low power consumption: The LH531000B is a mask-programmable ROM organized as 131,072 x 8 bits. It is fabricated using silicon-gate CMOS process technology.

DIP-32P

Contextual Info: CMOS 1M 128K x 8 Mask-Programmable ROM FEATURES • 131,072 x 8 bit organization • Access time: 150 ns (MAX.) • Power consumption: Operating: 193 mW (MAX.) Standby: 550 (MAX.) PIN CONNECTIONS / • Fully static operation • TTL compatible I/O • •

Contextual Info: CMOS 4M 512K x 8 Mask Programmable ROM FEATURES • 524,288 x 8 bit organization • Access time: 150 ns (MAX.) • Power consumption: DESCRIPTION The LH534400A is a mask programmable ROM organized as 524,288 x 8 bits. It is fabricated using silicon-gate CMOS process technology.

lhmn5

Abstract: 2600T LH5332600T LH53 DA-14-L
Contextual Info: I LH53 3 2 6 00 T C O N T E N T 1 S 1 J. General Description P. 2 2. Features P. 2 3. Block Diagram P. 3 4. Pin Connections P. 4 5. Pin Description P. 4 6. Absolute Maximum Ratings P. 5 n t. Operating Ranges P. 5 8. D.C. Electrical Characteristics P. 5 9. A. C. Electrical Characteristics

d1545

Contextual Info: PRELIMINARY LH538600 FEATURES • 1,048,576 x 8 bit organization Byte mode 524 ,2 8 8 x 16 bit organization (Word mode) • BYTE input pin selects bit configuration • Access time: 100 ns (M AX.) • Power consumption: Operating: 3 8 5 mW (M AX.) Standby: 55 0 jiW (M AX.)